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1. 发明授权

US5073892A Semiconductor laser device 失效
公开(公告)号：US5073892A
公开(公告)日：1991-12-17
申请号：US534441
申请日：1990-06-07
申请人： Kazuhisa Uomi , Tsukuru Ohtoshi , Tomonobu Tsuchiya , Shinji Sasaki , Naoki Chinone
发明人： Kazuhisa Uomi , Tsukuru Ohtoshi , Tomonobu Tsuchiya , Shinji Sasaki , Naoki Chinone
IPC分类号： H01S5/062 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/06203 , H01S5/34 , H01S5/3086 , H01S5/309 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A semiconductor laser device of the field modulation type includes a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adopted as the structure in which the threshold carrier density is reduced.

2. 发明授权

US4881235A Semiconductor laser having a multiple quantum well structure doped with impurities 失效
标题翻译：具有掺杂有杂质的多量子阱结构的半导体激光器
公开(公告)号：US4881235A
公开(公告)日：1989-11-14
申请号：US41410
申请日：1987-04-23
申请人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
发明人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
IPC分类号： H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/227 , H01S5/34 , H01S5/2275 , H01S5/309 , H01S5/3407 , Y10S372/704
摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.
摘要翻译：在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长，在阻挡层中的密度比井层中的密度高。此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

3. 发明授权

US4835578A Semiconductor device having a quantum wire and a method of producing the same 失效
标题翻译：具有量子线的半导体装置及其制造方法
公开(公告)号：US4835578A
公开(公告)日：1989-05-30
申请号：US139791
申请日：1987-12-30
申请人： Tsukuru Ohtoshi , Kazuhisa Uomi , Tadashi Fukuzawa , Naoki Chinone
发明人： Tsukuru Ohtoshi , Kazuhisa Uomi , Tadashi Fukuzawa , Naoki Chinone
IPC分类号： H01L27/15 , B82Y10/00 , B82Y20/00 , H01L21/335 , H01L29/06 , H01L29/15 , H01L29/205 , H01L29/775 , H01L29/80 , H01S5/00 , H01S5/34
CPC分类号： H01L33/24 , B82Y10/00 , B82Y20/00 , H01L29/151 , H01L29/205 , H01L29/66469 , H01L29/775 , H01L33/06 , H01S5/341
摘要： A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a second superlattice layer that covers that exposed side walls of said first superlattice layer. A disordered region is formed in the vicinity of the first semiconductor layer of the second superlattice layer in order to realize quantum wires with the conventional manufacturing process. This makes it possible to easily fabricate a laser device, a light-emitting diode and a transistor having quantum wires to enhance their performance.
摘要翻译：半导体器件包括由含有杂质的第一半导体层和含有低浓度杂质的第二半导体层构成的第一超晶格层，所述第一超晶格层形成在半导体衬底上; 以及覆盖所述第一超晶格层的暴露侧壁的第二超晶格层。在第二超晶格层的第一半导体层附近形成无序区域，以通过常规制造工艺实现量子线。这使得可以容易地制造激光器件，发光二极管和具有量子线的晶体管以增强它们的性能。

4. 发明授权

US4821275A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US4821275A
公开(公告)日：1989-04-11
申请号：US140755
申请日：1988-01-04
申请人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
发明人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/2234
摘要： A stripe groove is formed on a semiconductor substrate and buried by lamination of multiple semiconductor layers, and a channel being lower than the substrate surface is formed outside the groove near at least one mirror edge, such that a laser diode with decreased astigmatism can be produced.
摘要翻译：在半导体基板上形成条纹槽，通过层叠多个半导体层而被掩埋，并且在至少一个反射镜边缘附近形成低于基板表面的沟道，从而可以产生具有减小的散光的激光二极管。

5. 发明授权

US4630279A Buried heterojunction laser 失效
标题翻译：埋入异质结激光
公开(公告)号：US4630279A
公开(公告)日：1986-12-16
申请号：US462908
申请日：1983-02-01
申请人： Takashi Kajimura , Takao Kuroda , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki
发明人： Takashi Kajimura , Takao Kuroda , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed herein is a semiconductor laser device including at least an optical confinement region having at least first, second and third semiconductor layers disposed on a semiconductor substrate, wherein the first and third semiconductor layers have refractive indices greater than the refractive index of the second semiconductor layer but have forebidden band gap smaller than that of the second semiconductor layer and the conductivity types of the first and third semiconductor layers are opposite to each other; the second semiconductor layer has a smooth change of its thickness in two directions parallel to a junction surface of the optical confinement region; and a difference exists in the refractive indices of the first and third semiconductor layers.
摘要翻译：本文公开了一种半导体激光器件，其至少包括具有至少设置在半导体衬底上的第一，第二和第三半导体层的光限制区域，其中第一和第三半导体层的折射率大于第二半导体层的折射率但是具有比第二半导体层小的带隙，并且第一和第三半导体层的导电类型彼此相反; 所述第二半导体层在与所述光限制区域的接合面平行的两个方向上具有平滑的厚度变化; 并且第一和第三半导体层的折射率存在差异。

6. 发明授权

US4602371A High output semiconductor laser device utilizing a mesa-stripe optical confinement region 失效
标题翻译：利用台面条状光限制区域的高输出半导体激光器件
公开(公告)号：US4602371A
公开(公告)日：1986-07-22
申请号：US571578
申请日：1984-01-17
申请人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
发明人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , H01S5/3213
摘要： A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.
摘要翻译：半导体激光装置设置有由第一，第二，第三和第四半导体层构成的光限制区域，该第一，第二，第三和第四半导体层依次相互接触地设置在预定半导体衬底的上部。第一和第四半导体层的折射率小于第二和第三半导体层，并且第三半导体层的折射率比第二半导体层大。另一方面，第二和第四半导体层的禁带宽度大于第三半导体层。至少第一和第四半导体层的导电类型彼此相反。除此之外，光限制区域形成为台面条状，并且基本上平行于激光束的行进方向的该台面条的两个侧壁都嵌有第五半导体层。此外，第二半导体层在与激光束的行进方向垂直的部分的宽度以及与光限制区域内的结的平行方向的宽度大于第三半导体层的宽度。因此，通过这种结构，通过该半导体激光器件确保了大的输出。

7. 发明授权

US4599729A Semiconductor laser device having facets provided with dielectric layers 失效
标题翻译：半导体激光器件具有设有电介质层的刻面
公开(公告)号：US4599729A
公开(公告)日：1986-07-08
申请号：US578530
申请日：1984-02-09
申请人： Yoshimitsu Sasaki , Takashi Kajimura , Naoki Chinone , Michiharu Nakamura
发明人： Yoshimitsu Sasaki , Takashi Kajimura , Naoki Chinone , Michiharu Nakamura
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028
摘要： In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.
摘要翻译：在这种类型的半导体激光器件中，其包括在谐振器的两个面的至少一个面上的第一电介质层和第二电介质层的至少一个层叠体，并且其中第一电介质层的折射率低于第一电介质层的折射率的第二介电层的改进，其中第二介电层由其基本组成元素上含有硅和氢的非晶材料组成。

8. 发明授权

US4506366A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4506366A
公开(公告)日：1985-03-19
申请号：US393313
申请日：1982-06-29
申请人： Naoki Chinone , Yasutoshi Kashiwada , Shigeo Yamashita , Kunio Aiki
发明人： Naoki Chinone , Yasutoshi Kashiwada , Shigeo Yamashita , Kunio Aiki
IPC分类号： H01S5/00 , H01S5/16 , H01S5/22 , H01S5/40 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2203 , H01S5/4043
摘要： A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer. The device of the present invention is effective for increasing the output of semiconductor laser devices.
摘要翻译：一种半导体激光装置，其特征在于，在规定的半导体基板上至少具有第一，第二，第三，第四和第四半导体层的层叠区域，其中，所述第三半导体层的折射率小于所述第二半导体层的折射率; 第一和第四半导体层的折射率小于第二和第三半导体层的折射率，并且具有与第二和第三半导体层相反的导电类型; 第一和第三半导体层的禁带宽大于第二半导体层的禁带宽; 并且至少第二和第三半导体层被弯曲，使得在激光发射面附近在第二半导体层内部产生的激光在第三半导体层中产生光耦合，并从第三半导体层的晶面发射半导体层。本发明的器件对于增加半导体激光器件的输出是有效的。

9. 发明授权

US4161701A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4161701A
公开(公告)日：1979-07-17
申请号：US780789
申请日：1977-03-24
申请人： Yutaka Takeda , Satoshi Nakamura , Naoki Chinone , Hisao Nakashima , Kazuhiro Kurata
发明人： Yutaka Takeda , Satoshi Nakamura , Naoki Chinone , Hisao Nakashima , Kazuhiro Kurata
IPC分类号： H01L23/48 , H01S5/00 , H01S5/024 , H01S5/042 , H01S5/20 , H01S5/22 , H01S3/19
CPC分类号： H01S5/20 , H01S5/024 , H01L33/642 , H01S5/0224 , H01S5/02272 , H01S5/2059
摘要： A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.
摘要翻译：形成用于支撑半导体激光器的二极管芯片的半导体层高于包含导电区域的半导体层，由此安装二极管芯片的作用在二极管芯片上的应力减轻以防止性能下降和寿命缩短的半导体激光器。

10. 发明授权

US5042049A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5042049A
公开(公告)日：1991-08-20
申请号：US461253
申请日：1990-01-05
申请人： Tsukuru Ohtoshi , Shinji Sakano , Kazuhisa Uomi , Naoki Chinone
发明人： Tsukuru Ohtoshi , Shinji Sakano , Kazuhisa Uomi , Naoki Chinone
IPC分类号： G02F1/025 , G02B6/122 , G02F1/015 , G02F1/313 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14 , H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , G02B6/122 , H01S5/06258 , H01S5/34 , H01S5/026 , H01S5/0265 , H01S5/06256 , H01S5/1025 , H01S5/12 , H01S5/14 , H01S5/227 , H01S5/2275 , H01S5/3403 , H01S5/3404
摘要： A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a stained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.

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