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1. 发明授权

US08048283B2 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US08048283B2
公开(公告)日：2011-11-01
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D5/02
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

2. 发明申请

US20100170803A1 Method and Apparatus for Plating Semiconductor Wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US20100170803A1
公开(公告)日：2010-07-08
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

3. 发明授权

US07704367B2 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US07704367B2
公开(公告)日：2010-04-27
申请号：US10879263
申请日：2004-06-28
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12 , H01L21/288 , B23H7/26 , C25B11/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

4. 发明申请

US20050284767A1 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US20050284767A1
公开(公告)日：2005-12-29
申请号：US10879263
申请日：2004-06-28
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred Redeker , Carl Woods
IPC分类号： C25D7/12 , H01L21/288
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

5. 发明授权

US09117860B2 Controlled ambient system for interface engineering 有权
标题翻译：接口工程控制环境系统
公开(公告)号：US09117860B2
公开(公告)日：2015-08-25
申请号：US11639752
申请日：2006-12-15
申请人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin W. Mooring , John Parks , William Thie , Fritz C. Redeker , Arthur M. Howald , Alan Schoepp , David Hemker , Carl Woods , Hyungsuk Alexander Yoon , Aleksander Owczarz
发明人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin W. Mooring , John Parks , William Thie , Fritz C. Redeker , Arthur M. Howald , Alan Schoepp , David Hemker , Carl Woods , Hyungsuk Alexander Yoon , Aleksander Owczarz
IPC分类号： H05H1/24 , C23C16/00 , H01L21/67 , H01L21/288 , H01L21/768
CPC分类号： H01L21/67225 , H01L21/288 , H01L21/6704 , H01L21/67167 , H01L21/67184 , H01L21/6723 , H01L21/76849
摘要： A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.
摘要翻译：公开了用于处理衬底的簇结构和方法。集群架构包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境控制传递模块和一个或多个湿式衬底处理模块被配置为管理第一环境环境。还提供耦合到实验室环境受控传输模块和一个或多个等离子体处理模块的真空传输模块。真空转移模块和一个或多个等离子体处理模块被配置成管理第二周边环境。并且，还包括耦合到真空传输模块和一个或多个环境处理模块的受控环境转移模块。受控环境传输模块和一个或多个环境处理模块被配置为管理第三环境环境。因此，集群架构使得能够在第一，第二或第三环境环境中以及在相关联的转换期间对衬底进行受控处理。

6. 发明授权

US07862693B2 Apparatus for plating semiconductor wafers 有权
标题翻译：半导体晶片电镀设备
公开(公告)号：US07862693B2
公开(公告)日：2011-01-04
申请号：US12554860
申请日：2009-09-04
申请人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
发明人： Yezdi N. Dordi , Fred C. Redeker , John M. Boyd , Robert Maraschin , Carl Woods
IPC分类号： C25D21/12 , C25D19/00 , C25B15/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885
摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要翻译：提供了一种用于电镀晶片表面的电镀设备。该晶片能够作为阴极充电。电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。还提供了一种电镀晶片的方法。

7. 发明授权

US07069937B2 Vertical proximity processor 失效
标题翻译：垂直接近处理器
公开(公告)号：US07069937B2
公开(公告)日：2006-07-04
申请号：US10404270
申请日：2003-03-31
申请人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
IPC分类号： B08B3/00
CPC分类号： C25D5/22 , B08B3/04 , C25D17/001 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a fluid meniscus on the surface of the vertically oriented substrate, and moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在垂直取向的衬底的表面上产生流体弯月面，并且使流体弯月面在垂直取向衬底的表面上移动以处理衬底的表面。

8. 发明授权

US07395611B2 System processing a substrate using dynamic liquid meniscus 失效
标题翻译：使用动态液体半月板处理衬底的系统
公开(公告)号：US07395611B2
公开(公告)日：2008-07-08
申请号：US11525278
申请日：2006-09-21
申请人： James P. Garcia , John M. de Larios , Michael Ravkin , Fred C. Redeker , Carl Woods
发明人： James P. Garcia , John M. de Larios , Michael Ravkin , Fred C. Redeker , Carl Woods
IPC分类号： F26B21/06
CPC分类号： C25D5/22 , C25D7/12 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.
摘要翻译：将弯液面从第一表面移动到第二表面的系统和方法包括在头部和第一表面之间形成弯液面。弯液面可以从第一表面移动到相邻的第二表面，相邻的第二表面平行于第一表面。移动弯液面的系统和方法也可以用于沿着基板的边缘移动弯月面。

9. 发明授权

US07350315B2 Edge wheel dry manifold 有权
标题翻译：边缘轮干歧管
公开(公告)号：US07350315B2
公开(公告)日：2008-04-01
申请号：US10745219
申请日：2003-12-22
申请人： Glenn W. Davis , Carl Woods , John Parks , Fred C. Redeker , Mike Ravkin , Michael L. Orbock
发明人： Glenn W. Davis , Carl Woods , John Parks , Fred C. Redeker , Mike Ravkin , Michael L. Orbock
IPC分类号： F26B13/30 , B08B5/04
CPC分类号： H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/68707
摘要： A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.
摘要翻译：用于干燥衬底的设备包括邻近边缘轮定位的真空歧管。边缘轮包括用于接收基板周边的边缘轮槽，并且边缘轮能够以所需的设定速度旋转基板。真空歧管包括具有限定在其中的一个或多个真空端口的邻近端。邻近端部至少部分地定位在边缘轮槽内，并且使用提供的真空去除积聚在边缘轮槽中的流体并且防止捕获的流体围绕衬底的周边边缘重新沉积。

10. 发明授权

US07127831B2 Methods and systems for processing a substrate using a dynamic liquid meniscus 有权
标题翻译：使用动态液体弯月面处理衬底的方法和系统
公开(公告)号：US07127831B2
公开(公告)日：2006-10-31
申请号：US11318019
申请日：2005-12-22
申请人： James P. Garcia , John M. de Larios , Michael Ravkin , Fred C. Redeker , Carl Woods
发明人： James P. Garcia , John M. de Larios , Michael Ravkin , Fred C. Redeker , Carl Woods
IPC分类号： F26B5/04
CPC分类号： C25D5/22 , C25D7/12 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.
摘要翻译：将弯液面从第一表面移动到第二表面的系统和方法包括在头部和第一表面之间形成弯液面。弯液面可以从第一表面移动到相邻的第二表面，相邻的第二表面平行于第一表面。移动弯液面的系统和方法也可以用于沿着基板的边缘移动弯月面。

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