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1. 发明申请

WO2014001886A1 FILM OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL, METHOD OF MAKING SAME AND ORIENTING/UNDERCOOLING MOLDS THEREFOR, AND ELECTRONIC DEVICE 审中-公开
标题翻译：多晶半导体材料的薄膜，其制备方法及其制备方法和电子设备
公开(公告)号：WO2014001886A1
公开(公告)日：2014-01-03
申请号：PCT/IB2013/001370
申请日：2013-06-27
申请人： RGS DEVELOPMENT B.V.
发明人： LEEMPOEL, Patrick , PICHON, Pierre-Yves , SCHÖNECKER, Axel
IPC分类号： C30B15/00 , C30B28/10 , H01L31/18
CPC分类号： C30B15/007 , C30B28/10 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A film of polycrystalline semiconductor material, a method of making the film and orienting/undercooling molds that are useful in the method, and an electronic device comprising or prepared from the film. An orienting/undercooling mold that is impermeable to gas flow, the orienting/undercooling mold comprising a first orienting/undercooling surface configured with a basal surface consisting essentially of a low nucleation-potency material and with a plurality of contact points, at least some of the plurality of contact points consisting essentially of a monocrystalline semiconductor material for orienting crystal growth and controlling positions of nucleation sites on the orienting/undercooling surface, and any remainder of the plurality of contact points consisting essentially of a low nucleation-potency material for controlling heat transfer without functioning as nucleation sites; and wherein crystal lattices of at least 80 percent of the total number of the contact points consisting essentially of a monocrystalline semiconductor material are oriented parallel to each other.
摘要翻译：多晶半导体材料薄膜，制造该方法中有用的薄膜和定向/过冷模具的方法，以及包括该薄膜或由薄膜制备的电子装置。取向/过冷模具包括第一取向/过冷表面，该第一取向/过冷模具配置有基本表面，该基础表面基本上由低成核效力材料组成，并具有多个接触点，至少一些多个接触点基本上由用于取向晶体生长和控制取向/过冷表面上的成核位置的位置的单晶半导体材料组成，并且多个接触点的任何其余部分基本上由用于控制热的低成核效应材料组成转移而不起核化作用; 并且其中基本上由单晶半导体材料组成的接触点总数的至少80％的晶格彼此平行取向。

2. 发明申请

WO2012071341A3 METHOD FOR REDUCING THE RANGE IN RESISTIVITIES OF SEMICONDUCTOR CRYSTALLINE SHEETS GROWN IN A MULTI-LANE FURNACE 审中-公开
标题翻译：减少在多线炉中生长的半导体晶体片材的溶解范围的方法
公开(公告)号：WO2012071341A3
公开(公告)日：2012-10-04
申请号：PCT/US2011061694
申请日：2011-11-21
申请人： EVERGREEN SOLAR INC , KERNAN BRIAN D , TARNOWSKI GARY J , HUANG WEIDONG , REITSMA SCOTT , RICHARDSON CHRISTINE
发明人： KERNAN BRIAN D , TARNOWSKI GARY J , HUANG WEIDONG , REITSMA SCOTT , RICHARDSON CHRISTINE
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： C30B29/06 , C30B15/007
摘要： A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.
摘要翻译：一种用于降低多道生长炉中产生的半导体晶体片的电阻率范围的方法。提供了一种用于生长晶体片的炉，其包括具有材料引入区和包括多个晶体片生长道的晶体生长区的坩埚。坩埚被配置为从材料引入区朝向离材料引入区最远的晶体片生长道产生大体上一个方向的材料流。将掺杂有大于痕量的p型掺杂剂和n型掺杂剂的硅引入到材料引入区域中。掺杂的硅在称为熔体的坩埚中形成熔融物质。晶体片在晶体生长区的每个生长线由熔体形成。共掺杂硅原料可以减少每条通道中形成的结晶片之间电阻率的变化。

3. 发明申请

WO2012116202A2 WAFER FURNACE WITH VARIABLE FLOW GAS JETS 审中-公开
标题翻译：具有可变流量气体喷射器的波炉
公开(公告)号：WO2012116202A2
公开(公告)日：2012-08-30
申请号：PCT/US2012026352
申请日：2012-02-23
申请人： EVERGREEN SOLAR INC , VAN GLABBEEK LEO , LIU LIANGHONG , HUANG WEIDONG , HITCHCOCK DAVID , YAMARTINO STEPHEN
发明人： VAN GLABBEEK LEO , LIU LIANGHONG , HUANG WEIDONG , HITCHCOCK DAVID , YAMARTINO STEPHEN
IPC分类号： B29C39/14 , B29C51/42
CPC分类号： C30B15/007 , C30B15/005 , C30B29/06
摘要： A method of forming a sheet wafer 1) passes at least two filaments through a molten material to produce a partially formed sheet wafer, 2) directs a cooling fluid at a flow rate toward the partially formed sheet wafer to convectively cool a given portion of the partially formed sheet wafer, and 3) monitors the thickness of the given portion of the partially formed sheet wafer. To ensure appropriate thicknesses of the wafer, the method controls the flow rate of the cooling fluid as a function of the thickness of the given portion of the partially formed sheet wafer.
摘要翻译：一种形成片状晶片的方法1）使至少两根细丝通过熔融材料，以产生部分成形的片状晶片，2）以朝向部分成形片状晶片的流速引导冷却流体对流地冷却部分形成的片状晶片，以及3）监视部分成形的片状晶片的给定部分的厚度。为了确保晶片的适当厚度，该方法控制冷却流体的流量作为部分成形的薄片晶片的给定部分的厚度的函数。

4. 发明申请

WO2011096815A1 APPARATUS AND METHOD FOR THE PRODUCTION OF SEMICONDUCTOR MATERIAL FOILS 审中-公开
标题翻译：用于生产半导体材料箔的装置和方法
公开(公告)号：WO2011096815A1
公开(公告)日：2011-08-11
申请号：PCT/NL2011/050087
申请日：2011-02-08
申请人： RGS DEVELOPMENT B.V. , SCHÖNECKER, Axel, Georg
发明人： SCHÖNECKER, Axel, Georg
IPC分类号： C30B28/10 , C30B15/00 , C30B29/06
CPC分类号： B22D11/0631 , C30B11/001 , C30B15/007 , C30B15/24 , C30B28/10 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T428/12431
摘要： A casting device for producing semiconductor material foil includes a casting frame and a substrate band. The casting frame is arranged for holding a molten semiconductor material and includes sidewalls of which an exit sidewall is located at an output position for the semiconductor material foil. The exit side wall is provided with an exit slit. The casting device further includes a local force exerting means to exert at the location of the exit slit a locally enlarged external force on the molten semiconductor material to enlarge an outer pressure on the molten material at the exit slit.
摘要翻译：用于制造半导体材料箔的铸造装置包括铸造框架和衬底带。铸造框架布置用于保持熔融的半导体材料，并且其包括出口侧壁位于半导体材料箔的输出位置处的侧壁。出口侧壁设有出口狭缝。铸造装置还包括局部力施加装置，以在出口狭缝的位置上施加局部增大的熔融半导体材料上的外力，以增大出口狭缝处熔融材料的外部压力。

5. 发明申请

WO2011053564A1 METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL 审中-公开
标题翻译：制造半导体材料的方法
公开(公告)号：WO2011053564A1
公开(公告)日：2011-05-05
申请号：PCT/US2010/054024
申请日：2010-10-26
申请人： CORNING INCORPORATED , COOK, Glen B. , MAZUMDER, Prantik , SUMAN, Balram , THOMAS, Christopher S.
发明人： COOK, Glen B. , MAZUMDER, Prantik , SUMAN, Balram , THOMAS, Christopher S.
IPC分类号： C30B15/00 , C30B19/06 , C30B29/06
CPC分类号： C30B15/007 , C30B19/062 , C30B29/06
摘要： A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.
摘要翻译：制造半导体材料的方法包括从熔融半导体材料的熔体中取出已经在模具的外表面上形成半导体材料的固体层的固体模具。在退出动作期间，控制一个或多个温度，力和相对退出速率，以便在退出期间在固体层上形成的半导体材料的固体覆层中实现一个或多个期望属性。

6. 发明申请

WO2008154654A1 REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES 审中-公开
标题翻译： RIBBON水晶拉丝炉的可拆卸热控制
公开(公告)号：WO2008154654A1
公开(公告)日：2008-12-18
申请号：PCT/US2008/066865
申请日：2008-06-13
申请人： EVERGREEN SOLAR, INC. , WALLACE, Richard , HARVEY, David , HUANG, Weidong , REITSMA, Scott , RICHARDSON, Christine
发明人： WALLACE, Richard , HARVEY, David , HUANG, Weidong , REITSMA, Scott , RICHARDSON, Christine
IPC分类号： C30B15/14 , C30B15/10
CPC分类号： C30B15/007 , C30B15/14 , Y10T29/49826 , Y10T117/10 , Y10T117/1044 , Y10T117/1068
摘要： A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.
摘要翻译：带状拉晶炉具有基部绝缘和可拆卸地连接到基础绝缘体的衬里绝缘。衬垫绝缘体的至少一部分形成用于容纳坩埚的内部。

7. 发明申请

WO0046430A2 SILICON RIBBON GROWTH DENDRITE THICKNESS CONTROL SYSTEM 审中-公开
标题翻译：硅胶生长深度厚度控制系统
公开(公告)号：WO0046430A2
公开(公告)日：2000-08-10
申请号：PCT/US9902254
申请日：1999-02-02
申请人： EBARA SOLAR INC
发明人： EASOZ JOHN R , MUNSHOWER BARRY
IPC分类号： C30B29/06 , C30B15/00 , C30B15/22 , C30B15/26 , C30B29/64 , C30B
CPC分类号： C30B15/007 , C30B15/22 , C30B15/26 , C30B15/34 , C30B29/06
摘要： A method and system for controlling the thickness of a pair of dendrites in a dendritic silicon web growth process to improve dendritic silicon web production. An image of each dendrite in a web emerging from a silicon melt in a furnace is produced by a pair of cameras focused on the dendrite pair. The dendrite images are digitized, the average thickness of the dendrites is calculated, and compared to set point parameters. The average difference between the dendrite thicknesses and the set point parameters is used to control the overall furnace temperature, while the differences between the thickness of each pair are used to control the lateral temperature distribution in the furnace in order to maintain the dendrite thickness within predetermined limits. The method can be used in a closed loop configuration to automatically control the furnace temperature and lateral temperature distribution; or in an open loop configuration to provide visible feedback information to an operator who manually adjusts the furnace temperature conditions.
摘要翻译：一种用于控制树枝状硅纤维网生长过程中一对枝状物的厚度以改善树枝状硅纤维网生产的方法和系统。在熔炉中从硅熔体中出现的网中的每个枝晶的图像由聚焦在枝晶对上的一对照相机产生。将枝晶图像数字化，计算枝晶的平均厚度，并与设定点参数进行比较。使用枝晶厚度和设定点参数之间的平均差异来控制整体炉温，而每对厚度之间的差异用于控制炉中的侧向温度分布，以便将枝晶厚度保持在预定的范围内限制。该方法可用于闭环配置，自动控制炉温和横向温度分布; 或以开环结构提供可手动调节炉温条件的操作者的可见反馈信息。

8. 发明申请

WO2012121972A3 SHEET WAFER GROWTH STABILIZATION 审中-公开
标题翻译：薄片生长稳定
公开(公告)号：WO2012121972A3
公开(公告)日：2015-06-11
申请号：PCT/US2012027280
申请日：2012-03-01
申请人： EVERGREEN SOLAR INC , KERNAN BRIAN D , HUANG WEIDONG
发明人： KERNAN BRIAN D , HUANG WEIDONG
IPC分类号： C30B15/00
CPC分类号： C30B15/007 , C30B15/34 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： An apparatus for forming a sheet wafer has an enclosure forming an interior chamber, and a crucible within the interior chamber and having a top surface. The crucible is configured to contain a volume of molten material. The apparatus also has a wafer guide spaced from the top surface of the crucible and within the interior chamber. The wafer guide forms a channel for passing a growing sheet wafer.
摘要翻译：用于形成片状晶片的装置具有形成内部腔室的外壳和位于内部腔室内并具有顶部表面的坩埚。坩埚被配置成容纳一定体积的熔融材料。该设备还具有与坩埚的顶表面间隔开并在内室内的晶片引导件。晶片引导件形成用于通过生长片材晶片的通道。

9. 发明申请

WO2014001888A1 FILM OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL, METHOD OF MAKING SAME AND UNDERCOOLING MOLDS THEREFOR, AND ELECTRONIC DEVICE 审中-公开
标题翻译：多晶半导体材料的薄膜及其制备方法及其制备方法及电子设备
公开(公告)号：WO2014001888A1
公开(公告)日：2014-01-03
申请号：PCT/IB2013/001372
申请日：2013-06-27
申请人： RGS DEVELOPMENT B.V.
发明人： HOEK, Eelko , LEMMPOEL, Patrick , PICHON, Pierre-Yves , SCHÖNECKER, Axel
IPC分类号： C30B15/00 , C30B28/10 , H01L31/18
CPC分类号： C30B15/007 , C30B28/10 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A film of polycrystalline semiconductor material, a method of making the film and undercooling molds that are useful in the method, and an electronic device comprising or prepared from the film. An undercooling mold comprising a first undercooling surface configured with contact points consisting essentially of a low nucleation-potency material for localized undercooling and the undercooling mold is characterizable as being useful for favoring laterally growing a film of polycrystalline silicon from a melt of the silicon according to Test Method 1 such that average lateral grain size of the crystals is greater than 2 times thickness of the film, wherein average lateral grain size is measured according to ASTM E112-10.
摘要翻译：多晶半导体材料薄膜，制造该方法中有用的薄膜和过冷模具的方法，以及包括该薄膜或由薄膜制备的电子器件。一个过冷却模具包括第一过冷表面，第一过冷表面被构造成基本上由用于局部过冷的低成核效应材料和过冷模具组成的接触点，其特征在于可用于有利于从硅的熔体横向生长多晶硅膜，根据测试方法1，使得晶体的平均横向晶粒尺寸大于膜厚度的2倍，其中平均横向晶粒尺寸根据ASTM E112-10测量。

10. 发明申请

WO2012075306A2 MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET 审中-公开
标题翻译：使用自由插入片材制作材料的半导体器件
公开(公告)号：WO2012075306A2
公开(公告)日：2012-06-07
申请号：PCT/US2011/062914
申请日：2011-12-01
申请人： 1366 TECHNOLOGIES INC. , JONCZYK, Ralf , SACHS, Emanuel, M.
发明人： JONCZYK, Ralf , SACHS, Emanuel, M.
IPC分类号： H01L21/28
CPC分类号： H01L31/182 , C04B41/4539 , C04B41/5096 , C30B11/002 , C30B15/00 , C30B15/007 , C30B15/32 , C30B29/06 , H01L21/02002 , H01L21/02532 , H01L31/1804 , Y02E10/546 , Y02P70/521
摘要： An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are free to expand and contract relatively independently of the forming surface.
摘要翻译：插入片可用于制造诸如硅的半导体本体，例如用于太阳能电池。它是独立的，非常薄的，柔性的，多孔的并且能够耐受熔融半导体的化学和热环境而不降解。它通常是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。设置在模板的成形表面和将形成半导体本体的熔融材料之间。它可以固定到成形表面或沉积在熔体上。插入片抑制晶粒成核，并限制来自熔体的热流。它促进半导体主体与成形表面的分离。它可以在使用之前进行制造。由于独立且不粘附到成型表面，CTE的失配问题被最小化。插入片和半导体本体相对于成形表面相对自由地膨胀和收缩。

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