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1. 发明专利

JP2008022026A Reliable, modular, production-quality narrow-band high repetition-rate f2 laser 审中-公开
标题翻译：可靠，模块化，生产质量窄带高反射率F2激光
公开(公告)号：JP2008022026A
公开(公告)日：2008-01-31
申请号：JP2007236405
申请日：2007-09-12
申请人： Cymer Inc , サイマー, インコーポレイテッドCymer, Inc.
发明人： HOFMANN THOMAS , HUEBER JEAN-MARC , DAS PALASH P , ISHIHARA TOSHIHIKO , THOMAS P DAFFY , JOHN T MELCHIOR , BESAUCELE HERVE A , MORTON RICHARD G , NESS RICHARD M , NEWMAN PETER C , PARTLO WILLIAM N , ROTHWEIL DANIEL A , SANDSTROM RICHARD L
IPC分类号： H01S3/03 , H01S3/097 , G03F7/20 , H01S3/137 , H01S3/225
CPC分类号： G03F7/70575
摘要： PROBLEM TO BE SOLVED: To provide a reliable, modular, production-quality narrow-band high repetition-rate F 2 laser. SOLUTION: A reliable, modular, production-quality excimer laser capable of producing 10 mJ laser pulses in the range of 1,000 Hz to 2,000 Hz or greater is provided. Replaceable modules include a laser chamber, a pulse power system including three modules, an optical resonator comprised of a line narrowing module and an output coupler module, a wavemeter module, an electrical control module, a cooling water module, and a gas control module. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可靠的模块化生产质量窄带高重复率F 2 激光器。
解决方案：提供了一种可靠，模块化，生产质量准分子激光器，能够产生1,000 Hz至2,000 Hz或更大范围内的10 mJ激光脉冲。可替代模块包括激光室，包括三个模块的脉冲电力系统，包括线路窄化模块和输出耦合器模块的光学谐振器，波形计模块，电气控制模块，冷却水模块和气体控制模块。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2001148529A NARROW-BAND GAS DISCHARGE LASER WITH GAS ADDITIVE 失效
公开(公告)号：JP2001148529A
公开(公告)日：2001-05-29
申请号：JP2000261880
申请日：2000-07-27
申请人： CYMER INC
发明人： BESAUCELE HERVE A , TOSHIHIKO ISHIHARA , HOFMANN THOMAS
IPC分类号： H01S3/104 , G03F7/20 , H01S3/02 , H01S3/03 , H01S3/034 , H01S3/036 , H01S3/08 , H01S3/0971 , H01S3/0977 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To provide a narrow-band pulse excimer laser, that can generate a pulse with a frequency within a range of approximately 500 to 2,000 Hz, and has enhanced energy dose control and reproducibility. SOLUTION: Extremely small quantities of a stabilizing additive, consisting of oxygen or heavy noble gas (xenon or randon for KrF lasers, krypton, xenon, or randon for ArF lasers) are added to a gas mixture. When approximately 30 ppm of xenon is added to the KrF laser, energy stability is substantially improved. When approximately 6 to 10 ppm of xeon, or 40 ppm of krypton is added to the ArF laser, performance is improved. In the case of the KrF laser, fluorine partial pressure is decreased to 0.10% or lower, and at the same time the reflection factor of an output coupler is increased to 25% or higher, thus obtaining narrow bandwidth. Fused silica beam expansion prisms used in a line-narrowing module are replaced with calcium fluoride prisms.

3. 发明专利

JPH11191660A GAS DOPED NARROW-BAND EXCIMER LASER 失效
公开(公告)号：JPH11191660A
公开(公告)日：1999-07-13
申请号：JP28979498
申请日：1998-10-12
申请人： CYMER INC
发明人： HOFMANN THOMAS , DAS PALASH P , TOSHIHIKO ISHIHARA , ERSHOV ALEXANDER I
IPC分类号： H01S3/038 , G03F7/20 , H01S3/02 , H01S3/03 , H01S3/034 , H01S3/036 , H01S3/08 , H01S3/0971 , H01S3/1055 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To provide an excimer laser, more specifically a gas-doped narrow- band excimer laser. SOLUTION: A gas-doped narrow-band excimer laser is constituted of a laser chamber formed of a fluorine-compatible material, two long electrodes, at least a pre-ionization device, and a mixed laser gas constituted of a first rare gas, fluorine, buffer gas, and stabilizing additive of 100 ppm or below which are all prescribed in pressure. Here, the stabilizing additive agent is selected so as to be composed of 10 ppm or below of oxygen and a certain mount of second rare gas which is heavier in mass than that of the first rare gas.

4. 发明专利

JPH11191648A NARROW FREQUENCY BAND EXCIMER LASER 失效
公开(公告)号：JPH11191648A
公开(公告)日：1999-07-13
申请号：JP28716298
申请日：1998-10-09
申请人： CYMER INC
发明人： TOSHIHIKO ISHIHARA , DAS PALASH P , HOFMANN THOMAS , ERSHOV ALEXANDER I
IPC分类号： H01S3/038 , G03F7/20 , H01S3/02 , H01S3/03 , H01S3/034 , H01S3/036 , H01S3/08 , H01S3/0971 , H01S3/1055 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To enhance energy dose control and reproducibility by suppressing the partial pressure of fluorine below a specified percentage and increasing the reflection of an output coupler above a specified percentage. SOLUTION: A narrow frequency band excimer laser comprises a laser chamber 8 made of a material coexisting with fluorine provided with two elongated electrode rods and at least a pre-ionization unit and filled with a laser gas composed of a rare gas, fluorine, a buffer gas and oxygen having concentration of 2-500 ppm with a total pressure being limited, and a beam intensifier module having at least one beam expansion prism, a lattice and a tuning means for lattice. In a preferred embodiment, partial pressure of fluorine is set lower than 0.10% and the reflection of an output coupler is increased to 25% or above.

5. 发明专利

JP2013021354A Systems and methods for implementing interaction between laser shaped as line beam and film deposited on substrate 有权
公开(公告)号：JP2013021354A
公开(公告)日：2013-01-31
申请号：JP2012209642
申请日：2012-09-24
申请人： Cymer Inc , サイマーインコーポレイテッド
发明人： DAS PALASH P , HOFMANN THOMAS , DAVIS JOSE E , SCOT T SMITH , PARTLO WILLIAM N
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide systems and methods for positioning a film for interaction with a laser shaped as a line beam and for controlling parameters of the shaped line beam, for example, to melt an amorphous silicon film, for example, to crystallize the film for the purpose of manufacturing thin film transistors (TFTs).SOLUTION: A laser crystallization apparatus and method are provided for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In another aspect of an embodiment of the present invention, a system and a method are provided for stretching a laser pulse. In further another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range.

6. 发明专利

JP2000353839A PULSE POWER SYSTEM WITH LONG-PULSE FOR GAS DISCHARGE LASER 失效
公开(公告)号：JP2000353839A
公开(公告)日：2000-12-19
申请号：JP2000123349
申请日：2000-03-21
申请人： CYMER INC
发明人： HOFMANN THOMAS , BRUCE D JOHANSON
IPC分类号： H01S3/097 , G03F7/20 , H03K3/57 , H03K17/80
摘要： PROBLEM TO BE SOLVED: To increase integrated square pulse sustaining time by applying a high voltage to an electrode which generates electrical discharge on accepting a charge from a sustainer capacitor by a peaking capacitor and providing an oversaturated inductor between a sustainer capacitor and a peaking capacitor. SOLUTION: A sustainer capacitor Cp-1 with a capacity of 27nF is subjected to pulse charge at about 120 ns from a supply capacitor Cp-2 at 24nF. During this time, a spiker or a peaking capacitor Cp is insulated by an oversaturated inductor Lp-1. The inductor Lp-1 changes to its low inductance state at the end of Cp-1 charge and the capacitor Cp is subjected to resonance charge at 8nF. Since Cp is smaller than Cp-1, the voltage of Cp rises to a higher value. The high voltage of Cp destroys laser gas and generates a rapid laser pulse. When Cp is exhausted once, a discharge current is supported by Cp-1 and a second laser pulse is generated.

7. 发明专利

JP2000058944A HIGHLY RELIABLE MODULAR MANUFACTURE HIGH-QUALITY NARROW BAND HIGH REPEAT RATE F2 LASER 失效
公开(公告)号：JP2000058944A
公开(公告)日：2000-02-25
申请号：JP17729599
申请日：1999-05-20
申请人： CYMER INC
发明人： HOFMANN THOMAS , HUEBER JEAN-MARC , DAS PALASH P , ISHIHARA TOSHIHIKO , THOMAS P DAFFY , JOHN T MELCHIOR , BESAUCELE HERVE A , MORTON RICHARD G , NESS RICHARD M , NEWMAN PETER C , PARTLO WILLIAM N , ROTHWEIL DANIEL A , SANDSTROM RICHARD L
IPC分类号： H01S3/03 , G03F7/20 , H01S3/137 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable modular high-quality narrow band F2 laser with high repeat rate. SOLUTION: A module includes a laser chamber 211, a pulse power system including three modules, an optical resonator consisting of a line band narrowing module and an output coupler module, a wave meter module, an electric control module, a cooling water module, and a gas control module. important reform is performed for the pulse power unit for making out shorter start up time and reformed pulse energy control. These reforms are performed inclusive of an increased capacity high-voltage power source 208 which is equipped with a voltage bleed down circuit related to accurate trimming; and a reformed commutator module 209 which generates high voltage pulses from a capacitor charged by a high-voltage power source, and amplifies the pulse voltage to about twenty three times with a very quick voltage transformer having secondary winding consisting of the stainless steel rod of single four segments.

8. 发明专利

JP2013021353A Systems and methods for implementing interaction between laser shaped as line beam and film deposited on substrate 有权
标题翻译：用于实现激光形成的线束和衬底上沉积的膜之间的相互作用的系统和方法
公开(公告)号：JP2013021353A
公开(公告)日：2013-01-31
申请号：JP2012209641
申请日：2012-09-24
申请人： Cymer Inc , サイマーインコーポレイテッド
发明人： DAS PALASH P , HOFMANN THOMAS , DAVIS JOSE E , SCOT T SMITH , PARTLO WILLIAM N
IPC分类号： H01L21/20 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide systems and methods for positioning a film for interaction with a laser shaped as a line beam and for controlling parameters of the shaped line beam, for example, to melt an amorphous silicon film, for example, to crystallize the film for the purpose of manufacturing thin film transistors (TFTs).SOLUTION: A laser crystallization apparatus and method are provided for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In another aspect of an embodiment of the present invention, a system and a method are provided for stretching a laser pulse. In further another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range.
摘要翻译：要解决的问题：提供用于定位用于与形成为线束的激光相互作用的膜并用于控制成形线束的参数的系统和方法，例如熔化非晶硅膜，例如，为了制造薄膜晶体管（TFT）的目的，使膜结晶化。解决方案：提供激光结晶装置和方法，用于选择性地熔融沉积在基板上的诸如非晶硅的膜。该装置可以包括用于产生用于熔化膜的拉伸激光脉冲的光学系统。在本发明的实施例的另一方面，提供了一种用于拉伸激光脉冲的系统和方法。在另一方面，提供了一种用于在预定范围内沿着光束路径的位置维持脉冲激光束（拉伸或未拉伸）的发散的系统。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2001332794A VERY NARROW BAND INJECTION SEEDED F2 LITHOGRAPHY LASER 失效
公开(公告)号：JP2001332794A
公开(公告)日：2001-11-30
申请号：JP2000335225
申请日：2000-09-27
申请人： CYMER INC
发明人： ERSHOV ALEXANDER I , ONKELS ECKEHARD D , DAS PALASH P , PARTLO WILLIAM N , HOFMANN THOMAS
IPC分类号： H01S3/223 , H01S3/03 , H01S3/097 , H01S3/23
摘要： PROBLEM TO BE SOLVED: To provide an injected seeded laser for use in integrated circuit lithography in which the wavelength can be regulated variably with a degree of freedom. SOLUTION: The tunable injected seeded very narrow band F2 lithography laser combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam operated in a first gain medium which beam is used to simulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.

10. 发明申请

WO0038286A9 ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE 审中-公开
标题翻译：具有低脉冲能量和高反射率的ArF激光
公开(公告)号：WO0038286A9
公开(公告)日：2002-08-29
申请号：PCT/US9929682
申请日：1999-12-13
申请人： CYMER INC , BESAUCELE HERVE A , HUEBER JEAN-MARC , ERSHOV ALEXANDER I , HOFMANN THOMAS , FLEUROV VLADIMIR B
发明人： BESAUCELE HERVE A , HUEBER JEAN-MARC , ERSHOV ALEXANDER I , HOFMANN THOMAS , FLEUROV VLADIMIR B
IPC分类号： G03F7/20 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225 , H01S3/22
CPC分类号： G03F7/70025 , G03F7/70041 , G03F7/70558 , G03F7/70575 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/223 , H01S3/225
摘要： A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse repetition energies in the range of about 2mJ to 5mJ or greater with a full width half maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 mu m (100nm) or less, replaceable modules include a laser chamber (80); a modular pulse power system; and a line narrowing module (86) for a given laser power output. The higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.
摘要翻译：一种可靠的模块化生产质量的ArF准分子激光器，其能够以3,000至4,000Hz或更大的重复频率产生激光脉冲，脉冲重复能量在约2mJ至5mJ或更大的范围内，全宽度半最大带宽约为0.4 pm以下，剂量稳定性小于0.4％。使用该激光器作为照明源，步进器或扫描仪设备可以产生0.10μm（100nm）或更小的集成电路分辨率，可更换模块包括激光室（80）; 模块式脉冲电源系统; 以及用于给定激光功率输出的线窄模块（86）。较高的重复率提供了两个重要的优点。较低的每脉冲能量意味着更少的光学损伤，并且指定照射剂量的较大数量的脉冲表示更好的剂量稳定性。

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