会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明授权
    • Field effect transistor and manufacturing method thereof
    • 场效应晶体管及其制造方法
    • US07772622B2
    • 2010-08-10
    • US11733794
    • 2007-04-11
    • Masaaki FujimoriTomihiro HashizumeMasahiko Ando
    • Masaaki FujimoriTomihiro HashizumeMasahiko Ando
    • H01L29/80H01L21/84
    • H01L51/0012H01L51/0003H01L51/0545H01L51/0558H01L51/102
    • A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.
    • 一种场效应晶体管的制造方法,其中,在基板上设置图案化栅电极,并且在基板上设置栅极绝缘体,并且栅电极,源电极和漏极彼此间隔开 栅极绝缘体,设置作为源电极和漏电极之间的沟道的区域,该区域与源电极和漏电极中的任一个之间的边界是线性的,该区域与漏极之一之间的边界 电极和源电极是非线性的,边界具有连续或不连续的形状,并且边界部分具有多个凹部,该区域的表面具有亲水性,并且该区域的周边区域准备具有水 - 将排斥性和包含半导体有机分子的溶液供给到该区域,并将溶液干燥。