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1. 发明申请

WO2012033639A1 LINEAR CLUSTER DEPOSITION SYSTEM 审中-公开
标题翻译：线性聚集体沉积系统
公开(公告)号：WO2012033639A1
公开(公告)日：2012-03-15
申请号：PCT/US2011/048996
申请日：2011-08-24
申请人： VEECO PROCESS EQUIPMENT, INC. , QUINN, William E. , GURARY, Alexander , PARANJPE, Ajit , FERREIRA, Maria D. , FREMGEN, Roger P. , ARMOUR, Eric A.
发明人： QUINN, William E. , GURARY, Alexander , PARANJPE, Ajit , FERREIRA, Maria D. , FREMGEN, Roger P. , ARMOUR, Eric A.
IPC分类号： H01L21/67 , C23C16/52 , C23C16/455 , C23C16/54 , C30B35/00 , C23C16/44
CPC分类号： C30B25/025 , C23C16/4412 , C23C16/45561 , C23C16/52 , C23C16/54 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/12 , C30B25/14 , C30B29/40 , C30B35/005 , G03G15/751 , H01L21/0262 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67727 , H01L21/67748 , H01L21/67751
摘要： A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.
摘要翻译：线性簇沉积系统包括以线性水平布置定位的多个反应室。第一和第二反应物气体歧管连接到每个反应室的相应工艺气体输入端口。具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口相连。基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中的至少一个基板。选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。

2. 发明申请

WO2013012549A3 MULTI-CHAMBER CVD PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2013012549A3
公开(公告)日：2013-01-24
申请号：PCT/US2012/045179
申请日：2012-07-02
申请人： VEECO INSTRUMENTS INC. , PARANJPE, Ajit , ARMOUR, Eric A. , QUINN, William E.
发明人： PARANJPE, Ajit , ARMOUR, Eric A. , QUINN, William E.
IPC分类号： H01L21/205
摘要： A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable.

3. 发明申请

WO2012082225A1 GAS INJECTION SYSTEM FOR CHEMICAL VAPOR DEPOSITION USING SEQUENCED VALVES 审中-公开
标题翻译：使用顺序阀进行化学气相沉积的气体注入系统
公开(公告)号：WO2012082225A1
公开(公告)日：2012-06-21
申请号：PCT/US2011/057227
申请日：2011-10-21
申请人： VEECO INSTRUMENTS INC. , QUINN, William E. , ARMOUR, Eric A.
发明人： QUINN, William E. , ARMOUR, Eric A.
IPC分类号： C23C16/00
CPC分类号： C23C16/52 , C23C16/18 , C23C16/45561 , C23C16/45574
摘要： A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
摘要翻译：用于化学气相沉积系统的气体注入系统包括气体歧管，其包括多个阀，其中多个阀中的每一个具有耦合到处理气体源的输入和用于提供处理气体的输出。多个气体喷射器中的每一个具有耦合到多个阀中的一个的输出端的输入端和位于化学气相沉积反应器的多个区域之一中的输出端。具有多个输出的控制器，其中所述多个输出中的每一个输出耦合到所述多个阀之一的控制输入。控制器指示多个阀中的至少一些阀在预定时间打开以向化学气相沉积反应器中的多个区域中的每一个提供期望的气流。

4. 发明申请

WO2010144302A2 ROLL-TO-ROLL CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：辊式化学蒸气沉积系统
公开(公告)号：WO2010144302A2
公开(公告)日：2010-12-16
申请号：PCT/US2010/037331
申请日：2010-06-03
申请人： VEECO INSTRUMENTS INC. , ARMOUR, Eric A. , QUINN, William E. , SFERLAZZO, Piero
发明人： ARMOUR, Eric A. , QUINN, William E. , SFERLAZZO, Piero
IPC分类号： H01L21/205 , C23C16/54
CPC分类号： C23C16/545 , C23C16/45502 , C30B25/14
摘要： A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.
摘要翻译：卷对卷CVD系统包括在CVD处理期间将幅材输送通过沉积室的至少两个辊。沉积室限定了通过所述纤维网通过的通道，同时被所述至少两个辊输送。沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

5. 发明申请

WO2010144303A2 CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：连续进料化学蒸气沉积系统
公开(公告)号：WO2010144303A2
公开(公告)日：2010-12-16
申请号：PCT/US2010/037335
申请日：2010-06-03
申请人： VEECO INSTRUMENTS INC. , ARMOUR, Eric A. , QUINN, William E. , SFERLAZZO, Piero
发明人： ARMOUR, Eric A. , QUINN, William E. , SFERLAZZO, Piero
IPC分类号： H01L21/205
CPC分类号： C23C16/54 , C23C16/4582 , C30B25/025 , C30B35/00
摘要： A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.
摘要翻译：连续进料CVD系统包括在CVD处理期间通过沉积室输送晶片的晶片输送机构。淀积室限定一个通道，用于晶片通过，同时由晶片输送机构输送。沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

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