专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09202933B2 Flash memory using fringing effects and electrostatic shielding 有权
标题翻译：闪存使用边缘效果和静电屏蔽
公开(公告)号：US09202933B2
公开(公告)日：2015-12-01
申请号：US13992298
申请日：2011-12-05
申请人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
发明人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
IPC分类号： H01L29/792 , H01L27/115 , H01L29/423 , H01L29/66
CPC分类号： H01L29/792 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.
摘要翻译：公开了一种使用边缘效应和静电屏蔽功能的闪存。相邻栅极堆叠之间的间隙由边缘效应控制，并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。因此，通过静电屏蔽使相邻栅极叠层之间的耦合最小化。

2. 发明申请

US20130256782A1 FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING 有权
标题翻译：闪光效应和静电屏蔽
公开(公告)号：US20130256782A1
公开(公告)日：2013-10-03
申请号：US13992298
申请日：2011-12-05
申请人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
发明人： Tae Whan Kim , Joo Hyung You , Sung Ho Kim
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.
摘要翻译：公开了一种使用边缘效应和静电屏蔽功能的闪存。相邻栅极堆叠之间的间隙由边缘效应控制，并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。因此，通过静电屏蔽使相邻栅极叠层之间的耦合最小化。

3. 发明授权

US08757841B2 Lighting device 有权
标题翻译：照明设备
公开(公告)号：US08757841B2
公开(公告)日：2014-06-24
申请号：US13287631
申请日：2011-11-02
申请人： Tae Young Choi , Won Jin Son , Dong Nyung Lim , Jung Ha Hwang , Seung Yeon Lee , Cheon Joo Kim , Sung Ho Kim
发明人： Tae Young Choi , Won Jin Son , Dong Nyung Lim , Jung Ha Hwang , Seung Yeon Lee , Cheon Joo Kim , Sung Ho Kim
IPC分类号： F21V3/00 , F21V29/00 , F21V23/00
CPC分类号： F21V29/74 , F21K9/23 , F21K9/232 , F21K9/238 , F21V3/00 , F21V19/0055 , F21V23/005 , F21V23/006 , F21V29/773 , F21V29/89 , F21Y2105/10 , F21Y2105/12 , F21Y2113/00 , F21Y2113/13 , F21Y2115/10
摘要： A lighting device may be provided that includes a heat sink which includes one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and includes a substrate and a plurality of light sources disposed on the substrate, wherein the substrate includes a hole and a plurality of via-holes; a power controller which includes an electrode pin electrically connected to the light emitting module through the via hole; and aninsulating inner case which receives the power controller therein and is disposed in the receiving recess of the heat sink, wherein the light sources include an lighting emitting diode.
摘要翻译：可以提供一种照明装置，其包括散热器，该散热器包括一个表面和一个接收凹部; 发光模块，其设置在所述散热器的一个表面上，并且包括基板和设置在所述基板上的多个光源，其中所述基板包括孔和多个通孔; 功率控制器，其包括通过所述通孔电连接到所述发光模块的电极引脚; 以及在内部接收功率控制器并且设置在散热器的接收凹部中的绝缘内壳体，其中光源包括发光二极管。

4. 发明授权

US08749302B2 Semiconductor integrated circuit apparatus having I/O signal line 有权
标题翻译：具有I / O信号线的半导体集成电路装置
公开(公告)号：US08749302B2
公开(公告)日：2014-06-10
申请号：US13602264
申请日：2012-09-03
申请人： Sung Ho Kim
发明人： Sung Ho Kim
IPC分类号： H01L25/00
CPC分类号： H01L23/535 , G11C11/4097 , G11C2207/005 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit apparatus includes: a plurality of column select signal lines extended in parallel to each other with a predetermined distance provided therebetween; a local I/O line arranged in a selected space among spaces formed between the respective column select signal lines; and an upper segment I/O line arranged to overlap the local I/O line and a local I/O line bar.
摘要翻译：一种半导体集成电路装置，包括：以彼此平行延伸的多个列选择信号线，其间设置有预定距离; 布置在形成在各个列选择信号线之间的空间之间的选定空间中的本地I / O线; 以及布置成与本地I / O线和本地I / O线条重叠的上段I / O线。

5. 发明申请

US20140034907A1 NANOWIRE SENSOR HAVING NANOWIRE OF NETWORK STRUCTURE 有权
标题翻译：具有网络结构纳米的纳米传感器
公开(公告)号：US20140034907A1
公开(公告)日：2014-02-06
申请号：US14111727
申请日：2012-03-19
申请人： Jeong Soo Lee , Yoon Ha Jeong , Tai Uk Rim , Chang Ki Baek , Sung Ho Kim , Ki Hyun Kim
发明人： Jeong Soo Lee , Yoon Ha Jeong , Tai Uk Rim , Chang Ki Baek , Sung Ho Kim , Ki Hyun Kim
IPC分类号： H01L29/775 , H01L29/66
CPC分类号： H01L29/775 , B82Y40/00 , G01N27/06 , G01N27/3278 , G01N33/48707 , H01L29/66477
摘要： A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside.
摘要翻译：具有网络结构中的纳米线的纳米线传感器包括：形成在衬底上的源极和漏极; 在源极和漏极之间形成的纳米线，并且具有重复相交图案的网络结构; 以及固定在纳米线上并与从外部导入的靶材料选择性反应的检测材料。

6. 发明授权

US08525181B2 Thin-film transistor array substrate, organic light-emitting display device comprising the thin-film transistor array substrate, and method of manufacturing the thin-film transistor array substrate 有权
标题翻译：薄膜晶体管阵列基板，包括该薄膜晶体管阵列基板的有机发光显示装置及其制造薄膜晶体管阵列基板的方法
公开(公告)号：US08525181B2
公开(公告)日：2013-09-03
申请号：US13340800
申请日：2011-12-30
申请人： Sung Ho Kim , Min-Chul Shin
发明人： Sung Ho Kim , Min-Chul Shin
IPC分类号： H01L27/14 , H01L21/00 , G02F1/1343
CPC分类号： H01L27/1255 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/326 , H01L27/3265 , H01L51/5265 , H01L2227/323
摘要： A thin-film transistor (TFT) array substrate includes an active layer on a substrate and a lower electrode of a capacitor on the same level as the active layer, a first insulation layer on the active layer and the lower electrode and having a first gap exposing an area of the lower electrode; a gate electrode of the TFT on the first insulation layer, and an upper electrode of the capacitor on the lower electrode and the first insulation layer, the upper electrode having a second gap that exposes the first gap and a portion of the first insulation layer; a second insulation layer disposed between the gate electrode and source electrode and drain electrodes, and not disposed on the upper electrode, in the first gap of the first insulation layer, or in the second gap of the lower electrode.
摘要翻译：薄膜晶体管（TFT）阵列基板包括基板上的有源层和与有源层相同电平的电容器的下电极，有源层和下电极上的第一绝缘层，并且具有第一间隙暴露下电极的区域; 在第一绝缘层上的TFT的栅电极和下电极上的电容器的上电极和第一绝缘层，上电极具有暴露第一间隙的第二间隙和第一绝缘层的一部分; 设置在栅电极与源电极和漏电极之间的第二绝缘层，并且不设置在上电极上，在第一绝缘层的第一间隙中或在下电极的第二间隙中。

7. 发明申请

US20120299478A1 AUTOMOTIVE HEADLAMP SYSTEM AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：汽车头灯系统及其控制方法
公开(公告)号：US20120299478A1
公开(公告)日：2012-11-29
申请号：US13478618
申请日：2012-05-23
申请人： Jong Ryoul Park , Sung Ho Kim
发明人： Jong Ryoul Park , Sung Ho Kim
IPC分类号： B60Q1/08
CPC分类号： B60Q1/143 , B60Q2300/054 , B60Q2300/056 , B60Q2300/42 , F21S41/663
摘要： Disclosed is an automotive headlamp system which can control an illumination pattern of headlamps by rotating a headlamp unit and/or adjusting the light intensity of a light source included in the headlamp unit based on the position of a front vehicle located ahead in a driving direction, and a method of controlling the automotive headlamp system. The automotive headlamp system includes an image capture unit capturing an image of an area ahead of a vehicle in a driving direction of the vehicle, a position determination unit determining a position of a front vehicle based on the captured image, a headlamp unit comprising an array of a plurality of light sources, and a control unit controlling an illumination pattern of the headlamp unit by rotating the headlamp unit and/or adjusting a light intensity of a light source based on the determined position of the front vehicle.
摘要翻译：公开了一种汽车前照灯系统，其可以基于前方车辆在行驶方向上的位置来旋转前照灯单元和/或调整包含在前照灯单元中的光源的光强度来控制前照灯的照明图案，以及控制汽车前照灯系统的方法。汽车前照灯系统包括：图像捕获单元，其在车辆的行驶方向上捕获车辆前方的区域的图像;基于拍摄图像确定前方车辆的位置的位置确定单元;包括阵列的前照灯单元以及控制单元，其通过基于前车辆的确定位置旋转前照灯单元和/或调整光源的光强度来控制前照灯单元的照明图案。

8. 外观设计

USD652545S1 Portion of a LED lamp 有权
标题翻译： LED灯的一部分
公开(公告)号：USD652545S1
公开(公告)日：2012-01-17
申请号：US29389997
申请日：2011-04-19
申请人： Jihoo Kim , Tae Young Choi , Dong Nyung Lim , Sung Ho Kim , Cheonjoo Kim
设计人： Jihoo Kim , Tae Young Choi , Dong Nyung Lim , Sung Ho Kim , Cheonjoo Kim

9. 外观设计

USD652542S1 LED lamp 有权
公开(公告)号：USD652542S1
公开(公告)日：2012-01-17
申请号：US29389988
申请日：2011-04-19
申请人： Jihoo Kim , Tae Young Choi , Dong Nyung Lim , Sung Ho Kim , Cheonjoo Kim
设计人： Jihoo Kim , Tae Young Choi , Dong Nyung Lim , Sung Ho Kim , Cheonjoo Kim

10. 外观设计

USD652539S1 LED lamp 有权
公开(公告)号：USD652539S1
公开(公告)日：2012-01-17
申请号：US29389984
申请日：2011-04-19
申请人： Jihoo Kim , Tae Young Choi , Dong Nyung Lim , Sung Ho Kim , Cheonjoo Kim
设计人： Jihoo Kim , Tae Young Choi , Dong Nyung Lim , Sung Ho Kim , Cheonjoo Kim

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式