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    • 1. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS COMPRISING AN ILLUMINATION OPTICS OF THIS TYPE
    • 用于EUV微结构和照明系统的照明光学和包含这种类型的照明光学的投影曝光装置
    • WO2009132756A1
    • 2009-11-05
    • PCT/EP2009/002584
    • 2009-04-08
    • CARL ZEISS SMT AGFIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • FIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • G03F7/20
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography serves for guiding an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension (x) and a shorter field dimension (y), the ratio being considerably greater than 1. A field facet mirror (13) has a plurality of field facets (19) for setting defined illumination conditions in the object field. A following optics downstream of the field facet mirror (13) serves for transmitting the illumination light into the object field (5). The following optics comprises a pupil facet mirror (14) with a plurality of pupil facets (27). The field facets (19) are in each case individually allocated to the pupil facets (27) so that portions of the illumination light bundle (10) impinging upon in each case one of the field facets (19) are guided on to the object field (5) via the associated pupil facet (27). The field facet mirror (13) not only comprises a plurality of basic illumination field facets (19 G ) which provide a basic illumination of the object field (5) via associated basic illumination pupil facets (27 G ) but also a plurality of correction illumination field facets (19 K ) which provide for a correction of the illumination of the object field (5) via associated correction illumination pupil facets (27 K ). The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件用于将照明光束从辐射源引导到物场,其具有在较长场尺寸(x)和较短场尺寸(y)之间的延伸比,该比率远大于1。 场面反射镜(13)具有多个场面(19),用于在对象场中设定定义的照明条件。 场面反射镜(13)下游的跟随光学器件用于将照明光发射到物场(5)中。 以下光学器件包括具有多个光瞳面(27)的光瞳小面镜(14)。 场分面(19)在每种情况下分别被分配给光瞳面(27),使得照射光束(10)中的每一个场景面(19)中的一个照射的部分被引导到物场 (5)通过相关联的光瞳面(27)。 场面反射镜(13)不仅包括通过相关联的基本照明光瞳(27G)提供对象场(5)的基本照明的多个基本照明场面(19G),而且还包括多个校正照明场面 (19K),其经由相关联的校正照明光瞳面(27K)提供对物场(5)的照明的校正。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 3. 发明申请
    • ILLUMINATION OPTICS FOR MICROLITHOGRAPHY
    • 用于微结构的照明光学
    • WO2009074211A1
    • 2009-06-18
    • PCT/EP2008/009786
    • 2008-11-20
    • CARL ZEISS SMT AGENDRES, MartinSTÜTZLE, RalfOSSMANN, Jens
    • ENDRES, MartinSTÜTZLE, RalfOSSMANN, Jens
    • G03F7/20
    • G03F7/702G03F7/70075G03F7/70083G03F7/70191
    • An illumination optics for microlithography comprises an optical assembly for guiding illumination light to an object field (19) to be illuminated in an object plane. According to a first aspect of the invention, the illumination optics (26) divides an illumination light radiation bundle (3) into a plurality of radiation sub-bundles (28 to 30) which are assigned to different illumination angles of the object field illumination. The illumination optics (26) is configured in such a way that at least some of the radiation sub-bundles (28 to 30) are superimposed in a superposition plane (16) which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges (32) of the superimposed radiation sub-bundles (28 to 30) coincide at least partially. According to another aspect of the invention, a field intensity setting device (24) comprises a plurality of adjacent individual diaphragms (27) which at least attenuate illumination light (3) when exposed thereto. These individual diaphragms (27) are insertable into an illumination light radiation bundle (3) in a direction parallel to an object displacement direction (y). All individual diaphragms (27) of the field intensity setting device (24) are insertable into the illumination light radiation bundle (3) from one and the same side.
    • 用于微光刻的照明光学器件包括用于将照明光引导到要在物平面中照明的物场(19)的光学组件。 根据本发明的第一方面,照明光学器件(26)将照明光辐射束(3)划分成被分配给物场照明的不同照明角度的多个辐射子束(28至30)。 照明光学器件(26)被配置成使得辐射子束(28至30)中的至少一些被叠加在叠加平面(16)中,该叠加平面(16)与物平面间隔开并且不被成像到 物体平面,其中发生叠加。 这种叠加使得叠加的辐射子束(28至30)的边缘(32)至少部分地重合。 根据本发明的另一方面,一种场强设定装置(24)包括多个相邻的各个隔膜(27),当暴露在其上时至少使照明光(3)衰减。 这些单独的隔膜(27)可以在与物体位移方向(y)平行的方向上插入到照明光辐射束(3)中。 场强设定装置(24)的各个隔膜(27)可从同一侧插入照明光辐射束(3)。
    • 4. 发明申请
    • BELEUCHTUNGSOPTIK UND PROJEKTIONSBELICHTUNGSANLAGE FÜR DIE MIKROLITHOGRAPHIE
    • 照明的光学元件和投射曝光系统,微光刻
    • WO2008071305A1
    • 2008-06-19
    • PCT/EP2007/010234
    • 2007-11-24
    • CARL ZEISS SMT AGENDRES, MartinOSSMANN, JensSTÜTZLE, Ralf
    • ENDRES, MartinOSSMANN, JensSTÜTZLE, Ralf
    • G03F7/20
    • G03F7/70191G02B27/0905G02B27/0977
    • Eine Projektionsbelichtungsanlage (1) für die Mikrolithographie hat ein Beleuchtungssystem (2) mit einer EUV-Lichtquelle (3) und einer Beleuchtungsoptik (6) zur Belichtung eines Objektfeldes in einer Objektebene (5). Zur Abbildung des Objektfeldes in ein Bildfeld in einer Bildebene (7) dient eine Projektionsoptik (6). Ein in einer Ebene der Beleuchtungsoptik (4), die mit einer Pupillenebene der Projektionsoptik (6) zusammenfällt oder zu dieser optisch konjugiert ist, angeordneter Pupillenfacettenspiegel (15) hat eine Mehrzahl von mit Beleuchtungslicht (8) beaufschlagbaren Einzelfacetten. Eine Korrekturblende (17) ist in oder benachbart zu einer Pupillenebene der Projektionsoptik (6) oder in einer hierzu konjugierten Ebene angeordnet. Die Korrekturblende (17) deckt die Ausleuchtung der Eintrittspupille der Projektionsoptik derart ab, dass zumindest einige den Einzelfacetten des Pupillenfacettenspiegels (15) zugeordnete Quellbilder in der Eintrittspupille der Projektionsoptik (6) von ein und demselben Blendenrand teilweise abgeschattet werden. Die Form des Blendenrandes ist zur teilweisen Abschattung der den Pupillenfacetten zugeordneten Quellbildern in der Eintrittspupille der Projektionsoptik zur Korrektur der Telezentrie und der Elliptizität der Beleuchtung vorgegeben. Beim Betrieb der Projektionsbelichtungsanlage (1) kann eine erste Beleuchtungsgeometrie (21) gegen eine zweite Beleuchtungsgeometrie (22, 22', 22") ausgewechselt werden. In diesem Fall wird die Korrekturblende (17) gegen eine Austausch-Blende (17) ausgetauscht, deren Blendenrand entsprechend angepasst an das Austausch-Beleuchtungsmodul (22, 22', 22") zur Korrektur der Telezentrie und Elliptizität der Beleuchtung mit dem zweiten Beleuchtungsmodul angepasst ist.
    • 对于具有(2)与EUV光源(3)和照明光学器件(6),用于在物平面(5)将物体曝光场的照明系统微光刻的投射曝光设备(1)。 一个投影光学装置(6)被用于在图像平面(7)的物场成像到像场。 甲在照明光学部件的一个面(4),其与投影光学装置(6)或光学共轭此的光瞳平面一致,设置光瞳分面镜(15)具有多个通过照明光(8)单独的面采取行动。 校正隔膜(17)被布置在或邻近于所述投影光学系统的光瞳平面(6)或在与其结合的平面。 校正隔膜(17)覆盖所述投影光学系统的入射光瞳的距离这样的方式使得至少一些与所述源图像中一个的投影光学装置(6),并且在同一隔板边缘的入射光瞳相关联的光瞳分面镜(15)的单个面的被部分遮挡的照明。 所述孔边缘的形状是考虑到在投影光学系统的入射光瞳相关联的源的图像来校正远心性和照明的椭圆率的光瞳面的部分遮蔽。 在投射曝光系统(1),第一照明几何形状(21)相对于第二照明几何形状(22,22”,22“)的操作,以被取代。在这种情况下,校正隔膜(17)对一个交换孔(17)被置换,则 隔膜边缘相应地适合于发光模块(22,22”,22“)适于照明的远心性和椭圆率校正到第二照明模块的交换。
    • 5. 发明申请
    • ILLUMINATION OPTICAL SYSTEM FOR PROJECTION LITHOGRAPHY
    • 用于投影光刻的照明光学系统
    • WO2012076454A1
    • 2012-06-14
    • PCT/EP2011/071714
    • 2011-12-05
    • CARL ZEISS SMT GMBHOSSMANN, JensENDRES, MartinSTÜTZLE, Ralf
    • OSSMANN, JensENDRES, MartinSTÜTZLE, Ralf
    • G03F7/20
    • G03F7/70141G03F7/70058
    • An illumination optical system for projection lithography has an optical assembly for guiding illumination light to an object field (19) to be illuminated in an object plane (17). The illumination optical system divides a bundle of the illumination light into a plurality of part bundles, which are allocated to various illumination directions of the object field illumination. The illumination optical system is configured in such a way that at least some of the part bundles are superimposed on one another in a first superimposition plane (31) according to a first superimposition specification and in a second superimposition plane (16), which is spaced apart from the first superimposition plane (31), according to a second superimposition specification. The result is an illumination optical system, in which an influencing and/or a monitoring of an illumination intensity distribution over the object field is made possible, as far as possible without influencing an illumination angle distribution.
    • 用于投影光刻的照明光学系统具有用于将照明光引导到在物平面(17)中被照明的物场(19)的光学组件。 照明光学系统将一束照明光分成分配给物场照明的各种照明方向的多个部分束。 照明光学系统被配置成使得至少一些部分束根据第一叠加指示在第一叠加平面(31)中彼此重叠,并且在第二叠加平面(16)中被间隔开 除了第一叠加平面(31)之外,根据第二重叠规格。 结果是在不影响照明角度分布的情况下尽可能地使对物场的照明强度分布的影响和/或监视成为可能的照明光学系统。
    • 7. 发明公开
    • BELEUCHTUNGSOPTIK UND PROJEKTIONSBELICHTUNGSANLAGE FÜR DIE MIKROLITHOGRAPHIE
    • 投射曝光系统,微光刻
    • EP2100190A1
    • 2009-09-16
    • EP07846805.5
    • 2007-11-24
    • Carl Zeiss SMT AG
    • ENDRES, MartinOSSMANN, JensSTÜTZLE, Ralf
    • G03F7/20
    • G03F7/70191G02B27/0905G02B27/0977
    • A projection exposure apparatus (1) for microlithography comprises an illumination system (2) having an EUV light source (3) and an illuminating optical unit (6) for illuminating an object field in an object plane (5). A projection optical unit (6) serves the imaging of the object field in an image plane (7). An aperture diaphragm beveled mirror (15) disposed in a plane of the illumination optical unit (4), the plane coinciding with an aperture diaphragm plane of the projection optical unit (6) or optically conjugated thereto, comprises a plurality of individual bevels to which illumination light (8) can be applied. A correction screen (17) is disposed in or adjacent to an aperture diaphragm plane of the projection optical unit (6), or in a plane conjugated thereto. The correction screen (17) covers the illumination of the entry aperture diaphragm of the projection optical unit such that at least some of the source images associated with the individual bevels of the aperture diaphragm beveled mirror (15) in the entry aperture diaphragm of the projection optical unit (6) are partially shadowed by one and the same screen edge. The shape of the screen edge is predetermined for the partial shadowing of the source images associated with the aperture diaphragm bevels in the entry aperture diaphragm of the projection optical unit for correcting the telecentricity and the ellipticity of the illumination. During the operation of the projection exposure apparatus (1), a first illumination geometry (21) can be exchanged for a second illumination geometry (22, 22', 22'). In this case, the correction screen (17) is exchanged for a replacement screen (17), the screen edge of which is correspondingly adjusted to the replacement illumination module (22, 22', 22') for the correction of the telecentricity and ellipticity of the illumination with the second illumination module.
    • 8. 发明公开
    • ILLUMINATION OPTICS FOR MICROLITHOGRAPHY
    • 照明光学部件的微型光刻
    • EP2240830A1
    • 2010-10-20
    • EP08859710.9
    • 2008-11-20
    • Carl Zeiss SMT AG
    • ENDRES, MartinSTÜTZLE, RalfOSSMANN, Jens
    • G03F7/20
    • G03F7/702G03F7/70075G03F7/70083G03F7/70191
    • An illumination optics for microlithography comprises an optical assembly for guiding illumination light to an object field (19) to be illuminated in an object plane. According to a first aspect of the invention, the illumination optics (26) divides an illumination light radiation bundle (3) into a plurality of radiation sub-bundles (28 to 30) which are assigned to different illumination angles of the object field illumination. The illumination optics (26) is configured in such a way that at least some of the radiation sub-bundles (28 to 30) are superimposed in a superposition plane (16) which is spaced from the object plane and which is not imaged into the object plane in which superposition takes place. This superposition is such that edges (32) of the superimposed radiation sub-bundles (28 to 30) coincide at least partially. According to another aspect of the invention, a field intensity setting device (24) comprises a plurality of adjacent individual diaphragms (27) which at least attenuate illumination light (3) when exposed thereto. These individual diaphragms (27) are insertable into an illumination light radiation bundle (3) in a direction parallel to an object displacement direction (y). All individual diaphragms (27) of the field intensity setting device (24) are insertable into the illumination light radiation bundle (3) from one and the same side.
    • 9. 发明申请
    • ILLUMINATION OPTICAL UNIT
    • 照明光学单元
    • WO2012159880A1
    • 2012-11-29
    • PCT/EP2012/058484
    • 2012-05-09
    • CARL ZEISS SMT GMBHSTÜTZLE, RalfBIELING, StigSTICKEL, Franz-Josef
    • STÜTZLE, RalfBIELING, StigSTICKEL, Franz-Josef
    • G03F7/20
    • G03F7/70116G03F7/70075
    • The invention relates to an illumination optical unit for EUV microlithography comprising a first optical element having a plurality of first reflective facet elements. Furthermore, the illumination optical unit comprises a second optical element (421) having a plurality of second reflective facet elements (423), wherein the plurality of first reflective facet elements comprises at least 75% of all the reflective facet elements of the first optical element. In this case, each first reflective facet element of the plurality of first reflective facet elements is embodied in such a way that, during the operation of the illumination optical unit, it generates an illuminated region at the location of an assigned second facet element of the plurality of second reflective facet elements. The second reflective facet elements (423) each have a reflective surface and the illuminated regions are in each case smaller than the reflective surface of the assigned second reflective facet element (423). In addition, all of said illuminated regions lie within a maximum of six continuous pairwise disjoint zones (459). Furthermore, there is a circle (457) having a minimum diameter which encloses all of said zones (459), wherein the first and/or second reflective facet elements are embodied in such a way that the ratio of the area content of the circle (457) to the sum of the area contents of the zones (459) is greater than 2.5, in particular greater than 4.
    • 本发明涉及一种用于EUV微光刻的照明光学单元,其包括具有多个第一反射小面元件的第一光学元件。 此外,照明光学单元包括具有多个第二反射小面元件(423)的第二光学元件(421),其中多个第一反射小面元件包括第一光学元件的所有反射小面元件的至少75% 。 在这种情况下,多个第一反射小面元件中的每个第一反射小面元件被实施为使得在照明光学单元的操作期间,其在所分配的第二小面元件的位置处产生照明区域 多个第二反射小面元件。 第二反射小面元件(423)各自具有反射表面,并且所述照明区域在每种情况下都小于所分配的第二反射小面元件(423)的反射表面。 另外,所有所述照明区域都在最多六个连续成对的不相交区域内(459)。 此外,存在具有包围所有所述区域(459)的最小直径的圆(457),其中第一和/或第二反射小面元件以如下方式实施:圆的面积含量 457)与区域(459)的面积内容之和大于2.5,特别大于4。