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1. 发明申请

WO2012111009A2 HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES 审中-公开
公开(公告)号：WO2012111009A2
公开(公告)日：2012-08-23
申请号：PCT/IL2012/050046
申请日：2012-02-14
申请人： YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. , RAMOT AT TEL-AVIV UNIVERSITY LTD. , COHEN, Guy , MILLO, Oded , MOCATTA, David , RABANI, Eran , BANIN, Uri
发明人： COHEN, Guy , MILLO, Oded , MOCATTA, David , RABANI, Eran , BANIN, Uri
IPC分类号： H01L29/06 , B01J13/00 , C09K11/08 , C09K11/62
CPC分类号： H01L29/0665 , B01J13/0039 , B82Y10/00 , C09K11/54 , C09K11/61 , C09K11/62 , C09K11/64 , C09K11/88 , C09K11/881 , C09K11/883 , H01L21/02601 , H01L21/22 , H01L29/167 , H01L29/207 , H01L29/227 , H01L29/365 , H01L33/18
摘要： Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers.
摘要翻译：这里，提供了重掺杂的胶体半导体纳米晶体和用于将杂质引入半导体纳米颗粒的方法，提供了带隙的控制，费米能量和载流子的存在。

2. 发明申请

WO2012111009A8 HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES 审中-公开
公开(公告)号：WO2012111009A8
公开(公告)日：2012-08-23
申请号：PCT/IL2012/050046
申请日：2012-02-14
申请人： YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. , RAMOT AT TEL-AVIV UNIVERSITY LTD. , COHEN, Guy , MILLO, Oded , MOCATTA, David , RABANI, Eran , BANIN, Uri
发明人： COHEN, Guy , MILLO, Oded , MOCATTA, David , RABANI, Eran , BANIN, Uri
IPC分类号： H01L29/06 , B01J13/00 , C09K11/08 , C09K11/62
摘要： Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

3. 发明申请

WO2012111009A3 HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES 审中-公开
公开(公告)号：WO2012111009A3
公开(公告)日：2012-08-23
申请号：PCT/IL2012/050046
申请日：2012-02-14
申请人： YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. , RAMOT AT TEL-AVIV UNIVERSITY LTD. , COHEN, Guy , MILLO, Oded , MOCATTA, David , RABANI, Eran , BANIN, Uri
发明人： COHEN, Guy , MILLO, Oded , MOCATTA, David , RABANI, Eran , BANIN, Uri
IPC分类号： H01L29/06 , B01J13/00 , C09K11/08 , C09K11/62
摘要： Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

4. 发明申请

WO2012110930A3 SATELLITE RECEIVER WITH INTERFERING SIGNAL CANCELLATION 审中-公开
公开(公告)号：WO2012110930A3
公开(公告)日：2012-08-23
申请号：PCT/IB2012/050622
申请日：2012-02-12
申请人： NOVELSAT LTD. , WAJCER, Daniel , COHEN, Guy
发明人： WAJCER, Daniel , COHEN, Guy
IPC分类号： G06F1/12
摘要： A method for communication includes receiving a Radio Frequency (RF) channel containing a desired signal conforming to a first air interface and an interfering signal conforming to a second air interface. A first receiver (52) configured for the first air interface and a second receiver (56) configured for the second air interface are synchronized to a common frequency and timing reference (84). While the first and second receivers are synchronized, the desired signal is decoded from the RF channel using the first receiver to generate a first output, the interfering signal is decoded from the RF channel using the second receiver to generate a second output, and the desired signal is reconstructed while suppressing the interfering signal by jointly processing the first and second outputs.

5. 发明申请

WO2011067069A1 OMEGA SHAPED NANOWIRE FIELD EFFECT TRANSISTORS 审中-公开
标题翻译：欧米茄形纳米效应晶体管
公开(公告)号：WO2011067069A1
公开(公告)日：2011-06-09
申请号：PCT/EP2010/066961
申请日：2010-11-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , SLEIGHT, Jeffrey , BANGSARUNTIP, Sarunya , COHEN, Guy , CHANG, Josephine
发明人： SLEIGHT, Jeffrey , BANGSARUNTIP, Sarunya , COHEN, Guy , CHANG, Josephine
IPC分类号： H01L21/335 , H01L29/775
CPC分类号： H01L29/775 , B82Y10/00 , H01L21/845 , H01L27/1211 , H01L29/0665 , H01L29/42392 , H01L29/66439 , H01L29/66628 , H01L29/66772 , H01L29/78645 , H01L29/78696
摘要： A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire (110) on a semiconductor substrate, (100) forming a first gate structure on a first portion of the nanowire, forming a first protective spacer (604) adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material (902) on exposed cross sections of the nanowire to form a first source region and a first drain region.
摘要翻译：一种形成纳米线场效应晶体管（FET）器件的方法包括在半导体衬底上形成纳米线（110），（100）在纳米线的第一部分上形成第一栅极结构，形成相邻的第一保护间隔物（604）到达第一栅极结构的侧壁和从第一栅极结构延伸的纳米线的部分，去除未被第一间隔物保护的纳米线的暴露部分，以及在纳米线的暴露横截面上外延生长掺杂半导体材料（902）以形成第一源区和第一漏区。

6. 发明申请

WO2007080586A2 RD ALGORITHM IMPROVEMENT FOR NROM TECHNOLOGY 审中-公开
标题翻译： NROM技术的RD算法改进
公开(公告)号：WO2007080586A2
公开(公告)日：2007-07-19
申请号：PCT/IL2007/000040
申请日：2007-01-10
申请人： SAIFUN SEMICONDUCTORS LTD. , RIZEL, Arik , COHEN, Guy
发明人： RIZEL, Arik , COHEN, Guy
IPC分类号： G06F7/38
CPC分类号： G11C16/0475 , G11C16/26
摘要： Selecting a read voltage level for a NVM cell by using an initial value for the read voltage and performing a read operation, comparing an actual number of bits found to an expected number of bits and, if there is a discrepancy between the actual number and the expected number, adjusting the read voltage level, based on variable data such as statistics available, level occupation, neighbor level, previous chunks data, and other data used during read, program or erase. For example, based on a number of missing bits, or upon a result of a previous read operation, or a result obtained at another program level, or upon how many times the memory cell has been cycled, or upon how many memory cells are at each program level, or on a number of bits at another program level in a selected chunk of memory.
摘要翻译：通过使用读取电压的初始值并执行读取操作来选择NVM单元的读取电压电平，将发现的实际位数与预期位数进行比较，如果实际数字与基于可用数据，如可用统计数据，级别占用，邻居级别，先前块数据以及在读取，编程或擦除期间使用的其他数据的可变数据来调整读取电压电平。例如，基于多个丢失比特，或者基于先前读取操作的结果，或者在另一程序级别获得的结果，或者存储器单元已循环多少次，或者存储器单元处于多少每个节目级别，或者在所选择的存储器块中的另一程序级的多个位上。

7. 发明申请

WO2005041108A2 A METHOD CIRCUIT AND SYSTEM FOR READ ERROR DETECTION IN A NON-VOLATILE MEMORY ARRAY 审中-公开
标题翻译：一种用于非易失性存储阵列中读取误差检测的方法电路和系统
公开(公告)号：WO2005041108A2
公开(公告)日：2005-05-06
申请号：PCT/IL2004/000983
申请日：2004-10-27
申请人： SAIFUN SEMICONDUCTORS LTD. , COHEN, Guy
发明人： COHEN, Guy
IPC分类号： G06K
CPC分类号： G11C11/5642 , G11C16/04 , G11C16/28 , G11C16/3436 , G11C16/3454 , G11C16/3459 , G11C29/00 , G11C29/026 , G11C29/028 , G11C29/42 , G11C29/52 , G11C2029/0409 , G11C2211/5634 , G11C2211/5644
摘要： The present invention is a method, circuit and system for determining a reference voltage to be used in reading cells programmed to a given program state. Some embodiments of the present invention relate to a system, method and circuit for establishing a set of operating reference cells to be used in operating (e.g. reading) cells in a NVM block or array. As part of the present invention, at least a subset of cells of the NVM block or array may be read and the number of cells found at a given state associated with the array may be compared to one or more check sum values obtained during programming of the at least a subset of cells. A Read Verify threshold reference voltage associated with the given program state or associated with an adjacent state may be adjusted based on the result of the comparison.
摘要翻译：本发明是用于确定在读取编程到给定编程状态的单元中使用的参考电压的方法，电路和系统。本发明的一些实施例涉及用于建立将用于操作（例如读取）NVM块或阵列中的单元的一组操作参考单元的系统，方法和电路。作为本发明的一部分，可以读取NVM块或阵列的单元的至少一个子集，并且可以将在与该阵列相关联的给定状态下找到的单元的数量与在编程期间获得的一个或多个校验和值进行比较至少一个小区子集。可以基于比较结果来调整与给定程序状态相关联或与相邻状态相关联的读取验证阈值参考电压。

8. 发明申请

WO2016054109A1 TRASH CANS 审中-公开
标题翻译：垃圾桶
公开(公告)号：WO2016054109A1
公开(公告)日：2016-04-07
申请号：PCT/US2015/053037
申请日：2015-09-29
申请人： YANG, Frank , WOLBERT, David , COHEN, Guy , YEE, Phillip , BRYANT, Teddy
发明人： YANG, Frank , WOLBERT, David , COHEN, Guy , YEE, Phillip , BRYANT, Teddy
IPC分类号： B65D43/26
CPC分类号： B65F1/163 , B65F1/06 , B65F1/1473 , B65F1/1607 , B65F1/1623 , B65F2001/1661 , B65F2250/111 , B65F2250/112 , B65F2250/114
摘要： Various trash can assemblies are disclosed. The trash can assembly can include a body and a lid that is movable between open and closed positions. The trash can assembly can be provided with a resistive load control system that controls the rate of movement of the lid from the open position toward the closed position and/or from the closed position toward the open position. The trash can assembly can be provided with an energy recapture system that translates mechanical energy into electrical energy through an electric generator. The electrical energy can be provided to other components of the trash can assembly, such as an ion generator that discharges ions into an interior of the trash can assembly to provide odor control.
摘要翻译：公开了各种垃圾桶组件。垃圾桶组件可以包括主体和可在打开位置和关闭位置之间移动的盖子。垃圾桶组件可以设置有电阻负载控制系统，其控制盖从打开位置朝向关闭位置和/或从关闭位置朝向打开位置的移动速率。垃圾桶组件可以设置有能量再捕获系统，其通过发电机将机械能转换成电能。电能可以提供给垃圾桶组件的其它部件，例如将离子排放到垃圾桶组件的内部以提供气味控制的离子发生器。

9. 发明申请

WO2012138758A1 METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开
标题翻译：提供改进过程控制质量标准的方法和系统
公开(公告)号：WO2012138758A1
公开(公告)日：2012-10-11
申请号：PCT/US2012/032169
申请日：2012-04-04
申请人： KLA-TENCOR CORPORATION , KANDEL, Daniel , COHEN, Guy , KLEIN, Dana , LEVINSKI, Vladimir , SAPIENS, Noam , SHULMAN, Alex , KAMENETSKY, Vladimir , AMIT, Eran , VAKSHTEIN, Irina
发明人： KANDEL, Daniel , COHEN, Guy , KLEIN, Dana , LEVINSKI, Vladimir , SAPIENS, Noam , SHULMAN, Alex , KAMENETSKY, Vladimir , AMIT, Eran , VAKSHTEIN, Irina
IPC分类号： G01N37/00
CPC分类号： G03F7/70633 , G01N2223/6116
摘要： The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.
摘要翻译：本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

10. 发明申请

WO2012044702A3 METHOD AND SYSTEM FOR PROVIDING TOOL INDUCED SHIFT USING A SUB-SAMPLING SCHEME 审中-公开
公开(公告)号：WO2012044702A3
公开(公告)日：2012-04-05
申请号：PCT/US2011/053743
申请日：2011-09-28
申请人： KLA-TENCOR CORPORATION , IZIKSON, Pavel , COHEN, Guy
发明人： IZIKSON, Pavel , COHEN, Guy
IPC分类号： H01L21/66
摘要： The present invention may include measuring tool induced shift (TIS) on at least one wafer of a lot of wafers via an omniscient sampling process, randomly generating a plurality of sub-sampling schemes, each of the set of randomly generated sub-sampling schemes having the same number of sampled fields, measuring TIS at each location of each of the randomly generated sub-sampling schemes, approximating a set of TIS values for each of the randomly generated sub-sampling schemes utilizing the TIS measurements from each of the randomly generated sub-sampling schemes, wherein each set of TIS values for each of the randomly generated sub-sampling schemes is calculated utilizing an interpolation process configured to approximate a TIS value for each location not included in a randomly generated sub-sampling scheme, and determining a selected sub-sampling scheme by comparing each of the calculated sets of TIS values to the measured TIS of the omniscient sampling process.

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