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91. 发明授权

US06465051B1 Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法
公开(公告)号：US06465051B1
公开(公告)日：2002-10-15
申请号：US08751899
申请日：1996-11-18
申请人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
发明人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
IPC分类号： H05H146
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
摘要翻译：本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

92. 发明授权

US06358124B1 Pad conditioner cleaning apparatus 有权
标题翻译：垫调节剂清洗装置
公开(公告)号：US06358124B1
公开(公告)日：2002-03-19
申请号：US09222180
申请日：1998-12-29
申请人： Raijiro Koga , Hiromi Tsuruta , Takashi Kumagai , Gee Hoey , Brian J. Brown , Boris Fishkin , Fred C. Redeker , Bruce Lu , Rex Lu , K. Y. Wang , Roland Shu
发明人： Raijiro Koga , Hiromi Tsuruta , Takashi Kumagai , Gee Hoey , Brian J. Brown , Boris Fishkin , Fred C. Redeker , Bruce Lu , Rex Lu , K. Y. Wang , Roland Shu
IPC分类号： B24B100
CPC分类号： B08B1/007 , B24B53/005 , B24B53/017 , H01L21/67051
摘要： A chemical mechanical polishing apparatus includes a pad conditioner having a conditioner head, a cleaning cup for receiving and cleaning the conditioner head of the pad conditioner, and a fluid dispenser for dispensing a cleaning fluid onto the conditioner head.
摘要翻译：化学机械抛光装置包括具有调节头的垫调节器，用于接收和清洁垫调节器的调节头的清洁杯，以及用于将清洁流体分配到调节头上的流体分配器。

93. 发明授权

US5984769A Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus 失效
公开(公告)号：US5984769A
公开(公告)日：1999-11-16
申请号：US3315
申请日：1998-01-06
申请人： Doyle E. Bennett , Thomas H. Osterheld , Fred C. Redeker , Ginetto Addiego
发明人： Doyle E. Bennett , Thomas H. Osterheld , Fred C. Redeker , Ginetto Addiego
IPC分类号： B24B37/26 , B24D13/14 , H01L21/304 , B24D11/00
CPC分类号： B24B37/26
摘要： A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

94. 发明授权

US08716210B2 Material for cleaning a substrate 有权
标题翻译：用于清洁基材的材料
公开(公告)号：US08716210B2
公开(公告)日：2014-05-06
申请号：US12948613
申请日：2010-11-17
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： H01L21/02 , C11D11/00 , C11D17/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B7/00 , C11D11/0047 , C11D17/0013 , C11D17/0017 , G03F1/82 , H01L21/02057 , H01L21/02096 , H01L21/67051
摘要： Material for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causes the particle to be removed along with the tri-state body.
摘要翻译：公开了使用三态体进行清洁的材料。提供了沉积有颗粒的基板。产生具有固体部分，液体部分和气体部分的三态体。在三态体上施加力以发出固体部分和颗粒之间的相互作用。将三态体与来自衬底表面的颗粒一起去除。固体部分和颗粒之间的相互作用导致颗粒与三态体一起被去除。

95. 发明授权

US08330072B2 System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology 有权
标题翻译：使用接近技术的干式，干式，低缺陷激光切割的系统方法和装置
公开(公告)号：US08330072B2
公开(公告)日：2012-12-11
申请号：US12687106
申请日：2010-01-13
申请人： John M. Boyd , Fred C. Redeker
发明人： John M. Boyd , Fred C. Redeker
IPC分类号： B23K26/14 , B23K26/16
CPC分类号： H01L21/02052 , B08B3/04 , B23K26/1224 , B23K26/146 , B23K26/40 , B23K2103/50 , H01L21/02057 , H01L21/3065 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67092 , H01L21/78
摘要： A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described. The method of dicing a substrate including placing a substrate in a substrate dicing system, forming a meniscus between a proximity head and a first surface of the substrate, dicing the substrate at a desired dicing location and simultaneously capturing any particles and contaminants generated by dicing the substrate within the meniscus, the meniscus including the desired dicing location and moving the meniscus in a desired dicing direction.
摘要翻译：基板处理系统包括第一可动表面张力梯度装置，切割装置和系统控制器。第一可移动表面张力梯度装置能够支撑第一弯液面内的第一过程。第一弯液面被支撑在第一表面张力梯度装置和基板的第一表面之间。能够相对于基板的第一表面移动的第一可动表面张力梯度装置。切割装置被定向到期望的切割位置。期望的切割位置被弯液面包围。系统控制器耦合到切割装置和表面张力梯度装置。系统控制器包括处理配方。还描述了用于切割基底的方法。一种切割衬底的方法，包括将衬底放置在衬底切割系统中，在接近头部和衬底的第一表面之间形成弯液面，将衬底切割在期望的切割位置，同时捕获通过切割所产生的任何颗粒和污染物底物在弯液面内，弯月面包括期望的切割位置，并且以期望的切割方向移动弯月面。

96. 发明授权

US08048283B2 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US08048283B2
公开(公告)日：2011-11-01
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D5/02
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

97. 发明授权

US07947157B2 Apparatus and method for depositing and planarizing thin films of semiconductor wafers 失效
标题翻译：用于沉积和平坦化半导体晶片的薄膜的装置和方法
公开(公告)号：US07947157B2
公开(公告)日：2011-05-24
申请号：US11494997
申请日：2006-07-28
申请人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
发明人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
IPC分类号： C25D5/06 , C25D5/04 , C25D17/14 , C25D17/12 , C25D7/12
CPC分类号： C25D17/10 , C25D5/026 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
摘要翻译：提供了一种用于在晶片的表面上沉积金属层的电镀设备。在一个示例中，能够被充电作为阳极的接近头放置在紧邻晶片表面的位置。在晶片和邻近头之间提供电镀液以产生局部金属电镀。

98. 发明申请

US20110065621A1 MATERIAL FOR CLEANING A SUBSTRATE 有权
标题翻译：清洁基材的材料
公开(公告)号：US20110065621A1
公开(公告)日：2011-03-17
申请号：US12948613
申请日：2010-11-17
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker
IPC分类号： C11D17/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B7/00 , C11D11/0047 , C11D17/0013 , C11D17/0017 , G03F1/82 , H01L21/02057 , H01L21/02096 , H01L21/67051
摘要： Material for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causes the particle to be removed along with the tri-state body.
摘要翻译：公开了使用三态体进行清洁的材料。提供了沉积有颗粒的基板。产生具有固体部分，液体部分和气体部分的三态体。在三态体上施加力以发出固体部分和颗粒之间的相互作用。将三态体与来自衬底表面的颗粒一起除去。固体部分和颗粒之间的相互作用导致颗粒与三态体一起被去除。

99. 发明授权

US07648584B2 Method and apparatus for removing contamination from substrate 失效
标题翻译：去除基材污染的方法和装置
公开(公告)号：US07648584B2
公开(公告)日：2010-01-19
申请号：US11336215
申请日：2006-01-20
申请人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
发明人： Erik M. Freer , John M. de Larios , Katrina Mikhaylichenko , Michael Ravkin , Mikhail Korolik , Fred C. Redeker , Clint Thomas , John Parks
IPC分类号： B08B7/00
CPC分类号： H01L21/02057 , B05D3/10 , B08B7/02 , C11D1/04 , C11D3/042 , C11D3/044 , C11D3/18 , C11D3/2079 , C11D3/222 , C11D3/225 , C11D3/3765 , C11D9/00 , C11D9/02 , C11D9/267 , C11D11/0047 , C11D17/0004 , C11D17/0013 , C11D17/0017 , C11D17/003 , C11D17/041 , C23G1/00 , C23G1/18 , G03F7/42 , G03F7/423 , H01L21/02052 , H01L21/02096 , H01L21/31133 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086
摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.
摘要翻译：清洁材料设置在基板上。清洁材料包括分散在液体介质中的固体组分。将力施加到液体介质中的固体组分以使固体组分接近存在于基底上的污染物。施加到固体组分的力可以通过液体介质中的不混溶组分施加。当固体组分被充分接近污染物时，在固体组分和污染物之间建立了相互作用。然后，将固体组分从衬底移开，使得与固体组分相互作用的污染物从衬底上除去。

100. 发明申请

US20090321250A1 Apparatus for Plating Semiconductor Wafers 有权
标题翻译：用于电镀半导体晶片的装置
公开(公告)号：US20090321250A1
公开(公告)日：2009-12-31
申请号：US12554860
申请日：2009-09-04
申请人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
发明人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
IPC分类号： C25D21/12
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要翻译：提供了一种用于电镀晶片表面的电镀设备。该晶片能够作为阴极充电。电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。当电镀头位于晶片表面上方时，由电压传感器对接收的数据被控制器使用以保持由阳极施加的基本恒定的电压。还提供了一种电镀晶片的方法。

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