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    • 2. 发明申请
    • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    • 半导体结构及其形成方法
    • WO2013177856A1
    • 2013-12-05
    • PCT/CN2012/078790
    • 2012-07-18
    • TSINGHUA UNIVERSITYWANG, WeiWANG, JingGUO, Lei
    • WANG, WeiWANG, JingGUO, Lei
    • H01L21/336H01L29/78
    • H01L29/78603H01L29/7849H01L29/78654H01L29/78681H01L29/78684
    • A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate (100); a trench (200) formed in the semiconductor substrate (100), in which a rare earth oxide layer (300) is formed in the trench (200); a channel region (400) partly or entirely formed on the rare earth oxide layer (300); and a source region (500) and a drain region (600) formed at both sides of the channel region (400), respectively. A relationship between a lattice constant a of the rare earth oxide layer (300) and a lattice constant b of a semiconductor material of the channel region (400) and/or the source region (500) and the drain region (600) is a = (n ± c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
    • 提供半导体结构及其形成方法。 半导体结构包括:半导体衬底(100); 形成在半导体衬底(100)中的沟槽(200),其中在沟槽(200)中形成稀土氧化物层(300); 在所述稀土氧化物层(300)上部分或全部形成的沟道区(400)。 以及分别形成在沟道区域(400)的两侧的源极区(500)和漏极区(600)。 稀土氧化物层(300)的晶格常数a与沟道区域(400)和/或源极区域(500)和漏极区域(600)的半导体材料的晶格常数b之间的关系是 =(n±c)b,其中n是整数,c是晶格常数的失配比,0
    • 3. 发明申请
    • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    • 半导体结构及其形成方法
    • WO2013174069A1
    • 2013-11-28
    • PCT/CN2012/078728
    • 2012-07-16
    • TSINGHUA UNIVERSITYWANG, JingGUO, LeiWANG, Wei
    • WANG, JingGUO, LeiWANG, Wei
    • H01L27/092H01L21/8238
    • H01L21/823807H01L21/823814
    • A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate (100); a source region and a drain region defined in the semiconductor substrate (100) respectively, and a trench (200, 300) formed in the source region and/or the drain region, in which a rare earth oxide layer (400) is formed in the trench (200, 300); a source (500) and/or a drain (600) formed on the rare earth oxide layer (400); and a channel region (700) formed between the source (500) and the drain (600). A relationship between a lattice constant a of the rare earth oxide layer (400) and a lattice constant b of a semiconductor material of the source (500) and/or the drain (600) and/or the channel region (700) is a = (n ?c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
    • 提供半导体结构及其形成方法。 半导体结构包括:半导体衬底(100); 分别限定在半导体衬底(100)中的源极区和漏极区以及形成在源区和/或漏区中的在其中形成稀土氧化物层(400)的沟槽(200,300) 沟槽(200,300); 在所述稀土氧化物层(400)上形成的源极(500)和/或漏极(600)。 以及形成在源极(500)和漏极(600)之间的沟道区域(700)。 稀土氧化物层(400)的晶格常数a与源极(500)和/或漏极(600)和/或沟道区域(700)的半导体材料的晶格常数b之间的关系为 =(n≥c)b,其中n是整数,c是晶格常数的失配比,0
    • 6. 发明申请
    • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    • 半导体结构及其形成方法
    • WO2012163047A1
    • 2012-12-06
    • PCT/CN2011/082110
    • 2011-11-11
    • TSINGHUA UNIVERSITYWANG, JingGUO, Lei
    • WANG, JingGUO, Lei
    • H01L29/06H01L27/088H01L21/8234
    • H01L21/764H01L21/823412H01L21/823418H01L21/823481
    • A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a substrate (1100); a plurality of convex structures (1200) formed on the substrate (1100), in which every two adjacent convex structures (1200) are separated by a cavity; a plurality of floated films (1300), in which each floated film (1300) is formed between the every two adjacent convex structures (1200) and connected with tops of the every two adjacent convex structures (1200), the floated films (1300) are partitioned into a plurality of sets, a channel layer is formed on a convex structure (1200) between the floated films (1300) in each set, a source region and a drain region are formed on two sides of the channel layer respectively, and an isolation portion (1200) is set between two adjacent sets of floated films (1300); and a gate stack (1400) formed on each channel layer.
    • 提供半导体结构及其形成方法。 半导体结构包括:衬底(1100); 形成在所述基板(1100)上的多个凸起结构(1200),其中每两个相邻凸起结构(1200)由空腔分隔开; 多个浮动膜(1300),其中每个浮动膜(1300)形成在每两个相邻的凸起结构(1200)之间并与每两个相邻凸起结构(1200)的顶部连接,浮动膜(1300) 被划分为多组,在每组中的浮动膜(1300)之间的凸形结构(1200)上形成沟道层,在沟道层的两侧分别形成源极区和漏极区,以及 隔离部分(1200)设置在两组相邻的漂浮膜(1300)之间; 和形成在每个沟道层上的栅叠层(1400)。
    • 8. 发明申请
    • STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
    • 应变导电绝缘体结构及其形成方法
    • WO2012119418A1
    • 2012-09-13
    • PCT/CN2011/078946
    • 2011-08-25
    • TSINGHUA UNIVERSITYWANG, JingXU, JunGUO, Lei
    • WANG, JingXU, JunGUO, Lei
    • H01L21/336H01L21/20
    • H01L21/76283H01L21/76251H01L29/7843H01L29/7846H01L29/7848H01L29/78684
    • A strained Ge-on-insulator structure is provided, comprising: a silicon substrate (1100), in which an oxide insulating layer (1200) is formed on a surface of the silicon substrate (1100); a Ge layer (1300) formed on the oxide insulating layer (1200), in which a first passivation layer (1400) is formed between the Ge layer (1300) and the oxide insulating layer (1200); a gate stack (1600, 1700) formed on the Ge layer (1300), a channel region formed below the gate stack (1600, 1700), and a source (1800) and a drain (1800) formed on sides of the channel region; and a plurality of shallow trench isolation structures (1900) extending into the silicon substrate (1100) and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
    • 提供了一种应变绝缘体上的结构,包括:在硅衬底(1100)的表面上形成氧化物绝缘层(1200)的硅衬底(1100); 形成在氧化物绝缘层(1200)上的Ge层(1300),其中在Ge层(1300)和氧化物绝缘层(1200)之间形成第一钝化层(1400); 形成在Ge层(1300)上的栅极堆叠(1600,1700),形成在栅极叠层(1600,1700)下方的沟道区域,以及形成在沟道区域侧面上的源极(1800)和漏极(1800) ; 以及多个浅沟槽隔离结构(1900),其延伸到硅衬底(1100)中并且填充有绝缘介电材料以在沟道区域中产生应变。 此外,还提供了用于形成应变的绝缘体上Ge的结构的方法。