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1. 发明申请

WO2014001886A1 FILM OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL, METHOD OF MAKING SAME AND ORIENTING/UNDERCOOLING MOLDS THEREFOR, AND ELECTRONIC DEVICE 审中-公开
标题翻译：多晶半导体材料的薄膜，其制备方法及其制备方法和电子设备
公开(公告)号：WO2014001886A1
公开(公告)日：2014-01-03
申请号：PCT/IB2013/001370
申请日：2013-06-27
申请人： RGS DEVELOPMENT B.V.
发明人： LEEMPOEL, Patrick , PICHON, Pierre-Yves , SCHÖNECKER, Axel
IPC分类号： C30B15/00 , C30B28/10 , H01L31/18
CPC分类号： C30B15/007 , C30B28/10 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A film of polycrystalline semiconductor material, a method of making the film and orienting/undercooling molds that are useful in the method, and an electronic device comprising or prepared from the film. An orienting/undercooling mold that is impermeable to gas flow, the orienting/undercooling mold comprising a first orienting/undercooling surface configured with a basal surface consisting essentially of a low nucleation-potency material and with a plurality of contact points, at least some of the plurality of contact points consisting essentially of a monocrystalline semiconductor material for orienting crystal growth and controlling positions of nucleation sites on the orienting/undercooling surface, and any remainder of the plurality of contact points consisting essentially of a low nucleation-potency material for controlling heat transfer without functioning as nucleation sites; and wherein crystal lattices of at least 80 percent of the total number of the contact points consisting essentially of a monocrystalline semiconductor material are oriented parallel to each other.
摘要翻译：多晶半导体材料薄膜，制造该方法中有用的薄膜和定向/过冷模具的方法，以及包括该薄膜或由薄膜制备的电子装置。取向/过冷模具包括第一取向/过冷表面，该第一取向/过冷模具配置有基本表面，该基础表面基本上由低成核效力材料组成，并具有多个接触点，至少一些多个接触点基本上由用于取向晶体生长和控制取向/过冷表面上的成核位置的位置的单晶半导体材料组成，并且多个接触点的任何其余部分基本上由用于控制热的低成核效应材料组成转移而不起核化作用; 并且其中基本上由单晶半导体材料组成的接触点总数的至少80％的晶格彼此平行取向。

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