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1. 发明申请

WO2010038602A1 SEMICONDUCTOR DEVICE AND RFID TAG USING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和使用半导体器件的RFID标签
公开(公告)号：WO2010038602A1
公开(公告)日：2010-04-08
申请号：PCT/JP2009/065980
申请日：2009-09-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , INOUE, Hiroki , TAKAHASHI, Kei
发明人： INOUE, Hiroki , TAKAHASHI, Kei
IPC分类号： G06K19/07 , G05F1/10 , G05F1/56 , G05F3/24
CPC分类号： G05F3/24 , G06K19/0701 , G06K19/07749
摘要： A semiconductor device monitors a voltage between a reference potential and an input potential and obtains a constant output potential regardless of a value of the voltage, after the voltage exceeds a predetermined threshold voltage in such a manner that the semiconductor device divides a voltage between the reference potential and the input potential using a plurality of first non-linear elements and at least one linear element to constantly generate a first bias voltage regardless of a value of the voltage, divides a voltage between the reference potential and the input potential using a plurality of second non-linear elements with reference to the first bias voltage to constantly generate a second bias voltage regardless of a value of the voltage, and determines the output potential with reference to the second bias voltage.
摘要翻译：半导体器件监视参考电位和输入电位之间的电压，并且在电压超过预定阈值电压之后，获得恒定的输出电位，而不管电压值如何，使得半导体器件将参考电压使用多个第一非线性元件和至少一个线性元件的电位和输入电位以恒定地产生第一偏置电压而不管电压的值，使用多个第一非线性元件和多个线性元件分别在参考电位和输入电位之间分压参考第一偏置电压的第二非线性元件，以恒定地产生第二偏置电压，而不管电压的值，并且参考第二偏置电压确定输出电位。

2. 发明申请

WO2011068025A1 DC CONVERTER CIRCUIT AND POWER SUPPLY CIRCUIT 审中-公开
标题翻译：直流转换电路和电源电路
公开(公告)号：WO2011068025A1
公开(公告)日：2011-06-09
申请号：PCT/JP2010/070248
申请日：2010-11-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , TAKAHASHI, Kei , ITO, Yoshiaki , INOUE, Hiroki , NISHIJIMA, Tatsuji
发明人： TAKAHASHI, Kei , ITO, Yoshiaki , INOUE, Hiroki , NISHIJIMA, Tatsuji
IPC分类号： H02M3/155 , H01L29/786
CPC分类号： H02M3/156 , H01L27/12 , H01L27/1225 , H01L29/7869 , H02M3/155
摘要： A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5 x 10 19 atoms/cm 3 as a channel formation layer.
摘要翻译：提供了具有高可靠性的DC转换器电路。 DC转换器电路包括：电感器，被配置为根据流动电流的变化产生电动势; 包括栅极，源极和漏极的晶体管，其被配置为通过导通或关断来控制电感器中的电动势的产生; 当晶体管截止时处于导通状态的整流器; 以及被配置为控制晶体管的导通和截止的控制电路。晶体管包括作为沟道形成层的氢浓度小于或等于5×1019原子/ cm3的氧化物半导体层。

3. 发明申请

WO2011114868A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011114868A1
公开(公告)日：2011-09-22
申请号：PCT/JP2011/054426
申请日：2011-02-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , INOUE, Hiroki , MATSUZAKI, Takanori , NAGATSUKA, Shuhei
发明人： INOUE, Hiroki , MATSUZAKI, Takanori , NAGATSUKA, Shuhei
IPC分类号： H01L21/8242 , G11C11/405 , H01L27/105 , H01L27/108 , H01L29/786
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L28/60
摘要： A semiconductor device including a nonvolatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that a predetermined amount of charge is held at the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
摘要翻译：提供一种半导体器件，其包括包括具有氧化物半导体的写入晶体管的非易失性存储单元，包括与写入晶体管不同的半导体材料的读取晶体管和电容器。通过接通写入晶体管并且向写入晶体管的源电极（或漏极），电容器的一个电极和读取晶体管的栅电极彼此电连接，然后关闭写入晶体管，使得在节点处保持预定量的电荷。此外，当使用p沟道晶体管作为读取晶体管时，读取电位为正电位。

4. 发明申请

WO2011080998A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011080998A1
公开(公告)日：2011-07-07
申请号：PCT/JP2010/072064
申请日：2010-12-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi , NAGATSUKA, Shuhei , MATSUZAKI, Takanori , INOUE, Hiroki
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi , NAGATSUKA, Shuhei , MATSUZAKI, Takanori , INOUE, Hiroki
IPC分类号： H01L21/8247 , G11C11/402 , G11C11/405 , H01L21/8242 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7869 , G11C16/0425 , H01L27/105 , H01L27/108 , H01L27/10802 , H01L27/10805 , H01L27/11 , H01L27/115 , H01L27/11517 , H01L27/11551 , H01L27/1156 , H01L27/11563 , H01L27/11568 , H01L27/1225 , H01L28/40 , H01L29/78693 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
摘要翻译：半导体器件包括源极线，位线，信号线，字线，在源极线和位线之间并联连接的存储器单元，通过开关电连接到源极线和位线的第一驱动器电路元件，通过开关元件电连接到源极线的第二驱动器电路，电连接到信号线的第三驱动电路，以及电连接到字线的第四驱动电路。存储单元包括第一晶体管，包括第一栅电极，第一源电极和第一漏电极，第二晶体管包括第二栅电极，第二源电极和第二漏极，以及电容器。第二晶体管包括氧化物半导体材料。

5. 发明申请

WO2012017844A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2012017844A1
公开(公告)日：2012-02-09
申请号：PCT/JP2011/066791
申请日：2011-07-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , NAGATSUKA, Shuhei , MATSUZAKI, Takanori , INOUE, Hiroki , KATO, Kiyoshi
发明人： NAGATSUKA, Shuhei , MATSUZAKI, Takanori , INOUE, Hiroki , KATO, Kiyoshi
IPC分类号： G11C11/405 , G11C11/56 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： G11C7/00 , G11C11/403 , G11C11/4087 , H01L27/11517 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.
摘要翻译：目的是提供具有新颖结构的半导体器件，其即使在不提供电力且具有无限数量的写周期的情况下也可以保存存储的数据。使用包括诸如氧化物半导体的宽带隙半导体的存储单元形成半导体器件。半导体器件包括具有输出低于用于从存储单元读取数据的参考电位的电位的功能的电位变化电路。当使用允许充分降低包含在存储单元中的晶体管的截止电流的宽带隙半导体时，可以提供能够长期保存数据的半导体器件。

6. 发明申请

WO2012008286A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2012008286A1
公开(公告)日：2012-01-19
申请号：PCT/JP2011/064599
申请日：2011-06-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KATO, Kiyoshi , MATSUZAKI, Takanori , INOUE, Hiroki , NAGATSUKA, Shuhei
发明人： KATO, Kiyoshi , MATSUZAKI, Takanori , INOUE, Hiroki , NAGATSUKA, Shuhei
IPC分类号： H01L21/8242 , G11C11/405 , H01L21/02 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/1156 , G11C11/404 , G11C16/0441 , H01L27/1207
摘要： A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.
摘要翻译：包括在存储单元阵列中的多个存储单元被分成多个块，每个多行。公共位线通过块中的选择晶体管电连接到分割位线。一个存储单元包括第一晶体管，第二晶体管和电容器。第一晶体管包括第一沟道形成区。第二晶体管包括第二沟道形成区域。第一沟道形成区域包括与第二沟道形成区域的半导体材料不同的半导体材料。

7. 发明申请

WO2011129233A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011129233A1
公开(公告)日：2011-10-20
申请号：PCT/JP2011/058661
申请日：2011-03-30
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , NAGATSUKA, Shuhei , KATO, Kiyoshi , MATSUZAKI, Takanori , INOUE, Hiroki
发明人： NAGATSUKA, Shuhei , KATO, Kiyoshi , MATSUZAKI, Takanori , INOUE, Hiroki
IPC分类号： G11C11/405 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/786
CPC分类号： G11C11/4093 , G11C11/405 , G11C11/4074 , G11C11/4085 , G11C11/4096 , H01L27/1156 , H01L27/1203
摘要： An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor. The memory cell includes a writing transistor, a reading transistor, and a selecting transistor. Using a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and holding data for a long time can be provided.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也能够保存存储的数据。半导体器件包括具有宽栅半导体例如氧化物半导体的存储单元。存储单元包括写入晶体管，读取晶体管和选择晶体管。使用宽栅半导体，可以提供能够充分降低存储单元中包含的晶体管的截止电流并长时间保持数据的半导体器件。

8. 发明申请

WO2011102233A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011102233A1
公开(公告)日：2011-08-25
申请号：PCT/JP2011/052308
申请日：2011-01-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , MATSUZAKI, Takanori , KATO, Kiyoshi , INOUE, Hiroki , NAGATSUKA, Shuhei
发明人： MATSUZAKI, Takanori , KATO, Kiyoshi , INOUE, Hiroki , NAGATSUKA, Shuhei
IPC分类号： G11C11/405 , G11C11/407 , H01L21/8242 , H01L21/8247 , H01L27/10 , H01L27/108 , H01L27/115
CPC分类号： G11C16/0408 , H01L27/11519 , H01L27/11521 , H01L27/1156
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。使用能够充分降低诸如大孔半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。能够充分降低晶体管的截止电流的半导体材料的使用允许长时间保持数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

9. 发明申请

WO2012029637A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：WO2012029637A1
公开(公告)日：2012-03-08
申请号：PCT/JP2011/069239
申请日：2011-08-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , NAGATSUKA, Shuhei , MATSUZAKI, Takanori , INOUE, Hiroki , KATO, Kiyoshi
发明人： NAGATSUKA, Shuhei , MATSUZAKI, Takanori , INOUE, Hiroki , KATO, Kiyoshi
IPC分类号： H01L27/105 , G11C11/402 , G11C11/407 , H01L21/8242 , H01L27/108 , H01L29/786
CPC分类号： G11C11/403 , G11C16/0433 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1156 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.
摘要翻译：半导体器件包括存储单元，其包括第一晶体管，第一晶体管包括第一沟道形成区，第一栅电极以及第一源区和漏区; 第二晶体管，包括设置成与第一源极区域或第一漏极区域中的至少一部分重叠的第二沟道形成区域，第二源极电极，电连接到第一栅极电极的第二漏极电极，以及第二栅电极; 以及设置在第一晶体管和第二晶体管之间的绝缘层。在第二晶体管需要处于截止状态的期间中，至少当向第一源极区域或第一漏极区域提供正电位时，向第二栅电极提供负电位。

10. 发明申请

WO2012008390A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2012008390A1
公开(公告)日：2012-01-19
申请号：PCT/JP2011/065746
申请日：2011-07-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KATO, Kiyoshi , MATSUZAKI, Takanori , NAGATSUKA, Shuhei , INOUE, Hiroki
发明人： KATO, Kiyoshi , MATSUZAKI, Takanori , NAGATSUKA, Shuhei , INOUE, Hiroki
IPC分类号： H01L21/8242 , G11C11/405 , G11C14/00 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11517 , G11C16/0433 , G11C16/26 , H01L27/1156 , H01L29/78
摘要： A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably.
摘要翻译：提供具有新颖结构的半导体器件，其即使在没有供电的情况下也可以保存存储的数据，并且对写入操作的数量没有限制。使用能够显着降低晶体管的截止电流的材料形成半导体器件; 例如，作为宽间隙半导体的氧化物半导体材料。通过使用能够显着降低晶体管的截止电流的半导体材料，半导体器件可以长期保存数据。在具有存储单元阵列的半导体器件中，在串联连接的第一至第m存储器单元的节点中产生的寄生电容基本相等，由此半导体器件可以稳定地工作。

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