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    • 5. 发明申请
    • A PVD METHOD FOR DEPOSITING A COATING ONTO A BODY AND COATED BODIES MADE THEREOF
    • 用于将涂层沉积在其上的涂层的PVD方法及其涂覆体
    • WO2011034492A1
    • 2011-03-24
    • PCT/SE2010/050989
    • 2010-09-15
    • SANDVIK INTELLECTUAL PROPERTY ABÅSTRAND, MariaAHLGREN, MatsBLOMQVIST, Helen
    • ÅSTRAND, MariaAHLGREN, MatsBLOMQVIST, Helen
    • C23C14/34
    • C23C14/345
    • The present invention relates to a method of making a coated body comprising a coating and a substrate where onto said substrate a coating is deposited, using a PVD deposition process. The coating comprises a nitride, carbide, oxide, boride or mixtures thereof, of one or more elements selected from groups IVb, Vb, VIb of the periodic table and Al, Y and Si. The deposition process comprises at least one sequence of varying the substrate bias voltage, while maintaining the active targets, where the sequence of varying the substrate bias voltage comprises a subsequence Si; - depositing at a first substrate bias voltage, B i , for a deposition time, T i , of between 10 seconds and 60 minutes, then, during a ramping time, R i , of between 10 seconds and 40 minutes, while depositing, gradually changing the substrate bias voltage to a second substrate bias voltage B i+1 , where |B i -B i+1 | ≥ 10 V, the subsequence, S i , is repeated until i=n where i=0, 1, 2,...n, where n≥2, and where each new subsequence starts the deposition at the same substrate bias voltage used when ending the previous subsequence.
    • 本发明涉及使用PVD沉积工艺制造涂覆体的方法,该涂覆体包括涂层和基底,其中沉积涂层的所述基底上。 该涂层包含选自元素周期表IVb,Vb,VIb族和Al,Y和Si的一种或多种元素的氮化物,碳化物,氧化物,硼化物或其混合物。 沉积工艺包括改变衬底偏压的至少一个序列,同时保持有源靶,其中改变衬底偏置电压的序列包括子序列Si; 在第一衬底偏置电压Bi下沉积10秒至60分钟之间的沉积时间Ti,然后在斜坡时间Ri之间沉积10秒至40分钟,同时沉积,逐渐改变衬底 偏置电压到第二衬底偏置电压Bi + 1,其中| Bi-Bi + 1 | = 10V,子序列Si重复直到i = n,其中i = 0,1,2,... n,其中n = 2,并且其中每个新子序列开始沉积在与 结束前一个子序列。
    • 8. 发明申请
    • A METHOD FOR PRE-TREATING A SURFACE FOR COATING
    • 一种预处理涂层表面的方法
    • WO2017080774A1
    • 2017-05-18
    • PCT/EP2016/075171
    • 2016-10-20
    • SANDVIK INTELLECTUAL PROPERTY AB
    • CARLSTRÖM, Carl-FredrikAHLGREN, MatsEHIASARIAN, Arutiun, PapkenHOVSEPIAN, Papken, Ehiasar
    • C23C14/02
    • C23C14/022
    • A method for pre-treating a substrate (200) for surface coating by subjecting the substrate to metal ions and noble gas ions selected from the group of argon-ions, krypton-ions, neon-ions, xenon-ions and helium-ions in a vacuum chamber (10) and applying a negative electrical potential (P1, P2) on the substrate (1), wherein the substrate (200) is pre-treated in at least two steps (1000, 2000), wherein the steps are performed subsequently in the vacuum chamber (10), wherein the first step (1000) comprises providing a plasma comprising predominantly noble gas ions selected from the group of argon-ions, krypton-ions, neon-ions, xenon-ions and helium-ions in the vacuum chamber (10), and applying a first negative electrical potential (P1) on the substrate (200) and wherein the second step (2000) comprises providing a plasma comprising predominantly metal ions in the vacuum chamber (10), and applying a second negative electrical potential (P2) on the substrate (200), wherein the first electrical potential (P1) is lower than the second electrical potential (P2), and wherein the magnitude of the first negative potential (P1) is 100 - 1500 V.
    • 一种用于通过使衬底经受选自氩离子,氪离子,氖离子等的金属离子和惰性气体离子来预处理用于表面涂覆的衬底(200)的方法。 (10)中的氙离子和氦离子以及在所述衬底(1)上施加负电位(P1,P2),其中所述衬底(200)在至少两个步骤(1000, 其中所述步骤随后在所述真空室(10)中执行,其中所述第一步骤(1000)包括提供等离子体,所述等离子体主要包括选自氩离子,氪离子,氖离子, (10)中的氙离子和氦离子,并且在所述衬底(200)上施加第一负电位(P1),并且其中所述第二步骤(2000)包括在所述真空中提供主要包含金属离子的等离子体 (10),并且在所述衬底(200)上施加第二负电位(P2),其中, 第一电位(P1)低于第二电位(P2),并且其中第一负电位(P1)的大小为100-1500V。