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    • 11. 发明申请
    • LASER THIN FILM POLY-SILICON ANNEALING SYSTEM
    • 激光薄膜多晶硅退火系统
    • WO2005054949A3
    • 2005-12-15
    • PCT/US2004037617
    • 2004-11-12
    • CYMER INCPARTLO WILLIAM NDAS PALASH PHUDYMA RUSSELLTHOMAS MICHAEL
    • PARTLO WILLIAM NDAS PALASH PHUDYMA RUSSELLTHOMAS MICHAEL
    • B23K26/06G03F20060101H01L21/20H01S3/081H01S3/22H01S3/223H01S3/225H01S3/23
    • H01S3/0818B23K26/042B23K26/0622B23K26/0738B23K26/705H01L21/02532H01L21/02675H01S3/225H01S3/2255H01S3/2308H01S3/2366
    • A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in a film on a workpiece is disclosed, which may comprise a master oscillator power amplifier MOPA or power oscillator power amplifier configured XeF laser system producing a laser output light pulse beam at a high repetition rate and high power with a pulse to pulse dose control; an optical system producing an elongated thin pulsed working beam from the laser output light pulse beam. The apparatus may further comprise the laser system is configured as a POPA laser system and further comprising: relay optics operative to direct a first output laser light pulse beam from a first laser PO unit into a second laser PA unit; and, a timing and control module timing the creation of a gas discharge in the first and second laser units within plus or minus 3 ns, to produce the a second laser output light pulse beam as an amplification of the first laser output light pulse beam. The system may comprise divergence control in the oscillator laser unit. Divergence control may comprise an unstable resonator arrangement. The system may further comprise a beam pointing control mechanism intermediate the laser and the workpiece and a beam position control mechanism intermediate the laser and the workpiece. Beam parameter metrology may provide active feedback control to the beam pointing mechanism and active feedback control to the beam position control mechanism.
    • 公开了一种气体放电激光结晶装置和方法,用于在工件上进行膜内晶体结构或取向的变换,其可包括主振荡器功率放大器MOPA或功率振荡器功率放大器配置的XeF激光系统,产生激光输出光 脉冲束以高重复率和高功率以及脉冲到脉冲剂量控制; 光学系统从激光输出光脉冲束产生细长的薄脉冲工作光束。 该设备可以进一步包括激光系统被配置为POPA激光系统并且还包括:中继光学器件,用于将来自第一激光PO单元的第一输出激光脉冲光束引导到第二激光PA单元中; 以及定时和控制模块,用于在第一和第二激光单元中产生正或负3ns内的气体放电,以产生作为第一激光输出光脉冲束的放大的第二激光输出光脉冲束。 该系统可以包括振荡器激光器单元中的发散控制。 发散控制可以包括不稳定的谐振器布置。 该系统还可以包括位于激光器和工件之间的光束指向控制机构以及位于激光器和工件之间的光束位置控制机构。 波束参数测量可以提供对波束指向机构的主动反馈控制和对波束位置控制机构的主动反馈控制。
    • 13. 发明申请
    • PULSE ENERGY CONTROL FOR EXCIMER LASER
    • 激光激光的脉冲能量控制
    • WO9919950A8
    • 1999-06-24
    • PCT/US9818138
    • 1998-09-01
    • CYMER INCSANDSTROM RICHARD LBESAUCELE HERVE AFOMENKOV IGOR VDAS PALASH P
    • SANDSTROM RICHARD LBESAUCELE HERVE AFOMENKOV IGOR VDAS PALASH P
    • G03F7/20H01S3/03H01S3/036H01S3/08H01S3/134H01S3/137H01S3/225H01S3/18
    • G03F7/70025G03F7/70041G03F7/70216G03F7/70558G03F7/70575H01S3/03H01S3/036H01S3/08009H01S3/134H01S3/225H01S3/2251H01S3/2256
    • A process for controlling pulse energy in burst of pulses produced by an excimer laser. The energy of each pulse in each burst is measured. The rate of change of pulse energy with charging voltage is determined. A pulse energy error is determined for a previous pulse of the present burst. An integrated dose error is also determined for all previous pulses in the current burst. A charging voltage for the next pulse is determined using the pulse energy error, the integrated dose error, the rate of change of energy with charging voltage and a reference voltage. In a preferred embodiment, the rate of change of energy with voltage is determined by dithering the voltage during two pulses of each burst, once lower and once higher. The reference voltage is a voltage calculated using prior voltage and energy data. In this embodiment the method of determining the reference voltage during a first portion of the pulse is different from the method used during a latter portion of the burst. During the first set of pulses, for each pulse, (40 in this embodiment) a specified voltage calculated using voltage and energy data from a corresponding pulse in a previous burst is utilized as a prediction of the voltage needed to produce a pulse energy converging on a target pulse energy. For pulses (41) and thereafter the reference voltage for each pulse is the specified voltage for the previous pulse.
    • 用于通过准分子激光器产生的脉冲脉冲串来控制脉冲能量的过程。 测量每个脉冲中每个脉冲的能量。 确定脉冲能量随充电电压的变化率。 针对当前脉冲串的先前脉冲确定脉冲能量误差。 还针对当前突发中的所有先前脉冲确定积分剂量误差。 使用脉冲能量误差,积分剂量误差,带充电电压的能量变化率和参考电压来确定下一个脉冲的充电电压。 在优选实施例中,通过在每个脉冲串的两个脉冲期间抖动电压来确定能量与电压的变化率,一次较低和一次更高。 参考电压是使用先前的电压和能量数据计算的电压。 在该实施例中,在脉冲的第一部分期间确定参考电压的方法与在脉冲串的后一部分期间使用的方法不同。 在第一组脉冲期间,对于每个脉冲(在本实施例中为40)使用来自先前脉冲串中的相应脉冲的电压和能量数据计算的指定电压被用作产生脉冲能量收敛所需的电压的预测 目标脉冲能量。 对于脉冲(41),此后每个脉冲的参考电压是先前脉冲的指定电压。