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    • 5. 发明申请
    • METHOD FOR CRYSTALLIZING A SILICON SUBSTRATE
    • 用于结晶硅基板的方法
    • US20140120704A1
    • 2014-05-01
    • US13890476
    • 2013-05-09
    • Sung-Ho KIMMin-Hwan CHOIMin-Ji BAEKSang-Kyung LEESang-Ho JEONJong-Moo HUH
    • Sung-Ho KIMMin-Hwan CHOIMin-Ji BAEKSang-Kyung LEESang-Ho JEONJong-Moo HUH
    • H01L21/02
    • H01L21/02686H01L21/02532H01L22/12H01L22/20
    • A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.
    • 一种硅衬底的结晶方法包括:制造结晶硅测试衬底,其通过在非晶硅测试衬底的各个区域上扫描具有不同能量密度的准分子激光退火光束而被结晶,使用光源照射结晶硅测试衬底的表面 ,并且在可见光波长范围内测量对应于结晶硅测试衬底的各个区域的反射率,提取结晶硅测试衬底的各个区域的平均反射率,其对应于各种颜色的波长范围,计算最佳能量密度(OPED )通过使用通过从基于蓝色的颜色的平均反射率减去红色颜色的平均反射率而获得的值,选择最佳能量密度,并使用最佳能量密度结晶非晶硅衬底而获得的值。
    • 7. 发明授权
    • Repair circuit and control method thereof
    • 修理电路及其控制方法
    • US08547762B2
    • 2013-10-01
    • US13190046
    • 2011-07-25
    • Sung Ho Kim
    • Sung Ho Kim
    • G11C7/00
    • G11C17/14G11C29/787
    • A semiconductor memory apparatus including a repair circuit may comprise: a fuse set block configured to store a repair address, compare the repair address with an input address, and generate a primary repair signal; and a redundancy control block configured to receive the primary repair signal, determine whether a repair cell in a repair memory designated by the primary repair signal is failed or not, and generate a secondary repair signal which repair the failed repair cell with another repair cell in the repair memory.
    • 包括修复电路的半导体存储装置可以包括:熔丝组块,被配置为存储修复地址,将修复地址与输入地址进行比较,并生成主修复信号; 以及冗余控制块,被配置为接收所述主修复信号,确定由所述主修复信号指定的修复存储器中的修复单元是否故障,并且生成辅助修复信号,所述修复信号用另一修复单元修复所述故障修复单元 修复记忆。
    • 10. 发明授权
    • Organic light emitting diode display device and method of fabricating the same
    • 有机发光二极管显示装置及其制造方法
    • US08415659B2
    • 2013-04-09
    • US12822838
    • 2010-06-24
    • Sung-Ho KimIl-Jeong LeeDo-Hyun KwonChoong-Youl ImHee-Seong JeongSu-Mi Lee
    • Sung-Ho KimIl-Jeong LeeDo-Hyun KwonChoong-Youl ImHee-Seong JeongSu-Mi Lee
    • H01L29/08H01L35/24H01L51/00
    • H01L51/5265H01L27/3244H01L27/3248H01L2251/558
    • An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate including an emission region and a non-emission region, a buffer layer arranged on the substrate, a semiconductor layer arranged in the non-emission region on the buffer layer, a gate insulating layer arranged on an entire surface of the substrate, a first electrode arranged in the emission region on the gate insulating layer, a gate electrode arranged in the non-emission region on the gate insulating layer, an interlayer insulating layer arranged on the entire surface of the substrate and partially exposing the first electrode, source and drain electrodes arranged on the interlayer insulating layer and electrically connected to the semiconductor layer and the first electrode, a protection layer arranged on the entire surface of the substrate and partially exposing the first electrode, an organic layer arranged on the first electrode and a second electrode arranged on the entire surface of the substrate.
    • 一种有机发光二极管(OLED)显示装置及其制造方法。 OLED显示装置包括:发光区域和非发光区域的衬底;布置在衬底上的缓冲层;布置在缓冲层上的非发射区域中的半导体层;布置在整个表面上的栅绝缘层 设置在所述栅极绝缘层上的发光区域中的第一电极,配置在所述栅极绝缘层上的非发光区域中的栅极电极,配置在所述基板的整个表面上的部分地露出所述基板的部分, 第一电极,源电极和漏电极,布置在层间绝缘层上并电连接到半导体层和第一电极,保护层布置在基板的整个表面上并部分地暴露第一电极;布置在第一电极上的有机层 电极和布置在基板的整个表面上的第二电极。