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1. 发明申请

WO2005089521A3 HIGH POWER VCSELS WITH TRANSVERSE MODE CONTROL 审中-公开
标题翻译：具有横向模式控制的高功率VCSELS
公开(公告)号：WO2005089521A3
公开(公告)日：2006-12-07
申请号：PCT/US2005009478
申请日：2005-03-21
申请人： UNIV ARIZONA , SAMAL NIGAMANANDA , JOHNSON SHANE , ZHANG YONG-HANG
发明人： SAMAL NIGAMANANDA , JOHNSON SHANE , ZHANG YONG-HANG
IPC分类号： H01S3/102 , H01S3/038 , H01S5/183
CPC分类号： H01S5/1833 , H01S5/0207 , H01S5/024 , H01S5/18311 , H01S5/18313 , H01S2301/166 , H01S2301/20
摘要： A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. The high power of a VCSEL thus formed is improved still more by good heat removal by either formation of a via through the substrate and gold plating on top and bottom of the VCSEL (including the via) or by lifting the VCSEL structure from the substrate and locating it on a heat sink.
摘要翻译：诸如VCSEL的单模高功率激光器件形成有两个氧化物孔，一个在有源区或空腔的每一侧上。选择孔径的尺寸以及从孔到腔中心的距离或最佳的近似高斯电流密度分布。通过在VCSEL（包括通孔）的顶部和底部形成通孔以及通过衬底的顶部和底部的金镀层或者通过从衬底提升VCSEL结构，通过良好的散热来改善如此形成的VCSEL的高功率，以及将其放在散热器上。

2. 发明申请

WO0133677A2 LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM 审中-公开
标题翻译：长波长光子晶体InGaNPAsSb型I型和II型活性层用于GAAS材料系统
公开(公告)号：WO0133677A2
公开(公告)日：2001-05-10
申请号：PCT/US0041775
申请日：2000-11-01
申请人： UNIV ARIZONA , JOHNSON SHANE , DOWD PHILIP , BRAUN WOLFGANG , ZHANG YONG HANG , GUO CHANG ZHI
发明人： JOHNSON SHANE , DOWD PHILIP , BRAUN WOLFGANG , ZHANG YONG-HANG , GUO CHANG-ZHI
IPC分类号： H01S5/323 , H01S5/183 , H01S5/34 , H01S5/343 , H01S3/00
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/32366 , H01S5/3422 , H01S5/34306 , H01S5/3434
摘要： The invention discloses improved structures of light-processing (e.g., light-emitting and light-absorbing/sensing) devices, in particular Vertical Cavity Surface Emitting Lasers (VCSELs), such as may find use in telecommunications applications. The disclosed VSCAL devices and production methods provide for an active region having a quantum well structure grown on GaAs-containing substrates, thus providing processing compatibility for light having wavelength in the range 1.0 to 1.6 mu m. The active region structure combines strain-compensating barriers with different band alignments in the quantum wells to achieve a long emission wavelength while at the same time decreasing the strain in the structure. The improved functioning of the devices disclosed results from building them with multicomponent alloy layers having a large number of constituents. The invention discloses as a key constituent in the proposed alloy layers for the active region a substance, such as nitrogen (N), suitable for reducing bandgap energy (i.e., increasing light wavelength) associated with the layers, while at the same time lowering the lattice constant associated with the structure and hence lowering strain.
摘要翻译：本发明公开了光处理（例如，发光和光吸收/感测）装置，特别是垂直腔面发射激光器（VCSEL）的改进的结构，例如可用于电信应用。所公开的VSCAL装置和制造方法提供了在含GaAs衬底上生长的量子阱结构的有源区，从而为波长在1.0至1.6μm的光提供处理兼容性。有源区结构将应变补偿屏障与量子阱中的不同带对准结合在一起，以实现长发射波长，同时降低结构中的应变。所公开的装置的改进的功能通过用具有大量成分的多组分合金层来构建它们。本发明公开了用于活性区域的所提出的合金层中的关键组成部分，适合于降低与层相关的带隙能量（即，增加光波长）的物质，例如氮（N），同时降低晶格常数与结构相关，从而降低应变。

3. 发明申请

WO0133677A9 LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM 审中-公开
标题翻译：长波长光子晶体InGaNPAsSb型I型和II型活性层用于GAAS材料系统
公开(公告)号：WO0133677A9
公开(公告)日：2002-08-15
申请号：PCT/US0041775
申请日：2000-11-01
申请人： UNIV ARIZONA , JOHNSON SHANE , DOWD PHILIP , BRAUN WOLFGANG , ZHANG YONG-HANG , GUO CHANG-ZHI
发明人： JOHNSON SHANE , DOWD PHILIP , BRAUN WOLFGANG , ZHANG YONG-HANG , GUO CHANG-ZHI
IPC分类号： H01S5/323 , H01S5/183 , H01S5/34 , H01S5/343 , H01L31/00 , H01L31/18 , H01L33/00 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/32366 , H01S5/3422 , H01S5/34306 , H01S5/3434
摘要： The invention discloses improved structures of light-processing (e.g., light-emitting and light-absorbing/sensing) devices, in particular Vertical Cavity Surface Emitting Lasers (VCSELs), such as may find use in telecommunications applications. The disclosed VSCAL devices and production methods provide for an active region having a quantum well structure grown on GaAs-containing substrates, thus providing processing compatibility for light having wavelength in the range 1.0 to 1.6 mu m. The active region structure combines strain-compensating barriers with different band alignments in the quantum wells to achieve a long emission wavelength while at the same time decreasing the strain in the structure. The improved functioning of the devices disclosed results from building them with multicomponent alloy layers having a large number of constituents. The invention discloses as a key constituent in the proposed alloy layers for the active region a substance, such as nitrogen (N), suitable for reducing bandgap energy (i.e., increasing light wavelength) associated with the layers, while at the same time lowering the lattice constant associated with the structure and hence lowering strain.
摘要翻译：本发明公开了光处理（例如，发光和光吸收/感测）装置，特别是垂直腔面发射激光器（VCSEL）的改进的结构，例如可用于电信应用。所公开的VSCAL装置和制造方法提供了在含GaAs衬底上生长的量子阱结构的有源区，从而为波长在1.0至1.6μm的光提供处理兼容性。有源区结构将应变补偿屏障与量子阱中的不同带对准结合在一起，以实现长发射波长，同时降低结构中的应变。所公开的装置的改进的功能通过用具有大量成分的多组分合金层来构建它们。本发明公开了用于活性区域的所提出的合金层中的关键组成部分，适合于降低与层相关的带隙能量（即，增加光波长）的物质，例如氮（N），同时降低晶格常数与结构相关，从而降低应变。

4. 发明申请

WO0033433B1 COMPOUND SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC DEVICES 审中-公开
公开(公告)号：WO0033433B1
公开(公告)日：2000-11-09
申请号：PCT/US9928576
申请日：1999-12-03
申请人： UNIV ARIZONA , ZHANG YONG HANG , DOWD PHILIP , BRAUN WOLFGANG
发明人： ZHANG YONG-HANG , DOWD PHILIP , BRAUN WOLFGANG
IPC分类号： H01S5/02 , H01S5/12 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/32 , H01L31/00 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/0211 , H01S5/12 , H01S5/125 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/2063 , H01S5/3211 , H01S5/32358 , H01S5/3403 , H01S5/3422 , H01S5/3425 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H01S2302/00 , Y10S257/918
摘要： A compound semiconductor device is provided that includes a substrate and an active region disposed above the substrate. The active region includes at least two different pseudomorphic layers, the first layer having the form InxGa1-xPyAszSb1-y-z, and the second layer having the form InqGa1-qPrAssSb1-r-s. The first layer includes at least In, Ga, and As, and the second layer includes at least Ga, As, and Sb. It is preferable for the substrate to be GaAs or AlpGa1-pAs (0

5. 发明申请

WO0033433A3 COMPOUND SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC DEVICES 审中-公开
标题翻译：用于光电子器件的化合物半导体结构
公开(公告)号：WO0033433A3
公开(公告)日：2000-09-14
申请号：PCT/US9928576
申请日：1999-12-03
申请人： UNIV ARIZONA , ZHANG YONG HANG , DOWD PHILIP , BRAUN WOLFGANG
发明人： ZHANG YONG-HANG , DOWD PHILIP , BRAUN WOLFGANG
IPC分类号： H01S5/02 , H01S5/12 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/32 , H01L31/00 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/0211 , H01S5/12 , H01S5/125 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/2063 , H01S5/3211 , H01S5/32358 , H01S5/3403 , H01S5/3422 , H01S5/3425 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H01S2302/00 , Y10S257/918
摘要： A compound semiconductor device is provided that includes a substrate and an active region disposed above the substrate. The active region includes at least two different pseudomorphic layers, the first layer having the form InxGa1-xPyAszSb1-y-z, and the second layer having the form InqGa1-qPrAssSb1-r-s. The first layer includes at least In, Ga, and As, and the second layer includes at least Ga, As, and Sb. It is preferable for the substrate to be GaAs or AlpGa1-pAs (0
摘要翻译：提供了一种化合物半导体器件，其包括衬底和设置在衬底上方的有源区。有源区包括至少两个不同的假晶层，第一层具有In x Ga 1-x P y As z Sb 1-y z的形式，并且第二层具有In q Ga 1-q Pr a SS Sb 1-r-s的形式。第一层至少包含In，Ga和As，第二层至少包含Ga，As和Sb。衬底最好是GaAs或AlpGa1-pAs（0

6. 发明申请

WO2013043809A2 HETEROSTRUCTURE SI SOLAR CELLS USING WIDE-BANDGAP SEMICONDUCTORS 审中-公开
标题翻译：异质结构SI太阳能电池使用宽带半导体
公开(公告)号：WO2013043809A2
公开(公告)日：2013-03-28
申请号：PCT/US2012056237
申请日：2012-09-20
申请人： UNIV ARIZONA
发明人： ZHANG YONG-HANG , LI JING-JING , DING DING
IPC分类号： H01L31/074
CPC分类号： H01L31/074 , H01L31/02008 , H01L31/02363 , Y02E10/50
摘要： To improve the efficiency of heterostructure silicon photovoltaic devices, II-VI wide bandgap semiconductor layers can replace the TCO/doped amorphous silicon/intrinsic amorphous silicon layers on the front side or on both sides of the silicon bulk layer. For example, photovoltaic devices are described containing a first contact electrode; a first doped II- VI semiconductor layer disposed over the first contact electrode; a doped crystalline silicon layer disposed over the first doped II-VI semiconductor layer; and a second contact electrode disposed over the doped silicon layer, where one of the doped crystalline silicon layer and the first doped II-VI semiconductor layer is n-doped and the other is p-doped.
摘要翻译：为了提高异质结硅光伏器件的效率，II-VI宽带隙半导体层可以取代硅本体层的正面或两面上的TCO /掺杂非晶硅/本征非晶硅层。例如，描述了包含第一接触电极的光伏器件; 设置在第一接触电极上的第一掺杂II-VI半导体层; 设置在第一掺杂II-VI半导体层上的掺杂晶体硅层; 以及设置在掺杂硅层上方的第二接触电极，其中掺杂晶体硅层和第一掺杂II-VI半导体层中的一个是n掺杂的而另一个是p掺杂的。

7. 发明申请

WO2004034437A3 IMPROVED PERFORMANCE OF ELECTRONIC AND OPTOELECTRONIC DEVICES USING A SURFACTANT DURING EPITAXIAL GROWTH 审中-公开
标题翻译：在外延生长期间使用表面活性剂改善电子和光电器件的性能
公开(公告)号：WO2004034437A3
公开(公告)日：2004-11-25
申请号：PCT/US0332179
申请日：2003-10-10
申请人： UNIV ARIZONA STATE
发明人： ZHANG YONG-HANG , SADOFYEV YURI , JOHNSON SHANE RICHARD
IPC分类号： H01L21/203 , H01L29/205 , H01L31/0304 , H01L33/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02631 , H01L21/02658
摘要： A method of fabricating a semiconductor device (5), such as a high electron mobility transistor, a vertical cavity surface emitting laser, an edge emitting laser, a heterostructure bipolar transistor, a resonant tunneling diode, and the like, is disclosed that includes the steps of depositing a plurality of layers of semiconductor material including at least one active area (16) with opposed major surfaces and a cladding layer (14.22) adjacent each opposed major surface. In the disclosure, the semiconductor material is an aluminum/galium arsenide semiconductor system. At least one of the active area (16) and cladding layers (14, 22) are deposited at relatively low temperatures in the presence of a surfactant, such as antimony, indium, bismuth or thallium to produce greatly improved carrier mobility and surface morphology.
摘要翻译：公开了一种制造诸如高电子迁移率晶体管，垂直腔表面发射激光器，边缘发射激光器，异质结双极晶体管，谐振隧穿二极管等的半导体器件（5）的方法，其包括沉积包括具有相对主表面的至少一个有源区域（16）和邻近每个相对主表面的包覆层（14.22）的多层半导体材料的步骤。在本公开中，半导体材料是铝/砷化镓半导体系统。在诸如锑，铟，铋或铊的表面活性剂存在下，在相对低的温度下，沉积有源区域（16）和覆层（14,22）中的至少一个，以产生极大改善的载流子迁移率和表面形态。

8. 发明申请

WO2004034437B1 IMPROVED PERFORMANCE OF ELECTRONIC AND OPTOELECTRONIC DEVICES USING A SURFACTANT DURING EPITAXIAL GROWTH 审中-公开
标题翻译：在外延生长期间使用表面活性剂改善电子和光电器件的性能
公开(公告)号：WO2004034437B1
公开(公告)日：2005-02-17
申请号：PCT/US0332179
申请日：2003-10-10
申请人： UNIV ARIZONA STATE
发明人： ZHANG YONG-HANG , SADOFYEV YURI , JOHNSON SHANE RICHARD
IPC分类号： H01L21/203 , H01L29/205 , H01L31/0304 , H01L33/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02631 , H01L21/02658
摘要： A method of fabricating a semiconductor device (5), such as a high electron mobility transistor, a vertical cavity surface emitting laser, an edge emitting laser, a heterostructure bipolar transistor, a resonant tunneling diode, and the like, is disclosed that includes the steps of depositing a plurality of layers of semiconductor material including at least one active area (16) with opposed major surfaces and a cladding layer (14.22) adjacent each opposed major surface. In the disclosure, the semiconductor material is an aluminum/galium arsenide semiconductor system. At least one of the active area (16) and cladding layers (14, 22) are deposited at relatively low temperatures in the presence of a surfactant, such as antimony, indium, bismuth or thallium to produce greatly improved carrier mobility and surface morphology.
摘要翻译：公开了一种制造诸如高电子迁移率晶体管，垂直腔表面发射激光器，边缘发射激光器，异质结双极晶体管，谐振隧穿二极管等的半导体器件（5）的方法，其包括沉积包括具有相对主表面的至少一个有源区域（16）和邻近每个相对主表面的包覆层（14.22）的多层半导体材料的步骤。在本公开中，半导体材料是铝/砷化镓半导体系统。在诸如锑，铟，铋或铊的表面活性剂存在下，在相对低的温度下，沉积有源区域（16）和覆层（14,22）中的至少一个，以产生极大改善的载流子迁移率和表面形态。

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