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1. 发明授权

US08563428B2 Methods for depositing metal in high aspect ratio features 有权
标题翻译：在高宽比特征中沉积金属的方法
公开(公告)号：US08563428B2
公开(公告)日：2013-10-22
申请号：US13223788
申请日：2011-09-01
申请人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
发明人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

2. 发明申请

US20100314244A1 Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition 审中-公开
公开(公告)号：US20100314244A1
公开(公告)日：2010-12-16
申请号：US12560798
申请日：2009-09-16
申请人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
发明人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
IPC分类号： C23C14/46
CPC分类号： C23C14/354 , C23C14/3471 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

3. 发明申请

US20100314245A1 Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition 审中-公开
标题翻译：用于微结构控制薄膜沉积的电离物理气相沉积
公开(公告)号：US20100314245A1
公开(公告)日：2010-12-16
申请号：US12483779
申请日：2009-06-12
申请人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
发明人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/185 , H01L31/022425 , H01L31/028 , H01L31/03762 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.
摘要翻译：描述了在包括靶，衬底和工艺气体的PVD室中处理衬底的方法，其压力足以引起从靶溅射出的大部分物质的电离。通过对目标施加非常高频的功率来维持电容耦合的高密度等离子体。溅射的材料在等离子体中电离并通过施加到衬底的高频偏置功率朝向衬底加速。通过修改压力和高频偏压功率中的一个或多个来控制所得膜的微观结构。

4. 发明申请

US20120028461A1 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：US20120028461A1
公开(公告)日：2012-02-02
申请号：US13178870
申请日：2011-07-08
申请人： Alan Ritchie , Karl Brown , John Pipitone
发明人： Alan Ritchie , Karl Brown , John Pipitone
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/34 , C23C14/345 , C23C14/3492 , C23C14/354 , C23C16/503 , C23C16/52 , C23C16/56 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76865 , H01L21/76873
摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.
摘要翻译：本文提供了在基板上形成的高纵横比特征中沉积金属的方法。在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些，以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

5. 发明授权

US08846451B2 Methods for depositing metal in high aspect ratio features 有权
标题翻译：在高宽比特征中沉积金属的方法
公开(公告)号：US08846451B2
公开(公告)日：2014-09-30
申请号：US13178870
申请日：2011-07-08
申请人： Alan Ritchie , Karl Brown , John Pipitone
发明人： Alan Ritchie , Karl Brown , John Pipitone
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/285 , H01J37/34 , H01L21/768 , C23C14/34 , C23C14/04 , C23C14/35 , C23C16/503 , C23C16/52 , C23C16/56
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/34 , C23C14/345 , C23C14/3492 , C23C14/354 , C23C16/503 , C23C16/52 , C23C16/56 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76865 , H01L21/76873
摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.
摘要翻译：本文提供了在基板上形成的高纵横比特征中沉积金属的方法。在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些，以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

6. 发明申请

US20060169578A1 Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas 有权
标题翻译：用于等离子体增强的物理气相沉积的装置，其具有通过工件以较轻铜载体施加的RF源功率
公开(公告)号：US20060169578A1
公开(公告)日：2006-08-03
申请号：US11140513
申请日：2005-05-25
申请人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
发明人： Karl Brown , John Pipitone , Vineet Mehta , Ralf Hofmann
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
摘要翻译：在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近，所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向晶片支撑座的表面。

7. 发明申请

US20060073690A1 Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于通过工件施加的源极和偏置功率频率的金属等离子体气相沉积和再溅射的装置和方法
公开(公告)号：US20060073690A1
公开(公告)日：2006-04-06
申请号：US11052012
申请日：2005-02-03
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , C23C14/345 , C23C14/354 , H01J37/32706 , H01J37/3408 , H01L21/76843 , H01L21/76844 , H01L21/76865
摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要翻译：在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。将工艺气体引入所述真空室。目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

8. 发明申请

US20080276958A1 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS 有权
标题翻译：基板清洗室和清洁和调节方法
公开(公告)号：US20080276958A1
公开(公告)日：2008-11-13
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

9. 发明授权

US08435379B2 Substrate cleaning chamber and cleaning and conditioning methods 有权
标题翻译：基材清洗室和清洁和调理方法
公开(公告)号：US08435379B2
公开(公告)日：2013-05-07
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： H01L21/306
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

10. 发明申请

US20060172517A1 Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
标题翻译：用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率
公开(公告)号：US20060172517A1
公开(公告)日：2006-08-03
申请号：US11222230
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/20
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.
摘要翻译：在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

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