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1. 发明申请

WO2007025783A3 MICROLITHOGRAPHIC PROJECTION LIGHTING SYSTEM 审中-公开
标题翻译：微光刻投射曝光设备
公开(公告)号：WO2007025783A3
公开(公告)日：2007-05-10
申请号：PCT/EP2006008605
申请日：2006-09-04
申请人： ZEISS CARL SMT AG , KAMENOV VLADIMIR , KRAEHMER DANIEL , GRUNER TORALF , WEISSENRIEDER KARL-STEFAN , FELDMANN HEIKO , ZIRKEL ACHIM , PAZIDIS ALEXANDRA , THOME BRUNO , SIX STEPHAN
发明人： KAMENOV VLADIMIR , KRAEHMER DANIEL , GRUNER TORALF , WEISSENRIEDER KARL-STEFAN , FELDMANN HEIKO , ZIRKEL ACHIM , PAZIDIS ALEXANDRA , THOME BRUNO , SIX STEPHAN
IPC分类号： G03F7/20
CPC分类号： G02B1/11 , G03F7/70191 , G03F7/70308 , G03F7/70958
摘要： A microlithographic projection lighting system contains an optical element (36) that supports an antireflection coating (32) or a reflection coating in order to reduce or increase the reflectance. According to the invention, the antireflection coating is designed in such a manner that, over an angle of incident sector of 70°, the transmission coefficients of the antireflection coating for polarization states (42p 42s), which are orthogonal to one another, do not differ from one another by more than 10 %, preferably by no more than 3 %, and more preferably by no more than 1 %. The same applies to the reflection coefficients of the reflection coating. In order to correct for errors, which are caused by larger angular dependencies of the middle transmission or reflection coefficients and the effect upon the phase, the projection lighting system contains means (50) for homogenizing or distributing intensity, which are preferably placed in or in the vicinity of a field plane or pupil plane.
摘要翻译：微光刻投射曝光设备包括这有助于减少或抗反射涂层（32）和反射涂层的反射率的增加的光学元件（36）。根据本发明，Antiref法涂层被设计成使得在一定范围的70°远离的入射角，由不超过10％的Antire-柔性涂层相互正交的偏振态（42P 42S）的传输系数，优选不超过3％，更优选地，不超过1％，从彼此不同。这同样适用于反射涂层的反射系数。为了纠正错误，由平均传输或Ref和均质化的强度分布，其优选位于或靠近一个场或光瞳平面上引起含有该投射曝光系统的装置相（50）的效果的更大的角度依赖性lexionskoeffizienten 是。

2. 发明申请

WO2004001480A3 CATADIOPTRIC REDUCTION OBJECTIVE 审中-公开
标题翻译：折反射缩小透镜
公开(公告)号：WO2004001480A3
公开(公告)日：2004-05-13
申请号：PCT/EP0306680
申请日：2003-06-25
申请人： ZEISS CARL SMT AG , MECKING BIRGIT , DITTMANN OLAF , GRUNER TORALF , KAMENOV VLADIMIR , BRUNOTTE MARTIN
发明人： MECKING BIRGIT , DITTMANN OLAF , GRUNER TORALF , KAMENOV VLADIMIR , BRUNOTTE MARTIN
IPC分类号： G02B13/24 , G02B13/14 , G02B17/08 , G03F7/20 , H01L21/027
CPC分类号： G02B17/0892 , G02B13/143 , G02B17/08 , G03F7/70225 , G03F7/70308 , G03F7/70566 , G03F7/70966
摘要： The invention relates to a catadioptric projection objective for projecting a pattern, which is located inside the object plane of the projection objective, into the image plane of the projection objective. Said projection objective has, between the object plane and the image plane, a catadioptric objective part provided with a concave mirror (17), a first deviating mirror (16) and with at least one second deviating mirror (19). A polarization rotating device (26) rotates the polarization preferred direction of the light approximately 90 DEG inside the light path between the deviating mirrors. This permits an at least partial compensation for polarization-dependent reflectivity differences and phase effect differences of the deviating mirrors thereby enabling a projection with a largely identical contrast for all structural directions.
摘要翻译：用于成像放置在投影透镜图案的物平面中的投射物镜的像平面中的对象的反射折射投影物镜具有物平面和像平面的反射折射物镜部与凹面镜（17）和第一偏转反射镜（16）和至少一个第二偏转反射镜（19）之间。在偏转反射镜之间的光路中，利用偏振旋转器（26）由大约90°的光的偏振优选方向上旋转。在反射镜的作用这个偏振相关的反射率和相位差异可以至少部分地补偿。这导致画面而主要是为了所有结构的方向相同的对比。

3. 发明申请

WO2008145296A1 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 审中-公开
标题翻译：投影目标，微型投影曝光装置与投影目标，组件的微型制造方法，作为使用方法制造的组件
公开(公告)号：WO2008145296A1
公开(公告)日：2008-12-04
申请号：PCT/EP2008004084
申请日：2008-05-21
申请人： ZEISS CARL SMT AG , KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL , GOEHNERMEIER AKSEL
发明人： KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL , GOEHNERMEIER AKSEL
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70308 , G03F7/70341 , G03F7/70591 , G03F7/70941
摘要： Projection objectives of current designs for use in microlithography have a stray light component which varies over the exposure field. The variation of the stray light component over the field can be reduced and/or adapted to the variation of another projection objective by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface and/or by installing optical elements with specifically targeted light scattering properties in a pupil plane. In this, the invention makes use of the observation that the variation of the stray light component over the field and the different respective variations of the stray light components of different projection objectives present greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component of these projection objectives over the field and to thereby arrive at a stray light component that is constant over the entire field. Furthermore, particularly in the case of projection objectives for EUV lithography, which exhibit a higher stray light component than conventional projection objectives, it is possible to adapt different projection objectives to each other in regard to the stray light component and/or the variation of the stray light component over the exposure field.
摘要翻译：用于微光刻的当前设计的投影目标具有在曝光场上变化的杂散光分量。杂散光分量在场上的变化可以通过引入另外的杂散光而减小和/或适应于另一个投影物镜的变化。这有利地通过预先适配或改变近场表面的表面粗糙度和/或通过在光瞳平面中安装具有特定目标光散射特性的光学元件来实现。在此，本发明利用这样的观察：不同投影物镜上的杂散光分量在场上的变化和杂散光分量的不同变化对半导体元件的制造商而言比杂散光部件本身存在更大的问题。特别是在使用强散射多晶材料的浸没式光刻的投影物镜中，本发明提供了一种补偿这些投影物体在场上的杂散光成分增加的变化的方法，从而得到杂散光成分不断在整个领域。此外，特别是在EUV光刻的投影物镜的情况下，其表现出比常规投射物镜更高的杂散光分量的情况下，可以将杂散光分量和/或杂散光分量的变化杂散光分量在曝光场上。

4. 发明申请

WO2008145295A1 PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 审中-公开
标题翻译：投影目标，微型投影曝光装置与投影目标，组件的微型制造方法，作为使用方法制造的组件
公开(公告)号：WO2008145295A1
公开(公告)日：2008-12-04
申请号：PCT/EP2008004081
申请日：2008-05-21
申请人： ZEISS CARL SMT AG , KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL
发明人： KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70308 , G03F7/70341 , G03F7/70591 , G03F7/70941
摘要： Projection objectives of current designs for use in microlithography have a stray light component (503) which varies over the exposure field. The variation of the stray light component over the field can be reduced by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface. In this, the invention makes use of the observation that the variation of the stray light component over the field presents greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component (502) of these projection objectives over the field and to thereby arrive at a stray light component (501) that is constant over the entire field.
摘要翻译：用于微光刻的当前设计的投影目标具有在曝光场上变化的杂散光分量（503）。通过引入额外的杂散光可以减少杂散光分量在场上的变化。这有利于通过预先适配或改变场附近表面的表面粗糙度来实现。在此，本发明利用这样的观察，杂散光成分在场上的变化比半导体元件本身对半导体元件的制造商带来更大的问题。特别是在使用强散射多晶材料的浸没式光刻技术的投影物镜中，本发明提供了一种补偿这些投影物体在场上的杂散光成分（502）的增加的变化的方法，从而达到杂散光在整个场上是恒定的组件（501）。

5. 发明专利

DE102008001800A1 未知
公开(公告)号：DE102008001800A1
公开(公告)日：2008-11-27
申请号：DE102008001800
申请日：2008-05-15
申请人： ZEISS CARL SMT AG
发明人： KRAEHMER DANIEL , KAMENOV VLADIMIR , TOTZECK MICHAEL
IPC分类号： G02B17/08 , G02B13/14 , G03F7/20

6. 发明专利

DE10229614A1 未知
公开(公告)号：DE10229614A1
公开(公告)日：2004-01-15
申请号：DE10229614
申请日：2002-06-25
申请人： ZEISS CARL SMT AG
发明人： MECKING BRIGIT , DITTMANN OLAF , GRUNER TORALF , KAMENOV VLADIMIR , BRUNOTTE MARTIN
IPC分类号： G02B13/24 , G02B13/14 , G02B17/08 , G03F7/20 , H01L21/027 , G02B27/28

7. 发明专利

DE102005023939A1 Imaging system, such as objective or illuminator of microlithographic projection illumination installation, includes two specified lens types and arrangement 未知
公开(公告)号：DE102005023939A1
公开(公告)日：2006-11-23
申请号：DE102005023939
申请日：2005-05-20
申请人： ZEISS CARL SMT AG
发明人： KAMENOV VLADIMIR
IPC分类号： G02B13/14 , G02B1/02 , G03F7/20
摘要： Invented imaging system includes first and second obliquely irradiated lenses of material with intrinsic birefringence. Lenses are so arranged in beam path that main beam passes in both lenses in specified manner.Thus preferred direction of fast axis of delay in first region and preferred direction of fast axis of dela in second region are arranged to compensate intrinsic birefringence effect, at least partly.

8. 发明专利

DE10293197D2 未知
公开(公告)号：DE10293197D2
公开(公告)日：2004-05-27
申请号：DE10293197
申请日：2002-06-25
申请人： ZEISS CARL SMT AG
发明人： HARTMAIER JUERGEN , FIOLKA DAMIAN , ZENZINGER MARKUS , MECKING BIRGIT , DITTMANN OLAF , GRUNER TORALF , KAMENOV VLADIMIR , BRUNOTTE MARTIN
IPC分类号： G02B1/02 , G02B5/30 , G03F7/20 , G03F7/207 , H01L21/027 , G02B1/08

9. 发明专利

DE102008043321A1 Optical system for use in micro-lithographic projection exposure system, has polarization manipulator increasing maximum value of delay in light cluster for field point in comparison to appropriate optical system without manipulator 未知
公开(公告)号：DE102008043321A1
公开(公告)日：2009-07-23
申请号：DE102008043321
申请日：2008-10-30
申请人： ZEISS CARL SMT AG
发明人： MUELLER RALF , KAMENOV VLADIMIR , TOTZECK MICHAEL
IPC分类号： G02B27/28 , G03F7/20
摘要： The system has a polarization manipulator (200) increasing a maximum value of delay distribution in a light cluster for a field point within a field level of the system in comparison to an appropriate optical system without the manipulator. The cluster strikes on the field point, where the value amounts to not more than 5 nanometers. The manipulator increases the delay for complete radiating of the cluster and is arranged in a plane in which a paraxial subaperture ratio amounts to 0.8. The manipulator has an optical element that is supplied with a mechanical voltage. Independent claims are also included for the following: (1) a method for manipulating reproduction characteristics of an optical system of a microlithographic projection exposure system (2) a method for microlithographic manufacturing of micro-structured elements.

10. 发明专利

AU2003229692A1 OPTICAL SYSTEM, METHOD OF ALTERING RETARDANCES THEREIN AND PHOTOLITHOGRAPHY TOOL 未知
公开(公告)号：AU2003229692A1
公开(公告)日：2004-11-04
申请号：AU2003229692
申请日：2003-04-17
申请人： ZEISS CARL SMT AG
发明人： KAMENOV VLADIMIR , GRUNER TORALF
IPC分类号： G02B5/30 , G02B17/02 , G02B17/08 , G03F7/20 , G02F1/00

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