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    • 1. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS COMPRISING AN ILLUMINATION OPTICS OF THIS TYPE
    • 用于EUV微结构和照明系统的照明光学和包含这种类型的照明光学的投影曝光装置
    • WO2009132756A1
    • 2009-11-05
    • PCT/EP2009/002584
    • 2009-04-08
    • CARL ZEISS SMT AGFIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • FIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • G03F7/20
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography serves for guiding an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension (x) and a shorter field dimension (y), the ratio being considerably greater than 1. A field facet mirror (13) has a plurality of field facets (19) for setting defined illumination conditions in the object field. A following optics downstream of the field facet mirror (13) serves for transmitting the illumination light into the object field (5). The following optics comprises a pupil facet mirror (14) with a plurality of pupil facets (27). The field facets (19) are in each case individually allocated to the pupil facets (27) so that portions of the illumination light bundle (10) impinging upon in each case one of the field facets (19) are guided on to the object field (5) via the associated pupil facet (27). The field facet mirror (13) not only comprises a plurality of basic illumination field facets (19 G ) which provide a basic illumination of the object field (5) via associated basic illumination pupil facets (27 G ) but also a plurality of correction illumination field facets (19 K ) which provide for a correction of the illumination of the object field (5) via associated correction illumination pupil facets (27 K ). The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件用于将照明光束从辐射源引导到物场,其具有在较长场尺寸(x)和较短场尺寸(y)之间的延伸比,该比率远大于1。 场面反射镜(13)具有多个场面(19),用于在对象场中设定定义的照明条件。 场面反射镜(13)下游的跟随光学器件用于将照明光发射到物场(5)中。 以下光学器件包括具有多个光瞳面(27)的光瞳小面镜(14)。 场分面(19)在每种情况下分别被分配给光瞳面(27),使得照射光束(10)中的每一个场景面(19)中的一个照射的部分被引导到物场 (5)通过相关联的光瞳面(27)。 场面反射镜(13)不仅包括通过相关联的基本照明光瞳(27G)提供对象场(5)的基本照明的多个基本照明场面(19G),而且还包括多个校正照明场面 (19K),其经由相关联的校正照明光瞳面(27K)提供对物场(5)的照明的校正。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。