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1. 发明申请

WO2011053564A1 METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL 审中-公开
标题翻译：制造半导体材料的方法
公开(公告)号：WO2011053564A1
公开(公告)日：2011-05-05
申请号：PCT/US2010/054024
申请日：2010-10-26
申请人： CORNING INCORPORATED , COOK, Glen B. , MAZUMDER, Prantik , SUMAN, Balram , THOMAS, Christopher S.
发明人： COOK, Glen B. , MAZUMDER, Prantik , SUMAN, Balram , THOMAS, Christopher S.
IPC分类号： C30B15/00 , C30B19/06 , C30B29/06
CPC分类号： C30B15/007 , C30B19/062 , C30B29/06
摘要： A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.
摘要翻译：制造半导体材料的方法包括从熔融半导体材料的熔体中取出已经在模具的外表面上形成半导体材料的固体层的固体模具。在退出动作期间，控制一个或多个温度，力和相对退出速率，以便在退出期间在固体层上形成的半导体材料的固体覆层中实现一个或多个期望属性。

2. 发明申请

WO2009108358A1 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF PURE OR DOPED SEMICONDUCTING MATERIAL 审中-公开
标题翻译：制备纯或半导体材料的不合格品的方法
公开(公告)号：WO2009108358A1
公开(公告)日：2009-09-03
申请号：PCT/US2009/001268
申请日：2009-02-27
申请人： CORNING INCORPORATED , COOK, Glen, B , MAZUMDER, Prantik , SONI, Kamal, K , SUMAN, Balram , THOMAS, Christopher, S , VENKATARAMAN, Natesan
发明人： COOK, Glen, B , MAZUMDER, Prantik , SONI, Kamal, K , SUMAN, Balram , THOMAS, Christopher, S , VENKATARAMAN, Natesan
IPC分类号： H01L21/208 , C30B15/00 , C30B28/04 , C30B29/06
CPC分类号： C30B29/06 , C30B15/007 , C30B28/04
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。

3. 发明申请

WO2010099297A1 METHODS OF MAKING AN UNSUPPORTED ARTICLE OF SEMICONDUCTING MATERIAL BY CONTROLLED UNDERCOOLING 审中-公开
标题翻译：通过控制下的方法制造半导体材料不受限制的物品
公开(公告)号：WO2010099297A1
公开(公告)日：2010-09-02
申请号：PCT/US2010/025381
申请日：2010-02-25
申请人： CORNING INCORPORATED , COOK, Glen, B , MAZUMDER, Prantik , SUMAN, Balram
发明人： COOK, Glen, B , MAZUMDER, Prantik , SUMAN, Balram
IPC分类号： C30B28/10 , C30B28/06 , C30B15/00
CPC分类号： C30B15/007 , C30B28/10 , C30B29/06
摘要： The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as semiconducting material that may be useful in making photovoltaic cells.
摘要翻译：本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料。

4. 发明申请

WO2012015594A8 MOLD SHAPE TO OPTIMIZE THICKNESS UNIFORMITY OF SILICON FILM 审中-公开
公开(公告)号：WO2012015594A8
公开(公告)日：2012-02-02
申请号：PCT/US2011/043774
申请日：2011-07-13
申请人： CORNING INCORPORATED , COOK, Glen, B , MAZUMDER, Prantik , SUMAN, Balram
发明人： COOK, Glen, B , MAZUMDER, Prantik , SUMAN, Balram
IPC分类号： C30B11/00 , C30B15/00 , C30B19/06 , C30B29/06 , H01L31/18
摘要： A method of making a solid layer of a semiconducting material (140) involves selecting a mold (100) having a leading edge thickness (104) and a different trailing edge thickness (106) such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material (120), a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material (120) to form a solid layer of semiconducting material over an external surface (102) of the mold.

5. 发明申请

WO2011071857A1 HIGH THROUGHPUT RECRYSTALLIZATION OF SEMICONDUCTING MATERIALS 审中-公开
标题翻译：半导体材料的高通量再结晶
公开(公告)号：WO2011071857A1
公开(公告)日：2011-06-16
申请号：PCT/US2010/059201
申请日：2010-12-07
申请人： CORNING INCORPORATED , MAZUMDER, Prantik , SUMAN, Balram , COOK, Glen, B. , VENKATARAMAN, Natesan
发明人： MAZUMDER, Prantik , SUMAN, Balram , COOK, Glen, B. , VENKATARAMAN, Natesan
IPC分类号： C30B11/00 , C30B29/64 , H01L31/18 , H01L21/02 , C30B29/02 , C30B29/06 , C30B29/16 , C30B29/42 , C30B29/52 , C30B29/08
CPC分类号： C30B29/64 , C30B11/003 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/16 , C30B29/42 , C30B29/52 , H01L21/02532 , H01L21/02667 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.
摘要翻译：公开了制备和/或处理半导体材料制品的方法。在各种方法中，提供了半导体材料的第一制品，第一半导体材料被充分加热以熔化半导体材料，并且熔化的半导体材料在基本平行于熔融半导体制品的最短尺寸的方向上固化材料。还公开了通过本文所述方法制备的半导体材料制品。

6. 发明申请

WO2014058701A1 SEMICONDUCTING MATERIAL LAMINATE AND SHEET 审中-公开
标题翻译：半导体材料层压板
公开(公告)号：WO2014058701A1
公开(公告)日：2014-04-17
申请号：PCT/US2013/063206
申请日：2013-10-03
申请人： CORNING INCORPORATED , BISWAS, Samir , BLANDING, Douglass Lane , COOK, Glen Bennett , MAZUMDER, Prantik , SONI, Kamal Kishore , SUMAN, Balram
发明人： BISWAS, Samir , BLANDING, Douglass Lane , COOK, Glen Bennett , MAZUMDER, Prantik , SONI, Kamal Kishore , SUMAN, Balram
IPC分类号： C30B11/00 , C30B15/06 , C30B29/06
CPC分类号： H01L21/02422 , H01L31/02363 , H01L31/03921 , H01L31/0682 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Methods of forming a laminate comprising a sheet of semiconductor material utilize a system. The system comprises a fibrous sheet, a guide member for guiding the fibrous sheet, and a melt of a semiconductor material. The sheet of semiconductor material and a laminate comprising the fibrous sheet and the sheet of semiconductor material are also included.
摘要翻译：形成包含半导体材料片的层压体的方法利用系统。该系统包括纤维片，用于引导纤维片的引导部件和半导体材料的熔体。还包括半导体材料片和包含纤维片和半导体材料片的层压体。

7. 发明申请

WO2013028494A1 MOLD THERMOPHYSICAL PROPERTIES FOR THICKNESS UNIFORMITY OPTIMIZATION OF EXOCAST SHEET 审中-公开
标题翻译：模具厚度均匀性优化的热塑性物理特性
公开(公告)号：WO2013028494A1
公开(公告)日：2013-02-28
申请号：PCT/US2012/051295
申请日：2012-08-17
申请人： CORNING INCORPORATED , COOK, Glen Bennett , MAZUMDER, Prantik , SUMAN, Balram
发明人： COOK, Glen Bennett , MAZUMDER, Prantik , SUMAN, Balram
IPC分类号： C30B11/00 , C30B15/00 , C30B19/12 , C30B29/06
CPC分类号： C30B29/06 , C30B11/002 , C30B15/007 , C30B19/12
摘要： The disclosure relates to substrate molds with variable thermal mass. The disclosure relates to substrate molds comprising refractory materials having a leading edge and a trailing edge, wherein the substrate mold has a graded thermal mass comprising a leading edge thermal mass (M t(lead) ) and a trailing edge thermal mass (M t(trail) ), wherein M t(lead) is less than M t(trail) . The disclosure also relates to methods of making articles of semiconducting material and methods of minimizing total thickness variation in articles of semiconducting material, said methods comprising using the molds disclosed.
摘要翻译：本公开涉及具有可变热质量的基底模具。本公开涉及包括具有前缘和后缘的耐火材料的基底模具，其中所述基底模具具有包括前缘热质（Mt（铅））和后缘热质（Mt（线））的分级热质，），其中Mt（铅）小于Mt（trail）。本公开还涉及制造半导体材料的方法和使半导体材料制品中的总厚度变化最小化的方法，所述方法包括使用所公开的模具。

8. 发明申请

WO2014058698A1 SHEET OF SEMICONDUCTING MATERIAL, SYSTEM FOR FORMING SAME, AND METHOD OF FORMING SAME 审中-公开
标题翻译：半导体材料，其形成系统及其形成方法
公开(公告)号：WO2014058698A1
公开(公告)日：2014-04-17
申请号：PCT/US2013/063201
申请日：2013-10-03
申请人： CORNING INCORPORATED , BISWAS, Samir , BLANDING, Douglass Lane , COOK, Glen Bennett , MAZUMDER, Prantik , SONI, Kamal Kishore , SUMAN, Balram
发明人： BISWAS, Samir , BLANDING, Douglass Lane , COOK, Glen Bennett , MAZUMDER, Prantik , SONI, Kamal Kishore , SUMAN, Balram
IPC分类号： C30B29/64 , C30B29/42 , C30B29/08 , C30B29/06 , C30B15/08
CPC分类号： H01L33/02 , C30B15/08 , C30B29/06 , C30B29/08 , C30B29/42 , C30B29/64 , H01L21/02
摘要： A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.
摘要翻译：形成半导体材料片的方法利用了一种系统。该系统包括沿着第一轴线延伸并且能够围绕第一轴线旋转的第一凸起构件和与第一凸起构件间隔开并且沿着第二轴线延伸并能够围绕第二轴线旋转的第二凸起构件。第一和第二凸起构件在它们之间限定了夹持间隙。所述方法包括将所述半导体材料的熔体施加在所述第一和第二凸起构件中的至少一个的外表面上，以在所述第一和第二凸起构件中的至少一个的外部表面上形成沉积物。该方法还包括使第一和第二凸出部件沿彼此相反的方向旋转，以允许沉积物通过夹持间隙，由此形成半导体材料片。

9. 发明申请

WO2011069027A1 METHOD OF EXOCASTING AN ARTICLE OF SEMICONDUCTING MATERIAL 审中-公开
标题翻译：出售半导体材料的方法
公开(公告)号：WO2011069027A1
公开(公告)日：2011-06-09
申请号：PCT/US2010/058818
申请日：2010-12-03
申请人： CORNING INCORPORATED , MAZUMDER, Prantik , SUMAN, Balram
发明人： MAZUMDER, Prantik , SUMAN, Balram
IPC分类号： C30B15/00 , C30B19/06 , C30B29/06 , C30B11/00
CPC分类号： C30B15/007 , C30B11/00 , C30B19/062 , C30B29/06
摘要： A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.
摘要翻译：制造半导体材料制品的方法包括选择制品的目标厚度，然后将模具浸没在熔融半导体材料中以浸没时间有效地在模具的外表面上形成半导体材料的固体层，其中固体层的厚度基本上等于目标厚度。浸入时间被选择为基本上等于转变时间，其由具有特定属性的模具的实心层厚度与浸没时间的图确定，包括模具成分，模具厚度和初始模具温度。过渡时间，从而浸入时间对应于固体层厚度对于特定模具的浸入时间曲线的固体层厚度的最大值。

10. 发明申请

WO2012166445A1 COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL 审中-公开
标题翻译：复合材料的主要成分及制备方法
公开(公告)号：WO2012166445A1
公开(公告)日：2012-12-06
申请号：PCT/US2012/039019
申请日：2012-05-23
申请人： CORNING INCORPORATED , COOK, Glen Bennett , MAZUMDER, Prantik , SUMAN, Balram , VENKATARAMAN, Natesan
发明人： COOK, Glen Bennett , MAZUMDER, Prantik , SUMAN, Balram , VENKATARAMAN, Natesan
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06
CPC分类号： C30B15/007 , C30B15/36 , C30B29/06
摘要： The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.
摘要翻译：本公开涉及一种基材模具，其包括壳体材料，该外壳材料具有被配置为与熔融半导体材料接合的外表面，以及被配置为热转印表面以传递热量的内表面，以及限定在外壳材料内的构造物，外壳材料通过外壳材料的热传递表面的热量。衬底模具被配置为浸入熔融半导体材料中，并且外壳材料的外表面被配置为具有在其上形成的凝固的熔融半导体材料。

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