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1. 发明申请

WO2016028335A1 CORNER ROUNDING CORRECTION FOR ELECTRON BEAM (EBEAM) DIRECT WRITE SYSTEM 审中-公开
标题翻译：电子束（EBEAM）直接写入系统的角膜矫正校正
公开(公告)号：WO2016028335A1
公开(公告)日：2016-02-25
申请号：PCT/US2014/071831
申请日：2014-12-22
申请人： INTEL CORPORATION
发明人： BORODOVSKY, Yan A.
IPC分类号： H01L21/027
CPC分类号： H01J37/045 , H01J37/3026 , H01J37/3174 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/30422 , H01J2237/30438 , H01J2237/31762 , H01J2237/31764 , H01J2237/31769
摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
摘要翻译：描述适用于涉及补充电子束光刻（CEBL）的光刻设备和方法。在一个示例中，用于电子束工具的消隐器孔径阵列（BAA）包括沿着第一方向的第一列开口，第一列开口的每个开口具有狗耳角。 BAA还包括沿着第一方向的第二列开口并且与第一列开口交错，第二列开口的每个开口具有狗耳角。第一和第二列开口一起形成在第一方向上具有间距的阵列。 BAA的扫描方向沿与第一方向垂直的第二方向。阵列的间距对应于用于与第二方向平行的取向的目标图案的最小间距布局的一半。

2. 发明申请

WO2015185576A1 METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS 审中-公开
标题翻译：用于计算IC制造工艺的度量的方法
公开(公告)号：WO2015185576A1
公开(公告)日：2015-12-10
申请号：PCT/EP2015/062301
申请日：2015-06-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , FAY, Aurélien , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： G03F7/20 , G03F1/36 , G03F1/80 , G06F17/50 , H01J37/317
CPC分类号： G03F7/705 , G03F1/36 , G03F1/80 , G03F7/70441 , G06F17/5081 , G06F2217/12 , H01J37/3174 , H01J37/3178 , Y02P90/265
摘要： The invention discloses a method for calculating the parameters of a resist model of an IC manufacturing process. According to an embodiment of the method of the invention, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. Advantageously, the deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.
摘要翻译：本发明公开了一种用于计算IC制造工艺的抗蚀剂模型的参数的方法。根据本发明的方法的一个实施例，代表目标设计的函数在整个目标设计中卷积，具有与具有移位角的变形函数复合的核函数。有利地，变形函数被其傅立叶级数展开代替，其顺序被选择为使得卷积积通过在要应用于目标设计的校正的公差内的旋转不变。或者，卷积的乘积可以被分解为基于所确定的角度而变化的基本核函数，使得可以将位移角的值的变形函数投影到几个基本核函数上，其中角度接近于位移角。

3. 发明申请

WO2015101537A1 CATHODE ARRANGEMENT, ELECTRON GUN, AND LITHOGRAPHY SYSTEM COMPRISING SUCH ELECTRON GUN 审中-公开
标题翻译：包括这种电子枪的阴极布置，电子枪和光刻系统
公开(公告)号：WO2015101537A1
公开(公告)日：2015-07-09
申请号：PCT/EP2014078993
申请日：2014-12-22
申请人： MAPPER LITHOGRAPHY IP BV
发明人： DINU-GÜRTLER LAURA , HOGERVORST ERIC PETRUS
IPC分类号： H01J3/02 , H01J1/28 , H01J1/46 , H01J37/063 , H01J37/07 , H01J37/075
CPC分类号： H01J37/3174 , G03F7/70058 , H01J1/15 , H01J1/28 , H01J3/027 , H01J3/029 , H01J37/075 , H01J37/3177 , H01J2229/481 , H01J2237/061
摘要： The invention relates to a cathode arrangement (20) comprising: a cathode body housing an emission surface (32) for emitting electrons in a longitudinal direction (Z), wherein the emission surface is bounded by an emission perimeter (35); a focusing electrode (40) at least partially enclosing the cathode body in a transversal direction and comprising an electron transmission aperture (44) for focusing the electrons emitted by the emission surface, wherein the aperture is bounded by an aperture perimeter (45), wherein the cathode body is moveably arranged within the focusing electrode over a maximum transversal distance (d1) from an aligned position (R0), and wherein the aperture perimeter transversally extends over the emission surface and beyond the emission perimeter over an overlap distance (d2) that exceeds the maximum transversal distance.
摘要翻译：本发明涉及一种阴极布置（20），包括：阴极主体，该阴极主体容纳用于沿纵向方向（Z）发射电子的发射表面（32），其中发射表面由发射周界（35）界定; 聚焦电极（40），所述聚焦电极（40）在横向方向上至少部分地包围所述阴极体并且包括用于聚焦由所述发射表面发射的所述电子的电子传输孔（44），其中所述孔由孔周边（45）所述阴极体在与所述对准位置（R 0）相距最大横向距离（d 1）的范围内可移动地布置在所述聚焦电极内，并且其中所述孔周边横跨所述发射表面并且在重叠距离（d 2）之上横跨所述发射周界横向延伸，超过最大横向距离。

4. 发明申请

WO2015063006A1 FREE FORM FRACTURING METHOD FOR ELECTRONIC OR OPTICAL LITHOGRAPHY USING RESIST THRESHOLD CONTROL 审中-公开
标题翻译：使用电阻阈值控制的电子或光学光刻的免费形式破碎方法
公开(公告)号：WO2015063006A1
公开(公告)日：2015-05-07
申请号：PCT/EP2014/072948
申请日：2014-10-27
申请人： ASELTA NANOGRAPHICS
发明人： MANAKLI, Serdar , MARTIN, Luc
IPC分类号： G03F1/78 , G03F7/20 , H01J37/317 , H01J37/302 , G03F1/00
CPC分类号： G03F1/70 , G03F1/68 , G03F7/70433 , G03F7/70558 , G06F17/5068 , H01J37/3026 , H01J37/3174 , H01J2237/31776
摘要： The invention discloses a computer implemented method of fracturing a free form target design into elementary shots to get a minimum number of shots for a defined roughness of the contour. The method includes determining a first set of shots which pave the target design, except for gaps, and then determining a second set of shots to fill or cover the gaps. The dose levels of the overlapping shots in the first or second sets of shots are determined so that the compounded dose is adequate in view of the resist threshold, taking into account the proximity effect which affects the actual imprint of the shots on the insulated target. Advantageously, a dose geometry modulation is applied. Advantageously, rounded shot prints are produced by shots which are not circular. Shots and rounded shot prints may or may not overlap. The degree of overlap may be determined as a function of a desired optimization of a fit criteria between a printed contour and the contour of the desired pattern. Placements and dimensions of the shots may be determined by a plurality of fit criteria between said printed contour and said contour of the desired pattern.
摘要翻译：本发明公开了一种计算机实现的方法，将自由形式目标设计分解为基本射击，以获得轮廓的规定粗糙度的最小射击次数。该方法包括确定除了间隙之外铺平目标设计的第一组拍摄，然后确定第二组拍摄以填充或覆盖间隙。确定第一组或第二组拍摄中的重叠拍摄的剂量水平，以便鉴于影响绝缘目标上的拍摄实际印记的邻近效应，鉴于抗蚀剂阈值，配合剂量是足够的。有利地，施加剂量几何调制。有利地，通过不是圆形的镜头产生圆形镜头照片。拍摄和圆角拍摄的照片可能重叠也可能不重叠。可以根据期望的图案的打印轮廓和轮廓之间的拟合标准的优化来确定重叠程度。拍摄的放置和尺寸可以由所述打印轮廓和所需图案的所述轮廓之间的多个拟合标准确定。

5. 发明申请

WO2014193991A1 USING WAFER GEOMETRY TO IMPROVE SCANNER CORRECTION EFFECTIVENESS FOR OVERLAY CONTROL 审中-公开
标题翻译：使用波形几何来提高扫描仪校正效果，进行覆盖控制
公开(公告)号：WO2014193991A1
公开(公告)日：2014-12-04
申请号：PCT/US2014/039846
申请日：2014-05-28
申请人： KLA-TENCOR CORPORATION
发明人： MACNAUGHTON, Craig , VEERARAGHAVAN, Sathish , VUKKADALA, Pradeep , SINHA, Jaydeep K. , AZORDEGAN, Amir
IPC分类号： H01L21/66
CPC分类号： G03F7/70616 , G03F7/70633 , G03F7/70783 , G03F9/7003 , H01J37/28 , H01J37/304 , H01J37/3172 , H01J37/3174 , H01J2237/221 , H01J2237/2814 , H01J2237/30472 , H01J2237/30483 , H01J2237/31701
摘要： Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled.
摘要翻译：公开了用于提供改进的扫描仪校正的系统和方法。根据本公开提供的扫描器校正可以被称为晶片几何感知扫描器校正。更具体地，利用晶片几何形状和/或晶片形状签名信息来改进扫描器校正。通过将晶片几何作为可能影响覆盖精度的错误源之一，可以获得更好的扫描仪校正，因为需要对一个较少的因素进行建模。

6. 发明申请

WO2014166970A1 CABINET FOR ELECTRONIC EQUIPMENT 审中-公开
标题翻译：电子设备柜
公开(公告)号：WO2014166970A1
公开(公告)日：2014-10-16
申请号：PCT/EP2014/057099
申请日：2014-04-08
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： VAN DEN BERGEN, David Johannes
IPC分类号： G03F7/20
CPC分类号： H05K7/20754 , G03F7/708 , G03F7/70991 , H01J37/3174 , H01J2237/31793 , H05K7/20145 , H05K7/20763
摘要： Cabinet (10) for accommodating electronic equipment (46). The cabinet comprises a casing (12) with an access opening (24) at a access side (23), and a second side (17) opposite to the access side, an electronic equipment rack (40a), a first plenum space (35) between the access side and the rack, and a channel (36) in fluid communication with the second side and the first plenum space. The cabinet encloses a first cooling medium (27) that is in thermal communication with the electronic equipment. A cooling arrangement (29) is provided at the second side, which comprises a flow generator (30) for generating a flow (Φf) of the first cooling medium from the first plenum space across the electronic equipment toward the second side, and a heat exchanger (31) for extracting heat from the first cooling medium. The first cooling medium is subsequently recirculated through the channel to the first plenum space.
摘要翻译：用于容纳电子设备（46）的机柜（10）。所述机柜包括在入口侧（23）具有进入开口（24）的壳体（12）和与所述进入侧相对的第二侧（17），电子设备支架（40a），第一增压空间（35））和与所述第二侧和所述第一集气室空间流体连通的通道（36）。机柜包围与电子设备热连通的第一冷却介质（27）。冷却装置（29）设置在第二侧，其包括流量发生器（30），用于从跨过电子设备的第一集气室向第二侧产生第一冷却介质的流量（Φf）交换器（31），用于从第一冷却介质提取热量。第一冷却介质随后通过通道再循环到第一集气室。

7. 发明申请

WO2014124041A2 INDIVIDUALLY SWITCHED FIELD EMISSION ARRAYS 审中-公开
标题翻译：个别开关场排放阵列
公开(公告)号：WO2014124041A2
公开(公告)日：2014-08-14
申请号：PCT/US2014014926
申请日：2014-02-05
申请人： GUERRERA STEPHEN ANGELO , AKINWANDE AKINTUNDE I
发明人： GUERRERA STEPHEN ANGELO , AKINWANDE AKINTUNDE I
CPC分类号： H01J37/073 , H01J37/065 , H01J37/3007 , H01J37/3174 , H01J37/3177 , H01J2237/0473 , H01J2237/063 , H01J2237/3175 , H01J2237/31781 , H01L21/00
摘要： An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.
摘要翻译：公开了一种电子束装置，其包括设置在至少一个场发射器阵列中的多个电流源元件。每个电流源元件可以是门控垂直晶体管，非门控垂直晶体管或接近光调制电流源的电流控制通道。电子束装置包括多个场发射器尖端，多个场发射器尖端中的每个场发射极尖端耦合到多个电流源元件的电流源元件。电子束装置被配置为允许选择性地激活一个或多个电流源元件。

8. 发明申请

WO2014113720A1 CHARGE DRAIN COATING FOR ELECTRON-OPTICAL MEMS 审中-公开
标题翻译：电光MEMS的充电排水涂层
公开(公告)号：WO2014113720A1
公开(公告)日：2014-07-24
申请号：PCT/US2014/012127
申请日：2014-01-17
申请人： KLA-TENCOR CORPORATION , ARGONNE NATIONAL LABORATORY
发明人： TONG, William, M. , BRODIE, Alan, D. , ELAM, Jeffrey , MANE, Anil
IPC分类号： H01L21/027
CPC分类号： C23C16/45529 , B81B3/0008 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , H01J37/026 , H01J37/06 , H01J37/12 , H01J37/3174 , H01J2237/1205 , H01J2237/31794
摘要： A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.
摘要翻译：公开了一种与电荷放电涂层相关的系统和方法。可以将电荷漏极涂层施加到电子 - 光学器件的表面以排出与电荷漏极涂层接触的电子，使得电子 - 电子器件的性能不会受到电子电荷积聚的阻碍。电荷漏极涂层可以包括聚结成嵌入在高介电绝缘材料内的簇的掺杂材料。电荷漏极涂层可以沉积到电子 - 光学器件的小透镜的内表面上。

9. 发明申请

WO2014054690A1 露光装置及び露光方法、並びにデバイス製造方法审中-公开
标题翻译：曝光装置和曝光方法以及装置制造方法
公开(公告)号：WO2014054690A1
公开(公告)日：2014-04-10
申请号：PCT/JP2013/076820
申请日：2013-10-02
申请人：株式会社ニコン
发明人：柴崎　祐一
IPC分类号： H01L21/027 , G01B11/00 , G01B11/26 , G03F7/20 , H01L21/68
CPC分类号： G03F7/70133 , G01B11/00 , G01B11/26 , G03F7/70058 , G03F7/70775 , H01J37/3045 , H01J37/3174 , H01J2237/202 , H01J2237/3175
摘要：　ステージ（ＷＳＴ１）上面の中心を原点とする第１、第２、第３及び第４象限のコーナー部分に、各３つの２次元ヘッド（６０ｉ、６０ｉａ、６０ｉｂ（ｉ＝１～４））を設ける。４つのヘッド（６０ｉ（ｉ＝１、２、３、４））のうち、ステージ（ＷＳＴ１）の上方に設けられたスケール板（２１）の２次元グレーティング（ＲＧ）に対向する３つのヘッド（６０ｉ）を用いてステージ（ＷＳＴ１）の位置を計測しつつ、ステージ（ＷＳＴ１）を駆動し、駆動中に、その３つのヘッドがそれぞれ属するヘッド群（６１ｉ）に属する各３つのヘッドのヘッド（６０ｉ）に対する残り２つのヘッド（６０ｉａ、６０ｉｂ）の計測方向に関する計測値の差分のデータを取り込み、その差分のデータを用いて、２次元グレーティング（ＲＧ）の計測方向に関するグリッド誤差を較正する。
摘要翻译：本发明提供了在第一，第二，第三和第四象限中的每一个的角部处的三个2D头（60i，60ia，60ib（i = 1-4）），其位于台的表面上的中心（WST1 ）。在为舞台（WST1）供电时，通过使用四个头（60i（i = 1,2,3,4）），三个头（60i）面向2D光栅（在位于载物台（WST1）上方的刻度板（21）的RG（RG））的同时，在除了头（60i）之外的其余两个头（60ia，60ib）的测量方向上捕获与测量值相差的差分数据，属于三个头部所属的头组（61i）的每组三个头部，使用该差分数据，校准2D光栅（RG）的测量方向的网格误差。

10. 发明申请

WO2013139878A3 ARRANGEMENT AND METHOD FOR TRANSPORTING RADICALS 审中-公开
标题翻译：运输基数的配置和方法
公开(公告)号：WO2013139878A3
公开(公告)日：2013-12-27
申请号：PCT/EP2013055865
申请日：2013-03-20
申请人： MAPPER LITHOGRAPHY IP BV
发明人： KRUIT PIETER , SMITS MARC
IPC分类号： G03F7/20 , H01J37/317 , H01J37/32 , H01L21/67
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , F15D1/025 , G03F7/70925 , G21K2201/06 , H01J9/38 , H01J37/3007 , H01J37/3177 , H01J37/32862 , H01J2237/006 , H01J2237/022 , H01J2237/327 , Y10T137/2082 , Y10T137/87571
摘要： The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber (2) in which a plasma may be formed. The chamber has an inlet (5) for receiving an input gas, and one or more outlets (6) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device (40) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.
摘要翻译：本发明涉及用于运输自由基的装置。该装置包括等离子体发生器和引导体。等离子体发生器包括其中可以形成等离子体的腔室（2）。腔室具有用于接收输入气体的入口（5）以及用于去除在其中产生的等离子体和自由基中的至少一个的一个或多个出口（6）。引导体是中空的，并且布置成用于将在等离子体中形成的自由基朝向要去除污染物沉积的区域或体积引导。腔室入口连接到压力装置（40），用于向腔室内提供脉冲压力，从而在引导主体中产生流动。

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