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    • 12. 发明申请
    • ALTERNATIVE FUELS FOR EUV LIGHT SOURCE
    • EUV光源替代燃料
    • WO2007005414A3
    • 2008-10-02
    • PCT/US2006024959
    • 2006-06-27
    • CYMER INCBOWERING NORBERT RKHODYKIN OLEHBYKANOV ALEXANDER NFOMENKOV IGOR V
    • BOWERING NORBERT RKHODYKIN OLEHBYKANOV ALEXANDER NFOMENKOV IGOR V
    • G01J3/10H05G2/00
    • H05G2/006B82Y10/00G21K2201/061H05G2/003H05G2/005H05G2/008
    • An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and / or Indium.
    • 公开了一种EUV光源,其可以包括至少一个具有表面的光学元件,例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面,源材料可以基本上由锡化合物组成,并且可以通过沉积在光学元件上的等离子体形成而产生锡屑,此外,锡化合物可以包括有效蚀刻沉积在光学上的锡的元素 元素表面。 锡化合物可以包括SnBr 4,SnBr 2和SnH 4。 在另一方面,EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料,源材料包含锡和至少一种其它金属,例如具有镓和/或铟的锡。
    • 13. 发明申请
    • EUV LIGHT SOURCE
    • EUV光源
    • WO2005091879A2
    • 2005-10-06
    • PCT/US2005005935
    • 2005-02-24
    • CYMER INCPARTLO WILLIAM NBOWERING NORBERT RERSHOV ALEXANDER IFOMENKOV IGOR VOLIVER I ROGERVIATELLA JOHNJACQUES ROBERT N
    • PARTLO WILLIAM NBOWERING NORBERT RERSHOV ALEXANDER IFOMENKOV IGOR VOLIVER I ROGERVIATELLA JOHNJACQUES ROBERT N
    • G03F7/20G21K1/06H01J35/20H05G2/00
    • G03F7/70033B82Y10/00G03F7/70175G03F7/70916G21K1/062G21K2201/061G21K2201/065G21K2201/067H05G2/003H05G2/005H05G2/006H05G2/008
    • An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma ("LPP") extreme ultraviolet ("EUV") light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.
    • 公开了一种用于EUV光产生的装置和方法,其可以包括激光产生的等离子体(“LPP”)极紫外(“EUV”)光源控制系统,其包括适于递送移动等离子体引发靶的目标传送系统和EUV光收集 光学元件具有限定期望的等离子体起始位置的焦点,包括:目标跟踪和反馈系统,包括:至少一个成像装置,其提供目标流轨迹的图像作为输出,其中,所述目标流轨迹来自所述目标流轨迹的成像速度 摄像机太慢,不能成像形成被作为目标流轨迹成像的目标流的各个等离子体形成目标; 流轨迹误差检测器,从与期望的等离子体起始位置相交的期望的流轨道检测在大致垂直于目标流轨迹的至少一个轴上的目标流轨迹位置的误差。 至少一个目标交叉检测器可以瞄准目标轨道并且检测等离子体形成目标通过目标轨道中的选定点的通过。 驱动激光触发机构利用目标交叉检测器的输出来确定驱动激光触发的定时,以便驱动激光输出脉冲在等离子体引发目标处沿着目标轨道在一般最接近的等离子体起始位置处相交 接近所需的等离子体引发位点。 等离子体起始检测器可以瞄准目标轨道并且检测针对相应目标的等离子体起始位置沿着目标轨迹的位置。 中间焦点照明器可以照亮形成在中间焦点处的孔,以对至少一个成像装置中的孔进行成像。 所述至少一个成像装置可以是至少两个成像装置,每个成像装置基于对所述中间焦点的图像的图像的分析,提供与所述目标轨道与所述中间焦点的图像的垂直中心线轴线分离相关的误差信号 所述至少两个成像装置。 目标传送反馈和控制系统可以包括目标传送单元; 目标传送位移控制机构至少在对应于从第一成像装置中的图像的分析导出的第一位移误差信号的轴上移动目标传送机构,并且至少在与由第二位移误差信号 对第二成像装置中的图像进行分析。
    • 14. 发明申请
    • LPP EUV LIGHT SOURCE
    • LPP EUV光源
    • WO2005089131A2
    • 2005-09-29
    • PCT/US2005/007063
    • 2005-03-03
    • CYMER, INC.PARTLO, William, N.BROWN, Daniel, J., W.FOMENKOV, Igor, V.BOWERING, Norbert, R.RETTIG, Curtis, L.MACFARLANE, Joseph, J.ERSHOV, Alexander, I.HANSSON, Bjorn, A., M.
    • PARTLO, William, N.BROWN, Daniel, J., W.FOMENKOV, Igor, V.BOWERING, Norbert, R.RETTIG, Curtis, L.MACFARLANE, Joseph, J.ERSHOV, Alexander, I.HANSSON, Bjorn, A., M.
    • G03F7/20H05G2/00
    • H05G2/003B82Y10/00G03F7/70033H01S3/0085H01S3/0092H01S3/1611H01S3/1653H01S3/2255H01S3/2325H01S3/2375H01S3/2383H05G2/005H05G2/008
    • An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation .pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
    • 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法,其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体,以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲,以具有相关联的较低临界密度,从而在由波长限定的等离子体区域内的等离子体内发生吸收 的等离子体照射脉冲与初始靶照射部位充分分离,以实现发射材料的压缩,并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域,以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外(“EUV”)光源可以包括激光初始靶照射脉冲发生机构,用目标照射脉冲照射等离子体引发目标,以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。
    • 17. 发明申请
    • EUV OPTICS
    • EUV光学
    • WO2008020965A2
    • 2008-02-21
    • PCT/US2007/016648
    • 2007-07-24
    • CYMER, INC.FOMENKOV, Igor, V.BOWERING, Norbert, R.
    • FOMENKOV, Igor, V.BOWERING, Norbert, R.
    • G02B5/08
    • G03F7/7015G02B5/0891G02B7/182G21K1/062Y10T29/49982
    • In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si 3 N 4 , B 4 C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions ^nd a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
    • 在第一方面中,公开了一种制造EUV光源反射镜的方法,其可以包括提供多个离散衬底的动作/步骤; 用各自的多层涂层涂覆每个基材; 将涂覆的基底固定在一种布置中,其中每个涂覆的基底都朝向共同的焦点; 之后抛光至少一个多层涂层。 另一方面,公开了一种与EUV光一起使用的光学器件,其可以包括衬底; 选自Si,C,Si 3 N 4,B 4 C,SiC和Cr的材料组中的平滑层, 使用高能量沉积条件和多层电介质涂层来沉积平滑层材料。 另一方面,用于EUV反射镜的耐腐蚀多层涂层可以包括Si和具有氮和第五周期过渡金属的化合物材料的交替层。
    • 18. 发明申请
    • SYSTEMS AND METHODS FOR EUV LIGHT SOURCE METROLOGY
    • EUV光源计量系统与方法
    • WO2007008470A2
    • 2007-01-18
    • PCT/US2006/025792
    • 2006-06-29
    • CYMER, INC.FOMENKOV, Igor, V.BOWERING, Norbert, R.HOFFMAN, Jerzy, R.
    • FOMENKOV, Igor, V.BOWERING, Norbert, R.HOFFMAN, Jerzy, R.
    • G01J1/42
    • G03F7/7085B82Y10/00G21K2201/061
    • Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi 2 /Si multi layer mirror.
    • 披露了EUV光源计量系统和方法。 在第一方面,用于测量EUV光源功率输出的系统可以包括沿着EUV光路径设置的光电子源材料,以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面,用于测量EUV光强度的系统可以包括多层反射镜,例如Mo / Si,沿着EUV光路径可弃,以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面,离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。