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1. 发明授权

US08593380B2 Organic light emitting diode display and method of manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US08593380B2
公开(公告)日：2013-11-26
申请号：US11676767
申请日：2007-02-20
申请人： Jong-Moo Huh
发明人： Jong-Moo Huh
IPC分类号： G09G3/32
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1229 , H01L27/1237 , H01L27/3244 , H01L27/3276
摘要： An organic light emitting diode (“OLED”) display includes; a substrate, first and second signal lines which intersect each other and are disposed on the substrate, a switching control electrode connected to the first signal line, a switching input electrode connected to the second signal line, a switching output electrode disposed substantially opposite the switching input electrode with respect to the switching control electrode, a switching semiconductor which partially overlaps the switching input electrode and the switching output electrode, first and second driving control electrodes connected to the switching output electrode, a driving semiconductor disposed between the first and second driving control electrodes, a driving input electrode and a driving output electrode which partially overlap the driving semiconductor and are disposed substantially opposite each other with respect to the driving semiconductor, a first electrode connected to the driving output electrode, a second electrode which faces the first electrode, and a light emitting member disposed between the first electrode and the second electrode.
摘要翻译：有机发光二极管（“OLED”）显示器包括：基板，彼此相交并布置在基板上的基板，第一和第二信号线，连接到第一信号线的开关控制电极，连接到第二信号线的开关输入电极，与开关基本相对设置的开关输出电极与切换控制电极相对的输入电极，与切换输入电极和切换输出电极部分重叠的切换半导体，与切换输出电极连接的第一驱动控制电极和第二驱动控制电极，配置在第一驱动控制部和第二驱动控制部之间的驱动半导体电极，驱动输入电极和驱动输出电极，其部分地与驱动半导体重叠并且相对于驱动半导体基本相对地设置;连接到驱动输出电极的第一电极，面向第一电极的第二电极，和光设置在第一电极和第二电极之间。

2. 发明授权

US08507331B2 Method of adjusting gap between bumps in pixel region and method of manufacturing display device using the method 失效
标题翻译：使用该方法调整像素区域中的凸块之间的间隙的方法和使用该方法制造显示装置的方法
公开(公告)号：US08507331B2
公开(公告)日：2013-08-13
申请号：US13449068
申请日：2012-04-17
申请人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
发明人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
IPC分类号： H01L21/00
CPC分类号： H01L27/3258 , H01L27/1285 , H01L51/5209
摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.
摘要翻译：一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

3. 发明授权

US08232123B2 Organic light emitting diode display with improved on-current, and method for manufacturing the same 失效
标题翻译：具有改善的导通电流的有机发光二极管显示器及其制造方法
公开(公告)号：US08232123B2
公开(公告)日：2012-07-31
申请号：US12424639
申请日：2009-04-16
申请人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
发明人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
IPC分类号： H01L21/336
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要翻译：一种有机发光器件及其制造方法，包括在绝缘基板上彼此相交的第一信号线和第二信号线，连接到第一信号线和第二信号线的开关薄膜晶体管，驱动薄膜连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管（“LD”）。驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体，具有掺杂区域和非掺杂区域的结晶硅，设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层，以及在驱动半导体上相互相对的驱动输入电极和驱动输出电极，其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。

4. 发明授权

US08202758B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08202758B2
公开(公告)日：2012-06-19
申请号：US12817510
申请日：2010-06-17
申请人： Jong-Moo Huh , Seung-Kyu Park , Tae-Youn Kim
发明人： Jong-Moo Huh , Seung-Kyu Park , Tae-Youn Kim
IPC分类号： H01L51/40
CPC分类号： H01L27/124 , H01L29/66765
摘要： The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.
摘要翻译：本发明提供一种薄膜晶体管阵列面板，其包括基板，形成在基板上的栅极线，形成在栅极线上的多晶半导体，形成在多晶半导体上的数据线，包括第一电极，形成在多晶半导体上的第二电极和面对第一电极和连接到第二电极的像素电极。

5. 发明授权

US07864257B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07864257B2
公开(公告)日：2011-01-04
申请号：US12174522
申请日：2008-07-16
申请人： Jong-Moo Huh , Joon-Hoo Choi , Seung-Kyu Park
发明人： Jong-Moo Huh , Joon-Hoo Choi , Seung-Kyu Park
IPC分类号： G02F1/136 , H01L31/00
CPC分类号： H01L29/66757 , H01L29/41733 , H01L29/42384
摘要： A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.
摘要翻译：公开了薄膜晶体管和薄膜晶体管的制造方法。薄膜晶体管包括第一和第二欧姆接触层，激活层，绝缘层，形成在绝缘层上并通过第一接触孔连接到第一欧姆接触层的源电极，形成在绝缘层上的漏电极和通过第二接触孔连接到第二欧姆接触层，形成在源电极和漏电极之间的绝缘层上并与激活层重叠的栅极，以及形成在源电极，漏极和栅电极。

6. 发明申请

US20100255620A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100255620A1
公开(公告)日：2010-10-07
申请号：US12817510
申请日：2010-06-17
申请人： Jong-Moo HUH , Seung-Kyu PARK , Tae-Youn KIM
发明人： Jong-Moo HUH , Seung-Kyu PARK , Tae-Youn KIM
IPC分类号： H01L21/336
CPC分类号： H01L27/124 , H01L29/66765
摘要： The present invention provides a thin film transistor array panel which includes a substrate, gate lines formed on the substrate, polycrystalline semiconductors formed on the gate lines, data lines formed on the polycrystalline semiconductors and including first electrodes, second electrodes formed on the polycrystalline semiconductors and facing the first electrodes, and pixel electrodes connected to the second electrodes.
摘要翻译：本发明提供一种薄膜晶体管阵列面板，其包括基板，形成在基板上的栅极线，形成在栅极线上的多晶半导体，形成在多晶半导体上的数据线，包括第一电极，形成在多晶半导体上的第二电极和面对第一电极和连接到第二电极的像素电极。

7. 发明申请

US20100238147A1 METHOD OF DRIVING A TRANSISTOR, A DRIVING ELEMENT USING THE SAME, AND A DISPLAY PANEL AND A DISPLAY APPARATUS HAVING THE DRIVING ELEMENT 审中-公开
标题翻译：驱动晶体管的方法，使用该晶体管的驱动元件和显示面板以及具有驱动元件的显示装置
公开(公告)号：US20100238147A1
公开(公告)日：2010-09-23
申请号：US12796288
申请日：2010-06-08
申请人： JONG-MOO HUH , JOON-HOO CHOI , IN-SU JOO , BEOHM-ROCK CHOI
发明人： JONG-MOO HUH , JOON-HOO CHOI , IN-SU JOO , BEOHM-ROCK CHOI
IPC分类号： G09G3/30 , G06F3/038 , G09G3/20
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0823 , G09G2300/0852 , G09G2300/0861 , G09G2300/0866 , G09G2310/0254 , G09G2320/0233 , G09G2320/043
摘要： A method of driving a transistor, a driving element using the same, and a display panel and a display apparatus having the driving element are provided. The method for driving a transistor comprises: receiving a bias voltage at a first electrode of a driving transistor; outputting a first signal having a first polarity from a first electrode of a switching transistor to a capacitor and a control electrode of the driving transistor when a select line is activated for driving an organic display element; and outputting a second signal having a second polarity from the first electrode of the switching transistor to the capacitor and the control electrode of the driving transistor when the select line is activated for dissipating a charge in the driving transistor and for deactivating the organic display element.
摘要翻译：提供驱动晶体管的方法，使用其的驱动元件以及具有驱动元件的显示面板和显示装置。驱动晶体管的方法包括：在驱动晶体管的第一电极处接收偏置电压; 当选择线被激活用于驱动有机显示元件时，从开关晶体管的第一电极向电容器输出具有第一极性的第一信号和驱动晶体管的控制电极; 以及当所述选择线被激活以耗散所述驱动晶体管中的电荷并且使所述有机显示元件去激活时，从所述开关晶体管的所述第一电极向所述电容器和所述驱动晶体管的控制电极输出具有第二极性的第二信号。

8. 发明授权

US07768011B2 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
标题翻译：包括薄膜晶体管的电致发光器件和制造电致发光器件的方法
公开(公告)号：US07768011B2
公开(公告)日：2010-08-03
申请号：US12389058
申请日：2009-02-19
申请人： Joon-Hoo Choi , In-Su Joo , Beom-Rak Choi , Jong-Moo Huh
发明人： Joon-Hoo Choi , In-Su Joo , Beom-Rak Choi , Jong-Moo Huh
IPC分类号： H01L33/00
CPC分类号： H01L27/3244 , H01L27/3262
摘要： An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要翻译：一种电致发光器件，包括电连接到电致发光元件的电致发光元件和薄膜晶体管。薄膜晶体管包括形成在衬底上的栅电极，形成在栅电极上的绝缘层，以及形成在绝缘层上的第一半导体图案。在第一半导体层上形成蚀刻停止层。在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案，并且在蚀刻停止层的另一侧上形成第三半导体图案。在第二半导体图案上形成源电极，在第三半导体图案上形成漏电极。

9. 发明申请

US20090302325A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME 有权
标题翻译：薄膜晶体管基板，其制造方法及其显示装置
公开(公告)号：US20090302325A1
公开(公告)日：2009-12-10
申请号：US12405978
申请日：2009-03-17
申请人： Jong-Moo HUH , Joon-Hoo Choi
发明人： Jong-Moo HUH , Joon-Hoo Choi
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1251 , H01L27/12 , H01L27/1248 , H01L29/66757 , H01L29/66765
摘要： In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern.
摘要翻译：在薄膜晶体管基板中，薄膜晶体管的有源图案包括通过不同工艺步骤图案化的下半导体图案和上半导体图案。下半导体图案限定了薄膜晶体管的沟道区域，并且上半导体图案连接到下半导体图案的侧部并与源电极和漏电极接触。在对应于沟道区域的下半导体图案上形成蚀刻停止层，并且通过与下半导体图案相同的图案化工艺形成蚀刻停止层。此外，在上半导体图案上形成欧姆接触图案，并且通过与上半导体图案相同的图案化工艺形成欧姆接触图案。

10. 发明申请

US20090159887A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090159887A1
公开(公告)日：2009-06-25
申请号：US12174522
申请日：2008-07-16
申请人： Jong-Moo HUH , Joon-Hoo CHOI , Seung-Kyu PARK
发明人： Jong-Moo HUH , Joon-Hoo CHOI , Seung-Kyu PARK
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/66757 , H01L29/41733 , H01L29/42384
摘要： A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.
摘要翻译：公开了薄膜晶体管和薄膜晶体管的制造方法。薄膜晶体管包括第一和第二欧姆接触层，激活层，绝缘层，形成在绝缘层上并通过第一接触孔连接到第一欧姆接触层的源电极，形成在绝缘层上的漏电极和通过第二接触孔连接到第二欧姆接触层，形成在源电极和漏电极之间的绝缘层上并与激活层重叠的栅极，以及形成在源电极，漏极和栅电极。

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