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    • 1. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS COMPRISING AN ILLUMINATION OPTICS OF THIS TYPE
    • 用于EUV微结构和照明系统的照明光学和包含这种类型的照明光学的投影曝光装置
    • WO2009132756A1
    • 2009-11-05
    • PCT/EP2009/002584
    • 2009-04-08
    • CARL ZEISS SMT AGFIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • FIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • G03F7/20
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography serves for guiding an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension (x) and a shorter field dimension (y), the ratio being considerably greater than 1. A field facet mirror (13) has a plurality of field facets (19) for setting defined illumination conditions in the object field. A following optics downstream of the field facet mirror (13) serves for transmitting the illumination light into the object field (5). The following optics comprises a pupil facet mirror (14) with a plurality of pupil facets (27). The field facets (19) are in each case individually allocated to the pupil facets (27) so that portions of the illumination light bundle (10) impinging upon in each case one of the field facets (19) are guided on to the object field (5) via the associated pupil facet (27). The field facet mirror (13) not only comprises a plurality of basic illumination field facets (19 G ) which provide a basic illumination of the object field (5) via associated basic illumination pupil facets (27 G ) but also a plurality of correction illumination field facets (19 K ) which provide for a correction of the illumination of the object field (5) via associated correction illumination pupil facets (27 K ). The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件用于将照明光束从辐射源引导到物场,其具有在较长场尺寸(x)和较短场尺寸(y)之间的延伸比,该比率远大于1。 场面反射镜(13)具有多个场面(19),用于在对象场中设定定义的照明条件。 场面反射镜(13)下游的跟随光学器件用于将照明光发射到物场(5)中。 以下光学器件包括具有多个光瞳面(27)的光瞳小面镜(14)。 场分面(19)在每种情况下分别被分配给光瞳面(27),使得照射光束(10)中的每一个场景面(19)中的一个照射的部分被引导到物场 (5)通过相关联的光瞳面(27)。 场面反射镜(13)不仅包括通过相关联的基本照明光瞳(27G)提供对象场(5)的基本照明的多个基本照明场面(19G),而且还包括多个校正照明场面 (19K),其经由相关联的校正照明光瞳面(27K)提供对物场(5)的照明的校正。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 5. 发明申请
    • OPTICAL SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION APPARATUS
    • 用于微晶投影装置的光学系统
    • WO2011147658A1
    • 2011-12-01
    • PCT/EP2011/056830
    • 2011-04-29
    • CARL ZEISS SMT GMBHSÄNGER, IngoSCHARNWEBER, RalfDITTMANN, OlafGRUNER, ToralfWEIß, GundulaMAJOR, András G.VOGT, MartinDEGÜNTHER, MarkusWANGLER, JohannesKORB, ThomasWALDIS, Severin
    • SÄNGER, IngoSCHARNWEBER, RalfDITTMANN, OlafGRUNER, ToralfWEIß, GundulaMAJOR, András G.VOGT, MartinDEGÜNTHER, MarkusWANGLER, JohannesKORB, ThomasWALDIS, Severin
    • G03F7/20
    • G03F7/70116G03F7/70566
    • The invention concerns an optical system for a microlithographic projection exposure apparatus and a microlithographic exposure method. In an embodiment an optical system for a microlithographic projection exposure apparatus includes at least one mirror arrangement (200, 720, 730, 920) having a plurality of mirror elements (200a, 200b, 200c, 721, 722, 733, 731, 732, 733,...) which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement (200, 720, 730, 920), and at least one manipulator (300, 720, 910) which is arranged downstream of said mirror arrangement (200, 720, 730, 920) in the light propagation direction and has a raster arrangement of manipulator elements (301, 302,..., 600, 721, 722, 723,... ) in such a way that light incident on the manipulator (300, 600, 720, 910) in operation of the optical system is influenced differently in its polarisation state and/or in its intensity in dependence on the incidence location, wherein at least two mutually different illumination settings (420, 520) are adjustable by the variation in an angular distribution of the light reflected by the mirror arrangement (200), wherein said illumination settings (420, 520) differ from each other in that identical regions of a pupil plane of the illumination system (10) are illuminated with light of a different polarisation state.
    • 本发明涉及一种用于微光刻投影曝光装置和微光刻曝光方法的光学系统。 在一个实施例中,用于微光刻投影曝光装置的光学系统包括具有多个反射镜元件(200a,200b,200c,721,722,733,731,732,920)的至少一个反射镜装置(200,720,730,920) 733,...),其可彼此独立地移位,以改变由反射镜装置(200,720,730,920)反射的光的角分布,以及至少一个操纵器(300,720,910),其是 在光传播方向上布置在所述反射镜装置(200,720,730,920)的下游,并且具有光栅装置,其中所述操纵元件(301,302,...,600,721,722,723,...) 入射在光学系统操作的操纵器(300,600,720,910)上的光的偏振状态和/或其强度根据入射位置受到不同的影响,其中至少两个相互不同 照明设置(420,520)可通过角度dist的变化进行调节 由反射镜装置(200)反射的光的贡献,其中所述照明设置(420,520)彼此不同,因为照明系统(10)的光瞳平面的相同区域被不同偏振态的光照射 。