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1. 发明申请

WO2005091879A3 EUV LIGHT SOURCE 审中-公开
公开(公告)号：WO2005091879A3
公开(公告)日：2005-10-06
申请号：PCT/US2005/005935
申请日：2005-02-24
申请人： CYMER, INC. , PARTLO, William, N. , BOWERING, Norbert, R. , ERSHOV, Alexander, I. , FOMENKOV, Igor, V. , OLIVER, I., Roger , VIATELLA, John , JACQUES, Robert, N.
发明人： PARTLO, William, N. , BOWERING, Norbert, R. , ERSHOV, Alexander, I. , FOMENKOV, Igor, V. , OLIVER, I., Roger , VIATELLA, John , JACQUES, Robert, N.
IPC分类号： H01J35/20
摘要： A laser produced plasma extreme ultraviolet light source control system (10) includes a target delivery system (80) for delivering plasma initiation targets (20), an EUV light collection optic (40), a target tracking and feedback system (150), at least one imaging device (60, 62) for providing an image of a target stream track (92); a stream track error detector (120, 122) for detecting an error in the position of the target stream track (92) in at least one axis perpendicular to the target stream track (92).

2. 发明申请

WO2005089131A2 LPP EUV LIGHT SOURCE 审中-公开
标题翻译： LPP EUV光源
公开(公告)号：WO2005089131A2
公开(公告)日：2005-09-29
申请号：PCT/US2005/007063
申请日：2005-03-03
申请人： CYMER, INC. , PARTLO, William, N. , BROWN, Daniel, J., W. , FOMENKOV, Igor, V. , BOWERING, Norbert, R. , RETTIG, Curtis, L. , MACFARLANE, Joseph, J. , ERSHOV, Alexander, I. , HANSSON, Bjorn, A., M.
发明人： PARTLO, William, N. , BROWN, Daniel, J., W. , FOMENKOV, Igor, V. , BOWERING, Norbert, R. , RETTIG, Curtis, L. , MACFARLANE, Joseph, J. , ERSHOV, Alexander, I. , HANSSON, Bjorn, A., M.
IPC分类号： G03F7/20 , H05G2/00
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , H01S3/0085 , H01S3/0092 , H01S3/1611 , H01S3/1653 , H01S3/2255 , H01S3/2325 , H01S3/2375 , H01S3/2383 , H05G2/005 , H05G2/008
摘要： An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation .pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
摘要翻译：描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法，其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体，以将等离子体中的发射材料压缩到等离子体的发射区域。等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲，以具有相关联的较低临界密度，从而在由波长限定的等离子体区域内的等离子体内发生吸收的等离子体照射脉冲与初始靶照射部位充分分离，以实现发射材料的压缩，并且可以压缩发射区域。激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。可以从初始目标表面去除等离子体照射脉冲的沉积区域，以确保有利地发射等离子体的压缩。高转换效率的激光产生的等离子体极紫外（“EUV”）光源可以包括激光初始靶照射脉冲发生机构，用目标照射脉冲照射等离子体引发目标，以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。

3. 发明申请

WO2006020080A2 SYSTEMS AND METHODS FOR REDUCING THE INFLUENCE OF PLASMA-GENERATED DEBRIS ON THE INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE 审中-公开
标题翻译：用于减少等离子体生成物对EUV光源的内部成分的影响的系统和方法
公开(公告)号：WO2006020080A2
公开(公告)日：2006-02-23
申请号：PCT/US2005/025232
申请日：2005-07-15
申请人： CYMER, INC. , ERSHOV, Alexander, I. , MARX, William, F. , BOWERING, Norbert, R. , HANSSON, Bjorn, A., M. , KHODYKIN, Oleh , FOMENKOV, Igor, V. , PARTLO, William, N.
发明人： ERSHOV, Alexander, I. , MARX, William, F. , BOWERING, Norbert, R. , HANSSON, Bjorn, A., M. , KHODYKIN, Oleh , FOMENKOV, Igor, V. , PARTLO, William, N.
IPC分类号： H01J65/04
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/7085 , G03F7/70916 , G21K1/06 , G21K2201/06 , H05G2/001
摘要： Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.
摘要翻译：公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。在一个方面，提供了一种EUV计量监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

4. 发明申请

WO2009117048A2 SYSTEM AND METHODS FOR TARGET MATERIAL DELIVERY IN A LASER PRODUCED PLASMA EUV LIGHT SOURCE 审中-公开
标题翻译：用于激光产生的等离子体EUV光源中目标材料输送的系统和方法
公开(公告)号：WO2009117048A2
公开(公告)日：2009-09-24
申请号：PCT/US2009/000994
申请日：2009-02-17
申请人： CYMER, INC. , VASCHENKO, Georgiy, O. , BYKANOV, Alexander, N. , BOWERING, Norbert, R. , BRANDT, David, C. , ERSHOV, Alexander, I. , SIMMONS, Rodney, D. , KHODYKIN, Oleh, V. , FOMENKOV, Igor, V.
发明人： VASCHENKO, Georgiy, O. , BYKANOV, Alexander, N. , BOWERING, Norbert, R. , BRANDT, David, C. , ERSHOV, Alexander, I. , SIMMONS, Rodney, D. , KHODYKIN, Oleh, V. , FOMENKOV, Igor, V.
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , H05G2/006 , H05G2/008
摘要： Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要翻译：这里公开的设备可以包括EUV反射光学元件，该EUV反射光学元件具有限定旋转轴线和圆形外围的旋转表面。光学器件可以被定位成相对于水平面以非零角度倾斜轴线，并且在外围投影界定水平面中的区域的情况下建立水平面中的外围的垂直投影。该装置可以进一步包括输送目标材料的系统，该系统具有目标材料释放点，该目标材料释放点位于水平平面中并且位于该区域之外并且由周边投影和生成用于照射目标材料以产生激光束的激光束 EUV排放。

5. 发明申请

WO2010118146A1 ALIGNMENT LASER 审中-公开
标题翻译：对准激光
公开(公告)号：WO2010118146A1
公开(公告)日：2010-10-14
申请号：PCT/US2010/030258
申请日：2010-04-07
申请人： CYMER, INC. , FOMENKOV, Igor, V. , ERSHOV, Alexander, I. , PARTLO, William, N. , PAXTON, Jason, A. , KIM, Nam-Hyong , HOFFMAN, Jerzy, R.
发明人： FOMENKOV, Igor, V. , ERSHOV, Alexander, I. , PARTLO, William, N. , PAXTON, Jason, A. , KIM, Nam-Hyong , HOFFMAN, Jerzy, R.
IPC分类号： H01S3/091
CPC分类号： H01S3/2232 , G03F7/70033 , H01S3/0014 , H01S3/0407 , H01S3/041 , H01S3/086 , H01S3/2308 , H05G2/008
摘要： A method for producing extreme ultraviolet light includes producing a target material at a target location; supplying pump energy to a gain medium of at least one optical amplifier that has an amplification band to produce an amplified light beam; propagating the amplified light beam through the gain medium using one or more optical components of a set of optical components; delivering the amplified light beam to the target location using one or more optical components of the optical component set; producing with a guide laser a guide laser beam that has a wavelength outside of the amplification band of the gain medium and inside the wavelength range of the optical components; and directing the guide laser beam through the optical component set to thereby align one or more optical components of the optical component set.
摘要翻译：用于生产极紫外光的方法包括在目标位置产生目标材料; 向具有放大频带的至少一个光放大器的增益介质提供泵浦能量以产生放大的光束; 使用一组光学部件的一个或多个光学部件将放大的光束传播通过增益介质; 使用所述光学部件组的一个或多个光学部件将放大的光束传送到目标位置; 用导向激光器产生具有波长在增益介质的放大频带之外且在光学部件的波长范围内的引导激光束; 并且引导所述引导激光束通过所述光学部件组，从而对准所述光学部件组的一个或多个光学部件。

6. 发明申请

WO2010117861A1 SYSTEM, METHOD AND APPARATUS FOR ALIGNING AND SYNCHRONIZING TARGET MATERIAL FOR OPTIMUM EXTREME ULTRAVIOLET LIGHT OUTPUT 审中-公开
标题翻译：用于最佳超极紫外光输出的对准和同步目标材料的系统，方法和装置
公开(公告)号：WO2010117861A1
公开(公告)日：2010-10-14
申请号：PCT/US2010/029447
申请日：2010-03-31
申请人： CYMER, INC. , CHROBAK, Christopher, P. , PARTLO, William N. , FOMENKOV, Igor, V. , ERSHOV, Alexander, I. , CROUCH, James, H.
发明人： CHROBAK, Christopher, P. , PARTLO, William N. , FOMENKOV, Igor, V. , ERSHOV, Alexander, I. , CROUCH, James, H.
IPC分类号： G01J3/10
CPC分类号： H05G2/005 , G03F7/70033 , G21K5/00 , H05G2/003 , H05G2/006
摘要： An extreme ultraviolet light system includes a drive laser system, an extreme ultraviolet light chamber including an extreme ultraviolet light collector and a target material dispenser including a target material outlet capable of outputting a plurality of portions of target material along a target material path, wherein the target material outlet is adjustable. The extreme ultraviolet light system further includes a drive laser steering device, a detection system including at least one detector directed to detect a reflection of the drive laser reflected from the first one of the plurality of portions of target material and a controller coupled to the target material dispenser, the detector system and the drive laser steering device. The controller includes logic for detecting a location of a first one of the plurality of portions of target material from a first light reflected from the first target material.
摘要翻译：一种极紫外光系统包括驱动激光系统，包括极紫外光收集器的极紫外光室和包括能够沿目标材料路径输出多个目标材料部分的靶材料出口的目标材料分配器，其中，目标材料出口可调。所述极紫外光系统还包括驱动激光转向装置，所述检测系统包括至少一个检测器，所述检测器被引导以检测从所述目标材料的所述多个部分中的第一部分反射的所述驱动激光的反射，以及耦合到所述目标的控制器材料分配器，检测器系统和驱动激光转向装置。控制器包括用于从第一目标材料反射的第一光检测目标材料的多个部分中的第一部分的位置的逻辑。

7. 发明申请

WO2003021728A3 VERY NARROW BAND, TWO CHAMBER, HIGH REP RATE GAS DISCHARGE LASER SYSTEM 审中-公开
公开(公告)号：WO2003021728A3
公开(公告)日：2003-03-13
申请号：PCT/US2002/027925
申请日：2002-08-28
申请人： CYMER, INC. , KNOWLES, David, S. , BROWN, Daniel, J., W. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , SANDSTROM, Richard, L. , DAS, Plash, P. , ANDERSON, Stuart, L. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , ONKELS, Eckehard, D. , NESS, Richard, M. , SMITH, Scott, T. , HULBURD, William, G. , OICLES, Jeffrey
发明人： KNOWLES, David, S. , BROWN, Daniel, J., W. , BESAUCELE, Herve, A. , MYERS, David, W. , ERSHOV, Alexander, I. , PARTLO, William, N. , SANDSTROM, Richard, L. , DAS, Plash, P. , ANDERSON, Stuart, L. , FOMENKOV, Igor, V. , UJAZDOWSKI, Richard, C. , ONKELS, Eckehard, D. , NESS, Richard, M. , SMITH, Scott, T. , HULBURD, William, G. , OICLES, Jeffrey
IPC分类号： H01S3/11
摘要： An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

8. 发明申请

WO2012170144A1 SYSTEMS AND METHODS FOR BUFFER GAS FLOW STABILIZATION IN A LASER PRODUCED PLASMA LIGHT SOURCE 审中-公开
标题翻译：激光产生的等离子体光源中缓冲气体流动稳定的系统和方法
公开(公告)号：WO2012170144A1
公开(公告)日：2012-12-13
申请号：PCT/US2012/037363
申请日：2012-05-10
申请人： CYMER, INC. , FOMENKOV, Igor, V. , FLEUROV, Vladimir, B. , PARTLO, William, N. , ERSHOV, Alexander, I.
发明人： FOMENKOV, Igor, V. , FLEUROV, Vladimir, B. , PARTLO, William, N. , ERSHOV, Alexander, I.
IPC分类号： H05G2/00
CPC分类号： H05G2/005 , H05G2/008
摘要： An extreme-ultraviolet (EUV) light source comprising an optic, a target material, mid a laser beam passing through said optic along a beam path to irradiate said target material; The EUV light source further includes a system generating a gas flow directed toward said target material along said beam -path, said system having a tapering member surrounding a volume and a plurality of gas lines, each gas fine outputtmg a gas stream into said volume.
摘要翻译：一种极紫外（EUV）光源，包括光学元件，目标材料，沿着光束路径通过所述光学元件的激光束中间，以照射所述靶材料; EUV光源还包括产生沿着所述光束路径朝向所述目标材料的气流的系统，所述系统具有围绕体积和多个气体管线的锥形构件，每个气体精细地输出到所述体积中的气流。

9. 发明申请

WO2007002593A1 EUV LIGHT SOURCE COLLECTOR EROSION MITIGATION 审中-公开
标题翻译： EUV光源收集器腐蚀减轻
公开(公告)号：WO2007002593A1
公开(公告)日：2007-01-04
申请号：PCT/US2006/024822
申请日：2006-06-23
申请人： CYMER, INC. , PARTLO, William, N. , ERSHOV, Alexander, I. , FOMENKOV, Igor, V. , MYERS, David, W. , OLDHAM, William
发明人： PARTLO, William, N. , ERSHOV, Alexander, I. , FOMENKOV, Igor, V. , MYERS, David, W. , OLDHAM, William
IPC分类号： A61N5/06
CPC分类号： G21K1/062 , B82Y10/00 , G21K2201/061 , H05G2/003 , H05G2/005 , H05G2/008
摘要： An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
摘要翻译：公开了一种用于收集器的EUV光源收集器侵蚀缓解方法和装置，其包括多层反射镜收集器，其包括由由与在EUV发光等离子体中产生的材料的去除相互作用而被去除的封盖材料组成的收集器外表面。可以包括在EUV等离子体源材料内包括替换材料。替代材料可以包括与多层反射镜的封盖材料相同的材料。替代材料可以包括对EUV光的选定频带中的光基本上透明的材料，例如在等离子体源材料的等离子体中产生的EUV光的光谱。替代材料可以包括不易被蚀刻材料蚀刻的材料，用于从集电体例如卤素蚀刻剂去除沉积的等离子体源材料。

10. 发明申请

WO2004092693A2 COLLECTOR FOR EUV LIGHT SOURCE 审中-公开
标题翻译： EUV光源收集器
公开(公告)号：WO2004092693A2
公开(公告)日：2004-10-28
申请号：PCT/US2004/010972
申请日：2004-04-07
申请人： CYMER, INC. , PARTLO, William, N. , ALGOTS, J., Martin , BLUMENSTOCK, Gerry, M. , BOWERING, Norbert , ERSHOV, Alexander, I. , FOMENKOV, Igor, V. , PAN, Xiaojiang, J.
发明人： PARTLO, William, N. , ALGOTS, J., Martin , BLUMENSTOCK, Gerry, M. , BOWERING, Norbert , ERSHOV, Alexander, I. , FOMENKOV, Igor, V. , PAN, Xiaojiang, J.
IPC分类号： G01J
CPC分类号： H05G2/001 , B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G21K1/062
摘要： A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism. The gas is maintained at a pressure that in part determines the selected energy peak and the stimulating mechanism may create an influx of ions of the sputtering ion material that creates a sputter density of atoms of the second material from the reflector surface that equals or exceeds the influx rate of the plasma debris atoms of the second material. A sputtering rate may be selected for a given desired life of the reflecting surface. The reflecting surface may be capped. The collector may comprise an elliptical mirror and a debris shield which may comprise radially extending channels. The first material may be molybdenum, the second lithium and the ion material may be helium. The system may have a heater to evaporate the second material from the reflecting surface. The stimulating mechanism may be connected to the reflecting surface between ignition times. The reflecting surface may have barrier layers. The collector may be a spherical mirror in combination with grazing angle of incidence reflector shells, which may act as a spectral filter by selection of the layer material for multi-layer stacks on the reflector shells. The sputtering can be in combination with heating, the latter removing the lithium and the former removing compounds of lithium, and the sputtering may be by ions produced in the plasma rather than excited gas atoms.
摘要翻译：公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎片的方法和装置，其可以包括反射表面，其包括第一材料，并且所述碎屑包括第二材料和/或第二材料的化合物，所述系统并且方法可以包括受控的溅射离子源，其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构，所选择的离子化状态具有围绕选择的能量峰的分布，其具有溅射第二材料的可能性很高，并且溅射的可能性非常低材料。刺激机构可以包括RF或微波感应机构。气体保持在部分地决定所选择的能量峰值的压力下，并且刺激机构可以产生溅射离子材料的离子的流入，其从反射器表面产生第二材料的原子的溅射密度等于或超过第二种材料的等离子体碎片原子的流入速率。可以在反射表面的给定期望寿命期间选择溅射速率。反射面可以被盖住。收集器可以包括椭圆镜和可包括径向延伸通道的碎片屏蔽。第一材料可以是钼，第二锂和离子材料可以是氦。该系统可以具有从反射表面蒸发第二材料的加热器。刺激机构可以在点火时间之间连接到反射表面。反射表面可以具有阻挡层。收集器可以是与入射反射器壳的掠射角组合的球面镜，其可以通过选择反射器壳体上的多层堆叠的层材料来充当光谱滤光器。溅射可以与加热相结合，后者除去锂和前者除去锂的化合物，并且溅射可以是在等离子体中产生的离子而不是被激发的气体原子。

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