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1. 发明授权

US6140197A Method of making spiral-type RF inductors having a high quality factor (Q) 有权
标题翻译：制造具有高品质因数（Q）的螺旋型RF电感器的方法
公开(公告)号：US6140197A
公开(公告)日：2000-10-31
申请号：US385525
申请日：1999-08-30
申请人： Shau-Fu Sanford Chu , Kok Wai Johnny Chew , Chee Tee Chua , Cher Liang Cha
发明人： Shau-Fu Sanford Chu , Kok Wai Johnny Chew , Chee Tee Chua , Cher Liang Cha
IPC分类号： H01L21/02 , H01L27/08 , H01L21/20
CPC分类号： H01L28/10 , H01L27/08
摘要： A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacture of integrated circuits is described. A metal line is provided overlying a dielectric layer on a semiconductor substrate. An intermetal dielectric layer is deposited overlying the metal line and the dielectric layer. The intermetal dielectric layer is patterned whereby a plurality of openings are made through the intermetal dielectric layer to the semiconductor substrate. Thereafter, an oxide layer is deposited overlying the intermetal dielectric layer and capping the plurality of openings thereby forming air gaps within the intermetal dielectric layer. A metal plug is formed through the oxide layer and the intermetal dielectric layer to the metal line. A metal layer is deposited overlying the oxide layer and patterned to form an inductor wherein a portion of the inductor contacts the metal line through the metal plug to complete formation of an inductor utilizing air as an underlying barrier in the fabrication of an integrated circuit.
摘要翻译：描述了在制造集成电路中制造利用空气作为下层屏障的电感器的新方法。提供了覆盖半导体衬底上的电介质层的金属线。覆盖在金属线和电介质层上的金属间电介质层。金属间电介质层被图案化，由此通过金属间电介质层制造多个开口到半导体衬底。此后，将氧化物层沉积在金属间电介质层上并覆盖多个开口，从而在金属间电介质层内形成气隙。通过氧化物层和金属间电介质层形成金属插塞到金属线。将金属层沉积在氧化物层上并被图案化以形成电感器，其中电感器的一部分通过金属插塞接触金属线，以在集成电路的制造中利用空气作为潜在的阻挡层来形成电感器。

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