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1. 发明申请

WO2012083482A1 AN IMPROVEMENT ON IP FRAGMENTATION IN GTP TUNNEL 审中-公开
标题翻译： GTP隧道知识产权分类改进
公开(公告)号：WO2012083482A1
公开(公告)日：2012-06-28
申请号：PCT/CN2010/002102
申请日：2010-12-21
申请人： TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) , GU, Wei , GUO, Lei , LI, Xiao , LIU, Di , SUN, Lirong , XIA, Qi
发明人： GU, Wei , GUO, Lei , LI, Xiao , LIU, Di , SUN, Lirong , XIA, Qi
IPC分类号： H04L12/56
CPC分类号： H04L45/74 , H04L47/36 , H04W28/06 , H04W76/12 , H04W80/04
摘要： The present invention relates to a method for improving IP fragmentation and transmission of user payload between a User Equipment, UE (10), and a Peer Node, PN (14). The payload is transmitted through a transmission path enabled by at least a first (17,18) and a second (17,18) established tunnel, said tunnels connecting a first (11), (13) and a second (11, 13) node in a Packet Core Network, PCN. The method comprises the steps of: - The first node (11,13) fragments (19) at least one received payload packet (15) into fragments (16) on the basis of a minimum Maximum Transmission Unit, MTU, for an upper IP layer of the transmission path. - The first node (11,13) encapsulates (20) said fragments at the entry of the first tunnel (17, 18). What particularly characterizes the method is that it further comprises a step where the first node (11,13) determines (21) the MTU for the upper IP layer of the transmission path on the basis of an MTU of a lower IP layer of the transmission path and on the basis of the size of at least one additional tunnel header for the encapsulated fragments (16).
摘要翻译：本发明涉及一种用于改善用户设备，UE（10）和对等节点（PN）（14）之间的用户有效载荷的IP分段和传输的方法。有效载荷通过至少第一（17,18）和第二（17,18）建立的隧道启用的传输路径传输，所述隧道连接第一（11），（13）和第二（11,13）分组核心网络中的节点，PCN。该方法包括以下步骤： - 第一节点（11,13）根据用于较高IP的最小最大传输单元MTU将至少一个接收到的有效载荷分组（15）分段（19）成片段（16）传输路径层。 - 第一节点（11,13）在第一隧道（17,18）的入口处封装（20）所述片段。该方法的特征在于，其还包括步骤，其中第一节点（11,13）基于传输的较低IP层的MTU来确定（21）传输路径的上层IP的MTU 并且基于用于封装的片段（16）的至少一个附加隧道头部的大小。

2. 发明申请

WO2013120223A1 SMART 3GDT 审中-公开
公开(公告)号：WO2013120223A1
公开(公告)日：2013-08-22
申请号：PCT/CN2012/000175
申请日：2012-02-14
申请人： TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) , LIU, Di , XIA, Qi , DING, Huiping , SHA, Ping , QU, Zhiwei , YU, Zhao , GUO, Lei
发明人： LIU, Di , XIA, Qi , DING, Huiping , SHA, Ping , QU, Zhiwei , YU, Zhao , GUO, Lei
IPC分类号： H04W48/00
CPC分类号： H04W76/23 , H04L43/0894 , H04W24/04 , H04W24/08 , H04W76/22
摘要： A smart 3GDT schema has been disclosed, in detail, a method for controlling the communication of a network system has bee disclosed. The network system comprises a UE, a NodeB, a RNC, a SGSN, and a GW. The UE is arranged to be in communication with the RNC via the NodeB, and the RNC is arranged to be in communication with the SGSN which in turn being arranged to be in communication with the GW for non-3 GDT communication of the network system, or the RNC is arranged to be in communication with the GW for 3 GDT communication of the network system. In this method, statistics of payload transferred between the UE and the GW has been monitored, and if the statistics of payload within a predetermined time period exceeds a fist threshold, and the UE is in the non-3 GDT communication, then switching the non-3 GDT communication to the 3 GDT communication. The present application has also disclosed the SGSN, GW, and the network system adaptive to perform the method.
摘要翻译：已经公开了一种智能3GDT模式，其中公开了一种用于控制网络系统通信的方法。网络系统包括UE，NodeB，RNC，SGSN和GW。 UE经由NodeB与RNC通信，RNC被安排为与SGSN通信，SGSN又与GW进行通信，用于网络系统的非3 GDT通信，或者RNC被布置成与GW通信，用于网络系统的3GTT通信。在该方法中，已经监视了UE和GW之间传输的有效载荷的统计信息，并且如果在预定时间段内的有效载荷的统计信息超过了第一阈值，并且UE处于非3 GDT通信中， -3 GDT通信到3 GDT通信。本申请还公开了SGSN，GW和自适应网络系统来执行该方法。

3. 发明申请

WO2013059965A1 IPV6 TRANSITION TOOL HANDLING 审中-公开
标题翻译： IPV6 TRANSITION工具处理
公开(公告)号：WO2013059965A1
公开(公告)日：2013-05-02
申请号：PCT/CN2011/001803
申请日：2011-10-28
申请人： TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) , GUO, Lei
发明人： GUO, Lei
IPC分类号： H04L12/56
CPC分类号： H04W36/0022 , H04L61/6086 , H04W80/045
摘要： The present invention relates to a method for signalling in an infrastructure network comprising a Source Serving Node, S-SN, a Target SN, T-SN and a first Gateway. At least one Packet Data Network, PDN, bearer is established for a User Equipment, UE, when at least one PDN bearer is handed over from the S-SN to the T-TN. The network performs the steps of: - the T-SN sends (17) a modify bearer request to the first GW, said bearer request indicating that the T-SN does not support dual Internet Protocol, IP, addressing for said PDN bearer being handed over, - the first GW on the basis of the received modify bearer request (18) initiates a modify bearer procedure where a new Packet Data Network, PDN, bearer type for single IP addressing is defined, - the first GW further sends (19) a modify bearer response to the T-SN, said bearer response comprising information about the new PDN bearer type.
摘要翻译：本发明涉及一种用于在包括源服务节点，S-SN，目标SN，T-SN和第一网关的基础设施网络中进行信令的方法。当至少一个PDN承载从S-SN切换到T-TN时，为用户设备UE建立至少一个分组数据网络PDN，承载。网络执行以下步骤： - T-SN向第一GW发送（17）修改承载请求，所述承载请求指示T-SN不支持双重因特网协议，IP，正在移交的所述PDN承载的寻址根据接收到的修改承载请求（18），第一GW启动修改承载过程，其中定义了新的分组数据网络，用于单IP地址的PDN承载类型，第一GW进一步发送（19）修改对T-SN的承载响应，所述承载响应包括关于新的PDN承载类型的信息。

4. 发明申请

WO2013159693A1 GROUP III-V SEMICONDUCTOR DC TRANSFORMER AND METHOD FOR FORMING SAME 审中-公开
标题翻译：第III-V族半导体直流变压器及其形成方法
公开(公告)号：WO2013159693A1
公开(公告)日：2013-10-31
申请号：PCT/CN2013/074556
申请日：2013-04-23
申请人： GUO, Lei , ZHAO, Dongjing
发明人： GUO, Lei , ZHAO, Dongjing
IPC分类号： H02M3/02 , H01L31/18
CPC分类号： H01L31/173 , H02M3/04 , Y02E10/56
摘要： A group III-V semiconductor DC transformer and a method for forming the same are provided. The group III-V semiconductor DC transformer comprises: an isolation layer (3) with a material of transparent insulating dielectric; a plurality of group III-V semiconductor light emitting diodes (1) formed on one surface of the isolation layer (3) for emitting a working light with specified wavelength to convert an electric energy into an optical energy; a plurality of group III-V semiconductor photovoltaic cells (2) formed on one surface of the isolation layer (3) for absorbing the working light to convert the optical energy into the electric energy, in which a working light spectrum of each group III-V semiconductor light emitting diode (1) is matched with that of each group III-V semiconductor photovoltaic cell (2), and the isolation layer (3) is transparent to the working light.
摘要翻译：提供III-V族半导体DC变压器及其形成方法。 III-V族半导体DC变压器包括：具有透明绝缘介电材料的隔离层（3）; 多个III-V族半导体发光二极管（1），形成在所述隔离层（3）的一个表面上，用于发射具有特定波长的工作光以将电能转换为光能; 形成在隔离层（3）的一个表面上的用于吸收工作光以将光能转换成电能的多个III-V族半导体光伏电池（2），其中每组III- V型半导体发光二极管（1）与各III-V族半导体光伏电池（2）的配合，隔离层（3）对于工作光是透明的。

5. 发明申请

WO2012163046A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：半导体结构及其形成方法
公开(公告)号：WO2012163046A1
公开(公告)日：2012-12-06
申请号：PCT/CN2011/082109
申请日：2011-11-11
申请人： TSINGHUA UNIVERSITY , WANG, Jing , GUO, Lei
发明人： WANG, Jing , GUO, Lei
IPC分类号： H01L29/06 , H01L21/02 , H01L21/336
CPC分类号： H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02494 , H01L21/02502 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/30608 , H01L21/3065 , H01L29/66651 , H01L29/78
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a wafer (1100); a plurality of convex structures (1200) formed on the wafer (1100), in which every two adjacent convex structures (1200) are separated by a cavity in a predetermined pattern and arranged in an array, and the cavity between every two adjacent convex structures is less than 50nm in width; and a first semiconductor film (1300) formed on the plurality of convex structures (1200), in which a part of the first semiconductor film (1300) is spaced apart from the wafer (1100).
摘要翻译：提供半导体结构及其形成方法。半导体结构包括：晶片（1100）; 形成在所述晶片（1100）上的多个凸起结构（1200），其中每两个相邻凸起结构（1200）以预定图案以预定图案分隔并排列成阵列，并且每两个相邻凸起结构之间的空腔宽度小于50nm; 以及形成在所述多个凸起结构（1200）上的第一半导体膜（1300），其中所述第一半导体膜（1300）的一部分与所述晶片（1100）间隔开。

6. 发明申请

WO2012119418A1 STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：应变导电绝缘体结构及其形成方法
公开(公告)号：WO2012119418A1
公开(公告)日：2012-09-13
申请号：PCT/CN2011/078946
申请日：2011-08-25
申请人： TSINGHUA UNIVERSITY , WANG, Jing , XU, Jun , GUO, Lei
发明人： WANG, Jing , XU, Jun , GUO, Lei
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/76283 , H01L21/76251 , H01L29/7843 , H01L29/7846 , H01L29/7848 , H01L29/78684
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate (1100), in which an oxide insulating layer (1200) is formed on a surface of the silicon substrate (1100); a Ge layer (1300) formed on the oxide insulating layer (1200), in which a first passivation layer (1400) is formed between the Ge layer (1300) and the oxide insulating layer (1200); a gate stack (1600, 1700) formed on the Ge layer (1300), a channel region formed below the gate stack (1600, 1700), and a source (1800) and a drain (1800) formed on sides of the channel region; and a plurality of shallow trench isolation structures (1900) extending into the silicon substrate (1100) and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译：提供了一种应变绝缘体上的结构，包括：在硅衬底（1100）的表面上形成氧化物绝缘层（1200）的硅衬底（1100）; 形成在氧化物绝缘层（1200）上的Ge层（1300），其中在Ge层（1300）和氧化物绝缘层（1200）之间形成第一钝化层（1400）; 形成在Ge层（1300）上的栅极堆叠（1600,1700），形成在栅极叠层（1600,1700）下方的沟道区域，以及形成在沟道区域侧面上的源极（1800）和漏极（1800） ; 以及多个浅沟槽隔离结构（1900），其延伸到硅衬底（1100）中并且填充有绝缘介电材料以在沟道区域中产生应变。此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。

7. 发明申请

WO2012119417A1 STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：应变导电绝缘体结构及其形成方法
公开(公告)号：WO2012119417A1
公开(公告)日：2012-09-13
申请号：PCT/CN2011/078944
申请日：2011-08-25
申请人： TSINGHUA UNIVERSITY , WANG, Jing , XU, Jun , GUO, Lei
发明人： WANG, Jing , XU, Jun , GUO, Lei
IPC分类号： H01L29/06 , H01L29/78 , H01L21/762 , H01L21/336
CPC分类号： H01L21/76283 , H01L21/76251 , H01L29/7843 , H01L29/7846 , H01L29/7848 , H01L29/78684
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate (1100), in which an oxide insulating layer (1200) is formed on a surface of the silicon substrate (1100); a Ge layer (1300) formed on the oxide insulating layer (1200), in which a first passivation layer (1400) is formed between the Ge layer (1300) and the oxide insulating layer (1200); a gate stack (1600, 1700) formed on the Ge layer (1300), a channel region formed below the gate stack (1600, 1700), and a source (1800) and a drain (1800) formed on sides of the channel region; and a Si N stress cap layer (1900) covering the gate stack (1600, 1700) to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译：提供了一种应变绝缘体上的结构，包括：在硅衬底（1100）的表面上形成氧化物绝缘层（1200）的硅衬底（1100）; 形成在氧化物绝缘层（1200）上的Ge层（1300），其中在Ge层（1300）和氧化物绝缘层（1200）之间形成第一钝化层（1400）; 形成在Ge层（1300）上的栅极堆叠（1600,1700），形成在栅极叠层（1600,1700）下方的沟道区域，以及形成在沟道区域侧面上的源极（1800）和漏极（1800） ; 以及覆盖栅极堆叠（1600,1700）的Si N应力覆盖层（1900），以在沟道区域中产生应变。此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。

8. 发明申请

WO2013177855A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：半导体结构及其形成方法
公开(公告)号：WO2013177855A1
公开(公告)日：2013-12-05
申请号：PCT/CN2012/078789
申请日：2012-07-18
申请人： TSINGHUA UNIVERSITY , WANG, Wei , WANG, Jing , GUO, Lei
发明人： WANG, Wei , WANG, Jing , GUO, Lei
IPC分类号： H01L29/04 , H01L21/335
CPC分类号： H01L29/7849 , H01L29/78603 , H01L29/78654 , H01L29/78681 , H01L29/78684
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate (100); a rare earth oxide layer (200) formed on the semiconductor substrate (100); a channel region (300) formed on the rare earth oxide layer (200); and a source region (400) and a drain region (500) formed at both sides of the channel region (300) respectively, in which a relationship between a lattice constant a of the rare earth oxide layer (200) and a lattice constant b of a semiconductor material of the channel region (300) and/or the source region (400) and the drain region (500) is a = (n ± c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
摘要翻译：提供半导体结构及其形成方法。半导体结构包括：半导体衬底（100）; 形成在半导体衬底（100）上的稀土氧化物层（200）; 形成在所述稀土氧化物层（200）上的沟道区（300）。以及分别形成在沟道区（300）的两侧的源区（400）和漏区（500），其中稀土氧化物层（200）的晶格常数a与晶格常数b 沟道区域（300）和/或源极区域（400）和漏极区域（500）的半导体材料是a =（n±c）b，其中n是整数，c是晶格的失配比常数，0

9. 发明申请

WO2013078950A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：半导体结构及其形成方法
公开(公告)号：WO2013078950A1
公开(公告)日：2013-06-06
申请号：PCT/CN2012/084694
申请日：2012-11-15
申请人： LI, Yuan , GUO, Lei
发明人： LI, Yuan , GUO, Lei
IPC分类号： H01L27/00
CPC分类号： H01L33/0062 , H01L33/007 , H01L33/16 , H01L33/20
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a substrate (100); and a plurality of zigzag structures (200) formed on a surface of the substrate (100), in which each zigzag structure (200) has a first long side (202) and a first short side (204), the first long side (202) of one zigzag structure (200) is adjacent to the first short side (204) of another zigzag structure (200) adjacent to the one zigzag structure (200), each first long side (202) defines a first surface (300) of each zigzag structure (200), each first short side (204) defines a second surface (302) of each zigzag structure, and each first surface (300) is a growth surface for a compound semiconductor layer.
摘要翻译：提供半导体结构及其形成方法。半导体结构包括：衬底（100）; 以及形成在所述基板（100）的表面上的多个锯齿形结构（200），其中每个锯齿形结构（200）具有第一长边（202）和第一短边（204），所述第一长边一个之字形结构（200）的第一表面（202）与邻近一个之字形结构（200）的另一个锯齿形结构（200）的第一短边（204）相邻，每个第一长边（202）限定第一表面（300）每个Z字形结构（200）的每个第一短边（204）限定每个锯齿形结构的第二表面（302），并且每个第一表面（300）是化合物半导体层的生长表面。

10. 发明申请

WO2013067967A1 SEMICONDUCTOR ELECTRICITY CONVERTER 审中-公开
标题翻译：半导体电力转换器
公开(公告)号：WO2013067967A1
公开(公告)日：2013-05-16
申请号：PCT/CN2012/084413
申请日：2012-11-09
申请人： GUO, Lei
发明人： GUO, Lei
IPC分类号： H02M5/20 , H02M7/06 , H02N6/00 , H01L31/042 , H01L33/00
CPC分类号： H02M11/00 , H01L31/173
摘要： A semiconductor electricity converter is provided. The semiconductor electricity converter comprises: an AC input module, for converting an input AC electric energy into a light energy, the AC input module comprising a plurality of semiconductor electricity-to-light conversion structures (1), each semiconductor electricity-to-light conversion structure (1) comprising an electricity-to-light conversion layer (102); and an AC output module, for converting the light energy into an output AC electric energy, the AC output module comprising a plurality of semiconductor light-to-electricity conversion structures (2), each semiconductor light-to-electricity conversion structure (2) comprising a light-to-electricity conversion layer (110); in which an emitting spectrum of each semiconductor electricity-to-light conversion structure (1) and an absorption spectrum of each semiconductor light-to-electricity conversion structure (2) are matched with each other.
摘要翻译：提供了一种半导体电力转换器。所述半导体电力转换器包括：AC输入模块，用于将输入的AC电能转换为光能，所述AC输入模块包括多个半导体电 - 光转换结构（1），每个半导体电 - 光转换结构（1），包括电 - 光转换层（102）; 和交流输出模块，用于将光能转换为输出交流电能，所述交流输出模块包括多个半导体光 - 电转换结构（2），每个半导体光 - 电转换结构（2）包括光电转换层（110）; 其中每个半导体电 - 光转换结构（1）的发射光谱和每个半导体光 - 电转换结构（2）的吸收光谱彼此匹配。

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