专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008112673A2 DYNAMIC TEMPERATURE BACKSIDE GAS CONTROL FOR IMPROVED WITHIN-SUBSTRATE PROCESSING UNIFORMITY 审中-公开
标题翻译：动态温度背后气体控制改善基板加工均匀性
公开(公告)号：WO2008112673A2
公开(公告)日：2008-09-18
申请号：PCT/US2008056478
申请日：2008-03-11
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , SUNDARARAJAN RADHA , CHEN LEE , FUNK MERRITT
发明人： SUNDARARAJAN RADHA , CHEN LEE , FUNK MERRITT
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/68735 , C23C16/4586 , C23C16/466 , H01L21/67069 , H01L21/67248 , H01L21/68714
摘要： Control of radial or non-radial temperature distribution is controlled across a substrate during processing to compensate for non-uniform effects, including non-uniformities arising from system or process. Temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck (substrate support table 20, 20a) to vary heat conduction across the wafer. Ports (26, 26a) in the support table (20, 20a) are grouped, and gas to or from the groups is separately controlled by different valves (32) responsive to a controller (35) that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities. Wafer deformation is affected by separately controlling the pressure of the backside gas at different ports (26, 26a) to control the local force exerted on the backside of the substrate, by separately dynamically controlling valves (32) affecting gas flow to a port (26, 26a) and ports (26, 26a) surrounding said port (26, 26a).
摘要翻译：径向或非径向温度分布的控制在处理过程中跨越衬底进行控制，以补偿不均匀的影响，包括由系统或过程产生的不均匀性。通过在晶片支撑卡盘（衬底支撑台20,20a）上的不同区域上不同地流动背面气体来改变温度，优选动态地改变，以改变横跨晶片的热传导。支撑台（20,20a）中的端口（26,26a）被分组，并且响应于控制器（35），单独地由不同的阀（32）控制到组或从组的气体，控制器控制每个区域中的气体压力在空间上优选地动态地控制晶片温度以补偿系统和工艺的不均匀性。通过分别控制不同端口（26,2b）处的背侧气体的压力来控制施加在基板的背面上的局部力，通过分别动态地控制影响到端口（26）的气体流动的阀（32）来影响晶片变形，26a）和围绕所述端口（26,2a）的端口（26,26a）。

2. 发明申请

WO2012135351A3 ION ENERGY ANALYZER, METHODS OF ELECTRICAL SIGNALING THEREIN, AND METHODS OF MANUFACTURING AND OPERATING THE SAME 审中-公开
标题翻译：离子能量分析仪，其中的电信号方法以及制造和操作相同的方法
公开(公告)号：WO2012135351A3
公开(公告)日：2012-11-15
申请号：PCT/US2012030960
申请日：2012-03-28
申请人： TOKYO ELECTRON LTD , CHEN LEE , LANE BARTON , FUNK MERRITT , ZHAO JIANPING , SUNDARARAJAN RADHA
发明人： CHEN LEE , LANE BARTON , FUNK MERRITT , ZHAO JIANPING , SUNDARARAJAN RADHA
IPC分类号： H01J49/04
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： An ion energy analyzer (74, 122, 174) for determining an ion energy distribution of a plasma (66) and comprising an entrance grid (80, 126, 160), a selection grid (82, 134, 134'), and an ion collector (84, 136, 136'). The entrance grid (80, 126, 160) includes a first plurality of openings dimensioned to be less than a Deb ye length for the plasma (66). The ion collector (84, 136, 136') is coupled to the entrance grid (80, 126, 160) via a first voltage source (182). The selection grid (82, 134, 134') is positioned between the entrance grid (80, 126, 160) and the ion collector (84, 136, 136') and is coupled to the entrance grid (80, 126, 160) via a second voltage source (180). An ion current meter (106) is coupled to the ion collector (84, 136, 136') to measure an ion flux onto the ion collector (84, 136, 136') and transmit a signal related thereto.
摘要翻译： 1。一种用于确定等离子体（66）的离子能量分布的离子能量分析器（74,122,174），所述离子能量分析器包括入口网格（80,126,160），选择网格（82,134,134'）和离子收集器（84,136,136'）。入口栅格（80,126,160）包括第一多个开口，其大小小于等离子体（66）的长度。离子收集器（84,136,136'）经由第一电压源（182）耦合到入口栅格（80,126,160）。选择栅格（82,134,134'）位于入口栅格（80,126,160）和离子收集器（84,136,136'）之间，并且与入口栅格（80,126,160）耦合，经由第二电压源（180）。离子电流计（106）耦合到离子收集器（84,136,136'）以测量离子收集器（84,136,136'）上的离子通量并传送与其相关的信号。

3. 发明申请

WO2007117436A3 MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY 审中-公开
标题翻译：使用光学测量法测量在波形上形成的损伤结构
公开(公告)号：WO2007117436A3
公开(公告)日：2008-11-27
申请号：PCT/US2007008266
申请日：2007-03-29
申请人： TOKYO ELECTRON LTD , LALLY KEVIN , FUNK MERRITT , SUNDARARAJAN RADHA
发明人： LALLY KEVIN , FUNK MERRITT , SUNDARARAJAN RADHA
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4788 , G01N21/95607 , H01L22/12
摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.
摘要翻译：使用光学计量测量在半导体晶片上形成的损坏结构的方法包括将入射光束引导到损坏的结构上。从损坏的结构接收衍射光束。处理接收的衍射光束以确定受损结构的未损伤部分的轮廓并且测量损坏结构的电介质损伤的量。

4. 发明申请

WO2007117736A3 DYNAMIC METROLOGY SAMPLING FOR A DUAL DAMASCENE PROCESS 审中-公开
标题翻译：动态计量取样的一个双重的damaasCENE过程
公开(公告)号：WO2007117736A3
公开(公告)日：2007-11-29
申请号：PCT/US2007060951
申请日：2007-01-24
申请人： TOKYO ELECTRON LTD , IBM , PRAGER DANIEL , FUNK MERRITT , NATZLE WESLEY , SUNDARARAJAN RADHA
发明人： PRAGER DANIEL , FUNK MERRITT , NATZLE WESLEY , SUNDARARAJAN RADHA
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre¬ processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre¬ processing confidence map are within confidence limits established for the damascene process.
摘要翻译：一种监测双镶嵌过程的方法，包括计算镶嵌过程的预处理置信度图，所述预处理置信度图包括晶片上第一组裸片的置信度数据。当预处理置信度图中的一个或多个值不在针对镶嵌处理建立的置信度限制内时，为镶嵌处理建立扩展的预处理测量配方。当预处理置信度图中的一个或多个值在针对镶嵌处理建立的置信限内时，建立用于第一镶嵌处理的减少的预处理测量配方。

5. 发明申请

WO2007123762A2 DAMAGE ASSESSMENT OF A WAFER USING OPTICAL METROLOGY 审中-公开
标题翻译：使用光学方程的波形损伤评估
公开(公告)号：WO2007123762A2
公开(公告)日：2007-11-01
申请号：PCT/US2007008018
申请日：2007-03-29
申请人： TOKYO ELECTRON LTD , LALLY KEVIN , FUNK MERRITT , SUNDARARAJAN RADHA
发明人： LALLY KEVIN , FUNK MERRITT , SUNDARARAJAN RADHA
IPC分类号： H01L21/44
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L22/12
摘要： A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage- assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage- assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage- assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.
摘要翻译：评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损伤量。损伤评估数据包括由光学计量过程确定的损伤量。为双镶嵌工艺创建了第一个损伤评估图。第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。将损伤评估图中的一个或多个值与针对双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。

6. 发明申请

WO2007123698A2 CREATING A LIBRARY FOR MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY 审中-公开
标题翻译：创建一个用于测量使用光学方法在波形上形成的损伤结构的图书馆
公开(公告)号：WO2007123698A2
公开(公告)日：2007-11-01
申请号：PCT/US2007007934
申请日：2007-03-29
申请人： TOKYO ELECTRON LTD , FUNK MERRITT , LALLY KEVIN , SUNDARARAJAN RADHA
发明人： FUNK MERRITT , LALLY KEVIN , SUNDARARAJAN RADHA
IPC分类号： G06F19/00 , G01N21/00
CPC分类号： G01N21/95607
摘要： A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.
摘要翻译：使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。从第一损坏结构接收衍射光束。基于接收的衍射光束获得测量的衍射信号。计算第一个模拟衍射信号。第一模拟衍射信号对应于第一损坏结构的假想轮廓。假想轮廓包括未损坏的电介质部分和损坏的电介质部分。将测量的衍射信号与第一模拟衍射信号进行比较。如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是存储在库中。

7. 发明申请

WO2007117737A3 DYNAMIC METROLOGY SAMPLING WITH WAFER UNIFORMITY CONTROL 审中-公开
标题翻译：动态计量采样与均匀控制
公开(公告)号：WO2007117737A3
公开(公告)日：2008-04-17
申请号：PCT/US2007060953
申请日：2007-01-24
申请人： TOKYO ELECTRON LTD , IBM , FUNK MERRITT , SUNDARARAJAN RADHA , PRAGER DANIEL , NATZLE WESLEY
发明人： FUNK MERRITT , SUNDARARAJAN RADHA , PRAGER DANIEL , NATZLE WESLEY
IPC分类号： G06F19/00
CPC分类号： H01L22/12
摘要： A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, bi-layer mask data, and BARC layer data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.
摘要翻译：提出了一种处理晶片的方法，其包括使用测量的晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，bi 层掩模数据和BARC层数据。为晶片计算至少一个预处理预测图。计算晶片的预处理置信图。预处理置信图包括晶片上的多个管芯的一组置信数据。当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。然后创建包含优先测量站点的新测量配方。

8. 发明申请

WO2007117738A2 DYNAMIC METROLOGY SAMPLING WITH WAFER UNIFORMITY CONTROL 审中-公开
标题翻译：动态计量采样与均匀控制
公开(公告)号：WO2007117738A2
公开(公告)日：2007-10-18
申请号：PCT/US2007060960
申请日：2007-01-24
申请人： TOKYO ELECTRON LTD , IBM , FUNK MERRITT , SUNDARARAJAN RADHA , PRAGER DANIEL , NATZLE WESLEY
发明人： FUNK MERRITT , SUNDARARAJAN RADHA , PRAGER DANIEL , NATZLE WESLEY
IPC分类号： G06K9/00
CPC分类号： G03F7/70625 , G03F7/70525
摘要： A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At least one pre-processing prediction map is calculated for the wafer. A pre- processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.
摘要翻译：提出了一种处理晶片的方法，其包括使用测量的用于晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，或掩码数据。为晶片计算至少一个预处理预测图。为晶片计算预处理置信图。预处理置信图包括晶片上的多个管芯的一组置信数据。当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。然后创建包含优先测量站点的新测量配方。

9. 发明申请

WO2007117434A2 MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY 审中-公开
标题翻译：使用光学测量法测量在波形上形成的损伤结构
公开(公告)号：WO2007117434A2
公开(公告)日：2007-10-18
申请号：PCT/US2007008264
申请日：2007-03-29
申请人： TOKYO ELECTRON LTD , LALLY KEVIN , FUNK MERRITT , SUNDARARAJAN RADHA
发明人： LALLY KEVIN , FUNK MERRITT , SUNDARARAJAN RADHA
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/4788 , G01N21/9501 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.
摘要翻译：一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。定义损坏的周期结构的假设剖面。具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。未损伤部分和损坏部分具有与它们相关联的不同特性。使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。将测得的衍射信号与模拟衍射信号进行比较。如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

10. 发明申请

WO2006088545A2 FAULT DETECTION AND CLASSIFICATION (FDC) USING A RUN-TO-RUN CONTROLLER 审中-公开
标题翻译：故障检测和分类（FDC）使用运行控制器
公开(公告)号：WO2006088545A2
公开(公告)日：2006-08-24
申请号：PCT/US2005045546
申请日：2005-12-15
申请人： TOKYO ELECTRON LTD , WILLIS JAMES E , FUNK MERRTT , LALLY KEVIN , PINTO KEVIN , TOMOYASU MASAYUKI , PETERSON RAYMOND , SUNDARARAJAN RADHA
发明人： WILLIS JAMES E , FUNK MERRTT , LALLY KEVIN , PINTO KEVIN , TOMOYASU MASAYUKI , PETERSON RAYMOND , SUNDARARAJAN RADHA
IPC分类号： G06F19/00
CPC分类号： G05B19/4184 , G05B2219/31356 , G05B2219/32179 , G05B2219/45031 , Y02P80/40 , Y02P90/14 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.
摘要翻译：一种用于在APC系统中实现FDC的方法，包括从存储器接收FDC模型; 将FDC模型提供给过程模型计算引擎; 使用过程模型计算引擎计算预测的依赖过程参数的向量; 接收包括一组配方参数的处理配方，向处理模块提供处理配方; 执行过程配方以产生测量的依赖过程参数的向量; 计算预测的依赖过程参数的向量与测量的依赖过程参数的向量之间的差; 将差值与阈值进行比较; 并且当差值大于阈值时声明故障状况。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式