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1. 发明申请

WO2011052366A1 VOLTAGE REGULATOR CIRCUIT 审中-公开
标题翻译：电压调节器电路
公开(公告)号：WO2011052366A1
公开(公告)日：2011-05-05
申请号：PCT/JP2010/067809
申请日：2010-10-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , TAKAHASHI, Kei , TSUBUKU, Masashi , NODA, Kosei
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , TAKAHASHI, Kei , TSUBUKU, Masashi , NODA, Kosei
IPC分类号： H02M3/07 , H01L21/822 , H01L27/04 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1255 , H01L29/7869 , H02M3/07 , H02M3/158
摘要： A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/ μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.
摘要翻译：电压调节器电路包括晶体管和电容器。晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道形成层，截止电流小于或等于10AA /μm。电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替施加到第二电极。

2. 发明申请

WO2011052385A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011052385A1
公开(公告)日：2011-05-05
申请号：PCT/JP2010/067998
申请日：2010-10-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , MIYAKE, Hiroyuki , TAKAHASHI, Kei , TOYOTAKA, Kouhei , TSUBUKU, Masashi , NODA, Kosei , KUWABARA, Hideaki
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , MIYAKE, Hiroyuki , TAKAHASHI, Kei , TOYOTAKA, Kouhei , TSUBUKU, Masashi , NODA, Kosei , KUWABARA, Hideaki
IPC分类号： H01L29/786 , H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度纯化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

3. 发明申请

WO2011046048A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011046048A1
公开(公告)日：2011-04-21
申请号：PCT/JP2010/067495
申请日：2010-09-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , MIYAKE, Hiroyuki , TAKAHASHI, Kei , TOYOTAKA, Kouhei , TSUBUKU, Masashi , NODA, Kosei , KUWABARA, Hideaki
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , MIYAKE, Hiroyuki , TAKAHASHI, Kei , TOYOTAKA, Kouhei , TSUBUKU, Masashi , NODA, Kosei , KUWABARA, Hideaki
IPC分类号： H01L29/786 , H01L21/822 , H01L21/8234 , H01L21/8236 , H01L21/8242 , H01L27/04 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体（供体），并且具有比硅半导体更大的能隙。通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

4. 发明申请

WO2011058885A1 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开
标题翻译：显示装置和包括其的电子装置
公开(公告)号：WO2011058885A1
公开(公告)日：2011-05-19
申请号：PCT/JP2010/069226
申请日：2010-10-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TAKAHASHI, Kei , YAMAZAKI, Shunpei
发明人： TAKAHASHI, Kei , YAMAZAKI, Shunpei
IPC分类号： G09F9/30 , G09G3/20 , G09G3/30 , H01L27/32 , H01L29/786 , H01L51/50
CPC分类号： H01L27/1225 , G09G3/3233 , G09G3/3266 , G09G2300/0814 , G09G2300/0842 , G09G2310/0286 , G09G2310/08 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L29/78672 , H01L29/7869
摘要： A display device includes a pixel portion including a plurality of pixels each including a first transistor, a second transistor, and a light-emitting element, in which a gate of the first transistor is electrically connected to a scan line, one of a source and a drain of the first transistor is electrically connected to a signal line, and the other of them is electrically connected to a gate of the second transistor; one of a source and a drain of the second transistor is electrically connected to a power supply line and the other of them is electrically connected to the light-emitting element, and the first transistor includes an oxide semiconductor layer. A period when the display device displays a still image includes a period in which output of a signal to all the scan lines in the pixel portion is stopped.
摘要翻译：显示装置包括像素部分，其包括多个像素，每个像素包括第一晶体管，第二晶体管和发光元件，其中第一晶体管的栅极电连接到扫描线，源和源之一第一晶体管的漏极与信号线电连接，另一端与第二晶体管的栅极电连接; 第二晶体管的源极和漏极之一电连接到电源线，并且另一个电连接到发光元件，并且第一晶体管包括氧化物半导体层。显示装置显示静止图像的周期包括对像素部分中的所有扫描线的信号的输出停止的时段。

5. 发明申请

WO2011043170A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011043170A1
公开(公告)日：2011-04-14
申请号：PCT/JP2010/065990
申请日：2010-09-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , TAKAHASHI, Kei , ITO, Yoshiaki
发明人： YAMAZAKI, Shunpei , TAKAHASHI, Kei , ITO, Yoshiaki
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1251 , H01L29/045 , H01L29/0611 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/66477 , H01L29/66969 , H01L29/78618 , H01L29/78642 , H01L29/78648 , H01L29/78693 , H01L29/78696
摘要： It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.
摘要翻译：本发明的目的是提供一种具有新的生产半导体材料和新结构的半导体器件。半导体器件包括：衬底上的第一导电层，覆盖第一导电层的第一绝缘层，与第一导电层的一部分重叠的第一绝缘层上的氧化物半导体层，并且在表面部分中具有晶体区域形成为与氧化物半导体层接触的第二和第三导电层，覆盖氧化物半导体层和第二和第三导电层的绝缘层，以及绝缘层上的与氧化物半导体层的一部分重叠的第四导电层。

6. 发明申请

WO2011155295A1 DC/DC CONVERTER, POWER SUPPLY CIRCUIT, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译： DC / DC转换器，电源电路和半导体器件
公开(公告)号：WO2011155295A1
公开(公告)日：2011-12-15
申请号：PCT/JP2011/061464
申请日：2011-05-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TAKAHASHI, Kei , KOYAMA, Jun , ISHII, Masato
发明人： TAKAHASHI, Kei , KOYAMA, Jun , ISHII, Masato
IPC分类号： H02M3/155 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/786
CPC分类号： H02M3/156 , H01L27/1225 , H01L27/1251 , H02M3/155 , Y02B70/1483
摘要： Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low.
摘要翻译：提供了具有改善的功率转换效率的DC-DC转换器。结合在DC-DC转换器中并用作用于控制输出功率的开关元件的晶体管在其沟道形成区域中包括与硅相比具有宽带隙和显着小的截止电流的半导体材料。该晶体管还包括除普通栅电极之外的背栅电极和用于根据来自DC-DC转换器的输出功率来控制施加到背栅极的电位的背栅控制电路。通过背栅极控制电路控制施加到背栅电极的电位，能够在输出功率较高时使阈值电压降低导通电阻，并且在输出功率低时增加关断电流。

7. 发明申请

WO2011068025A1 DC CONVERTER CIRCUIT AND POWER SUPPLY CIRCUIT 审中-公开
标题翻译：直流转换电路和电源电路
公开(公告)号：WO2011068025A1
公开(公告)日：2011-06-09
申请号：PCT/JP2010/070248
申请日：2010-11-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TAKAHASHI, Kei , ITO, Yoshiaki , INOUE, Hiroki , NISHIJIMA, Tatsuji
发明人： TAKAHASHI, Kei , ITO, Yoshiaki , INOUE, Hiroki , NISHIJIMA, Tatsuji
IPC分类号： H02M3/155 , H01L29/786
CPC分类号： H02M3/156 , H01L27/12 , H01L27/1225 , H01L29/7869 , H02M3/155
摘要： A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5 x 10 19 atoms/cm 3 as a channel formation layer.
摘要翻译：提供了具有高可靠性的DC转换器电路。 DC转换器电路包括：电感器，被配置为根据流动电流的变化产生电动势; 包括栅极，源极和漏极的晶体管，其被配置为通过导通或关断来控制电感器中的电动势的产生; 当晶体管截止时处于导通状态的整流器; 以及被配置为控制晶体管的导通和截止的控制电路。晶体管包括作为沟道形成层的氢浓度小于或等于5×1019原子/ cm3的氧化物半导体层。

8. 发明申请

WO2010038602A1 SEMICONDUCTOR DEVICE AND RFID TAG USING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和使用半导体器件的RFID标签
公开(公告)号：WO2010038602A1
公开(公告)日：2010-04-08
申请号：PCT/JP2009/065980
申请日：2009-09-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , INOUE, Hiroki , TAKAHASHI, Kei
发明人： INOUE, Hiroki , TAKAHASHI, Kei
IPC分类号： G06K19/07 , G05F1/10 , G05F1/56 , G05F3/24
CPC分类号： G05F3/24 , G06K19/0701 , G06K19/07749
摘要： A semiconductor device monitors a voltage between a reference potential and an input potential and obtains a constant output potential regardless of a value of the voltage, after the voltage exceeds a predetermined threshold voltage in such a manner that the semiconductor device divides a voltage between the reference potential and the input potential using a plurality of first non-linear elements and at least one linear element to constantly generate a first bias voltage regardless of a value of the voltage, divides a voltage between the reference potential and the input potential using a plurality of second non-linear elements with reference to the first bias voltage to constantly generate a second bias voltage regardless of a value of the voltage, and determines the output potential with reference to the second bias voltage.
摘要翻译：半导体器件监视参考电位和输入电位之间的电压，并且在电压超过预定阈值电压之后，获得恒定的输出电位，而不管电压值如何，使得半导体器件将参考电压使用多个第一非线性元件和至少一个线性元件的电位和输入电位以恒定地产生第一偏置电压而不管电压的值，使用多个第一非线性元件和多个线性元件分别在参考电位和输入电位之间分压参考第一偏置电压的第二非线性元件，以恒定地产生第二偏置电压，而不管电压的值，并且参考第二偏置电压确定输出电位。

9. 发明申请

WO2011145707A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开
标题翻译：半导体器件和显示器件
公开(公告)号：WO2011145707A1
公开(公告)日：2011-11-24
申请号：PCT/JP2011/061594
申请日：2011-05-13
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TAKAHASHI, Kei , ITO, Yoshiaki
发明人： TAKAHASHI, Kei , ITO, Yoshiaki
IPC分类号： H02M3/155
CPC分类号： H02M3/158 , H02M3/157 , H02M2001/0048 , Y02B70/1491
摘要： An object is to reduce power consumption of a semiconductor device including a DC-DC converter circuit. The semiconductor device includes a DC-DC converter circuit and a microprocessor. The DC-DC converter circuit includes a conversion circuit including an inductor and a transistor, and a control circuit including a comparison circuit and a logic circuit. In the control circuit, the comparison circuit compares an output of the conversion circuit and a reference value, and the logic circuit performs an arithmetic operation between an output of the comparison circuit and a clock signal of the microprocessor. In the conversion circuit, the transistor controls a current flowing through the inductor in accordance with an output of the logic circuit, and the output of the conversion circuit is generated in accordance with the current flowing through the inductor.
摘要翻译：目的是降低包括DC-DC转换器电路的半导体器件的功耗。半导体器件包括DC-DC转换器电路和微处理器。 DC-DC转换器电路包括具有电感和晶体管的转换电路，以及包括比较电路和逻辑电路的控制电路。在控制电路中，比较电路将转换电路的输出与参考值进行比较，逻辑电路在比较电路的输出与微处理器的时钟信号之间进行运算。在转换电路中，晶体管根据逻辑电路的输出控制流过电感器的电流，并且根据流过电感器的电流产生转换电路的输出。

10. 发明申请

WO2011145706A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开
标题翻译：半导体器件和显示器件
公开(公告)号：WO2011145706A1
公开(公告)日：2011-11-24
申请号：PCT/JP2011/061593
申请日：2011-05-13
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TAKAHASHI, Kei , ITO, Yoshiaki
发明人： TAKAHASHI, Kei , ITO, Yoshiaki
IPC分类号： H02M3/155
CPC分类号： H02M3/156 , H02M2001/0003
摘要： An object is to reduce power consumption of a semiconductor device including a DC-DC converter circuit. The semiconductor device includes a DC-DC converter circuit and a microprocessor. The DC-DC converter circuit includes a conversion circuit including an inductor and a transistor, and a control circuit including a comparison circuit and a logic circuit. A hysteresis comparator is used as the comparison circuit. In the control circuit, the comparison circuit compares an output signal of the conversion circuit with a first reference potential or a second reference potential, and the logic circuit performs arithmetic operation between an output signal of the comparison circuit and a clock signal of the microprocessor. In the conversion circuit, the transistor controls current flowing through the inductor in accordance with an output signal of the logic circuit, and the output signal of the conversion circuit is generated in accordance with the current flowing through the inductor.
摘要翻译：目的是降低包括DC-DC转换器电路的半导体器件的功耗。半导体器件包括DC-DC转换器电路和微处理器。 DC-DC转换器电路包括具有电感和晶体管的转换电路，以及包括比较电路和逻辑电路的控制电路。使用滞后比较器作为比较电路。在控制电路中，比较电路将转换电路的输出信号与第一参考电位或第二参考电位进行比较，逻辑电路在比较电路的输出信号和微处理器的时钟信号之间进行运算。在转换电路中，晶体管根据逻辑电路的输出信号控制流过电感器的电流，并且根据流过电感器的电流产生转换电路的输出信号。

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