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1. 发明授权

US4785340A Semiconductor device having doping multilayer structure 失效
标题翻译：具有掺杂多层结构的半导体器件
公开(公告)号：US4785340A
公开(公告)日：1988-11-15
申请号：US839349
申请日：1986-03-13
申请人： Kiyokazu Nakagawa , Akitoshi Ishizaka , Yasuhiro Shiraki , Yoshimasa Murayama
发明人： Kiyokazu Nakagawa , Akitoshi Ishizaka , Yasuhiro Shiraki , Yoshimasa Murayama
IPC分类号： H01L21/203 , H01L21/28 , H01L21/331 , H01L21/335 , H01L29/10 , H01L29/15 , H01L29/732 , H01L29/72 , H01L27/12 , H01L29/161
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/28 , H01L29/1004 , H01L29/15 , H01L29/66287 , H01L29/66424 , H01L29/732
摘要： A semiconductor device includes a multilayer semiconductor structure comprising alternately p- (or n-) type heavily doped semiconductor layers and n- (or p-) type lightly doped semiconductor layers. Holes (or electrons) are confined within a narrow layer in a fashion like a two-dimensional gas, whereby high mobility is realized notwithstanding of high carrier concentration. Electrical conductivity of the multilayer semiconductor structure can be made higher than that of a bulk semiconductor. Very high conductivity can be realized by forming each layer in a thickness within a range of 10 .ANG. to 1000 .ANG. and preferably 50 .ANG. to 500 .ANG.. Ratio in impurity concentration of the heavily doped layer to the low doped layer is not smaller than one order of magnitude.
摘要翻译：半导体器件包括交替的p-（或n-）型重掺杂半导体层和n-（或p-）型轻掺杂半导体层的多层半导体结构。孔（或电子）以类似二维气体的方式被限制在窄层内，由此即使高载流子浓度也能实现高迁移率。可以使多层半导体结构的导电性高于体半导体。可以通过将厚度范围在10安培至1000安培范围内，优选为50安培至500安培的厚度来形成非常高的导电性。重掺杂层的杂质浓度与低掺杂层的比例不小于一个数量级。

2. 发明授权

US4433202A Thin film solar cell 失效
标题翻译：薄膜太阳能电池
公开(公告)号：US4433202A
公开(公告)日：1984-02-21
申请号：US362115
申请日：1982-03-26
申请人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
发明人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/03921 , Y02E10/546
摘要： A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element.The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.
摘要翻译：一种在基板上形成的薄膜太阳能电池，其至少包括第一和第二电极，其中至少一个能够通过光，插入在所述第一和第二电极之间的硅膜，以及形成在硅膜中的至少一个结用于在电池暴露于光时分离电子和正空穴，其中所述硅膜包括由多晶相和非晶相组成的混合相，并且包括至少约50体积％的纤维状晶粒，每个所述晶粒具有约1μm的最大底部直径和约50nm的最小高度，并且其晶界用一价元素封端。太阳能电池具有与单晶太阳能电池相当的高的光电转换效率，并且可以以低成本生产。

3. 发明授权

US5047111A Method of forming a metal silicide film 失效
标题翻译：形成金属硅化物膜的方法
公开(公告)号：US5047111A
公开(公告)日：1991-09-10
申请号：US110580
申请日：1987-10-16
申请人： Akitoshi Ishizaka , Yasuhiro Shiraki , Takashi Ohshima
发明人： Akitoshi Ishizaka , Yasuhiro Shiraki , Takashi Ohshima
IPC分类号： C30B1/02 , H01L21/285
CPC分类号： H01L21/28518 , C30B1/023 , C30B29/10
摘要： Films of desired metal, e.g., Ni or Co, and of Si are laminated alternatelyn a single crystal silicon substrate to form a multi-layered structure, and thereafter the substrate is heated to grow an epitaxial NiSi.sub.2 or CoSi.sub.2 film in solid phase with less diffusion of Ni or Co atoms into the silicon substrate. Each layer in the multi-layered structure has a thickness selected in the range of 30-300 A with the overall composition ratio Si/Ni (or Si/Co) in the range of 1.8-2.0. The lamination process is done at a substrate temperature which does not cause the laminated films to react with the substrate and does not cause the multi-layered structure to become polycrystalline, e.g. below 350.degree. C. for the formation of an NiSi.sub.2 film or below 450.degree. C. for the formation of a CoSi.sub.2 film. The solid phase epitaxy is achieved at a substrate heating temperature in a range of 350.degree.-750.degree. C. for the formation of an epitaxial NiSi.sub.2 film or 450.degree.-1000.degree. C. for the formation of a CoSi.sub.2 film.
摘要翻译：将期望的金属（例如Ni或Co）和Si的膜交替层叠在单晶硅衬底上以形成多层结构，然后将衬底加热以生长外延NiSi 2或CoSi 2膜，固相少 Ni或Co原子扩散到硅衬底中。多层结构中的每个层具有在30-300A范围内选择的厚度，Si / Ni（或Si / Co）的总组成比在1.8-2.0的范围内。层压方法是在不使层压膜与基板反应而不会使多层结构变得多晶的基板温度下进行的。低于350℃以形成NiSi2膜或低于450℃以形成CoSi 2膜。在350〜-750℃的衬底加热温度下实现固相外延，用于形成外延NiSi2膜或450-1000℃以形成CoSi 2膜。

4. 发明授权

US06818941B1 Thin film electron emitter, display device using the same and applied machine 有权
标题翻译：薄膜电子发射器，使用相同的显示装置和应用机器
公开(公告)号：US06818941B1
公开(公告)日：2004-11-16
申请号：US09979740
申请日：2001-11-28
申请人： Mutsumi Suzuki , Toshiaki Kusunoki , Masakazu Sagawa , Makoto Okai , Akitoshi Ishizaka
发明人： Mutsumi Suzuki , Toshiaki Kusunoki , Masakazu Sagawa , Makoto Okai , Akitoshi Ishizaka
IPC分类号： H01L31119
CPC分类号： B82Y10/00 , B82Y40/00 , H01J1/312 , H01J9/027 , H01J37/073 , H01J37/3174 , H01J37/3177 , H01J2237/06325
摘要： As the top electrode material of a thin-film electron emitter, a material having a bandgap wider than that of Si and electrical conductivity is used. In particular, a conductive oxide such as an SnO2 or ITO film and a wide-bandgap semiconductor such as GaN or SiC are employed. The electron energy loss in a top electrode through which hot electrons pass can be reduced so as to enhance the electron emission efficiency. A high emission current can be obtained in the case of the same diode current as a prior art. In addition, in the case of the same emission current density as a prior art, a small driving current is enough. A bus line and driving circuits can be simplified.
摘要翻译：作为薄膜电子发射体的顶部电极材料，使用具有比Si更宽的带隙和导电性的材料。特别地，使用诸如SnO 2或ITO膜的导电氧化物和诸如GaN或SiC的宽带隙半导体。可以减少热电子通过的顶部电极中的电子能量损失，以增强电子发射在与现有技术相同的二极管电流的情况下可以获得高发射电流。此外，在与现有技术相同的发射电流密度的情况下，小的驱动电流就足够了。可以简化总线和驱动电路。

5. 发明授权

US4984048A Semiconductor device with buried side contact 失效
标题翻译：半导体器件具有掩埋侧接触
公开(公告)号：US4984048A
公开(公告)日：1991-01-08
申请号：US216536
申请日：1988-07-08
申请人： Kazuhiko Sagara , Tokuo Kure , Eiichi Murakami , Tohru Nakamura , Masanobu Miyao , Masao Kondo , Akitoshi Ishizaka , Yoichi Tamaki
发明人： Kazuhiko Sagara , Tokuo Kure , Eiichi Murakami , Tohru Nakamura , Masanobu Miyao , Masao Kondo , Akitoshi Ishizaka , Yoichi Tamaki
IPC分类号： H01L21/74 , H01L21/763 , H01L29/06 , H01L29/417 , H01L29/732 , H01L29/737
CPC分类号： H01L29/0649 , H01L21/743 , H01L21/763 , H01L29/41716 , H01L29/7325 , H01L29/7327 , H01L29/7378
摘要： Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.
摘要翻译：设置在用于将多个双极晶体管彼此隔离的沟槽内的多晶硅电连接到双极晶体管之一的集电极。由于用于隔离的沟槽也可以用于引出集电极，因此所需的面积被最小化。因此，这种布置在增加集成密度方面是有效的。

6. 发明授权

US06570321B1 Thin-film electron source, process for manufacturing thin-film electron source, and display 有权
标题翻译：薄膜电子源，薄膜电子源制造工艺及显示
公开(公告)号：US06570321B1
公开(公告)日：2003-05-27
申请号：US10031380
申请日：2002-01-18
申请人： Toshiaki Kusunoki , Mutsumi Suzuki , Masakazu Sagawa , Makoto Okai , Akitoshi Ishizaka
发明人： Toshiaki Kusunoki , Mutsumi Suzuki , Masakazu Sagawa , Makoto Okai , Akitoshi Ishizaka
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/027 , H01J2329/00
摘要： A process for manufacturing a thin-film electron source including a lower electrode (11), an upper electrode, and an insulating layer sandwiched between the lower electrode (11) and the upper electrode. The process comprises a first step of forming an anodized film over the surface of the lower electrode (11) by an anodizing method, a second step of etching the surface side of the anodized film, and a third step of forming an anodized film again over the surface of the lower electrode (11) by an anodizing method to form said insulating layer. As a result, the film thickness of such an outer layer (26) of the insulating layer containing much impurity can be reduced to reduce the number of electron trapped.
摘要翻译：一种制造薄膜电子源的方法，包括夹在下电极（11）和上电极之间的下电极（11），上电极和绝缘层。该方法包括通过阳极氧化方法在下电极（11）的表面上形成阳极氧化膜的第一步骤，蚀刻阳极氧化膜的表面侧的第二步骤和再次形成阳极化膜的第三步骤通过阳极氧化方法使下电极（11）的表面形成所述绝缘层。结果，可以减少含有大量杂质的绝缘层的这种外层（26）的膜厚度，以减少被俘获的电子的数量。

7. 发明授权

US4885614A Semiconductor device with crystalline silicon-germanium-carbon alloy 失效
标题翻译：具有晶体硅 - 锗 - 碳合金的半导体器件
公开(公告)号：US4885614A
公开(公告)日：1989-12-05
申请号：US216522
申请日：1988-07-08
申请人： Seijiro Furukawa , Hiroyuki Etoh , Akitoshi Ishizaka , Toshikazu Shimada
发明人： Seijiro Furukawa , Hiroyuki Etoh , Akitoshi Ishizaka , Toshikazu Shimada
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/26 , H01L29/165 , H01L29/737 , H01L29/778 , H01L31/0312 , H01L31/105 , H01L31/18
CPC分类号： H01L31/1812 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L29/165 , H01L29/7378 , H01L29/7781 , H01L31/0312 , H01L31/105 , Y02E10/50
摘要： The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.
摘要翻译：本发明公开了一种半导体器件，其包括由单晶硅或硅 - 锗合金制成的半导体层和由其上形成的硅 - 锗 - 碳合金制成的半导体层，其中两层在其间形成异质结。在这种器件中，层之间不发生晶格失配，或者即使发生晶格失配，仅仅是微小的，所以硅 - 锗 - 碳合金层不会引起其中的失配位错的危险。

8. 发明申请

US20080243019A1 Respiratory function measuring equipment and storage medium 审中-公开
标题翻译：呼吸功能测量设备和储存介质
公开(公告)号：US20080243019A1
公开(公告)日：2008-10-02
申请号：US12002767
申请日：2007-12-19
申请人： Shuko Tsujimura , Hidetoshi Nakamura , Akitoshi Ishizaka , Isao Sato
发明人： Shuko Tsujimura , Hidetoshi Nakamura , Akitoshi Ishizaka , Isao Sato
IPC分类号： A61B5/08
CPC分类号： A61B5/08
摘要： A respiratory function measuring device comprises: a three-dimensional measuring unit that measures a chest movement and an abdomen movement of a breathing animal; a first measuring unit that measures a time T1 where a rate of volume decrease of the abdomen is maximized in an expiration; a second measuring unit that measures a time T2 where a rate of volume decrease of the chest is maximized in the expiration; and a respiratory time difference outputting unit that computes and outputs a value Tde corresponding to T2-T1. This allows measuring respiratory function to diagnose an obstructive pulmonary disease, a restrictive pulmonary disease, and the like in a natural state, for a subject of a breathing animal, even if the subject does not have a sense of self-awareness.
摘要翻译：呼吸功能测量装置包括：测量呼吸动物的胸部运动和腹部运动的三维测量单元; 第一测量单元，其测量在呼气期间腹部体积减少速率最大化的时间T 1; 第二测量单元，其测量在期满中胸部的体积减少率最大化的时间T 2; 以及呼吸时间差输出单元，其计算并输出与T 2 -T 1相对应的值Tde。即使受试者没有自我意识的感觉，也可以测量呼吸功能来诊断呼吸动物对象的自然状态下的阻塞性肺病，限制性肺部疾病等。

9. 发明申请

US20050032117A1 Method for assessment of cystic lung fibrosis 审中-公开
标题翻译：囊性肺纤维化评估方法
公开(公告)号：US20050032117A1
公开(公告)日：2005-02-10
申请号：US10777683
申请日：2004-02-13
申请人： Richard Moss , Akitoshi Ishizaka , Teruo Kirikae
发明人： Richard Moss , Akitoshi Ishizaka , Teruo Kirikae
IPC分类号： G01N33/53 , C07K16/18 , G01N33/50 , G01N33/68
CPC分类号： G01N33/6884 , G01N2800/12 , G01N2800/382
摘要： The invention provides a method for assessment of cystic lung fibrosis (CF) in terms of severity, acuteness, degree of progress, etc. of CF., with high accuracy, high sensitivity, convenience, rapidity, and low cost. The method includes the steps of measuring the level of CAP 18 in a biological sample, and correlating the measurement with CF.
摘要翻译：本发明提供了一种以高精度，高灵敏度，方便，快速，低成本在CF的严重程度，敏锐度，进展程度等方面评估囊性肺纤维化（CF）的方法。该方法包括以下步骤：测量生物样品中CAP18的水平，并将测量与CF相关联。

10. 发明授权

US4024567A Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes 失效
标题翻译：具有Al-Mn或Al-Mn-Si合金电极的半导体器件
公开(公告)号：US4024567A
公开(公告)日：1977-05-17
申请号：US692638
申请日：1976-06-04
申请人： Seiichi Iwata , Akitoshi Ishizaka , Hiroshi Yamamoto
发明人： Seiichi Iwata , Akitoshi Ishizaka , Hiroshi Yamamoto
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/532 , H01L23/48 , H01L29/40 , H01L29/46
CPC分类号： H01L23/53219 , H01L2924/0002 , Y10T428/12757
摘要： A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.
摘要翻译：半导体器件具有由含有大于1重量％且低于6重量％的Mn的Al合金制成的布线用导电层。半导体器件具有优异的耐腐蚀性，并具有高可靠性。

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