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1. 发明申请

WO2012121972A3 SHEET WAFER GROWTH STABILIZATION 审中-公开
标题翻译：薄片生长稳定
公开(公告)号：WO2012121972A3
公开(公告)日：2015-06-11
申请号：PCT/US2012027280
申请日：2012-03-01
申请人： EVERGREEN SOLAR INC , KERNAN BRIAN D , HUANG WEIDONG
发明人： KERNAN BRIAN D , HUANG WEIDONG
IPC分类号： C30B15/00
CPC分类号： C30B15/007 , C30B15/34 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： An apparatus for forming a sheet wafer has an enclosure forming an interior chamber, and a crucible within the interior chamber and having a top surface. The crucible is configured to contain a volume of molten material. The apparatus also has a wafer guide spaced from the top surface of the crucible and within the interior chamber. The wafer guide forms a channel for passing a growing sheet wafer.
摘要翻译：用于形成片状晶片的装置具有形成内部腔室的外壳和位于内部腔室内并具有顶部表面的坩埚。坩埚被配置成容纳一定体积的熔融材料。该设备还具有与坩埚的顶表面间隔开并在内室内的晶片引导件。晶片引导件形成用于通过生长片材晶片的通道。

2. 发明申请

WO2012071341A2 METHOD FOR REDUCING THE RANGE IN RESISTIVITIES OF SEMICONDUCTOR CRYSTALLINE SHEETS GROWN IN A MULTI-LANE FURNACE 审中-公开
标题翻译：减少多层玻璃中生成的半导体晶体结构的电阻范围的方法
公开(公告)号：WO2012071341A2
公开(公告)日：2012-05-31
申请号：PCT/US2011/061694
申请日：2011-11-21
申请人： EVERGREEN SOLAR, INC. , KERNAN, Brian, D. , TARNOWSKI, Gary, J. , HUANG, Weidong , REITSMA, Scott , RICHARDSON, Christine
发明人： KERNAN, Brian, D. , TARNOWSKI, Gary, J. , HUANG, Weidong , REITSMA, Scott , RICHARDSON, Christine
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： C30B29/06 , C30B15/007
摘要： A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.
摘要翻译：一种减少在多通道生长炉中生产的半导体晶体片的电阻率范围的方法。提供一种用于生长结晶片的炉子，其包括具有材料导入区域的坩埚和包括多个晶片生长通道的晶体生长区域。该坩埚被构造成从材料导入区域向距离材料导入区域最远的晶片生长通道产生大致一个方向的材料流。掺杂有大量微量的p型掺杂剂和n型掺杂剂的硅被引入到材料引入区域中。掺杂的硅在坩埚中形成熔融物质，称为熔体。在晶体生长区域中的每个生长通道处的熔体形成结晶片。共掺杂硅原料可以减少在每个通道中形成的结晶片之间的电阻率的变化。

3. 发明申请

WO2005053883A3 INFILTRATING A POWDER METAL SKELETON BY A SIMILAR ALLOY WITH DEPRESSED MELTING POINT EXPLOITING A PERSISTENT LIQUID PHASE AT EQUILIBRIUM, SUITABLE FOR FABRICATING STEEL PARTS 审中-公开
标题翻译：通过类似合金渗透粉末冶金点渗透粉末金属表面，在均衡器上开发适用于制造钢件的均匀液相
公开(公告)号：WO2005053883A3
公开(公告)日：2005-08-04
申请号：PCT/US2004039133
申请日：2004-11-22
申请人： MASSACHUSETTS INST TECHNOLOGY , KERNAN BRIAN D , SACHS EMANUEL M , ALLEN SAMUEL M , LORENZ ADAM M
发明人： KERNAN BRIAN D , SACHS EMANUEL M , ALLEN SAMUEL M , LORENZ ADAM M
IPC分类号： C22C33/02 , B22F3/26
CPC分类号： C22C38/18 , B33Y80/00 , C22C33/0242
摘要： A fully densified substantially homogeneous steel part is made by infiltrating a skeleton made form steel powder with an infiltrant of a similar composition. The composition of the powder and the infiltrant differ primarily only in that the infiltrant has a higher concentration of a melting point depressant agent than does the skeleton, and this higher concentration results in the infiltrant having a melting point that is significantly lower than that of the skeleton composition.
摘要翻译：完全致密化的基本均匀的钢部件是通过浸入由具有相似成分的渗透剂的钢粉制成的骨架制成的。粉末和渗透剂的组成主要仅在于浸渗剂具有比骨架更高的熔点降低剂的浓度，并且这种较高的浓度导致浸渍剂的熔点明显低于骨骼组成。

4. 发明申请

WO2021097267A1 THERMAL DEBINDING TECHNIQUES FOR ADDITIVE MANUFACTURING AND RELATED SYSTEMS AND METHODS 审中-公开
公开(公告)号：WO2021097267A1
公开(公告)日：2021-05-20
申请号：PCT/US2020/060489
申请日：2020-11-13
申请人： DESKTOP METAL, INC. , KERNAN, Brian, D. , SCHOFALVI, Karl-Heinz
发明人： REIDY, John , CRAVEN, Christopher , TUNCER, Nihan , BOSE, Animesh , BARBATI, Alexander, C. , FULOP, Ricardo
IPC分类号： B33Y70/00 , B33Y10/00 , B29C64/10
摘要： Techniques for debinding additively fabricated parts are described that do not require solvent debinding or catalytic debinding, and that may be performed using only thermal debinding in a furnace. As a result, in at least some cases debinding and sintering may take place sequentially within a single furnace. In some embodiments, the techniques may utilize particular materials as binders that allow for a thermal debinding process that does not negatively affect the parts.

5. 发明申请

WO2005053883A2 INFILTRATING A POWDER METAL SKELETON BY A SIMILAR ALLOY WITH DEPRESSED MELTING POINT EXPLOITING A PERSISTENT LIQUID PHASE AT EQUILIBRIUM, SUITABLE FOR FABRICATING STEEL PARTS 审中-公开
标题翻译：通过类似合金渗透粉末冶金点渗透粉末金属表面，在均衡器上开发适用于制造钢件的均匀液相
公开(公告)号：WO2005053883A2
公开(公告)日：2005-06-16
申请号：PCT/US2004/039133
申请日：2004-11-22
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , KERNAN, Brian, D. , SACHS, Emanuel, M. , ALLEN, Samuel, M. , LORENZ, Adam, M.
发明人： KERNAN, Brian, D. , SACHS, Emanuel, M. , ALLEN, Samuel, M. , LORENZ, Adam, M.
IPC分类号： B22F3/26
CPC分类号： C22C38/18 , B33Y80/00 , C22C33/0242
摘要： A steel powder metal skeleton is infiltrated with an infiltrant composition similar to the skeleton, with an additional agent that depresses the melting point of the infiltrant relative to the skeleton. Infiltration is driven primarily by capillary pressure. The powder and infiltrant compositions differ primarily only in a higher concentration of a melting point depressant agent "MPD" in the infiltrant. Carbon (C) and silicon (Si) and several other elements can be elements in an MPD, either alone or in combination. Certain steel target compositions are such that a complementary infiltrant, and skeleton can be chosen such that a skeleton will remain solid at an infiltration temperature at which the infiltrant can be melted and fully infiltrated, and further where there is a persistent two phase field, with a liquid phase that is large enough (greater than 7% vol, and typically between 20 and 40 volt) so that flow can be maintained without choke off from diffusional solidification. The solid and the liquid phases remaining after any diffusional solidification have different compositions, with a bulk composition of the target. Typically the difference is slight, and the full part is substantially homogeneous. Heat treating, such as austenitizing, quenching, or slow cooling and tempering, can improve homogeneity and mechanical properties. The MPD can have a relatively high diffusivity and solubility in the skeleton. Methods of designing systems of target, skeleton and infiltrant compositions and infiltration temperature are disclosed.
摘要翻译：钢粉末金属骨架用类似于骨架的渗透剂组合物渗透，另外一种可以降低渗透剂相对于骨架的熔点的试剂。渗透主要由毛细管压力驱动。粉末和渗透剂组合物主要仅在浸润剂中较高浓度的熔点降低剂“MPD”。碳（C）和硅（Si）等几种元素可以单独或组合使用在MPD中的元素。某些钢靶组合物使得可以选择互补的浸润剂和骨架，使得骨架将在浸润剂可以熔化和完全渗透的浸润温度下保持固体，并且进一步在存在持续的两相场的情况下，足够大的液相（大于7％体积，通常在20和40伏特之间），从而可以保持流动而不会阻碍扩散凝固。在任何扩散固化后残留的固体和液相具有不同的组成，具有靶的体积组成。通常，差异很小，整个部分基本上是均匀的。诸如奥氏体化，淬火或缓慢冷却和回火的热处理可以改善均匀性和机械性能。 MPD可以在骨架中具有相对较高的扩散性和溶解性。公开了设计目标，骨架和浸润剂组合物系统的方法和浸润温度。

6. 发明申请

WO2012121972A2 SHEET WAFER GROWTH STABILIZATION 审中-公开
标题翻译：薄片生长稳定
公开(公告)号：WO2012121972A2
公开(公告)日：2012-09-13
申请号：PCT/US2012/027280
申请日：2012-03-01
申请人： EVERGREEN SOLAR, INC. , KERNAN, Brian D. , HUANG, Weidong
发明人： KERNAN, Brian D. , HUANG, Weidong
IPC分类号： B22D7/06
CPC分类号： C30B15/007 , C30B15/34 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： An apparatus for forming a sheet wafer has an enclosure forming an interior chamber, and a crucible within the interior chamber and having a top surface. The crucible is configured to contain a volume of molten material. The apparatus also has a wafer guide spaced from the top surface of the crucible and within the interior chamber. The wafer guide forms a channel for passing a growing sheet wafer.
摘要翻译：用于形成片状晶片的装置具有形成内部腔室的外壳和在内部腔室内的具有顶部表面的坩埚。坩埚被配置成容纳一定体积的熔融材料。该装置还具有与坩埚的顶表面间隔开并在内室内的晶片引导件。晶片引导件形成用于通过生长片材晶片的通道。

7. 发明申请

WO2012071341A3 METHOD FOR REDUCING THE RANGE IN RESISTIVITIES OF SEMICONDUCTOR CRYSTALLINE SHEETS GROWN IN A MULTI-LANE FURNACE 审中-公开
标题翻译：减少在多线炉中生长的半导体晶体片材的溶解范围的方法
公开(公告)号：WO2012071341A3
公开(公告)日：2012-10-04
申请号：PCT/US2011061694
申请日：2011-11-21
申请人： EVERGREEN SOLAR INC , KERNAN BRIAN D , TARNOWSKI GARY J , HUANG WEIDONG , REITSMA SCOTT , RICHARDSON CHRISTINE
发明人： KERNAN BRIAN D , TARNOWSKI GARY J , HUANG WEIDONG , REITSMA SCOTT , RICHARDSON CHRISTINE
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： C30B29/06 , C30B15/007
摘要： A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.
摘要翻译：一种用于降低多道生长炉中产生的半导体晶体片的电阻率范围的方法。提供了一种用于生长晶体片的炉，其包括具有材料引入区和包括多个晶体片生长道的晶体生长区的坩埚。坩埚被配置为从材料引入区朝向离材料引入区最远的晶体片生长道产生大体上一个方向的材料流。将掺杂有大于痕量的p型掺杂剂和n型掺杂剂的硅引入到材料引入区域中。掺杂的硅在称为熔体的坩埚中形成熔融物质。晶体片在晶体生长区的每个生长线由熔体形成。共掺杂硅原料可以减少每条通道中形成的结晶片之间电阻率的变化。

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