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    • 6. 发明授权
    • Methods for depositing metal in high aspect ratio features
    • 在高宽比特征中沉积金属的方法
    • US08563428B2
    • 2013-10-22
    • US13223788
    • 2011-09-01
    • Karl BrownAlan RitchieJohn PipitoneYing RuiDaniel J. Hoffman
    • Karl BrownAlan RitchieJohn PipitoneYing RuiDaniel J. Hoffman
    • H01L21/44
    • C23C14/046C23C14/185C23C14/3492
    • Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
    • 本文提供了以高纵横比特征沉积金属的方法。 在一些实施例中,处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体,使用等离子体溅射来自靶的金属原子 同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分,将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上,施加第一RF功率以在 至少一些沉积的金属原子从开口的底表面和上表面到侧壁,并且重新沉积重新分布过程,直到第一金属层沉积在开口的基本上所有的表面上。