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    • 2. 发明授权
    • Method for crystallizing a silicon substrate
    • 硅衬底结晶方法
    • US09087697B2
    • 2015-07-21
    • US13890476
    • 2013-05-09
    • Sung-Ho KimMin-Hwan ChoiMin-Ji BaekSang-Kyung LeeSang-Ho JeonJong-Moo Huh
    • Sung-Ho KimMin-Hwan ChoiMin-Ji BaekSang-Kyung LeeSang-Ho JeonJong-Moo Huh
    • H01L21/02H01L21/66
    • H01L21/02686H01L21/02532H01L22/12H01L22/20
    • A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.
    • 一种硅衬底的结晶方法包括:制造结晶硅测试衬底,其通过在非晶硅测试衬底的各个区域上扫描具有不同能量密度的准分子激光退火光束而被结晶,使用光源照射结晶硅测试衬底的表面 ,并且在可见光波长范围内测量对应于结晶硅测试衬底的各个区域的反射率,提取结晶硅测试衬底的各个区域的平均反射率,其对应于各种颜色的波长范围,计算最佳能量密度(OPED )通过使用通过从基于蓝色的颜色的平均反射率减去红色颜色的平均反射率而获得的值,选择最佳能量密度,并使用最佳能量密度结晶非晶硅衬底而获得的值。
    • 9. 发明授权
    • Semiconductor device and level shifting circuit for the same
    • 半导体器件和电平移位电路相同
    • US08629696B2
    • 2014-01-14
    • US13334012
    • 2011-12-21
    • Sung-Ho Kim
    • Sung-Ho Kim
    • H03K3/00
    • H03K19/018521
    • A level shifting circuit includes an inverter inverting an input voltage of an input node and driving a first voltage of a first node, a first output driving unit driving an output voltage of an output node to a first level in response to the first voltage of the first node, a first connection unit electrically coupling the first node to a second node or electrically isolating the first node from the second node in response to the first voltage of the first node, an internal driving unit driving a second voltage of the second node to a second level in response to the input voltage of the input node and the output voltage of the output node, and a second output driving unit driving the output voltage of the output node to the second level in response to the second voltage of the second node.
    • 电平移位电路包括反相输入节点的输入电压并驱动第一节点的第一电压的逆变器,响应于第一电压的第一电压将输出节点的输出电压驱动到第一电平的第一输出驱动单元 第一节点,响应于第一节点的第一电压将第一节点电耦合到第二节点或将第一节点与第二节点电隔离的第一连接单元,驱动第二节点的第二电压的内部驱动单元 响应于输入节点的输入电压和输出节点的输出电压的第二电平;以及第二输出驱动单元,响应于第二节点的第二电压将输出节点的输出电压驱动到第二电平 。