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1. 发明申请

US20120149192A1 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：US20120149192A1
公开(公告)日：2012-06-14
申请号：US13223788
申请日：2011-09-01
申请人： KARL BROWN , ALAN RITCHIE , JOHN PIPITONE , YING RUI , DANIEL J. HOFFMAN
发明人： KARL BROWN , ALAN RITCHIE , JOHN PIPITONE , YING RUI , DANIEL J. HOFFMAN
IPC分类号： H01L21/768
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

2. 发明授权

US07879183B2 Apparatus and method for front side protection during backside cleaning 失效
标题翻译：背面清洁时的前侧保护装置和方法
公开(公告)号：US07879183B2
公开(公告)日：2011-02-01
申请号：US12038499
申请日：2008-02-27
申请人： Imad Yousif , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： Imad Yousif , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： H01L21/306 , C23C16/00 , C23C16/455
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

3. 发明申请

US20090214798A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 失效
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20090214798A1
公开(公告)日：2009-08-27
申请号：US12038499
申请日：2008-02-27
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： H01L21/306 , H01L21/308 , H01L21/67 , B05B1/14
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

4. 发明申请

US20100314244A1 Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition 审中-公开
公开(公告)号：US20100314244A1
公开(公告)日：2010-12-16
申请号：US12560798
申请日：2009-09-16
申请人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
发明人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
IPC分类号： C23C14/46
CPC分类号： C23C14/354 , C23C14/3471 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

5. 发明申请

US20090293907A1 METHOD OF SUBSTRATE POLYMER REMOVAL 审中-公开
标题翻译：底物聚合物去除方法
公开(公告)号：US20090293907A1
公开(公告)日：2009-12-03
申请号：US12246137
申请日：2008-10-06
申请人： Nancy Fung , Siyi Li , Ying Rui , Walter R. Merry , Anchel Sheyner , Kathryn Keswick , Shing-Li Sung , Mang-Mang Ling , Chia-Ling Kao , Wei-Te Wu , Kang-Lie Chiang
发明人： Nancy Fung , Siyi Li , Ying Rui , Walter R. Merry , Anchel Sheyner , Kathryn Keswick , Shing-Li Sung , Mang-Mang Ling , Chia-Ling Kao , Wei-Te Wu , Kang-Lie Chiang
IPC分类号： B08B6/00
CPC分类号： H01L21/67069 , G03F7/427 , H01L21/02087 , H01L21/0209
摘要： Methods for cleaning a substrate are provided. In one embodiment, the method includes depositing a polymer on a substrate. A cleaning gas is provided to clean a frontside, a bevel edge, and a backside of the substrate. The cleaning gas may include various reactive chemicals such as H2 and N2 in one embodiment. In another embodiment, the cleaning gas may include H2 and H2O. Plasma is initiated from the cleaning gas and used to remove polymer that formed on a bevel edge, backside, or frontside of the substrate during semiconductor processing.
摘要翻译：提供了清洗基板的方法。在一个实施方案中，该方法包括在基底上沉积聚合物。提供清洁气体以清洁基板的前侧，斜边和背面。在一个实施方案中，清洁气体可以包括各种反应性化学品，例如H 2和N 2。在另一个实施方案中，清洁气体可以包括H 2和H 2 O. 等离子体从清洁气体引发，并用于去除在半导体处理期间在衬底的斜边缘，背面或前面形成的聚合物。

6. 发明申请

US20090229969A1 Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
标题翻译：在晶片表面具有各向同性离子速度分布的物理气相沉积方法
公开(公告)号：US20090229969A1
公开(公告)日：2009-09-17
申请号：US12077067
申请日：2008-03-14
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
摘要翻译：在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

7. 发明申请

US20090191711A1 HARDMASK OPEN PROCESS WITH ENHANCED CD SPACE SHRINK AND REDUCTION 审中-公开
标题翻译： HARDMASK开放过程，具有增强的CD空间收缩和减少
公开(公告)号：US20090191711A1
公开(公告)日：2009-07-30
申请号：US12022496
申请日：2008-01-30
申请人： Ying Rui , Nancy Fung , Xiaoye Zhao , Kevin Mikio Mukai , Yasunobu Iwamoto
发明人： Ying Rui , Nancy Fung , Xiaoye Zhao , Kevin Mikio Mukai , Yasunobu Iwamoto
IPC分类号： H01L21/306 , C23F1/08
CPC分类号： H01L21/31144 , G03F7/091 , G03F7/40 , H01J37/32091 , H01J37/3244 , H01J37/3266 , H01L21/0337 , H01L21/0338 , H01L21/31116 , H01L21/31138 , H01L21/76802
摘要： Methods for forming an ultra thin structure. The method includes a polymer deposition and etching process. In one embodiment, the methods may be utilized to form fabricate submicron structure having a critical dimension less than 30 nm and beyond. The method further includes a multiple etching processes. The processes may be varied to meet different process requirements. In one embodiment, the process gently etches the substrate while shrinking critical dimension of the structures formed within the substrate. The dimension of the structures may be shank by coating a photoresist like polymer to sidewalls of the formed structure, but substantially no polymer accumulation on the bottom surface of the formed structure on the substrate. The embodiments described herein also provide high selectivity in between each layers formed on the substrate during the fabricating process and preserving a good control of profile formed within the structure.
摘要翻译：形成超薄结构的方法。该方法包括聚合物沉积和蚀刻工艺。在一个实施方案中，可以利用这些方法形成临界尺寸小于30nm及以上的制造亚微米结构。该方法还包括多次蚀刻工艺。可以改变过程以满足不同的工艺要求。在一个实施例中，该方法在收缩衬底内形成的结构的临界尺寸的同时轻轻蚀刻衬底。结构的尺寸可以通过将光致抗蚀剂像聚合物涂覆到所形成的结构的侧壁上而基本上没有聚合物聚集在基底上形成的结构的底表面上。本文描述的实施例还在制造过程期间在形成在基板上的每个层之间提供高选择性，并且保持对在结构内形成的轮廓的良好控制。

8. 发明申请

US20090156013A1 Method and apparatus for removing polymer from the wafer backside and edge 失效
标题翻译：从晶片背面和边缘去除聚合物的方法和设备
公开(公告)号：US20090156013A1
公开(公告)日：2009-06-18
申请号：US12001989
申请日：2007-12-12
申请人： Imad Yousif , Anchel Sheyner , Ajit Balakrishna , Nancy Fung , Ying Rui , Martin Jeffrey Salinas , Walter R. Merry , Shahid Rauf
发明人： Imad Yousif , Anchel Sheyner , Ajit Balakrishna , Nancy Fung , Ying Rui , Martin Jeffrey Salinas , Walter R. Merry , Shahid Rauf
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32357 , H01J37/3244 , H01L21/02087 , H01L21/0209
摘要： Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.
摘要翻译：使用延伸穿过反应器侧壁的弧形侧气体注入喷嘴从保持在反应器中的支撑基座上的晶片的背面去除聚合物，其具有与晶片边缘匹配的曲率，并且从远程等离子体源提供等离子体副产物。

9. 发明申请

US20090138766A1 SYSTEM AND METHOD FOR ERROR REPORTING IN SOFTWARE APPLICATIONS 有权
标题翻译：软件应用中错误报告的系统和方法
公开(公告)号：US20090138766A1
公开(公告)日：2009-05-28
申请号：US12323501
申请日：2008-11-26
申请人： Su Ying Rui , Shou Hui Wang , Zhi Yu Yue , Li Zhang
发明人： Su Ying Rui , Shou Hui Wang , Zhi Yu Yue , Li Zhang
IPC分类号： G06F11/07
CPC分类号： G06F11/0778 , G06F11/0748
摘要： The invention relates to a system and a method for error reporting in software applications. A system in accordance with an embodiment includes: a dummy document generating unit for generating a dummy document from an original document, wherein the dummy document maintains a skeleton of the original document and contains dummy data as its content; and a dummy document reporting unit for sending the generated dummy document in an error report.
摘要翻译：本发明涉及一种用于软件应用中的错误报告的系统和方法。根据实施例的系统包括：虚拟文档生成单元，用于从原始文档生成虚拟文档，其中所述虚拟文档维护原始文档的框架并且包含伪数据作为其内容; 以及用于在错误报告中发送所生成的虚拟文档的虚拟文档报告单元。

10. 发明申请

US20080121345A1 MAGNETIC CONFINEMENT OF A PLASMA 失效
标题翻译：等离子体的磁性限制
公开(公告)号：US20080121345A1
公开(公告)日：2008-05-29
申请号：US11564206
申请日：2006-11-28
申请人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
发明人： Steven C. Shannon , Masao Drexel , James A. Stinnett , Ying Rui , Ying Xiao , Roger A. Lindley , Imad Yousif
IPC分类号： H01L21/306
CPC分类号： H01J37/3266 , H01J37/32082 , H01J37/32623
摘要： A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.
摘要翻译：本文提供了一种限制等离子体的方法和装置。在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及第二区域，其中等离子体将被选择性地限制。磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。

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