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1. 发明授权

US07645364B2 Apparatus and method for plating semiconductor wafers 失效
标题翻译：用于电镀半导体晶片的装置和方法
公开(公告)号：US07645364B2
公开(公告)日：2010-01-12
申请号：US10882712
申请日：2004-06-30
申请人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
发明人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
IPC分类号： C25D21/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要翻译：提供了一种用于电镀晶片表面的电镀设备。该晶片能够作为阴极充电。电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。当晶片和电镀头被充电时，电镀头能够在晶片表面和电镀头之间实现金属电镀。电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。还提供了一种电镀晶片的方法。

2. 发明申请

US20110017605A1 PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMITY HEAD 有权
标题翻译：使用一体化接近头控制批量的临近处理
公开(公告)号：US20110017605A1
公开(公告)日：2011-01-27
申请号：US12899220
申请日：2010-10-06
申请人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
发明人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
IPC分类号： C25D5/00
CPC分类号： C25D17/00 , C25D17/001 , C25D17/002 , C25D21/08 , C25D21/12 , C25F3/12 , H01L21/67005 , H01L21/67219
摘要： Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.
摘要翻译：本文定义电镀基板的方法。一种方法包括提供在电镀液中具有电镀源的电镀组件和电镀液中的电镀促进剂，并且在电镀源和电镀促进剂之间限定电镀弯液面。电镀弯液面被包含在电镀组件的路径中。该方法还包括穿过基板穿过电镀组件的路径。当基板的表面上存在电镀弯液面时，将基板充电，使得电镀离子被吸引到基板的表面，其中穿过电镀组件的路径的基板能够跨越基板的表面进行电镀。并且，在形成电镀弯液面的路径中引起均匀的电荷，使得来自电镀源的电荷基本均匀地朝向电镀辅助器指向，因为充电的衬底移动通过电镀组件的路径。

3. 发明授权

US07648616B1 Apparatus and method for semiconductor wafer electroplanarization 有权
标题翻译：用于半导体晶片电平面化的装置和方法
公开(公告)号：US07648616B1
公开(公告)日：2010-01-19
申请号：US11394777
申请日：2006-03-31
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , Robert Maraschin
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , Robert Maraschin
IPC分类号： C25F7/00 , C25B9/08
CPC分类号： C25F7/00 , H01L21/67011
摘要： A number of apertures are defined within a wall of a chamber defined to maintain an electrolyte solution. A cation exchange membrane is disposed within the chamber over the number of apertures. The electrolyte solution pressure within the chamber causes the cation exchange membrane to extend through the apertures beyond an outer surface of the chamber. A cathode is disposed within the chamber. The cathode is maintained at a negative bias voltage relative to a top surface of a wafer to be planarized. When the top surface of the wafer is brought into proximity of the cation exchange membrane extending through the apertures, and a deionized water layer is disposed between the top surface of the wafer and the cation exchange membrane, a cathode half-cell is established such that metal cations are liberated from the top surface of the wafer and plated on the cathode in the chamber.
摘要翻译：在限定为维持电解质溶液的室的壁内限定了许多孔。阳离子交换膜在腔室内设置多个孔。室内的电解质溶液压力导致阳离子交换膜延伸穿过孔超过室的外表面。阴极设置在室内。阴极相对于要平坦化的晶片的顶表面保持在负偏压。当晶片的顶表面靠近延伸穿过孔的阳离子交换膜，并且在晶片的顶表面和阳离子交换膜之间设置去离子水层时，建立阴极半电池，使得金属阳离子从晶片的顶表面释放并镀在腔室中的阴极上。

4. 发明申请

US20090321250A1 Apparatus for Plating Semiconductor Wafers 有权
标题翻译：用于电镀半导体晶片的装置
公开(公告)号：US20090321250A1
公开(公告)日：2009-12-31
申请号：US12554860
申请日：2009-09-04
申请人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
发明人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
IPC分类号： C25D21/12
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要翻译：提供了一种用于电镀晶片表面的电镀设备。该晶片能够作为阴极充电。电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。当电镀头位于晶片表面上方时，由电压传感器对接收的数据被控制器使用以保持由阳极施加的基本恒定的电压。还提供了一种电镀晶片的方法。

5. 发明授权

US08221608B2 Proximity processing using controlled batch volume with an integrated proximity head 有权
标题翻译：使用集成接近头的受控批量的接近处理
公开(公告)号：US08221608B2
公开(公告)日：2012-07-17
申请号：US12899220
申请日：2010-10-06
申请人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
发明人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
IPC分类号： C25D5/02
CPC分类号： C25D17/00 , C25D17/001 , C25D17/002 , C25D21/08 , C25D21/12 , C25F3/12 , H01L21/67005 , H01L21/67219
摘要： Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.
摘要翻译：本文定义电镀基板的方法。一种方法包括提供在电镀液中具有电镀源的电镀组件和电镀液中的电镀促进剂，并且在电镀源和电镀促进剂之间限定电镀弯月面。电镀弯液面被包含在电镀组件的路径中。该方法还包括穿过基板穿过电镀组件的路径。当基板的表面上存在电镀弯液面时，将基板充电，使得电镀离子被吸引到基板的表面，其中穿过电镀组件的路径的基板能够跨越基板的表面进行电镀。并且，在形成电镀弯液面的路径中引起均匀的电荷，使得来自电镀源的电荷基本均匀地朝向电镀辅助器指向，因为充电的衬底移动通过电镀组件的路径。

6. 发明申请

US20080296166A1 PROXIMITY PROCESSING USING CONTROLLED BATCH VOLUME WITH AN INTEGRATED PROXIMTIY HEAD 有权
标题翻译：使用一体化接近头控制批量的临近处理
公开(公告)号：US20080296166A1
公开(公告)日：2008-12-04
申请号：US11539611
申请日：2006-10-06
申请人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
发明人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
IPC分类号： C25D5/34
CPC分类号： C25D17/00 , C25D17/001 , C25D17/002 , C25D21/08 , C25D21/12 , C25F3/12 , H01L21/67005 , H01L21/67219
摘要： A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided.
摘要翻译：提供了用于将金属材料电镀到基板表面上的电镀组件。电镀组件包括具有流体室，金属源和多孔插入物的输送单元。电镀组件还包括具有流体室和金属接收器的接收单元。接收单元还具有多孔插入物。输送单元的多孔插入件基本上与接收单元的多孔插入物对准并间隔开。金属接收器基本上与输送单元的多孔插入物对准，并且在输送单元和接收单元之间限定路径。其中，电镀弯液面能够在输送单元的多孔插入件和接收单元之间的路径中被限定，并且基板能够被移动通过电镀弯液面，以使得能够将金属材料电镀到基板的表面上。还提供了脱镀的实例。

7. 发明授权

US5805408A Electrostatic clamp with lip seal for clamping substrates 失效
标题翻译：用于夹持基板的带唇形密封的静电夹
公开(公告)号：US5805408A
公开(公告)日：1998-09-08
申请号：US577265
申请日：1995-12-22
申请人： Robert Maraschin , Paul Kevin Shufflebotham , Michael Scott Barnes
发明人： Robert Maraschin , Paul Kevin Shufflebotham , Michael Scott Barnes
IPC分类号： B25J15/06 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic clamping apparatus with lip seal for holding substrates in a vacuum processing chamber. The apparatus includes an electrostatic clamp, a sealing member surrounding the electrostatic clamp, and an edge ring surrounding the sealing member and holding the sealing member in place against the electrostatic clamp. The sealing member provides a seal between the electrostatic clamp and the substrate. This seal prevents the leakage of temperature control gas into the processing chamber and prevents process gas from reaching the electrostatic clamp and/or causing arcing in the chamber. In addition, by leaving a small gap between the sealing surface of the resilient sealing member and the edge of the electrostatic clamp, a helium distribution channel is created outside the electrostatic clamp top surface thus maximizing available contact area between the substrate and the clamp.
摘要翻译：具有用于将基板保持在真空处理室中的唇形密封件的静电夹紧装置。该装置包括静电夹持器，围绕静电夹具的密封构件以及围绕密封构件的边缘环，并将密封构件保持在静电夹具的适当位置上。密封构件在静电夹和衬底之间提供密封。该密封件防止温度控制气体泄漏到处理室中，并防止工艺气体到达静电夹持器和/或引起腔室中的电弧。此外，通过在弹性密封构件的密封表面和静电夹具的边缘之间留下小的间隙，在静电夹具顶表面的外部形成氦分配通道，从而最大化衬底和夹具之间的可用接触面积。

8. 发明申请

US20080271992A1 Apparatus and method for plating semiconductor wafers 失效
标题翻译：用于电镀半导体晶片的装置和方法
公开(公告)号：US20080271992A1
公开(公告)日：2008-11-06
申请号：US10882712
申请日：2004-06-30
申请人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
发明人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
IPC分类号： C25D17/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要翻译：提供了一种用于电镀晶片表面的电镀设备。该晶片能够作为阴极充电。电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。还提供了一种电镀晶片的方法。

9. 发明授权

US07862693B2 Apparatus for plating semiconductor wafers 有权
标题翻译：半导体晶片电镀设备
公开(公告)号：US07862693B2
公开(公告)日：2011-01-04
申请号：US12554860
申请日：2009-09-04
申请人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
发明人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
IPC分类号： C25D21/12 , C25D19/00 , C25B15/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要翻译：提供了一种用于电镀晶片表面的电镀设备。该晶片能够作为阴极充电。电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。还提供了一种电镀晶片的方法。

10. 发明授权

US07811423B2 Proximity processing using controlled batch volume with an integrated proximity head 有权
标题翻译：使用集成接近头的受控批量的接近处理
公开(公告)号：US07811423B2
公开(公告)日：2010-10-12
申请号：US11539611
申请日：2006-10-06
申请人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
发明人： Carl A. Woods , Yezdi N. Dordi , Jacob Wylie , Robert Maraschin
IPC分类号： C25D17/00
CPC分类号： C25D17/00 , C25D17/001 , C25D17/002 , C25D21/08 , C25D21/12 , C25F3/12 , H01L21/67005 , H01L21/67219
摘要： A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided.
摘要翻译：提供了用于将金属材料电镀到基板表面上的电镀组件。电镀组件包括具有流体室，金属源和多孔插入物的输送单元。电镀组件还包括具有流体室和金属接收器的接收单元。接收单元还具有多孔插入物。输送单元的多孔插入件基本上与接收单元的多孔插入物对准并间隔开。金属接收器基本上与输送单元的多孔插入物对准，并且在输送单元和接收单元之间限定路径。其中，电镀弯液面能够在输送单元的多孔插入件和接收单元之间的路径中被限定，并且基板能够被移动通过电镀弯液面，以使得能够将金属材料电镀到基板的表面上。还提供了脱镀的实例。

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