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    • 2. 发明申请
    • METHOD OF ERROR CORRECTION IN MBC FLASH MEMORY
    • MBC闪存中错误校正方法
    • WO2007043042A3
    • 2008-12-31
    • PCT/IL2006001159
    • 2006-10-04
    • UNIV RAMOTLITSYN SIMONALROD IDANSHARON ERANMURIN MARKLASSER MENACHEM
    • LITSYN SIMONALROD IDANSHARON ERANMURIN MARKLASSER MENACHEM
    • G11C29/00
    • G06F11/1072
    • A plurality of logical pages is stored in a MBC flash memory (42) along with corresponding ECC bits, with at least one of the MBC cells storing bits from more than one logical page, and with at least one of the ECC bits applying to two or more of the logical pages. When the pages are read from the memory (42), the data bits as read are corrected using the ECC bits as read. Alternatively, a joint, systematic or non-systematic ECC codeword is computed for two or more of the logical pages and is stored instead of those logical pages. When the joint codeword is read, the logical bits are recovered from the codeword as read. The scope of the invention also includes corresponding memory devices (54, 56, 5S), the controllers of such memory devices (54, 56, 58), and also computer-readable storage media bearing computer-readable code for implementing the methods.
    • 多个逻辑页面与相应的ECC位一起存储在MBC闪速存储器(42)中,其中至少一个MBC单元存储来自多于一个逻辑页面的位,并且至少一个ECC位应用于两个 或更多的逻辑页面。 当从存储器(42)读取页面时,读取的数据位使用被读取的ECC位进行校正。 或者,针对两个或多个逻辑页面计算联合的,系统的或非系统的ECC码字,并且存储该代码字而不是那些逻辑页面。 当读取联合码字时,从读取的码字中恢复逻辑比特。 本发明的范围还包括对应的存储设备(54,56,5S),这些存储设备(54,56,58)的控制器,以及用于实现该方法的具有计算机可读代码的计算机可读存储介质。
    • 5. 发明申请
    • MEMORY-EFFICIENT LDPC DECODING
    • 存储器高效的LDPC解码
    • WO2008142683A3
    • 2009-02-12
    • PCT/IL2008000685
    • 2008-05-20
    • UNIV RAMOTSHARON ERANLITSYN SIMONALROD IDAN
    • SHARON ERANLITSYN SIMONALROD IDAN
    • H03M13/11
    • H03M13/114H03M13/6505
    • To decode a representation of a codeword that encodes K information bits as N>K codeword bits, messages are exchanged between N bit nodes and N-K check nodes of a graph in which E edges connect the bit nodes and the check nodes. While messages are exchanged, fewer than E of the messages are stored, and/or fewer than N soft estimates of the codeword bits are stored. In some embodiments, the messages are exchanged only within sub-graphs and between the sub-graphs and one or more external check nodes. While messages are exchanged, the largest number of stored messages is the number of edges in the sub-graph with the most edges plus the number of edges that connect the sub-graphs to the external check node(s), and/or the largest number of stored soft estimates is the number of bit nodes in the sub-graph with the most bit nodes.
    • 为了将编码K个信息比特的码字的表示解码为N个K个码字比特,消息在其中E个边缘连接比特节点和校验节点的图的N个比特节点和N-K个校验节点之间进行交换。 当消息被交换时,存储少于E个消息,和/或存储少于N个码字比特的软估计。 在一些实施例中,消息仅在子图中以及子图和一个或多个外部校验节点之间交换。 当消息被交换时,最大数量的存储消息是具有最多边缘的子图中的边数加上将子图连接到外部校验节点的边数,和/或最大 存储的软估计数是具有最多位节点的子图中的比特节点的数量。
    • 6. 发明申请
    • AVOIDING ERRORS IN A FLASH MEMORY BY USING SUBSTITUTION TRANSFORMATIONS
    • 通过使用替代变换避免闪存中的错误
    • WO2008081426B1
    • 2008-08-14
    • PCT/IL2007001567
    • 2007-12-19
    • UNIV RAMOTALROD IDANSHARON ERANLITSYN SIMON
    • ALROD IDANSHARON ERANLITSYN SIMON
    • G06F11/10G11C7/10G11C11/56
    • G11C11/5628G06F11/1072G11C7/1006G11C29/00
    • Memory circuitry, or a memory device controller, or a host of a memory device, store an input string of M N-tuples of bits by selecting a substitution transformation in accordance with the input string and by applying the transformation to the input string to provide a transformed string of M N-tuples of bits. M or more memory cells are programmed to represent the transformed string and preferably also to represent a key of the transformation. Alternatively, the circuitry selectively programs each of M or more cells to a respective one of 2N states. The circuitry or the controller selects a mapping that maps the binary numbers in [0,2N-1] into respective states in accordance with the input string and the circuitry uses the mapping to program M cells to represent the input string. Preferably, a key of the mapping is stored in the memory in association with the M cells.
    • 存储器电路或存储器件控制器或存储器件的主机通过根据输入字符串选择替换变换并通过将变换应用于输入字符串来存储M个N元组的输入串,以提供 一个M位元组的变换字符串。 M个或更多个存储器单元被编程以表示变换的字符串,并且优选地也表示转换的关键字。 或者,电路选择性地将M个或更多个单元中的每一个编程为2N个状态中的相应的一个。 电路或控制器根据输入字符串选择将[0,2N-1]中的二进制数映射到各自状态的映射,并且电路使用映射来编程M个单元来表示输入字符串。 优选地,映射的密钥与M个单元相关联地存储在存储器中。
    • 9. 发明申请
    • ERROR CORRECTION DECODING BY TRIAL AND ERROR
    • 错误修正通过尝试和错误解码
    • WO2007135657A3
    • 2009-04-09
    • PCT/IL2006001248
    • 2006-10-30
    • UNIV RAMOTSHARON ERANALROD IDANLITSYN SIMON
    • SHARON ERANALROD IDANLITSYN SIMON
    • H03M13/00
    • H03M13/3738H03M13/3707H03M13/6502H03M13/6511
    • A representation of a codeword is decoded by applying a first decoder of the codeword to the representation of the codeword. If applying the first decoder fails to decode the representation of the codeword then a second decoder of the codeword is applied to the representation of the codeword. Preferably, applying the first decoder consumes less power and is faster than applying the second decoder. Data are ported by encoding the data as a codeword, exporting the codeword to a corrupting medium, importing a representation of the codeword, and applying a first decoder to the representation of the codeword. If applying the first decoder fails to decode the representation of the codeword then a second decoder of the codeword is applied to the representation of the codeword.
    • 通过将码字的第一解码器应用于码字的表示来解码码字的表示。 如果应用第一解码器不能解码码字的表示,则码字的第二解码器被应用于码字的表示。 优选地,应用第一解码器消耗较少的功率并且比应用第二解码器更快。 数据通过将数据编码为码字来移植,将码字导出到破坏性介质,导入码字的表示,以及将第一解码器应用于码字的表示。 如果应用第一解码器不能解码码字的表示,则码字的第二解码器被应用于码字的表示。