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    • 5. 发明授权
    • Method to trap air at the silicon substrate for improving the quality factor of RF inductors in CMOS technology
    • 在硅基板上捕获空气的方法,以改善CMOS技术中RF电感器的品质因素
    • US06221727B1
    • 2001-04-24
    • US09385524
    • 1999-08-30
    • Lap ChanJohnny Kok Wai ChewCher Liang ChaChee Tee Chua
    • Lap ChanJohnny Kok Wai ChewCher Liang ChaChee Tee Chua
    • H01L2120
    • H01L28/10H01L21/764H01L27/08
    • A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacturing of integrated circuits is described. A field oxide region is formed in and on a semiconductor substrate and then removed whereby a well is left in the semiconductor substrate. A polish stop layer is deposited over the substrate and within the well. The polish stop layer is covered and the well filled with a spin-on-glass layer. The spin-on-glass layer is polished back to the polish stop layer. The said polish stop layer is removed. A first oxide layer is deposited overlying the spin-on-glass layer and the semiconductor substrate and is patterned using an inductor reticle whereby a plurality of openings are made through the first oxide layer to the spin-on-glass layer. All of the spin-on-glass layer within the well is removed through the plurality of openings. Thereafter, a second oxide layer is deposited overlying the first oxide layer and capping the plurality of openings thereby forming an air barrier within the well. A metal layer is deposited overlying the second oxide layer and patterned using the same inductor reticle to form the inductor in the fabrication of an integrated circuit device.
    • 描述了在制造集成电路中制造利用空气作为下层屏障的电感器的新方法。 在半导体衬底中形成场氧化物区域,然后去除,从而在半导体衬底中留下阱。 抛光停止层沉积在基底上并在孔内。 抛光停止层被覆盖并充满了旋涂玻璃层。 旋涂玻璃层被抛光回抛光停止层。 所述抛光停止层被去除。 沉积在旋涂玻璃层和半导体衬底上的第一氧化物层,并且使用电感器掩模版进行图案化,由此通过第一氧化物层到旋涂玻璃层制成多个开口。 孔内的所有旋涂玻璃层通过多个开口被去除。 此后,将第二氧化物层沉积在第一氧化物层上并覆盖多个开口,从而在该阱内形成空气屏障。 沉积在第二氧化物层上的金属层,并使用相同的电感器掩模版进行图案化以在集成电路器件的制造中形成电感器。
    • 6. 发明授权
    • Method of making spiral-type RF inductors having a high quality factor
(Q)
    • 制造具有高品质因数(Q)的螺旋型RF电感器的方法
    • US6140197A
    • 2000-10-31
    • US385525
    • 1999-08-30
    • Shau-Fu Sanford ChuKok Wai Johnny ChewChee Tee ChuaCher Liang Cha
    • Shau-Fu Sanford ChuKok Wai Johnny ChewChee Tee ChuaCher Liang Cha
    • H01L21/02H01L27/08H01L21/20
    • H01L28/10H01L27/08
    • A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacture of integrated circuits is described. A metal line is provided overlying a dielectric layer on a semiconductor substrate. An intermetal dielectric layer is deposited overlying the metal line and the dielectric layer. The intermetal dielectric layer is patterned whereby a plurality of openings are made through the intermetal dielectric layer to the semiconductor substrate. Thereafter, an oxide layer is deposited overlying the intermetal dielectric layer and capping the plurality of openings thereby forming air gaps within the intermetal dielectric layer. A metal plug is formed through the oxide layer and the intermetal dielectric layer to the metal line. A metal layer is deposited overlying the oxide layer and patterned to form an inductor wherein a portion of the inductor contacts the metal line through the metal plug to complete formation of an inductor utilizing air as an underlying barrier in the fabrication of an integrated circuit.
    • 描述了在制造集成电路中制造利用空气作为下层屏障的电感器的新方法。 提供了覆盖半导体衬底上的电介质层的金属线。 覆盖在金属线和电介质层上的金属间电介质层。 金属间电介质层被图案化,由此通过金属间电介质层制造多个开口到半导体衬底。 此后,将氧化物层沉积在金属间电介质层上并覆盖多个开口,从而在金属间电介质层内形成气隙。 通过氧化物层和金属间电介质层形成金属插塞到金属线。 将金属层沉积在氧化物层上并被图案化以形成电感器,其中电感器的一部分通过金属插塞接触金属线,以在集成电路的制造中利用空气作为潜在的阻挡层来形成电感器。