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    • 4. 发明申请
    • ILLUMINATION OPTICAL SYSTEM FOR PROJECTION LITHOGRAPHY
    • 用于投影光刻的照明光学系统
    • WO2012076454A1
    • 2012-06-14
    • PCT/EP2011/071714
    • 2011-12-05
    • CARL ZEISS SMT GMBHOSSMANN, JensENDRES, MartinSTÜTZLE, Ralf
    • OSSMANN, JensENDRES, MartinSTÜTZLE, Ralf
    • G03F7/20
    • G03F7/70141G03F7/70058
    • An illumination optical system for projection lithography has an optical assembly for guiding illumination light to an object field (19) to be illuminated in an object plane (17). The illumination optical system divides a bundle of the illumination light into a plurality of part bundles, which are allocated to various illumination directions of the object field illumination. The illumination optical system is configured in such a way that at least some of the part bundles are superimposed on one another in a first superimposition plane (31) according to a first superimposition specification and in a second superimposition plane (16), which is spaced apart from the first superimposition plane (31), according to a second superimposition specification. The result is an illumination optical system, in which an influencing and/or a monitoring of an illumination intensity distribution over the object field is made possible, as far as possible without influencing an illumination angle distribution.
    • 用于投影光刻的照明光学系统具有用于将照明光引导到在物平面(17)中被照明的物场(19)的光学组件。 照明光学系统将一束照明光分成分配给物场照明的各种照明方向的多个部分束。 照明光学系统被配置成使得至少一些部分束根据第一叠加指示在第一叠加平面(31)中彼此重叠,并且在第二叠加平面(16)中被间隔开 除了第一叠加平面(31)之外,根据第二重叠规格。 结果是在不影响照明角度分布的情况下尽可能地使对物场的照明强度分布的影响和/或监视成为可能的照明光学系统。
    • 5. 发明申请
    • ILLUMINATION OPTICAL SYSTEM FOR EUV PROJECTION LITHOGRAPHY
    • 用于EUV投影光刻的照明光学系统
    • WO2011154244A1
    • 2011-12-15
    • PCT/EP2011/058418
    • 2011-05-24
    • CARL ZEISS SMT GMBHPATRA, MichaelDITTMANN, OlafKIRCH, MarcENDRES, MartinWALTER, MarkusBIELING, StigDÖRN, Sebastian
    • PATRA, MichaelDITTMANN, OlafKIRCH, MarcENDRES, MartinWALTER, MarkusBIELING, StigDÖRN, Sebastian
    • G03F7/20G02B26/08
    • G03F7/70116G02B26/0833G03F7/70075
    • An illumination optical system for EUV projection lithography for illuminating an illumination field, in which an object field of a following imaging optical system can be arranged, has a first facet mirror with a plurality of first facets (7 1 ) for the reflective guidance of part bundles of a bundle of EUV illumination light (3). A downstream second facet mirror (10) with a plurality of second facets (11) is used for the reflective guidance of the part bundles (3 1 ; 3 1' ) reflected by the first facets (7 1 ), so object field illumination channels, to which, in each case, a first (7 1 ) and a second (11 1 ; 11 1' ) facet is allocated in each case, are predetermined by the first facets (7) and the second facets (11 1 ; 11 1' ) allocated by means of the reflected bundle guidance. The reflection faces of at least some of the first facets (7 1 ) are tiltable in each case between at least one illumination tilting position to guide the part bundle along an object field illumination channel (3 1 ; 3 1' ) in the direction of one of the second facets (11 1 ; 11 1' ) and at least one switch-off tilting position to guide the part bundle in the direction of a switch-off beam path (30) not impinging on the object field. The direction of the switch-off beam path (30) differs from the direction of the object field illumination channel (3 1 ; 3 1' ). In addition, methods for predetermining a set of switch-off tilting positions of the tiltable first facets (7) are disclosed. The result is an illumination optical system, with which a fine adjustment of illumination settings to be predetermined for the illumination of the illumination field is possible.
    • 一种用于EUV投影光刻的照明光学系统,用于照亮其中可以布置后续成像光学系统的物场的照明场,具有第一刻面镜,其具有多个第一刻面(71),用于部分束的反射引导 的一束EUV照明灯(3)。 具有多个第二小面(11)的下游第二分面反射镜(10)用于由第一面(71)反射的部分束(31; 31')的反射引导,因此物场照明通道 在每种情况下,在每种情况下分配第一(71)和第二(111; 111')面是由第一面(7)和第二面(111; 111')预先分配 反映束指导。 第一小面(71)中的至少一些的反射面在每种情况下可在至少一个照明倾斜位置之间倾斜,以沿着物场照明通道(31; 31')沿着物体照明通道 第二小面(111; 111')和至少一个关闭倾斜位置,以沿着不撞击物体场的关闭光束路径(30)的方向引导部分束。 关闭光束路径(30)的方向与物场照明通道(31; 31')的方向不同。 此外,公开了用于预先确定可倾斜第一面(7)的一组关闭倾斜位置的方法。 结果是照明光学系统,可以对照明场的照明进行预定的照明设置的微调。
    • 8. 发明申请
    • BELEUCHTUNGSOPTIK FÜR DIE EUV-MIKROLITHOGRAPHIE
    • 照明光学系统微EUV光刻
    • WO2010049020A1
    • 2010-05-06
    • PCT/EP2009/005113
    • 2009-07-14
    • CARL ZEISS SMT AGDENGEL, GuentherWITTICH, GeroDINGER, UdoSTUETZLE, RalfENDRES, MartinOSSMANN, JensWARM, Berndt
    • DENGEL, GuentherWITTICH, GeroDINGER, UdoSTUETZLE, RalfENDRES, MartinOSSMANN, JensWARM, Berndt
    • G03F7/20
    • G03F7/7085G03F7/70141G03F7/702G03F7/70558
    • Eine Beleuchtungsoptik (47) für die EUV-Mikrolithographie dient zur Ausleuchtung eines Objektfeldes (19) mit einem EUV-Nutzstrahlungsbündel (3). Zur Vorgabe von Beleuchtungsparametern dienen Vorgabeeinrichtungen (6, 10). Zur Korrektur der Intensitätsverteilung und/oder der Winkelverteilung der Objektfeldbeleuchtung dient eine Beleuchtungs-Korrektureinrichtung. Diese hat eine zumindest teilweise mit dem Nutzstrahlungsbündel (3) vor dem Objektfeld (19) beaufschlagte und gesteuert angetrieben verlagerbare optische Komponente (13). Ein Detektor (50, 53) dient zur Erfassung eines der Beleuchtungsparameter. Eine Auswerteeinrichtung (31) dient zur Auswertung der Detektordaten und zur Umsetzung von diesen in Steuersignale. Mindestens ein Aktor (61, 62) dient zur Verlagerung der optischen Komponente (13). Während Belichtungen werden die Stellelemente so mit den Detektorsignalen geregelt, dass während der Dauer einer Projektionsbelichtung eines maximale Verlagerung von Rändern des Objektfeldes (19) zu einem zu belichtenden Objekt (18) von unter 8 μm gewährleistet ist. Es resultiert eine Beleuchtungsoptik, mit der die Einhaltung vorgegebener Beleuchtungsparameter auch bei höchsten Präzisionsanforderungen gewährleistet
    • 用于EUV微光刻的照明光学部件(47)用于与EUVNutzstrahlungsbündel(3)照明物场(19)。 用于指定照明参数指示装置用作(6,10)。 照明校正装置用于校正的强度分布和/或物场照明的角度分布。 这已作用于至少部分与所述物场(19)和控制驱动可移动光学部件(13)的Nutzstrahlungsbündel(3)的上游。 的检测器(50,53)用于检测所述照明参数中的一个。 的评估装置(31),用于将检测器数据的评估并将其转换成控制信号。 至少一个致动器(61,62)用于将光学部件(13)的位移。 在曝光被控制以便与被保证在物场(19)的边缘的最大位移的投影曝光的持续时间的对象的检测器信号中的调节元件,以小于8微米(18)被暴露。 其结果是与即使在最高的精度要求具有特定照明参数确保符合的照明光学部件
    • 9. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS COMPRISING AN ILLUMINATION OPTICS OF THIS TYPE
    • 用于EUV微结构和照明系统的照明光学和包含这种类型的照明光学的投影曝光装置
    • WO2009132756A1
    • 2009-11-05
    • PCT/EP2009/002584
    • 2009-04-08
    • CARL ZEISS SMT AGFIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • FIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • G03F7/20
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography serves for guiding an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension (x) and a shorter field dimension (y), the ratio being considerably greater than 1. A field facet mirror (13) has a plurality of field facets (19) for setting defined illumination conditions in the object field. A following optics downstream of the field facet mirror (13) serves for transmitting the illumination light into the object field (5). The following optics comprises a pupil facet mirror (14) with a plurality of pupil facets (27). The field facets (19) are in each case individually allocated to the pupil facets (27) so that portions of the illumination light bundle (10) impinging upon in each case one of the field facets (19) are guided on to the object field (5) via the associated pupil facet (27). The field facet mirror (13) not only comprises a plurality of basic illumination field facets (19 G ) which provide a basic illumination of the object field (5) via associated basic illumination pupil facets (27 G ) but also a plurality of correction illumination field facets (19 K ) which provide for a correction of the illumination of the object field (5) via associated correction illumination pupil facets (27 K ). The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件用于将照明光束从辐射源引导到物场,其具有在较长场尺寸(x)和较短场尺寸(y)之间的延伸比,该比率远大于1。 场面反射镜(13)具有多个场面(19),用于在对象场中设定定义的照明条件。 场面反射镜(13)下游的跟随光学器件用于将照明光发射到物场(5)中。 以下光学器件包括具有多个光瞳面(27)的光瞳小面镜(14)。 场分面(19)在每种情况下分别被分配给光瞳面(27),使得照射光束(10)中的每一个场景面(19)中的一个照射的部分被引导到物场 (5)通过相关联的光瞳面(27)。 场面反射镜(13)不仅包括通过相关联的基本照明光瞳(27G)提供对象场(5)的基本照明的多个基本照明场面(19G),而且还包括多个校正照明场面 (19K),其经由相关联的校正照明光瞳面(27K)提供对物场(5)的照明的校正。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 10. 发明申请
    • PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY
    • 投影目标的微观算法
    • WO2009115180A1
    • 2009-09-24
    • PCT/EP2009/001448
    • 2009-02-28
    • CARL ZEISS SMT AGZELLNER, JohannesMANN, Hans-JürgenENDRES, Martin
    • ZELLNER, JohannesMANN, Hans-JürgenENDRES, Martin
    • G03F7/20
    • G03F7/70316G02B17/0663G03F7/702G03F7/70233
    • A projection objective (7) for microlithography is used for imaging an object field (4) in an object plane (5) into an image field (8) in an image plane (9). The projection objective (7) comprises at least six mirrors (M1 to M6) of which at least one mirror has a freeform reflecting surface. According to one aspect of the invention, the ratio between an overall length (T) of the projection objective (7) and an object image shift (d OIS ) is smaller than 12. According to another aspect of the invention, the image plane (9) is the first field plane of the projection objective (7) downstream of the object plane (5). According to another aspect of the invention, the projection objective has a plurality of mirrors (M1 to M6), wherein the ratio between an overall length (T) and an object image shift (d OIS ) is smaller than 2.
    • 用于微光刻的投影物镜(7)用于将物平面(5)中的物场(4)成像为图像平面(9)中的图像场(8)。 投影物镜(7)包括至少六个反射镜(M1至M6),其中至少一个反射镜具有自由形反射表面。 根据本发明的一个方面,投影物镜(7)的总长(T)与物体像偏移(dOIS)之间的比率小于12.根据本发明的另一方面,图像平面(9 )是物平面(5)下游的投影物镜(7)的第一场平面。 根据本发明的另一方面,投影物镜具有多个反射镜(M1至M6),其中总长度(T)和物体图像偏移(dOIS)之间的比率小于2。