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1. 发明申请

WO2004001480A3 CATADIOPTRIC REDUCTION OBJECTIVE 审中-公开
标题翻译：折反射缩小透镜
公开(公告)号：WO2004001480A3
公开(公告)日：2004-05-13
申请号：PCT/EP0306680
申请日：2003-06-25
申请人： ZEISS CARL SMT AG , MECKING BIRGIT , DITTMANN OLAF , GRUNER TORALF , KAMENOV VLADIMIR , BRUNOTTE MARTIN
发明人： MECKING BIRGIT , DITTMANN OLAF , GRUNER TORALF , KAMENOV VLADIMIR , BRUNOTTE MARTIN
IPC分类号： G02B13/24 , G02B13/14 , G02B17/08 , G03F7/20 , H01L21/027
CPC分类号： G02B17/0892 , G02B13/143 , G02B17/08 , G03F7/70225 , G03F7/70308 , G03F7/70566 , G03F7/70966
摘要： The invention relates to a catadioptric projection objective for projecting a pattern, which is located inside the object plane of the projection objective, into the image plane of the projection objective. Said projection objective has, between the object plane and the image plane, a catadioptric objective part provided with a concave mirror (17), a first deviating mirror (16) and with at least one second deviating mirror (19). A polarization rotating device (26) rotates the polarization preferred direction of the light approximately 90 DEG inside the light path between the deviating mirrors. This permits an at least partial compensation for polarization-dependent reflectivity differences and phase effect differences of the deviating mirrors thereby enabling a projection with a largely identical contrast for all structural directions.
摘要翻译：用于成像放置在投影透镜图案的物平面中的投射物镜的像平面中的对象的反射折射投影物镜具有物平面和像平面的反射折射物镜部与凹面镜（17）和第一偏转反射镜（16）和至少一个第二偏转反射镜（19）之间。在偏转反射镜之间的光路中，利用偏振旋转器（26）由大约90°的光的偏振优选方向上旋转。在反射镜的作用这个偏振相关的反射率和相位差异可以至少部分地补偿。这导致画面而主要是为了所有结构的方向相同的对比。

2. 发明申请

WO2008145296A9 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 审中-公开
公开(公告)号：WO2008145296A9
公开(公告)日：2008-12-04
申请号：PCT/EP2008/004084
申请日：2008-05-21
申请人： CARL ZEISS SMT AG , KRAEHMER, Daniel , KAMENOV, Vladimir , TOTZECK, Michael , GOEHNERMEIER, Aksel
发明人： KRAEHMER, Daniel , KAMENOV, Vladimir , TOTZECK, Michael , GOEHNERMEIER, Aksel
IPC分类号： G03F7/20
摘要： Projection objectives of current designs for use in microlithography have a stray light component which varies over the exposure field. The variation of the stray light component over the field can be reduced and/or adapted to the variation of another projection objective by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface and/or by installing optical elements with specifically targeted light scattering properties in a pupil plane. In this, the invention makes use of the observation that the variation of the stray light component over the field and the different respective variations of the stray light components of different projection objectives present greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component of these projection objectives over the field and to thereby arrive at a stray light component that is constant over the entire field. Furthermore, particularly in the case of projection objectives for EUV lithography, which exhibit a higher stray light component than conventional projection objectives, it is possible to adapt different projection objectives to each other in regard to the stray light component and/or the variation of the stray light component over the exposure field.

3. 发明申请

WO2008145296A1 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 审中-公开
标题翻译：投影目标，微型投影曝光装置与投影目标，组件的微型制造方法，作为使用方法制造的组件
公开(公告)号：WO2008145296A1
公开(公告)日：2008-12-04
申请号：PCT/EP2008004084
申请日：2008-05-21
申请人： ZEISS CARL SMT AG , KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL , GOEHNERMEIER AKSEL
发明人： KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL , GOEHNERMEIER AKSEL
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70308 , G03F7/70341 , G03F7/70591 , G03F7/70941
摘要： Projection objectives of current designs for use in microlithography have a stray light component which varies over the exposure field. The variation of the stray light component over the field can be reduced and/or adapted to the variation of another projection objective by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface and/or by installing optical elements with specifically targeted light scattering properties in a pupil plane. In this, the invention makes use of the observation that the variation of the stray light component over the field and the different respective variations of the stray light components of different projection objectives present greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component of these projection objectives over the field and to thereby arrive at a stray light component that is constant over the entire field. Furthermore, particularly in the case of projection objectives for EUV lithography, which exhibit a higher stray light component than conventional projection objectives, it is possible to adapt different projection objectives to each other in regard to the stray light component and/or the variation of the stray light component over the exposure field.
摘要翻译：用于微光刻的当前设计的投影目标具有在曝光场上变化的杂散光分量。杂散光分量在场上的变化可以通过引入另外的杂散光而减小和/或适应于另一个投影物镜的变化。这有利地通过预先适配或改变近场表面的表面粗糙度和/或通过在光瞳平面中安装具有特定目标光散射特性的光学元件来实现。在此，本发明利用这样的观察：不同投影物镜上的杂散光分量在场上的变化和杂散光分量的不同变化对半导体元件的制造商而言比杂散光部件本身存在更大的问题。特别是在使用强散射多晶材料的浸没式光刻的投影物镜中，本发明提供了一种补偿这些投影物体在场上的杂散光成分增加的变化的方法，从而得到杂散光成分不断在整个领域。此外，特别是在EUV光刻的投影物镜的情况下，其表现出比常规投射物镜更高的杂散光分量的情况下，可以将杂散光分量和/或杂散光分量的变化杂散光分量在曝光场上。

4. 发明申请

WO2008145295A9 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 审中-公开
公开(公告)号：WO2008145295A9
公开(公告)日：2008-12-04
申请号：PCT/EP2008/004081
申请日：2008-05-21
申请人： CARL ZEISS SMT AG , KRAEHMER, Daniel , KAMENOV, Vladimir , TOTZECK, Michael
发明人： KRAEHMER, Daniel , KAMENOV, Vladimir , TOTZECK, Michael
IPC分类号： G03F7/20
摘要： Projection objectives of current designs for use in microlithography have a stray light component (503) which varies over the exposure field. The variation of the stray light component over the field can be reduced by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface. In this, the invention makes use of the observation that the variation of the stray light component over the field presents greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component (502) of these projection objectives over the field and to thereby arrive at a stray light component (501) that is constant over the entire field.

5. 发明申请

WO2006128613A1 MICROLITHOGRAPHY PROJECTION OBJECTIVE 审中-公开
标题翻译：微观投影目标
公开(公告)号：WO2006128613A1
公开(公告)日：2006-12-07
申请号：PCT/EP2006/004876
申请日：2006-05-23
申请人： CARL ZEISS SMT AG , KALLER, Julian , DODOC, Aurelian , FELDMANN, Heiko , KAMENOV, Vladimir , EPPLE, Alexander
发明人： KALLER, Julian , DODOC, Aurelian , FELDMANN, Heiko , KAMENOV, Vladimir , EPPLE, Alexander
IPC分类号： G03F7/20
CPC分类号： G03F7/70225 , G02B17/08 , G03F7/702 , G03F7/70283 , G03F7/70941
摘要： Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要翻译：关于在这样的投影物镜中抑制假光，描述用于成像到平面中的布置在物体平面中的图案的微光刻投影物镜。

6. 发明申请

WO2011073441A2 REFLECTIVE MASK FOR EUV LITHOGRAPHY 审中-公开
标题翻译：反射掩码的EUV LITHOGRAPHY
公开(公告)号：WO2011073441A2
公开(公告)日：2011-06-23
申请号：PCT/EP2010/070171
申请日：2010-12-17
申请人： CARL ZEISS SMT GMBH , KAMENOV, Vladimir , MIGURA, Sascha
发明人： KAMENOV, Vladimir , MIGURA, Sascha
IPC分类号： G03F1/14
CPC分类号： G03F7/70316 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70216
摘要： To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography, comprising a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured in such a manner that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.
摘要翻译：鉴于其高反射率，为了改进EUV光刻设备的掩模，建议用于EUV光刻的反射掩模，其包括在衬底上的反射多层系统，其被配置为在EUV范围内的工作波长并且具有至少层在工作波长处具有不同实际折射率部分的两种材料，其中所述多层系统（V）被配置成使得当被固定波长的EUV辐射和最小和最小的角度间隔照射时，最大发生角度高达21°，蜕变率小于30％。

7. 发明申请

WO2008145295A1 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 审中-公开
标题翻译：投影目标，微型投影曝光装置与投影目标，组件的微型制造方法，作为使用方法制造的组件
公开(公告)号：WO2008145295A1
公开(公告)日：2008-12-04
申请号：PCT/EP2008004081
申请日：2008-05-21
申请人： ZEISS CARL SMT AG , KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL
发明人： KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70308 , G03F7/70341 , G03F7/70591 , G03F7/70941
摘要： Projection objectives of current designs for use in microlithography have a stray light component (503) which varies over the exposure field. The variation of the stray light component over the field can be reduced by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface. In this, the invention makes use of the observation that the variation of the stray light component over the field presents greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component (502) of these projection objectives over the field and to thereby arrive at a stray light component (501) that is constant over the entire field.
摘要翻译：用于微光刻的当前设计的投影目标具有在曝光场上变化的杂散光分量（503）。通过引入额外的杂散光可以减少杂散光分量在场上的变化。这有利于通过预先适配或改变场附近表面的表面粗糙度来实现。在此，本发明利用这样的观察，杂散光成分在场上的变化比半导体元件本身对半导体元件的制造商带来更大的问题。特别是在使用强散射多晶材料的浸没式光刻技术的投影物镜中，本发明提供了一种补偿这些投影物体在场上的杂散光成分（502）的增加的变化的方法，从而达到杂散光在整个场上是恒定的组件（501）。

8. 发明申请

WO2003009021A1 VERZÖGERUNGSELEMENT AUS KUBISCHEM KRISTALL UND OPTISCHE SYSTEME DAMIT 审中-公开
标题翻译：延迟元件立方晶体和光学系统THAT
公开(公告)号：WO2003009021A1
公开(公告)日：2003-01-30
申请号：PCT/DE2002/002392
申请日：2002-06-25
申请人： CARL ZEISS SEMICONDUCTOR MANUFACTURING TECHNOLOGIES AG , HARTMAIER, Jürgen , FIOLKA, Damian , ZENZINGER, Markus , MECKING, Birgit , DITTMANN, Olaf , GRUNER, Toralf , KAMENOV, Vladimir , BRUNOTTE, Martin
发明人： HARTMAIER, Jürgen , FIOLKA, Damian , ZENZINGER, Markus , MECKING, Birgit , DITTMANN, Olaf , GRUNER, Toralf , KAMENOV, Vladimir , BRUNOTTE, Martin
IPC分类号： G02B5/30
CPC分类号： G03F7/70225 , G02B1/02 , G02B5/3091 , G03F7/70308 , G03F7/70966
摘要： Als Verzögerungselemente für das tiefe Ultraviolett werden Zentimeter dicke Platten oder Linsen aus Kalziumfluorid oder Bariumfluorid mit Strahlausbreitung in Richtung der -Kristallrichtung oder einer dazu äquivalenten Hauptachse vorgeschlagen, die spannungslos eingebaut werden. Eignung besonders für die Mikrolithographie bei 157 nm.
摘要翻译：由于延迟元件为深紫外线厘米提出在<110>晶与光束传播方向由氟化钙或氟化钡或与其等同的长轴厚的片材或透镜，其被内置通电。适宜特别是在157nm处微光刻。

9. 发明申请

WO2007025783A3 MICROLITHOGRAPHIC PROJECTION LIGHTING SYSTEM 审中-公开
标题翻译：微光刻投射曝光设备
公开(公告)号：WO2007025783A3
公开(公告)日：2007-05-10
申请号：PCT/EP2006008605
申请日：2006-09-04
申请人： ZEISS CARL SMT AG , KAMENOV VLADIMIR , KRAEHMER DANIEL , GRUNER TORALF , WEISSENRIEDER KARL-STEFAN , FELDMANN HEIKO , ZIRKEL ACHIM , PAZIDIS ALEXANDRA , THOME BRUNO , SIX STEPHAN
发明人： KAMENOV VLADIMIR , KRAEHMER DANIEL , GRUNER TORALF , WEISSENRIEDER KARL-STEFAN , FELDMANN HEIKO , ZIRKEL ACHIM , PAZIDIS ALEXANDRA , THOME BRUNO , SIX STEPHAN
IPC分类号： G03F7/20
CPC分类号： G02B1/11 , G03F7/70191 , G03F7/70308 , G03F7/70958
摘要： A microlithographic projection lighting system contains an optical element (36) that supports an antireflection coating (32) or a reflection coating in order to reduce or increase the reflectance. According to the invention, the antireflection coating is designed in such a manner that, over an angle of incident sector of 70°, the transmission coefficients of the antireflection coating for polarization states (42p 42s), which are orthogonal to one another, do not differ from one another by more than 10 %, preferably by no more than 3 %, and more preferably by no more than 1 %. The same applies to the reflection coefficients of the reflection coating. In order to correct for errors, which are caused by larger angular dependencies of the middle transmission or reflection coefficients and the effect upon the phase, the projection lighting system contains means (50) for homogenizing or distributing intensity, which are preferably placed in or in the vicinity of a field plane or pupil plane.
摘要翻译：微光刻投射曝光设备包括这有助于减少或抗反射涂层（32）和反射涂层的反射率的增加的光学元件（36）。根据本发明，Antiref法涂层被设计成使得在一定范围的70°远离的入射角，由不超过10％的Antire-柔性涂层相互正交的偏振态（42P 42S）的传输系数，优选不超过3％，更优选地，不超过1％，从彼此不同。这同样适用于反射涂层的反射系数。为了纠正错误，由平均传输或Ref和均质化的强度分布，其优选位于或靠近一个场或光瞳平面上引起含有该投射曝光系统的装置相（50）的效果的更大的角度依赖性lexionskoeffizienten 是。

10. 发明申请

WO2004092842A1 OPTICAL SYSTEM, METHOD OF ALTERING RETARDANCES THEREIN AND PHOTOLITHOGRAPHY TOOL 审中-公开
标题翻译：光学系统，改变其延迟的方法和光刻工具
公开(公告)号：WO2004092842A1
公开(公告)日：2004-10-28
申请号：PCT/EP2003/004015
申请日：2003-04-17
申请人： CARL ZEISS SMT AG , KAMENOV, Vladimir , GRUNER, Toralf
发明人： KAMENOV, Vladimir , GRUNER, Toralf
IPC分类号： G03F7/20
CPC分类号： G03F7/70225 , G02B5/3091 , G02B17/02 , G02B17/08 , G02B17/0892 , G03F7/70241 , G03F7/70958 , G03F7/70966
摘要： An optical system, for example a lens for a photolithography tool, includes a group of optical elements (L1, L2) that each comprise a birefringent cubic crystal such as CaF 2 . The crystal lattices of the crystals have different orientations, e.g. for reducing the overall retardance of the group by mutual compensation. The [110] crystal axis of at least one optical element (L1, L2) is tilted with respect to an optical axis (34) of the system (10) by a predefined tilting angle (θ 1 , θ 2 ) having an absolute value between 1° and 20°. This reduces the magnitude, but not significantly change the orientation of intrinsic birefringence. By selecting an appropriate tilting angle it is possible to achieve a better performance of the optical system. For example, the overall retardance of the optical system may be reduced, or the angular retardance distribution may be symmetrized.
摘要翻译：光学系统，例如用于光刻工具的透镜，包括一组光学元件（L1，L2），每组包括双折射立方晶体，例如CaF 2。晶体的晶格具有不同的取向，例如通过相互补偿减少集团的整体延迟。至少一个光学元件（L1，L2）的[110]晶轴相对于系统（10）的光轴（34）倾斜预定的倾斜角（θ1，θ2），绝对值介于1 °和20°。这降低了幅度，但并没有显着改变固有双折射的取向。通过选择适当的倾斜角度，可以实现光学系统的更好的性能。例如，可以减小光学系统的总体延迟，或者可以对角度延迟分布进行对称化。

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