专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006057711A2 METHOD FOR PREPARING SOLID PRECURSOR TRAY FOR USE IN SOLID PRECURSOR EVAPORATION SYSTEM 审中-公开
标题翻译：用于固体前驱体蒸发系统的固体前驱体托盘的制备方法
公开(公告)号：WO2006057711A2
公开(公告)日：2006-06-01
申请号：PCT/US2005/035596
申请日：2005-10-03
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , SUZUKI, Kenji , GUIDOTTI, Emmanuel , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke , MALHOTRA, Sandra, G. , McFEELY, Fenton , YOUNG, Robert, R., Jr.
发明人： SUZUKI, Kenji , GUIDOTTI, Emmanuel , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke , MALHOTRA, Sandra, G. , McFEELY, Fenton , YOUNG, Robert, R., Jr.
IPC分类号： C23C16/448
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system (50, 150, 300, 300') configured for use in a thin film deposition system (1, 100), such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays (330, 340) of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray (330, 340), using one or more of dipping techniques, spin-on techniques, and sintering techniques.
摘要翻译：在被配置为用于诸如热化学气相沉积（TCVD）的薄膜沉积系统（1,100）中的固体前体蒸发系统（50,150,300,300'）中，一种用于制备一个或多个托盘的方法 330,340）固体前体。固体前体可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种形成在涂覆基材上，例如托盘（330,340）上。

2. 发明申请

WO2008039606A1 INTEGRATED SUBSTRATE PROCESSING IN A VACUUM PROCESSING TOOL 审中-公开
标题翻译：真空加工工具中的集成基板加工
公开(公告)号：WO2008039606A1
公开(公告)日：2008-04-03
申请号：PCT/US2007/075710
申请日：2007-08-10
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , HARA, Masamichi , MIZUSAWA, Yasushi
发明人： ISHIZAKA, Tadahiro , HARA, Masamichi , MIZUSAWA, Yasushi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/54 , C23C14/566
摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8 x 10 -8 Torr or lower, preferably 5 x 10 -8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.
摘要翻译：提供了用于Cu金属化中的集成基板处理的方法和系统。该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，基质。多个处理系统和基板传送系统保持背景气体的基本压力为6.8×10 -8乇或更低，优选为5×10 -8乇或更低，在整个沉积过程中。根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。根据另一个实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

3. 发明申请

WO2006057711A3 METHOD FOR PREPARING SOLID PRECURSOR TRAY FOR USE IN SOLID PRECURSOR EVAPORATION SYSTEM 审中-公开
标题翻译：制备用于固体前驱体蒸发系统的固体前驱体托盘的方法
公开(公告)号：WO2006057711A3
公开(公告)日：2006-07-13
申请号：PCT/US2005035596
申请日：2005-10-03
申请人： TOKYO ELECTRON LTD , IBM , SUZUKI KENJI , GUIDOTTI EMMANUEL , LEUSINK GERRIT J , HARA MASAMICHI , KUROIWA DAISUKE , MALHOTRA SANDRA G , MCFEELY FENTON , YOUNG ROBERT R JR
发明人： SUZUKI KENJI , GUIDOTTI EMMANUEL , LEUSINK GERRIT J , HARA MASAMICHI , KUROIWA DAISUKE , MALHOTRA SANDRA G , MCFEELY FENTON , YOUNG ROBERT R JR
IPC分类号： C23C16/448
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system (50, 150, 300, 300') configured for use in a thin film deposition system (1, 100), such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays (330, 340) of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray (330, 340), using one or more of dipping techniques, spin-on techniques, and sintering techniques.
摘要翻译：在配置用于薄膜沉积系统（1,100）中的固体前驱体蒸发系统（50,150,300,300'）中，例如热化学气相沉积（TCVD），用于制备一个或多个托盘（描述了固体前体的形式。可以使用浸渍技术，旋涂技术和烧结技术中的一种或多种，在涂层基材例如托盘（330,340）上形成固体前体。

4. 发明申请

WO2006057710A1 A SOLID PRECURSOR DELIVERY SYSTEM COMPRISING REPLACEABLE STACKABLE TRAYS 审中-公开
标题翻译：一个包含可更换堆叠托盘的固体前驱体输送系统
公开(公告)号：WO2006057710A1
公开(公告)日：2006-06-01
申请号：PCT/US2005/035583
申请日：2005-10-03
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GUIDOTTI, Emmanuel , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
发明人： SUZUKI, Kenji , GUIDOTTI, Emmanuel , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
IPC分类号： C23C16/448
CPC分类号： C23C16/16 , C23C16/4481
摘要： A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system (50, 150, 300, 300') is configured to be coupled to the process chamber (10, 110) of a thin film deposition system (1, 100), and it includes a base tray (330) with one or more stackable upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (370, 370') and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').
摘要翻译：用于与高电导，多托盘固体前体蒸发系统（50,150,300,300'）结合高电导蒸气输送系统使用的可替换的前体托盘被描述为通过增加固体前体的暴露表面积来提高沉积速率。多托盘固体前体蒸发系统（50,150,300,300'）被配置为耦合到薄膜沉积系统（1,100）的处理室（10,110），并且其包括底盘（330）具有一个或多个可堆叠的上托盘（340）。每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。例如，载气在膜前体（350）内向内流动，并且垂直向上流过可堆叠托盘（370,370'）内的流动通道（318）并且通过固体前体蒸发系统中的出口（322） 50,150,300,300'）。

5. 发明申请

WO2007111779A2 METHOD OF INTEGRATING PEALD TA-CONTAINING FILMS INTO CU METALLIZATION 审中-公开
标题翻译：将含PE复合膜复合成金属化的方法
公开(公告)号：WO2007111779A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/003212
申请日：2007-02-05
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , HARA, Masamichi , FAGUET, Jacques , MIZUSAWA, Yasushi
发明人： ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , HARA, Masamichi , FAGUET, Jacques , MIZUSAWA, Yasushi
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

6. 发明申请

WO2006058310A1 MULTI-TRAY FILM PRECURSOR EVAPORATION SYSTEM AND THIN FILM DEPOSITION SYSTEM INCORPORATING SAME 审中-公开
标题翻译：多层膜前驱体蒸发系统和薄膜沉积系统
公开(公告)号：WO2006058310A1
公开(公告)日：2006-06-01
申请号：PCT/US2005/043018
申请日：2005-11-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GUIDOTTI, Emmanuel, P. , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
发明人： SUZUKI, Kenji , GUIDOTTI, Emmanuel, P. , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
CPC分类号： C23C16/4481 , C23C16/16
摘要： A high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system (40, 140) is described for increasing deposition rate by increasing exposed surface area of solid precursor (350). The multi-tray solid precursor evaporation system (50, 150, 300, 300') includes a base tray (330) with one or more upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (340) and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').
摘要翻译：描述了与高电导蒸气输送系统（40,140）耦合的高电导多托盘固体前体蒸发系统（50,150,300,300'），以通过增加固体前体（350）的暴露表面积来提高沉积速率）。多托盘固体前体蒸发系统（50,150,300,300'）包括具有一个或多个上托盘（340）的基托（330）。每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。例如，载气在膜前体（350）上向内流动，并且垂直向上流过可堆叠托盘（340）内的流动通道（318）并通过固体前体蒸发系统（50,150）中的出口（322），300,300'）。

7. 发明申请

WO2007111779A8 METHOD OF INTEGRATING PEALD TA-CONTAINING FILMS INTO CU METALLIZATION 审中-公开
标题翻译：将含PE复合膜复合成金属化的方法
公开(公告)号：WO2007111779A8
公开(公告)日：2008-03-13
申请号：PCT/US2007003212
申请日：2007-02-05
申请人： TOKYO ELECTRON LTD , ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
发明人： ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，该系统被配置为执行PEALD处理，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

8. 发明申请

WO2007111779A3 METHOD OF INTEGRATING PEALD TA-CONTAINING FILMS INTO CU METALLIZATION 审中-公开
标题翻译：将含有PE的TA膜包含在CU金属化中的方法
公开(公告)号：WO2007111779A3
公开(公告)日：2007-12-06
申请号：PCT/US2007003212
申请日：2007-02-05
申请人： TOKYO ELECTRON LTD , ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
发明人： ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：一种形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将衬底布置在等离子体增强的原子层沉积（PEALD）系统的处理室中，该等离子体增强的原子层沉积（PEALD）系统被配置为执行PEALD工艺，使用PEALD工艺在衬底上沉积TaC或TaCN膜，并且修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以至少从沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜提供比沉积的TaCN膜更强的对金属膜的粘附。根据一个实施例，由TAIMATA和等离子体激发氢的交替曝光来沉积TaCN膜。

9. 发明申请

WO2007109410A3 METHOD AND APPARATUS FOR REDUCING PARTICLE CONTAMINATION IN A DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2007109410A3
公开(公告)日：2007-09-27
申请号：PCT/US2007/063285
申请日：2007-03-05
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi , HARA, Masamichi , MIZUSAWA, Yasushi
发明人： SUZUKI, Kenji , GOMI, Atsushi , HARA, Masamichi , MIZUSAWA, Yasushi
IPC分类号： C23C16/44
摘要： A method and system is described for reducing particle contamination of a substrate (25) in a deposition system (1). The deposition system comprises one or more particle diffusers (47) disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system (50), or the vapor delivery system (40), or the vapor distribution system (30), or two or more thereof.

10. 发明申请

WO2007109410A2 METHOD AND APPARATUS FOR REDUCING PARTICLE CONTAMINATION IN A DEPOSITION SYSTEM 审中-公开
标题翻译：减少沉积物中颗粒污染的方法和装置
公开(公告)号：WO2007109410A2
公开(公告)日：2007-09-27
申请号：PCT/US2007063285
申请日：2007-03-05
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , SUZUKI KENJI , GOMI ATSUSHI , HARA MASAMICHI , MIZUSAWA YASUSHI
发明人： SUZUKI KENJI , GOMI ATSUSHI , HARA MASAMICHI , MIZUSAWA YASUSHI
IPC分类号： C23C16/44
CPC分类号： C23C16/16 , C23C16/4481 , C23C16/45565 , C23C16/45568 , C23C16/45574
摘要： A method and system is described for reducing particle contamination of a substrate (25) in a deposition system (1). The deposition system comprises one or more particle diffusers (47) disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system (50), or the vapor delivery system (40), or the vapor distribution system (30), or two or more thereof.
摘要翻译：描述了用于减少沉积系统（1）中的基底（25）的颗粒污染的方法和系统。沉积系统包括设置在其中的一个或多个粒子扩散器（47），并构造成防止或部分地阻止膜前体颗粒的通过，或破坏或部分破坏膜前体颗粒。粒子扩散器可以安装在膜前体蒸发系统（50）或蒸汽输送系统（40）或蒸气分配系统（30）中，或者其两个或多个。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式