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1. 发明申请

WO2002070778A1 APPARATUS AND METHOD FOR WEB COOLING IN A VACUUM COATING CHAMBER 审中-公开
标题翻译：用于在真空涂料室中进行网状冷却的装置和方法
公开(公告)号：WO2002070778A1
公开(公告)日：2002-09-12
申请号：PCT/US2002/005679
申请日：2002-02-27
申请人： APPLIED PROCESS TECHNOLOGIES , MADOCKS, John, E. , LEMME, Charles, D.
发明人： MADOCKS, John, E. , LEMME, Charles, D.
IPC分类号： C23C16/00
CPC分类号： C23C16/466 , C23C14/562
摘要： A chill drum (14) is modified to improve heat transfert between the drum and a flexible web substrate (20) disposed around the drum. The drum surface (22) contains a series of passages (44) and distribution holes (46). A working gas is injected into these passages and flows out of the distribution holes into the space between the web and drum. A cover (32) prevents working gas from escaping from frum passages in the area not covered by the web, and supplies the working gas to the passages at the drum cover. Once gas is in the passages, leakage only occurs from the edges of the web. The pressure in the passages remains essentially constant around the drum, producing uniform elevated pressures under the entire web. Elevated pressure behind the web significantly improves overall heat transfert, thereby allowing higher deposition rates and other process advantages.
摘要翻译：改变冷却鼓（14）以改善滚筒与布置在滚筒周围的柔性幅材基片（20）之间的热传递。鼓表面（22）包含一系列通道（44）和分配孔（46）。工作气体注入这些通道并从分配孔流出到卷筒和滚筒之间的空间中。盖（32）防止工作气体从未被卷筒纸覆盖的区域中的通道中逸出，并将工作气体供应到鼓罩上的通道。一旦气体在通道中，泄漏只从网的边缘发生。通道中的压力在鼓周围保持基本恒定，在整个幅材下产生均匀的升高的压力。幅材后面的高压显着地改善了总体传热，从而允许更高的沉积速率和其它工艺优点。

2. 发明申请

WO2002086937A1 DIPOLE ION SOURCE 审中-公开
标题翻译： DIPOLE离子源
公开(公告)号：WO2002086937A1
公开(公告)日：2002-10-31
申请号：PCT/US2002/011541
申请日：2002-04-10
申请人： APPLIED PROCESS TECHNOLOGIES , MADOCKS, John, E.
发明人： MADOCKS, John, E.
IPC分类号： H01J27/00
CPC分类号： H01J27/14 , C23C16/50 , C23C16/505 , C23C16/545 , H01J37/32623 , H01J37/3266 , H01J37/3277 , H05H1/14
摘要： A dipole ion source (Figure 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode (4) creating an electric field penetrating the magnetic field and confining electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves an ion beam on the substrate.
摘要翻译：偶极子离子源（图1）包括两个阴极表面，基板（1）和极（3）; 其中在所述基板和所述极之间限定间隙; 包括压缩端的非对称镜像磁场，其中所述衬底位于所述磁场的较小压缩端中; 和产生穿透磁场并将电子限制在连续霍尔电流回路中的电场的阳极（4），其中非对称磁场用于衬底上的离子束。

3. 发明申请

WO2002086932A1 MAGNETIC MIRROR PLASMA SOURCE 审中-公开
标题翻译：磁电镜等离子体源
公开(公告)号：WO2002086932A1
公开(公告)日：2002-10-31
申请号：PCT/US2002/011542
申请日：2002-04-10
申请人： APPLIED PROCESS TECHNOLOGIES , MADOCKS, John, E.
发明人： MADOCKS, John, E.
IPC分类号： H01J7/24
CPC分类号： H01J27/14 , C23C16/50 , C23C16/505 , C23C16/545 , H01J37/32623 , H01J37/3266 , H01J37/3277 , H05H1/14
摘要： The preferred embodiments described herein provide a magnetic mirror plasma source. While the traditional magnetic/electrostatic confinement method is ideal for many applications, some processes are not best served with this arrangement. The preferred embodiments described herein present a new technique to confine electrons (3) to produce a low pressure, dense plasma directly on a substrate surface (75). With these preferred embodiments, a combination of electrostatic and mirror magnetic confinement is implemented. The result is a novel plasma source that has unique and important advantages enabling advancements in PECVD, etching, and plasma treatment processes.
摘要翻译：本文所述的优选实施例提供了磁镜等离子体源。虽然传统的磁/静电约束方法对于许多应用来说是理想的，但是一些过程并不是最好的配合。本文所述的优选实施例提出了限制电子（3）直接在衬底表面（75）上产生低压致密等离子体的新技术。利用这些优选实施例，实现了静电和镜面磁约束的组合。结果是一种新颖的等离子体源，其具有独特且重要的优点，可实现PECVD，蚀刻和等离子体处理工艺的进步。

4. 发明申请

WO2002086185A1 PENNING DISCHARGE PLASMA SOURCE 审中-公开
标题翻译： PENNING排放等离子体源
公开(公告)号：WO2002086185A1
公开(公告)日：2002-10-31
申请号：PCT/US2002/011473
申请日：2002-04-10
申请人： APPLIED PROCESS TECHNOLOGIES , MADOCKS, John, E.
发明人： MADOCKS, John, E.
IPC分类号： C23C14/35
CPC分类号： H01J27/14 , C23C16/50 , C23C16/505 , C23C16/545 , H01J37/32623 , H01J37/3266 , H01J37/3277 , H05H1/14
摘要： The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.
摘要翻译：本文所述的优选实施例提供了Penning放电等离子体源。与Penning放电类似的磁场和电场布置有效地捕获两个表面之间的区域中的电子霍尔电流。当衬底（10）位于至少一个电极（11,12）附近并且相对于等离子体移动时，根据所使用的工艺气体等离子体处理，涂覆或以其它方式进行改性，过程压力。这种限制安排产生了与现有技术相似的戏剧性结果。使用这种新的来源，PECVD，等离子体蚀刻，等离子体处理，溅射或其他等离子体工艺的许多应用将大大改进或可能。特别地，使用柔性网（10）的应用受益。

5. 发明申请

WO2016172429A1 CHAMBER VALVE 审中-公开
标题翻译：气门阀
公开(公告)号：WO2016172429A1
公开(公告)日：2016-10-27
申请号：PCT/US2016/028768
申请日：2016-04-22
申请人： GENERAL PLASMA, INC. , MADOCKS, John, E.
发明人： MADOCKS, John, E.
IPC分类号： F16K3/06 , F16K3/10 , F16K51/02 , F16K3/02 , F16K3/18
CPC分类号： F16K3/06 , F16K3/0218 , F16K3/0254 , F16K3/10 , F16K3/182 , F16K51/02
摘要： A chamber valve (100) for use in processes requiring vacuum pressures has a compact design which minimizes the space needed for the valve in the travel direction. The chamber valve gate (116) is moveable between a first position in which the gate is offset from the portal (110), and a second position in which the gate is aligned with the portal. The gate will move into alignment with the portal while remaining within a plane parallel or nearly parallel to the portal.
摘要翻译：用于需要真空压力的工艺的腔室阀（100）具有紧凑的设计，其最小化了阀在行进方向上所需的空间。腔室阀门（116）可在其中门从门（110）偏移的第一位置和门与入口对准的第二位置之间移动。门将移动与门户对齐，同时保持在与门户平行或几乎平行的平面内。

6. 发明申请

WO2006007504A1 CYLINDRICAL TARGET WITH OSCILLATING MAGNET FROM MAGNETRON SPUTTERING 审中-公开
标题翻译：从MAGNETRON SPUTTERING振荡磁铁的圆柱体目标
公开(公告)号：WO2006007504A1
公开(公告)日：2006-01-19
申请号：PCT/US2005/023059
申请日：2005-06-30
申请人： CARDINAL CG COMPANY , GENERAL PLASMA, INC. , HARTIG, Klaus , SMITH, Steve, E. , MADOCKS, John, E.
发明人： HARTIG, Klaus , SMITH, Steve, E. , MADOCKS, John, E.
IPC分类号： H01J37/34
CPC分类号： H01J37/3455 , H01J37/3405 , H01J37/3423 , H01J37/3497
摘要： In some embodiments, the invention includes a cylindrical cathode target assembly for use in sputtering target material onto a substrate that comprises a generally cylindrical target, mean for rotating the target about its axis during a sputtering operation, an elongated magnet carried within the target for generation of a plasma-containing magnetic field exterior to but adjacent the target, a framework for supporting the magnet against rotation within the target, and a power train for causing the magnet to oscillate within and axially of the target in a substantially asynchronous manner to promote generally uniform target utilization along its length, as well as its method of use. In some embodiments, the magnet is oscillated in response to rotation of the target.
摘要翻译：在一些实施例中，本发明包括用于将目标材料溅射到基板上的圆柱形阴极靶组件，其包括大致圆柱形的靶，意味着在溅射操作期间使靶绕其轴线旋转，在靶内携带的细长磁体产生位于目标外部但邻近目标的等离子体磁场，用于支撑磁体以防止目标内的旋转的框架和用于使磁体以基本上异步的方式在目标内部和轴向振荡的传动系，以促进一般沿其长度的均匀目标利用率及其使用方法。在一些实施例中，磁体响应于目标的旋转而振荡。

7. 发明申请

WO2016172666A1 PUSH-TO-CONNECT AND PULL-TO-DISCONNECT QUICK COUPLING 审中-公开
标题翻译：按键连接和拉断连接快速耦合
公开(公告)号：WO2016172666A1
公开(公告)日：2016-10-27
申请号：PCT/US2016/029105
申请日：2016-04-25
申请人： MADOCKS, John, E. , GENERAL PLASMA. INC.
发明人： MADOCKS, John, E.
IPC分类号： F16L37/23
CPC分类号： F16L37/23
摘要： A quick coupling for connecting fluid lines with one-handed push-to-connect and pull-to- disconnect operation is provided. The quick coupling achieves this preferred functionality with a minimum number parts, the quick coupling having only one spring and one dynamic seal. In addition to fluid carrying applications the quick coupling can be used for tool holding and power transmission.
摘要翻译：提供了一种快速连接，用于连接流体管路与单手按钮式连接和拉脱式连接操作。快速联轴器具有最小数量的优选功能，快速接头仅具有一个弹簧和一个动态密封。除了流体承载应用之外，快速接头可用于刀具保持和动力传动。

8. 发明申请

WO2008014332A3 METHODS AND APPARATUSES FOR DIRECTING AN ION BEAM SOURCE 审中-公开
公开(公告)号：WO2008014332A3
公开(公告)日：2008-01-31
申请号：PCT/US2007/074341
申请日：2007-07-25
申请人： CARDINAL CG COMPANY , GENERAL PLASMA, INC. , GERMAN, John , HARTIG, Klaus , MADOCKS, John, E.
发明人： GERMAN, John , HARTIG, Klaus , MADOCKS, John, E.
IPC分类号： H01J27/14 , H01J37/08 , C23C14/22 , C23C14/56
摘要： A method and apparatus for directing an ion beam toward a surface of a substrate is disclosed. Certain embodiments of the invention relate generally to ion beam sources adapted to direct ion beams toward a surface of a substrate at an oblique angle of incidence relative to the surface. Certain embodiments of the invention are adapted to direct two ion beam portions toward a substrate surface, the ion beam portions having substantially equal throw distances. Preferred embodiments of the invention may be useful in etching applications, where the angle of incidence and throw distance of two ion beam portions are well suited for etching the surface of a substrate.

9. 发明申请

WO2002086193A1 PLASMA TREATMENT APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：WO2002086193A1
公开(公告)日：2002-10-31
申请号：PCT/US2002/011189
申请日：2002-04-09
申请人： APPLIED PROCESS TECHNOLOGIES, INC.
发明人： MADOCKS, John, E.
IPC分类号： C23C16/503
CPC分类号： H01J37/32623 , C23C14/352 , C23C16/503 , H01J37/3266
摘要： Magnetically enhanced glow discharge devices (100) are disclosed for the purpose of PECVD, etching or treating a substrate (101) in a vacuum chamber. Two cathode (102, 103, 107, 108) surfaces are separated by a gap (162). A mirror magnetic field (111) emanates from the cathode (102, 103, 107, 108) surfaces and passes through the gap (162). A mirror magnetic field (111) emanates from the cathode (102, 103, 107, 108) surfaces and passes through the gap (162). An anode structure (105, 106) forms diverging electric fields (112, 113) pass through the magnetic field (111) 360 degrees around the dipole magnetic field (111). A closed loop electron trap (115, Fig. 5) is formed by the diverging electric fields (112, 113) and the expanding magnetic field (111, Fig. 5) in the gap (162). With a chamber pressure in the range of 0.1 to 100 mTorr and an applied voltage between the cathode (102, 103, 107, 108) and anode (105, 106) surfaces, a plasma (115) is formed in the electron trap (115) and in the plane of the trap. By shaping the plasma (115) poles and exposing the sides of the cathode (102, 103, 107, 108) surfaces to the substrate (101), the created Hall current of the plasma (115) can be brought into direct contact with the substrate (101).
摘要翻译：公开了用于PECVD，蚀刻或处理真空室中的衬底（101）的目的的磁性增强辉光放电装置（100）。两个阴极（102,103,107,108）表面被间隙（162）隔开。镜面磁场（111）从阴极（102,103,107,108）表面发射并穿过间隙（162）。镜面磁场（111）从阴极（102,103,107,108）表面发射并穿过间隙（162）。阳极结构（105,106）形成围绕偶极子磁场（111）绕360度通过磁场（111）的发散电场（112,113）。闭环电子阱（图5中的115）由间隙（162）中的发散电场（112,113）和扩展磁场（图5中的111）形成。在腔室压力为0.1至100mTorr的范围内以及阴极（102,103,108,108）和阳极（105,106）之间的施加电压之间，在电子阱（115）中形成等离子体（115））和陷阱的平面。通过对等离子体（115）极进行成形并将阴极（102,103,107,108）的表面暴露于基板（101），等离子体（115）的所产生的霍尔电流可以与基板（101）。

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