专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110308551A1 METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS 有权
标题翻译：用于诱导加工室清洁气体的涡流的方法和装置
公开(公告)号：US20110308551A1
公开(公告)日：2011-12-22
申请号：US13041230
申请日：2011-03-04
申请人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J.K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Hua Chung , Xizi Dong , Kyawwin Jason Maung , Hiroji Hanawa , Sang Won Kang , David H. Quach , Donald J.K. Olgado , David Bour , Wei-Yung Hsu , Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： B08B9/00 , B08B3/04
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

2. 发明申请

US20110217585A1 INTEGRATED COMPOSITE SEPARATOR FOR LITHIUM-ION BATTERIES 审中-公开
标题翻译：用于锂离子电池的集成复合分离器
公开(公告)号：US20110217585A1
公开(公告)日：2011-09-08
申请号：US12895483
申请日：2010-09-30
申请人： Connie P. Wang , Robert Z. Bachrach , Sergey D. Lopatin , Donald J.K. Olgado , Michael C. Kutney , Zheng Wang
发明人： Connie P. Wang , Robert Z. Bachrach , Sergey D. Lopatin , Donald J.K. Olgado , Michael C. Kutney , Zheng Wang
IPC分类号： H01M2/16 , B05D5/12 , B05B5/16
CPC分类号： B32B37/02 , B32B38/0008 , B32B38/145 , B32B38/164 , B32B39/00 , B32B2037/243 , B32B2309/10 , B32B2310/14 , B32B2457/10 , C04B35/44 , C04B2235/3203 , C04B2235/3262 , C04B2235/3279 , H01M2/145 , H01M2/162 , H01M2/1673 , H01M2/1686 , H01M2/348 , H01M10/052 , H01M10/0565 , H01M2300/0094
摘要： Embodiments of the present invention relate generally to lithium-ion batteries, and more specifically, to batteries having integrated separators and methods of fabricating such batteries. In one embodiment, a lithium-ion battery having an electrode structure is provided. The lithium-ion battery comprises an anode stack, a cathode stack, and an integrated separator formed between the anode stack and the cathode stack. The anode stack comprises an anodic current collector and an anode structure formed over a first surface of the anodic current collector. The cathode stack comprises a cathodic current collector and a cathode structure formed over a first surface of the cathodic current collector. The integrated separator comprises a first ceramic layer, a second ceramic layer, and a polymer material layer deposited between the first ceramic layer and the second ceramic layer.
摘要翻译：本发明的实施方案一般涉及锂离子电池，更具体地，涉及具有集成分离器的电池和制造这种电池的方法。在一个实施例中，提供具有电极结构的锂离子电池。锂离子电池包括阳极堆叠，阴极堆叠和形成在阳极堆叠和阴极堆叠之间的集成隔板。阳极堆叠包括在阳极集电器的第一表面上形成的阳极集电器和阳极结构。阴极堆叠包括在阴极集电器的第一表面上形成的阴极集电器和阴极结构。集成分离器包括第一陶瓷层，第二陶瓷层和沉积在第一陶瓷层和第二陶瓷层之间的聚合物材料层。

3. 发明申请

US20090280727A1 POLISHING SYSTEM WITH THREE HEADED CAROUSEL 审中-公开
标题翻译：具有三头卡车的抛光系统
公开(公告)号：US20090280727A1
公开(公告)日：2009-11-12
申请号：US12118438
申请日：2008-05-09
申请人： LAKSHMANAN KARUPPIAH , Tetsuya Ishikawa , Donald J.K. Olgado , Allen L. D'Ambra , Hung Chih Chen
发明人： LAKSHMANAN KARUPPIAH , Tetsuya Ishikawa , Donald J.K. Olgado , Allen L. D'Ambra , Hung Chih Chen
IPC分类号： B24B29/02 , B24B1/00
CPC分类号： B24B41/005 , B24B27/0076 , B24B37/345
摘要： Embodiments of the present invention provide a polishing module configured to use in a polishing system. The polishing module comprises a base member, two polishing stations disposed on the base member, one load cup, and a carousel having three polishing heads.
摘要翻译：本发明的实施例提供了一种配置成在抛光系统中使用的抛光模块。抛光模块包括基座构件，设置在基座构件上的两个抛光台，一个负载杯和具有三个抛光头的圆盘传送带。

4. 发明申请

US20120234945A1 MULTIPLE LEVEL SHOWERHEAD DESIGN 有权
标题翻译：多层次淋浴设计
公开(公告)号：US20120234945A1
公开(公告)日：2012-09-20
申请号：US13422824
申请日：2012-03-16
申请人： DONALD J.K. OLGADO
发明人： DONALD J.K. OLGADO
IPC分类号： B05B1/00
CPC分类号： C23C16/45565 , B05B1/005 , C23C16/45572 , C23C16/45574
摘要： Embodiments of the present invention generally provide a showerhead assembly made of multiple plates fastened together. The showerhead assembly includes a gas manifold defined by a top and middle plate and a diverter plate defined by the middle plate and a bottom, heat exchange plate. A first processing gas enters the gas manifold and is diverted by the diverter plate through the bottom plate. A second processing gas enters the gas manifold and is diverted by the diverter plate through the bottom plate such that the second and first processing gases do not mix prior to exiting the showerhead. In one embodiment, the first processing gas can be distributed through central and outer regions of the showerhead at different flow rates and/or pressures. In addition, the second processing gas can be distributed through the central and outer regions of the showerhead at different flow rates and/or pressures.
摘要翻译：本发明的实施例通常提供由多个板固定在一起的喷头组件。喷头组件包括由中间板和中间板限定的气体歧管和由中间板和底部热交换板限定的分流板。第一处理气体进入气体歧管并由分流板通过底板转向。第二处理气体进入气体歧管，并由分流板通过底板转向，使得第二处理气体和第一处理气体在离开喷头之前不混合。在一个实施例中，第一处理气体可以以不同的流速和/或压力分布在喷头的中心和外部区域。此外，第二处理气体可以以不同的流速和/或压力分布在喷头的中心和外部区域。

5. 发明申请

US20120118225A1 EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE 审中-公开
标题翻译： LED制造中的外延生长温度控制
公开(公告)号：US20120118225A1
公开(公告)日：2012-05-17
申请号：US13231852
申请日：2011-09-13
申请人： Wei-Yung HSU , Alain DUBOUST , Hua CHUNG , Liang-Yuh CHEN , Donald J.K. OLGADO
发明人： Wei-Yung HSU , Alain DUBOUST , Hua CHUNG , Liang-Yuh CHEN , Donald J.K. OLGADO
IPC分类号： C30B25/16 , B05C11/06 , C30B25/10 , H01L21/66
CPC分类号： C23C16/52 , C30B25/10 , C30B25/16 , H01L21/67248 , H01L33/007
摘要： Apparatus and method for control of epitaxial growth temperatures during manufacture of light emitting diodes (LEDs). Embodiments include measurement of a substrate and/or carrier temperature during a recipe stabilization period; determination of a temperature drift based on the measurement; and modification of a growth temperature based on a temperature offset determined in response to the temperature drift exceeding a threshold criteria. In an embodiment, a statistic derived from a plurality of pyrometric measurements made during the recipe stabilization over several runs is employed to offset each of a set of growth temperatures utilized to form a multiple quantum well (MQW) structure.
摘要翻译：用于在制造发光二极管（LED）期间控制外延生长温度的装置和方法。实施例包括在食谱稳定期间测量基质和/或载体温度; 基于测量确定温度漂移; 以及基于响应于超过阈值标准的温度漂移确定的温度偏移来修改生长温度。在一个实施例中，采用在多次运行中的配方稳定期间进行的多个高温测量得到的统计量来抵消用于形成多量子阱（MQW）结构的一组生长温度中的每一个。

6. 发明申请

US20110097518A1 VERTICALLY INTEGRATED PROCESSING CHAMBER 审中-公开
标题翻译：垂直整体式加工室
公开(公告)号：US20110097518A1
公开(公告)日：2011-04-28
申请号：US12914996
申请日：2010-10-28
申请人： Donald J.K. Olgado
发明人： Donald J.K. Olgado
IPC分类号： H05H1/46 , C23C16/453
CPC分类号： H05H1/46 , C23C16/4587 , C23C16/54 , H01J37/32
摘要： A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.
摘要翻译：描述了用于基本垂直取向的基板的等离子体处理的方法和装置。基板定位在包括至少两个基本上垂直定向的框架的载体上。载体设置在等离子体室中，天线结构位于基板之间。多个等离子体室可以连接到具有用于将载体引导到目标室的转盘的转移室。装载机在载体和负载锁定室之间移动基板，其中基板在基本上水平的位置上分段。

7. 发明申请

US20090038642A1 METHODS AND APPARATUS FOR CLEANING AN EDGE OF A SUBSTRATE 审中-公开
标题翻译：清洗衬底边缘的方法和装置
公开(公告)号：US20090038642A1
公开(公告)日：2009-02-12
申请号：US12249922
申请日：2008-10-11
申请人： Wei-Yung Hsu , Donald J.K. Olgado , Ho Seon Shin , Liang-Yuh Chen
发明人： Wei-Yung Hsu , Donald J.K. Olgado , Ho Seon Shin , Liang-Yuh Chen
IPC分类号： B08B1/04
CPC分类号： H01L21/67046 , B08B1/04 , H01L21/67028
摘要： In one aspect, a method for cleaning an edge of a substrate is provided. The method comprises employing one or more rollers of a first diameter to rotate a substrate; contacting an edge of the substrate with one or more rollers of a second diameter that is larger than the first diameter; and cleaning the edge of the substrate using the one or more rollers of the second diameter. Numerous other aspects are provided.
摘要翻译：一方面，提供一种清洗基板的边缘的方法。该方法包括采用一个或多个第一直径的辊来旋转衬底; 使所述基板的边缘与大于所述第一直径的第二直径的一个或多个辊接触; 以及使用所述第二直径的所述一个或多个辊清洁所述基板的边缘。提供了许多其他方面。

8. 发明申请

US20120037068A1 COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY 审中-公开
标题翻译：用于直接加热和增加温度均匀性的复合基材
公开(公告)号：US20120037068A1
公开(公告)日：2012-02-16
申请号：US13026874
申请日：2011-02-14
申请人： Jie Su , Donald J.K. Olgado , Michael C. Kutney
发明人： Jie Su , Donald J.K. Olgado , Michael C. Kutney
IPC分类号： C30B25/02 , B23Q3/00 , F27D11/00
CPC分类号： F27B17/0025 , C23C16/4586 , C23C16/46 , C30B23/063 , C30B25/105 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate.
摘要翻译：本发明的实施例一般涉及用于均匀加热衬底的装置和方法。该装置包括具有至少一个电极和介电涂层的可转移圆盘。可转移的圆盘可以相对于基板偏压组件偏置，并且在制造过程中独立于偏置组件传递，同时保持相对于基板的偏压。圆盘吸收来自热源的辐射热，并将热量均匀地传导到耦合到冰球的基底。圆盘具有高辐射率和高导热性，用于吸收并将辐射热传递到基底。高导热性允许跨基板的均匀温度分布，从而增加沉积均匀性。该方法包括将光吸收材料设置在光学透明基板上，并且用辐射热源辐射光吸收材料以加热光学透明基板。

9. 发明申请

US20120012049A1 HVPE CHAMBER 审中-公开
标题翻译： HVPE室
公开(公告)号：US20120012049A1
公开(公告)日：2012-01-19
申请号：US13184390
申请日：2011-07-15
申请人： Wei-Yung Hsu , Donald J.K. Olgado , Anzhong Chang
发明人： Wei-Yung Hsu , Donald J.K. Olgado , Anzhong Chang
IPC分类号： C30B25/08 , C30B35/00 , C30B25/12
CPC分类号： C30B25/12 , C23C16/303 , C23C16/45502 , C23C16/45565 , C23C16/45574 , C23C16/45578 , C30B25/08 , C30B25/14
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have one or more precursor sources coupled thereto. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the precursors and at a lower temperature. The chamber has a truncated box shape formed by a curved cover which improves the flow of the nitrogen and precursor gases and the uniformity of the film deposition.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有一个或多个耦合到其上的前体源。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与前体和较低温度的分开的位置处引入处理室。该腔室具有由弯曲盖形成的截头形箱形状，其改善了氮气和前体气体的流动以及膜沉积的均匀性。

10. 发明申请

US20110097878A1 CHAMBER FOR PECVD 审中-公开
标题翻译： PECVD室
公开(公告)号：US20110097878A1
公开(公告)日：2011-04-28
申请号：US12914997
申请日：2010-10-28
申请人： Donald J.K. Olgado
发明人： Donald J.K. Olgado
IPC分类号： H01L21/20 , C23C16/448 , C23C16/44
CPC分类号： H05H1/46 , C23C16/4587 , C23C16/54 , H01J37/32
摘要： A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position.
摘要翻译：描述了用于基本垂直取向的基板的等离子体处理的方法和装置。基板定位在包括至少两个基本上垂直定向的框架的载体上。载体设置在等离子体室中，天线结构位于基板之间。多个等离子体室可以连接到具有用于将载体引导到目标室的转盘的转移室。装载机在载体和负载锁定室之间移动基板，其中基板在基本上水平的位置上分段。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式