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1. 发明申请

WO2007116780A1 REFERENCE VOLTAGE GENERATING CIRCUIT AND POWER SUPPLY DEVICE USING THE SAME 审中-公开
标题翻译：参考电压发生电路和使用该电路的电源装置
公开(公告)号：WO2007116780A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/056534
申请日：2007-03-20
申请人： RICOH COMPANY, LTD. , YOSHIDA, Masaaki , NAKANISHI, Hiroaki
发明人： YOSHIDA, Masaaki , NAKANISHI, Hiroaki
IPC分类号： G05F3/24 , G05F1/56 , H01L21/822 , H01L21/8234 , H01L21/8236 , H01L27/04 , H01L27/088
CPC分类号： H01L27/0883
摘要： A disclosed reference voltage generating circuit for generating a reference voltage includes MOSFETs connected in series or in parallel. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.
摘要翻译：公开的用于产生参考电压的参考电压产生电路包括串联或并联连接的MOSFET。 MOSFET中的至少一个包括通过紫外线照射使空穴富集或放电的控制栅极和浮置栅极，并且参考电压产生电路被配置为输出一对MOSFET的阈值电压之间的差作为参考电压。

2. 发明申请

WO2003028113A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2003028113A1
公开(公告)日：2003-04-03
申请号：PCT/JP2002/009585
申请日：2002-09-18
申请人： RICOH COMPANY, LTD. , IWAI, Moriya , YOSHIDA, Masaaki , NAKANISHI, Hiroaki
发明人： IWAI, Moriya , YOSHIDA, Masaaki , NAKANISHI, Hiroaki
IPC分类号： H01L29/792
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11521 , H01L27/11534 , H01L27/11558 , H01L29/42324 , H01L29/7883
摘要： ABSTRACT OF THE DISCLOSURE A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.
摘要翻译：发明内容一种半导体器件能够将正电压和负电压施加到其控制栅极，并且对其存储器的写入需要低电压。在场氧化膜的存储单元区域上形成控制栅极，在其表面上形成层间氧化硅膜。在N型扩散层之间的P基板上形成用于非易失性存储器的栅极氧化膜。浮动栅极形成在层间氧化硅膜，场氧化膜和用于非易失性存储器的栅极氧化物膜上。由于控制栅极和浮置栅极之间的大的耦合比可用于场氧化物膜，所以存储器重写仅需要低电压。此外，由于控制栅极由多晶硅膜形成，所以可以向控制栅极施加正电压和负电压。

3. 发明申请

WO2011158107A1 VEHICLE PARKING ASSIST SYSTEM AND ELECTRIC VEHICLE EQUIPPED WITH THE SAME 审中-公开
标题翻译：车辆停车辅助系统及配备电动车辆
公开(公告)号：WO2011158107A1
公开(公告)日：2011-12-22
申请号：PCT/IB2011/001381
申请日：2011-06-16
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , AISIN SEIKI KABUSHIKI KAISHA , ICHIKAWA, Shinji , UENO, Yukiko , TACHIBANA, Hiroyuki , NAKANISHI, Hiroaki
发明人： ICHIKAWA, Shinji , UENO, Yukiko , TACHIBANA, Hiroyuki , NAKANISHI, Hiroaki
IPC分类号： B60L11/18 , B62D15/02 , B60W20/00
CPC分类号： B60R21/00 , B60L9/00 , B60L11/005 , B60L11/123 , B60L11/14 , B60L11/182 , B60L11/1831 , B60L11/1835 , B60L2210/14 , B60L2210/30 , B60L2210/40 , B60L2220/14 , B60L2250/16 , B62D6/00 , B62D15/0285 , G08G1/14 , Y02T10/6217 , Y02T10/7005 , Y02T10/7022 , Y02T10/7072 , Y02T10/7077 , Y02T10/7225 , Y02T10/7241 , Y02T90/12 , Y02T90/121 , Y02T90/122 , Y02T90/125 , Y02T90/127 , Y02T90/14
摘要： A controller of a vehicle (100) recognizes a parking frame of power feeding equipment (200) on the basis of an image captured by a camera (120) when the distance between the power feeding equipment (200) and the vehicle (100) is longer than L1, recognizes a power transmitting unit (220)on the basis of an image of a side surface of the power transmitting unit (220) when the distance is shorter than or equal to L1, and, furthermore, recognizes the power transmitting unit (220) on the basis of an image of an upper surface of the power transmitting unit (220) when the distance is shorter than or equal to L2 (
摘要翻译：当供电设备（200）和车辆（100）之间的距离为（20））时，车辆的控制器（100）基于由照相机（120）拍摄的图像识别供电设备（200）的停车框架长于L1，当距离小于或等于L1时，基于电力发送单元（220）的侧表面的图像识别电力发送单元（220），并且还识别电力发送单元（220），当所述距离小于或等于L2（

4. 发明申请

WO1996005655A1 IMPROVEMENTS IN A VLSI MEMORY CIRCUIT 审中-公开
标题翻译： VLSI存储器电路中的改进
公开(公告)号：WO1996005655A1
公开(公告)日：1996-02-22
申请号：PCT/US1995010397
申请日：1995-08-14
申请人： CREATIVE INTEGRATED SYSTEMS, INC. , RICOH COMPANY, LTD.
发明人： CREATIVE INTEGRATED SYSTEMS, INC. , RICOH COMPANY, LTD. , KOMAREK, James, A. , PADGETT, Clarence, W. , MINNEY, Jack, L. , TANNER, Scott, B. , KOJIMA, Shin-ichi , OISHI, Motohiro , FUKUMURA, Keiji , NAKANISHI, Hiroaki
IPC分类号： H03K17/16
CPC分类号： G11C7/1057 , G11C7/1051 , G11C7/106 , G11C7/12 , G11C7/22 , G11C8/06 , G11C8/18
摘要： The rate of increase or decrease of the rising and falling edge respectively of an output driver in a read-only memory circuit is provided by driving a CMOS output amplifier by gate control signals whose rate of increase or decrease in turn is controlled by a control signal, SLOW. The signal SLOW is generated based upon the speed of operation of the ROM and is binary, one state being indicative of normal speed of operation and a second state being indicative of a slow speed of operation of the ROM. When the signal SLOW is high, the rate at which complementary gate drive signals are applied to the CMOS amplifier are generated at a first or normal rate. However, when the signal SLOW is low, the rate of generation of these gate drive signals is also decreased to correspondingly decrease the switching speed of the CMOS amplifier. A voltage precharge signal VPC is also applied to the rate controlling circuit so that variations in the precharge voltage indicative of manufacturing parameters, voltage variations and temperature variations directly effect the rate at which the gate drive signals are generated and hence the switching speeds of the CMOS amplifier.
摘要翻译：只读存储器电路中的输出驱动器的上升沿和下降沿的增加或减小的速率通过由控制信号控制的栅极控制信号驱动CMOS输出放大器来提供，，慢。基于ROM的操作速度产生信号SLOW，是二进制的，一个状态表示正常的操作速度，第二个状态指示ROM的低速操作。当信号SLOW为高时，互补栅极驱动信号施加到CMOS放大器的速率以第一或正常速率产生。然而，当信号SLOW为低电平时，这些栅极驱动信号的产生速率也降低，以相应地降低CMOS放大器的开关速度。电压预充电信号VPC也被施加到速率控制电路，使得指示制造参数，电压变化和温度变化的预充电电压的变化直接影响产生栅极驱动信号的速率，因此CMOS的开关速度放大器。

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