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1. 发明申请

WO2011006018A3 APPARATUS AND METHOD FOR PLASMA PROCESSING 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：WO2011006018A3
公开(公告)日：2014-03-20
申请号：PCT/US2010041440
申请日：2010-07-08
申请人： PLASMASI INC , SAVAS STEPHEN EDWARD , GALEWSKI CARL , WIESNOSKI ALLAN B , MANTRIPRAGADA SAI , JOH SOOYUN
发明人： SAVAS STEPHEN EDWARD , GALEWSKI CARL , WIESNOSKI ALLAN B , MANTRIPRAGADA SAI , JOH SOOYUN
IPC分类号： H01L21/306
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

2. 发明申请

WO2002070778A1 APPARATUS AND METHOD FOR WEB COOLING IN A VACUUM COATING CHAMBER 审中-公开
标题翻译：用于在真空涂料室中进行网状冷却的装置和方法
公开(公告)号：WO2002070778A1
公开(公告)日：2002-09-12
申请号：PCT/US2002/005679
申请日：2002-02-27
申请人： APPLIED PROCESS TECHNOLOGIES , MADOCKS, John, E. , LEMME, Charles, D.
发明人： MADOCKS, John, E. , LEMME, Charles, D.
IPC分类号： C23C16/00
CPC分类号： C23C16/466 , C23C14/562
摘要： A chill drum (14) is modified to improve heat transfert between the drum and a flexible web substrate (20) disposed around the drum. The drum surface (22) contains a series of passages (44) and distribution holes (46). A working gas is injected into these passages and flows out of the distribution holes into the space between the web and drum. A cover (32) prevents working gas from escaping from frum passages in the area not covered by the web, and supplies the working gas to the passages at the drum cover. Once gas is in the passages, leakage only occurs from the edges of the web. The pressure in the passages remains essentially constant around the drum, producing uniform elevated pressures under the entire web. Elevated pressure behind the web significantly improves overall heat transfert, thereby allowing higher deposition rates and other process advantages.
摘要翻译：改变冷却鼓（14）以改善滚筒与布置在滚筒周围的柔性幅材基片（20）之间的热传递。鼓表面（22）包含一系列通道（44）和分配孔（46）。工作气体注入这些通道并从分配孔流出到卷筒和滚筒之间的空间中。盖（32）防止工作气体从未被卷筒纸覆盖的区域中的通道中逸出，并将工作气体供应到鼓罩上的通道。一旦气体在通道中，泄漏只从网的边缘发生。通道中的压力在鼓周围保持基本恒定，在整个幅材下产生均匀的升高的压力。幅材后面的高压显着地改善了总体传热，从而允许更高的沉积速率和其它工艺优点。

3. 发明申请

WO02046489A1 METHOD FOR INTEGRATED IN-SITU CLEANING AND SUBSEQUENT ATOMIC LAYER DEPOSITION WITHIN A SINGLE PROCESSING CHAMBER 审中-公开
标题翻译：一体化处理室内集成式现场清洗和后续原子层沉积的方法
公开(公告)号：WO02046489A1
公开(公告)日：2002-06-13
申请号：PCT/US2001/044300
申请日：2001-11-26
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/511 , H01J37/32 , H01L21/285 , H01L21/768 , C23C14/02 , C08J7/18 , C23C16/00 , C23C16/06 , C30B25/00 , C30B25/08 , C30B25/14
CPC分类号： C23C16/45525 , C23C16/0227 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/46 , C23C16/466 , C23C16/481 , C23C16/511 , H01J37/3244 , H01J37/32449 , H01J37/32862 , H01L21/28562 , H01L21/76814 , H01L21/76838
摘要： A system and sequential method for integrated, in-situ modification of a substrate (181) in and subsequent atomic layer deposition of a thin film onto the substrate (181) in an evacutated chamber comprising introducing at least one feed gas (130) into the chamber; generating a plasma (172) from the feed gas; exposing the substrate to ions (177) and/or radicals (176) formed by the plasma; modulating any ions; reacting the substrate with the modulated ions and/or radicals to remove any contaminants for the substate and producing a modified substrate. These steps are followed, in-situ, by performing an atomic layer deposition of a thin film onto the modified substrate in the chamber.
摘要翻译：一种系统和顺序方法，用于在真空室中将薄膜原位层沉积到衬底（181）上和之后的衬底（181）的原位修改，包括将至少一个进料气体（130）引入到室; 从所述进料气体产生等离子体（172）; 将衬底暴露于由等离子体形成的离子（177）和/或自由基（176）; 调节任何离子; 使基底与调制的离子和/或自由基反应以除去子状态的任何污染物并产生改性的底物。通过在腔室中将薄膜原子层沉积到改性基底上，就可以实现这些步骤。

4. 发明申请

WO00042235A1 FILM FORMING DEVICE 审中-公开
标题翻译：电影制作装置
公开(公告)号：WO00042235A1
公开(公告)日：2000-07-20
申请号：PCT/JP2000/000173
申请日：2000-01-17
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , H01L21/28 , H01L21/285 , H01L21/687
CPC分类号： C23C16/45521 , C23C16/04 , C23C16/4585 , C23C16/4586 , C23C16/466 , H01L21/28556 , H01L21/67109 , H01L21/68721 , H01L21/68735
摘要： A film forming device, characterized by comprising a container forming a processing chamber in which an object is processed, a loading table which is provided in the processing chamber and on which the object is loaded, a first heating device which is provided on the loading table and heats the object loaded on the loading table, a first gas feeding part which is provided in the container and feeds into the processing chamber a processing gas for forming a metallic film layer with high melting point on the object loaded on the loading table, a movable clamp holding the object on the loading table by pressing the peripheral part of the object, a second heating device which is formed separately from the clamp and indirectly heats the clamp, a gas flow path formed at least between the clamp and the second heating device when the clamp is moved to a position where it presses the object, and a second gas feed part feeding a back side gas to the gas flow path.
摘要翻译：一种成膜装置，其特征在于包括形成处理室的容器，其中处理物体，设置在处理室中并在其上装载物体的装载台，设置在装载台上的第一加热装置加热装载台上装载的物体，设置在容器内的第一供气部，将装载台上的物体上形成熔点高的金属膜层的处理气体送入处理室; 通过按压物体的周边部分将物体保持在装载台上的可动夹具，与夹具分开形成并间接加热夹具的第二加热装置，至少形成在夹具和第二加热装置之间的气体流路当夹具移动到其按压物体的位置时，以及将后侧气体供给到气体流路的第二供气部。

5. 发明申请

WO1996015287A2 METHOD AND APPARATUS FOR ISOLATING A SUSCEPTOR HEATING ELEMENT FROM A CHEMICAL VAPOR DEPOSITION ENVIRONMENT 审中-公开
标题翻译：用于从化学气相沉积环境中分离出一种不连续加热元素的方法和装置
公开(公告)号：WO1996015287A2
公开(公告)日：1996-05-23
申请号：PCT/US1995014231
申请日：1995-10-31
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , WHITE, Carl , MACERNIE, Jon, R. , HILLMAN, Joseph, T.
IPC分类号： C23C16/44
CPC分类号： C23C16/466 , C23C16/4586 , C23C16/46
摘要： A CVD apparatus (10) for heating a wafer (106) isolates the heating element (120) from the CVD environment and includes a susceptor body (100) defining a sealed space (140) to contain the heating element (120) and a backplane (102) for supporting and heating the wafer (106). The susceptor space (140) is sealed from the CVD environment and is vacuumed to a first pressure. Heating gas is delivered through a space (190) extending through the susceptor body (100) which is sealed from the susceptor space (140) containing the heating element and is vacuumed to a second pressure preferably less than the CVD reaction pressure to clamp the wafer (106). The heating gas delivery space is formed by an elongated sheath (186) surrounding a hollow wafer lift tube (62). The sheath (186) is sealed at one end to the backplane (102) and at the other end to the tube (62), which moves up and down within the sheath (186). Various seals provide isolation of the heating element space and gas delivery space from each other and from the CVD reaction environment to protect the heating elements from the corrosive effects of CVD vapors.
摘要翻译：用于加热晶片（106）的CVD设备（10）将加热元件（120）与CVD环境隔离，并且包括限定用于容纳加热元件（120）的密封空间（140）的基座体（100）和背板（102），用于支撑和加热晶片（106）。基座空间（140）与CVD环境密封并被抽真空至第一压力。加热气体通过延伸穿过基座主体（100）的空间（190）传送，该基座体从包含加热元件的基座空间（140）密封，并被抽真空至优选小于CVD反应压力的第二压力以夹紧晶片（106）。加热气体输送空间由围绕中空晶片提升管（62）的细长护套（186）形成。鞘（186）在一端被密封到背板（102），另一端被密封在管（62）上，管（62）在护套（186）内上下移动。各种密封件将加热元件空间和气体输送空间与CVD反应环境隔离，以保护加热元件免受CVD蒸汽的腐蚀作用。

6. 发明申请

WO1993026038A1 SEMICONDUCTOR WAFER PROCESSING METHOD AND APPARATUS WITH HEAT AND GAS FLOW CONTROL 审中-公开
标题翻译：半导体波浪加工方法与装置与气体流量控制
公开(公告)号：WO1993026038A1
公开(公告)日：1993-12-23
申请号：PCT/US1993005656
申请日：1993-06-11
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , FOSTER, Robert, F. , REBENNE, Helen, E. , LEBLANC, Rene, E. , WHITE, Carl, L. , ARORA, Rikhit
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/14 , C23C16/34 , C23C16/4401 , C23C16/4405 , C23C16/455 , C23C16/45502 , C23C16/45512 , C23C16/45521 , C23C16/45591 , C23C16/4584 , C23C16/46 , C23C16/466 , C23C16/54 , H01L21/67109
摘要： A semiconductor wafer processing apparatus (10) is provided with a susceptor (40) for supporting a wafer (44) for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead (35) directs a gas mixture from a cooled mixing chamber (30) onto an upwardly facing wafer (44) on the susceptor (40). Smooth interior reactor surfaces include baffles (90, 101, 102) and a susceptor lip (162) and wall (130) shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip (162) surrounds the wafer (44) and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip (162) smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.
摘要翻译：半导体晶片处理装置（10）设置有用于支撑用于诸如覆盖或选择性沉积钨或氮化钛的膜的CVD的晶片（44）的基座（40），以及脱气和退火工艺。优选地，面向下的喷头（35）将气体混合物从冷却的混合室（30）引导到基座（40）上面向上的晶片（44）上。平滑的内部反应器表面包括挡板（90,101,102）和形成为使湍流最小化的基座唇缘（162）和壁（130）。惰性气体通过填充基座结构中的间隙来减少湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。感受器唇缘（162）围绕晶片（44）并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许改变用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料或可清除的毯子CVD中的未用气体。唇缘（162）平滑气流，降低晶片边缘的热梯度。基座设计通过传导或辐射减少从基座到其他反应器部件的热流。

7. 发明申请

WO2013102577A1 HEAT TRANSFER CONTROL IN PECVD SYSTEMS 审中-公开
标题翻译： PECVD系统中的传热控制
公开(公告)号：WO2013102577A1
公开(公告)日：2013-07-11
申请号：PCT/EP2012/076434
申请日：2012-12-20
申请人： TEL SOLAR AG
发明人： JOST, Stephan , CHAUDHARY, Devendra , KLINDWORTH, Markus
IPC分类号： C23C16/44 , C23C16/455 , C23C16/46
CPC分类号： C23C16/4411 , C23C16/44 , C23C16/4401 , C23C16/45557 , C23C16/463 , C23C16/466 , C23C16/513
摘要： The invention relates to a method for manufacturing thin films on substrates, the method comprising providing a deposition system, having an inner non-airtight enclosure for containing substrates and an outer airtight chamber completely surrounding this enclosure. The inner non-airtight enclosure is maintained at a pressure lower than the pressure within said outer airtight chamber, and a backfilling gas comprising at least hydrogen or helium is introduced into the outer airtight chamber volume. Backfilling with hydrogen or helium in this manner prevents contamination of the interior of the inner non-airtight enclosure with substances such as nitrogen which may adversely affect the process taking place there within. Furthermore, hydrogen exhibits better heat conduction than e.g. nitrogen, improving cooling of the inner non-airtight enclosure.
摘要翻译：本发明涉及一种用于在基底上制造薄膜的方法，该方法包括提供一种沉积系统，其具有用于容纳基底的内部非气密外壳和完全围绕该外壳的外部气密室。内部非气密外壳保持在低于所述外部气密室内的压力的压力下，并且至少包含氢气或氦气的回填气体被引入外部气密室容积。以这种方式回填氢气或氦气可防止内部非气密性外壳的内部被诸如氮气的物质污染，这可能会对内部发生的过程产生不利影响。此外，氢显示比例如更好的热传导。氮气，改善内部非气密外壳的冷却。

8. 发明申请

WO2011090717A1 COATING METHODS, SYSTEMS, AND RELATED ARTICLES 审中-公开
标题翻译：涂料方法，系统和相关文章
公开(公告)号：WO2011090717A1
公开(公告)日：2011-07-28
申请号：PCT/US2010/062242
申请日：2010-12-28
申请人： GVD CORPORATION , HANDY, Erik, S. , WHITE, Aleksander, J. , O'SHAUGHNESSY, W., Shannan , LEWIS, Hilton G., Pryce , BANSAL, Neeta, P. , GLEASON, Karen, K.
发明人： HANDY, Erik, S. , WHITE, Aleksander, J. , O'SHAUGHNESSY, W., Shannan , LEWIS, Hilton G., Pryce , BANSAL, Neeta, P. , GLEASON, Karen, K.
IPC分类号： B05D7/24 , C23C14/50 , C23C14/54 , C23C16/458 , C23C16/46 , C23C16/455 , B05D5/08
CPC分类号： B05D7/24 , B05B7/20 , B05D1/34 , B05D1/60 , B05D3/0473 , B05D5/083 , B05D2201/02 , B05D2202/00 , C23C16/44 , C23C16/45519 , C23C16/45557 , C23C16/46 , C23C16/463 , C23C16/466 , C23C16/48 , C23C16/50 , C23C16/52 , G01B7/16 , G01B11/16 , Y10T428/12493 , Y10T428/31649 , Y10T428/31663 , Y10T428/31678
摘要： Coated articles and methods and systems for coating the articles are described herein. The methods and systems described herein include, but are not limited to, steps for actively or passively controlling the temperature during the coating process, steps for providing intimate contact between the substrate and the support holding the substrate in order to maximize energy transfer, and/or steps for preparing gradient coatings. Methods for depositing high molecular weight polymeric coatings, end-capped polymer coatings, coatings covalently bonded to the substrate or one another, metallic coatings, and/or multilayer coatings are also disclosed. Deposition of coatings can be accelerated and/or improved by applying an electrical potential and/or through the use of inert gases.
摘要翻译：本文描述了用于涂覆制品的涂布制品和方法和系统。本文描述的方法和系统包括但不限于用于在涂覆过程期间主动或被动地控制温度的步骤，用于在基底和保持基底的支撑体之间提供紧密接触的步骤，以便最大限度地传递能量，和/ 或制备梯度涂层的步骤。还公开了用于沉积高分子量聚合物涂层，封端聚合物涂层，共价键合到基底或彼此的涂层，金属涂层和/或多层涂层的方法。可以通过施加电势和/或通过使用惰性气体来加速和/或改善涂层的沉积。

9. 发明申请

WO2005074450A3 SUBSTRATE HOLDER HAVING A FLUID GAP AND METHOD OF FABRICATING THE SUBSTRATE HOLDER 审中-公开
标题翻译：具有流体隙的基板支架和用于制造基板支架的方法
公开(公告)号：WO2005074450A3
公开(公告)日：2006-02-16
申请号：PCT/US2004039780
申请日：2004-12-23
申请人： TOKYO ELECTRON LTD , HAMELIN THOMAS
发明人： HAMELIN THOMAS
IPC分类号： C23C16/458 , C23C16/46 , H01L21/00 , H01L21/302 , H01L21/461 , H05B3/68 , H05K7/20
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , C23C16/466
摘要： A substrate holder (20) for supporting a substrate (30). A heating component (50) is positioned adjacent to a supporting surface and between the supporting surface and a cooling component (60). A fluid gap is positioned between the cooling component and the heating component, the fluid gap configured to receive a fluid to increase thermal conduction between the cooling component and the heating component. A brazing material is disposed between the cooling component and the heating component, the brazing material disposed adjacent to the fluid gap.
摘要翻译：一种用于支撑衬底（30）的衬底保持器（20）。加热部件（50）定位成与支撑表面相邻并且在支撑表面和冷却部件（60）之间。流体间隙位于冷却部件和加热部件之间，流体间隙配置成接收流体以增加冷却部件和加热部件之间的热传导。钎焊材料设置在冷却部件和加热部件之间，钎焊材料邻近流体间隙设置。

10. 发明申请

WO2005074450A2 SUBSTRATE HOLDER HAVING A FLUID GAP AND METHOD OF FABRICATING THE SUBSTRATE HOLDER 审中-公开
标题翻译：具有流体隙的基板支架和用于制造基板支架的方法
公开(公告)号：WO2005074450A2
公开(公告)日：2005-08-18
申请号：PCT/US2004/039780
申请日：2004-12-23
申请人： TOKYO ELECTRON LIMITED , HAMELIN, Thomas
发明人： HAMELIN, Thomas
IPC分类号： C23C16/458 , C23C16/46 , H01L21/00
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , C23C16/466
摘要： A substrate holder for supporting a substrate. A heating component is positioned adjacent to a supporting surface and between the supporting surface and a cooling component. A fluid gap is positioned between the cooling component and the heating component, the fluid gap configured to receive a fluid to increase thermal conduction between the cooling component and the heating component. A brazing material is disposed between the cooling component and the heating component, the brazing material disposed adjacent to the fluid gap.
摘要翻译：一种用于支撑衬底的衬底保持器。加热部件邻近支撑表面并位于支撑表面和冷却部件之间。流体间隙位于冷却部件和加热部件之间，流体间隙配置成接收流体以增加冷却部件和加热部件之间的热传导。钎焊材料设置在冷却部件和加热部件之间，钎焊材料邻近流体间隙设置。

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