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1. 发明授权

US09685186B2 HDD pattern implant system 有权
公开(公告)号：US09685186B2
公开(公告)日：2017-06-20
申请号：US12703897
申请日：2010-02-11
申请人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
发明人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
IPC分类号： G11B5/85 , C23C16/00 , G11B5/82 , C23F1/00 , H01L21/673 , G11B5/84 , H01L21/677 , G11B5/855 , C23C14/48 , H01L21/687 , C23C14/50
CPC分类号： G11B5/82 , C23C14/48 , C23C14/50 , C23C16/00 , C23F1/00 , G11B5/84 , G11B5/855 , H01L21/673 , H01L21/677 , H01L21/687
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

2. 发明授权

US09435029B2 Wafer chucking system for advanced plasma ion energy processing systems 有权
标题翻译：用于先进等离子体离子能量处理系统的晶片夹紧系统
公开(公告)号：US09435029B2
公开(公告)日：2016-09-06
申请号：US13193299
申请日：2011-07-28
申请人： Victor Brouk , Daniel J. Hoffman
发明人： Victor Brouk , Daniel J. Hoffman
IPC分类号： H01J37/32 , C23C16/50 , C23C14/34
CPC分类号： C23C16/50 , C23C14/345 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能并将衬底夹持到衬底支撑件的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

3. 发明申请

US20140062303A1 SYSTEMS AND METHODS FOR CALIBRATING A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM 有权
标题翻译：用于校准切换模式离子能量分配系统的系统和方法
公开(公告)号：US20140062303A1
公开(公告)日：2014-03-06
申请号：US13597032
申请日：2012-08-28
申请人： Daniel J. Hoffman , Daniel Carter , Victor Brouk , William J. Hattel
发明人： Daniel J. Hoffman , Daniel Carter , Victor Brouk , William J. Hattel
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , C23C14/345 , H01J37/32082 , H01J37/32422 , H01J37/32706 , H01J37/32926 , H01J37/32935 , H01J37/3299 , H05H1/0081
摘要： Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.
摘要翻译：公开了用于调节离子能量和离子能量分布以及校准偏压源和等离子体处理室的系统，方法和装置。一种示例性方法包括将周期性电压函数应用于负载仿真器，负载仿真器模拟等离子体负载的电特性和相关联的电子设备例如电动卡盘。可以测量负载仿真器的各种电气参数，并与偏置源产生的预期参数进行比较。测量值和预期值之间的差异可用于识别和纠正偏置电源，腔室或用于点燃和维持等离子体的电源的故障和异常。一旦偏置电源被校准，可以通过测量和计算包括衬底支撑件和任选的衬底的串联和并联电容的有效电容来校准腔室。

4. 发明授权

US08563428B2 Methods for depositing metal in high aspect ratio features 有权
标题翻译：在高宽比特征中沉积金属的方法
公开(公告)号：US08563428B2
公开(公告)日：2013-10-22
申请号：US13223788
申请日：2011-09-01
申请人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
发明人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

5. 发明申请

US20120217221A1 SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION OF A PROJECTED PLASMA 有权
标题翻译：用于控制投影等离子体的能量分配的系统，方法和装置
公开(公告)号：US20120217221A1
公开(公告)日：2012-08-30
申请号：US13193345
申请日：2011-07-28
申请人： Daniel J. Hoffman , Victor Brouk , Daniel Carter
发明人： Daniel J. Hoffman , Victor Brouk , Daniel Carter
IPC分类号： B44C1/22 , B05C11/00 , B05C9/00 , C23C16/52 , C23C16/50
CPC分类号： C23C16/50 , C23C14/345 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber via a remotely generated ionizing electromagnetic field that extends into the plasma chamber from a remote projected source, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能量的系统，方法和装置。一种示例性方法包括将基板放置在等离子体室中，通过远程产生的电离电磁场在等离子体室中形成等离子体，该离子化电磁场从远程投影源延伸到等离子体室中，可控制地将功率切换到基板，以便施加周期性电压功能到基板，并且在周期性电压函数的多个周期中调制周期性电压函数，其响应于衬底表面处的离子能量的期望分布，以便在一段时间内实现所需的离子能量分布依据。

6. 发明申请

US20120052599A1 Wafer Chucking System for Advanced Plasma Ion Energy Processing Systems 有权
标题翻译：用于先进等离子体离子能量处理系统的晶圆卡盘系统
公开(公告)号：US20120052599A1
公开(公告)日：2012-03-01
申请号：US13193299
申请日：2011-07-28
申请人： Victor Brouk , Daniel J. Hoffman
发明人： Victor Brouk , Daniel J. Hoffman
IPC分类号： H01L21/66 , B05C11/00 , H01L21/3065
CPC分类号： C23C16/50 , C23C14/345 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能并将衬底夹持到衬底支撑件的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

7. 发明授权

US08048328B2 Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
公开(公告)号：US08048328B2
公开(公告)日：2011-11-01
申请号：US11612102
申请日：2006-12-18
申请人： Roger A. Lindley , Scott A. Hogenson , Daniel J. Hoffman
发明人： Roger A. Lindley , Scott A. Hogenson , Daniel J. Hoffman
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/306
CPC分类号： H01J37/3266 , H01J37/32623 , H01J37/32688
摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

8. 发明申请

US20110259851A1 SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION 有权
标题翻译：用于控制离子能量分布的系统，方法和装置
公开(公告)号：US20110259851A1
公开(公告)日：2011-10-27
申请号：US12870837
申请日：2010-08-29
申请人： Victor Brouk , Randy Heckman , Daniel J. Hoffman
发明人： Victor Brouk , Randy Heckman , Daniel J. Hoffman
IPC分类号： C23F1/00 , C23C16/52 , C23C16/458 , C23F1/08 , C23C16/50
CPC分类号： H01J37/24 , C23C14/345 , C23C16/50 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能量的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

9. 发明授权

US08021521B2 Method for agile workpiece temperature control in a plasma reactor using a thermal model 有权
标题翻译：使用热模型的等离子体反应器中敏捷工件温度控制的方法
公开(公告)号：US08021521B2
公开(公告)日：2011-09-20
申请号：US11408558
申请日：2006-04-21
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , Williams W. Cowans , Glenn W. Zubillaga , Isaac Millian
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , Williams W. Cowans , Glenn W. Zubillaga , Isaac Millian
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.
摘要翻译：在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力从热模型。

10. 发明授权

US08012304B2 Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
标题翻译：具有多区域热控制前馈控制装置的等离子体反应器
公开(公告)号：US08012304B2
公开(公告)日：2011-09-06
申请号：US11408559
申请日：2006-04-21
申请人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas A. Buchberger, Jr. , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： H01L21/306 , C23C16/46 , C23C16/52
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及联接到所述静电卡盘的相应内部和外部区域的内部和外部区域热交换器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

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