会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • METHOD OF MANUFACTURING A THIN-FILM MAGNETIC HEAD
    • 制造薄膜磁头的方法
    • US20090283205A1
    • 2009-11-19
    • US12354519
    • 2009-01-15
    • Hiroyuki MiyazawaMasaya KatoMasanori Tachibana
    • Hiroyuki MiyazawaMasaya KatoMasanori Tachibana
    • B32B37/02
    • G11B5/3163G11B5/1278G11B5/3116G11B5/3146G11B5/315
    • A method of manufacturing a thin-film magnetic head is capable of planarizing and forming the upper surface of a main magnetic pole with high precision, of forming a trailing gap with a precise form, and of efficiently and precisely forming side shields and a trailing shield. A stopper layer is formed so as to cover a magnetic pole and so that a thickness thereof at positions on both sides of the magnetic pole is a predetermined side shield gap width. After a resist layer has been formed so that a thickness thereof at positions on both sides of the magnetic pole is a predetermined side shield width, an insulating layer is formed thereupon and then lapping according to a CMP process is carried out until the stopper layer becomes exposed. After this, the stopper layer is removed by dry etching until the upper surface of the magnetic pole becomes exposed, and then the upper surface of the magnetic pole is lapped by a CMP process until the surface is planarized. Next, the resist layer is removed and the stopper layer that becomes exposed due to such removal is also removed to form the trailing shield and the side shields.
    • 制造薄膜磁头的方法能够以高精度平面化和形成主磁极的上表面,以精确的形式形成后跟间隙,并且有效和精确地形成侧屏蔽和后屏蔽 。 形成阻挡层以覆盖磁极,并且使得其在磁极两侧的位置处的厚度为预定的侧屏蔽间隙宽度。 在形成抗蚀剂层之后,使其在磁极两侧的位置处的厚度为预定的侧屏蔽宽度,在其上形成绝缘层,然后进行根据CMP工艺的研磨,直到阻挡层变为 裸露。 之后,通过干蚀刻去除阻挡层,直到磁极的上表面露出,然后通过CMP工艺研磨磁极的上表面,直到表面平坦化。 接下来,除去抗蚀剂层,并且除去由于这种去除而变得露出的阻挡层以形成后屏蔽和侧屏蔽。
    • 5. 发明授权
    • High-purity quartz glass and method for the preparation thereof
    • 高纯石英玻璃及其制备方法
    • US5968259A
    • 1999-10-19
    • US917933
    • 1997-08-27
    • Katsuhiko KemmochiHiroyuki MiyazawaHiroyuki WatanabeKiyotaka MaekawaChuzaemon TsujiManabu Saitou
    • Katsuhiko KemmochiHiroyuki MiyazawaHiroyuki WatanabeKiyotaka MaekawaChuzaemon TsujiManabu Saitou
    • C03C1/00C03C3/06C30B15/10C30B35/00C30B29/18
    • C03C3/06C03C1/006C30B15/10C30B35/002C03C2201/02C03C2203/10Y10T29/40
    • Provided are high-purity quartz glass having a high purity, in particular, with little zirconium (Zr) and manufactured at low costs from natural quartz as the starting material and a method for the preparation thereof. High-purity quartz glass is manufactured, in a method for the preparation of natural quartz glass which is prepared by subjecting crystalline natural quartz to fusion by heating, in conducting refining of the starting material of the crystalline natural quartz by successively practicing a combination of at least one unit refining procedure, in a procedure in which a portion of the starting quartz after practicing the specified unit refining procedure is taken by sampling for analysis, the same is decomposed with hydrofluoric acid or an acid mixture of hydrofluoric acid and another inorganic acid, the decomposition solution is subjected to evaporation to dryness either as such or after addition of another inorganic acid, the residue is melted by heating with admixture of a salt or hydroxide of an alkali metal, the salt or hydroxide of the alkali metal is then dissolved in an aqueous solution of an inorganic acid or in pure water, the solution is subjected to quantitative analysis for the impurities therein to determine the contents of impurities in the crystalline natural quartz and the refined crystalline natural quartz, of which the content of impurities has been found to be lower than a specified value, is subjected to fusion by heating as a starting material to prepare high-purity quartz glass.
    • 提供了具有高纯度的高纯度石英玻璃,特别是少量锆(Zr),并以天然石英作为起始原料以低成本制造,以及其制备方法。 制造高纯度石英玻璃的方法中,天然石英玻璃的制备方法是将结晶天然石英通过加热进行熔融制备,在通过连续地实施在 至少一个单元精制程序,在通过取样进行分析之后,通过取样进行一部分实施了规定的单元精炼处理后的起始石英的一部分,同时用氢氟酸或氢氟酸与其它无机酸的酸混合物分解, 将分解溶液按照本身或加入另一种无机酸进行蒸发干燥后,通过用碱金属的盐或氢氧化物的混合物加热将残余物熔化,然后将碱金属的盐或氢氧化物溶于 无机酸的水溶液或纯水中,对该溶液进行定量分析 e杂质以确定结晶天然石英中的杂质含量和发现杂质含量低于规定值的精制结晶天然石英通过加热作为原料进行熔融以制备 高纯石英玻璃。
    • 6. 发明授权
    • Base body of reflecting mirror and method for preparing the same
    • 反射镜的基体及其制备方法
    • US5576884A
    • 1996-11-19
    • US458672
    • 1995-06-02
    • Yoshiaki IseHiroyuki MiyazawaHiroyuki KimuraShinichi OkoshiTatsumasa NakamuraToshiyuki Kato
    • Yoshiaki IseHiroyuki MiyazawaHiroyuki KimuraShinichi OkoshiTatsumasa NakamuraToshiyuki Kato
    • G02B5/08G02B5/10G02B7/182G02B7/183C03B23/00C03B23/20
    • G02B7/183G02B5/08G02B5/10Y10S359/90Y10T428/249969Y10T428/249976Y10T428/249977
    • A light-weight base body of a reflecting mirror, such as those used in reflecting astronomical telescopes, is proposed which is made from fused silica glass or high-silica glass and is advantageous in respect of the excellent thermal and mechanical stability in dimensions to ensure high performance of the reflecting mirror. The base body is composed of a front plate, i.e. a surface plate to provide the optical surface, and a supporting body of porous foamed glass integrally bonded to the front plate. These two parts of the base body can be bonded together by sandwiching a layer of a finely divided silica powder therebetween and heating the assemblage at a temperature higher than the softening point of the silica powder so that the silica powder is softened or melted to firmly join the two parts sandwiching the powder layer. The base body can be further improved in respect of the mechanical stability by providing a rear plate backing the porous foamed body and a reinforcing hoop-like side layer surrounding the side surface of the porous foamed body, each made from fused quartz glass or high-silica glass and bonded to the porous foamed body by utilizing melting of a layer of silica powder therebetween.
    • 提出了一种反射镜的轻质基体,例如用于反射天文望远镜的反射镜,其由熔融石英玻璃或高硅石玻璃制成,并且在尺寸方面优良的热和机械稳定性是有利的,以确保 高性能的反光镜。 基体由前板,即提供光学表面的表面板和与前板一体地结合的多孔泡沫玻璃的支撑体组成。 基体的这两个部分可以通过在其间夹有细碎的二氧化硅粉末层而将它们粘合在一起,并在高于二氧化硅粉末的软化点的温度下加热组合物,使得二氧化硅粉末软化或熔化以牢固地结合 两部分夹在粉末层上。 通过提供背面多孔泡沫体的后板和围绕多孔泡沫体的侧表面的加强箍型侧层,每个由熔融石英玻璃或高熔点石英玻璃制成,可以进一步改善基体的机械稳定性, 二氧化硅玻璃,并通过利用二氧化硅粉末之间的熔融而与多孔发泡体结合。
    • 8. 发明授权
    • Semiconductor memory circuit device and method for fabricating same
    • 半导体存储器电路器件及其制造方法
    • US5237187A
    • 1993-08-17
    • US799541
    • 1991-11-27
    • Naokatsu SuwanaiHiroyuki MiyazawaAtushi OgishimaMasaki NagaoKyoichiro AsayamaHiroyuki UchiyamaYoshiyuki KanekoTakashi YoneokaKozo WatanabeKazuya EndoHiroki Soeda
    • Naokatsu SuwanaiHiroyuki MiyazawaAtushi OgishimaMasaki NagaoKyoichiro AsayamaHiroyuki UchiyamaYoshiyuki KanekoTakashi YoneokaKozo WatanabeKazuya EndoHiroki Soeda
    • H01L21/8242H01L27/108
    • H01L27/10844H01L27/10805H01L27/10808
    • In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region, which is a memory cell array region, a first MISFET having a gate electrode and source and drain regions; first and second capacitor electrodes and a dielectric film extended over a first insulating film and over the gate electrode; a second insulating film disposed on the second capacitor electrode; a third insulating film interposed between the first insulating film and first capacitor electrode; and a first wiring positioned on the second insulating film. In a second region of the device, which is a peripheral circuit region, there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a second insulating film on a third insulating film, the third insulating film being interposed between the first and second insulating films; and a second wiring on the second insulating film. The second wiring is formed by the same level conductor layer as that forming the first wiring. Similarly, the first through third insulating films of the first region are correspondingly associated with the first through third insulating films of the second region, respectively.
    • 在其中每个存储单元由存储单元选择MISFET的串联电路和层叠结构的信息存储电容器构成的半导体存储器电路器件中,存在作为存储单元阵列区域的第一区域,第一 MISFET具有栅极电极和源极和漏极区域; 第一和第二电容器电极以及在第一绝缘膜上并在栅电极上方延伸的电介质膜; 设置在所述第二电容器电极上的第二绝缘膜; 介于所述第一绝缘膜和所述第一电容器电极之间的第三绝缘膜; 以及位于第二绝缘膜上的第一布线。 在作为外围电路区域的器件的第二区域中,存在具有栅极电极和源极和漏极区域的第二MISFET, 栅电极上的第一绝缘膜; 在第三绝缘膜上的第二绝缘膜,所述第三绝缘膜介于所述第一和第二绝缘膜之间; 以及在第二绝缘膜上的第二布线。 第二布线由与形成第一布线的层相同的导体层形成。 类似地,第一区域的第一至第三绝缘膜分别与第二区域的第一至第三绝缘膜相关联。