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1. 发明申请

WO2003028113A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2003028113A1
公开(公告)日：2003-04-03
申请号：PCT/JP2002/009585
申请日：2002-09-18
申请人： RICOH COMPANY, LTD. , IWAI, Moriya , YOSHIDA, Masaaki , NAKANISHI, Hiroaki
发明人： IWAI, Moriya , YOSHIDA, Masaaki , NAKANISHI, Hiroaki
IPC分类号： H01L29/792
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11521 , H01L27/11534 , H01L27/11558 , H01L29/42324 , H01L29/7883
摘要： ABSTRACT OF THE DISCLOSURE A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.
摘要翻译：发明内容一种半导体器件能够将正电压和负电压施加到其控制栅极，并且对其存储器的写入需要低电压。在场氧化膜的存储单元区域上形成控制栅极，在其表面上形成层间氧化硅膜。在N型扩散层之间的P基板上形成用于非易失性存储器的栅极氧化膜。浮动栅极形成在层间氧化硅膜，场氧化膜和用于非易失性存储器的栅极氧化物膜上。由于控制栅极和浮置栅极之间的大的耦合比可用于场氧化物膜，所以存储器重写仅需要低电压。此外，由于控制栅极由多晶硅膜形成，所以可以向控制栅极施加正电压和负电压。

2. 发明申请

WO2007116780A1 REFERENCE VOLTAGE GENERATING CIRCUIT AND POWER SUPPLY DEVICE USING THE SAME 审中-公开
标题翻译：参考电压发生电路和使用该电路的电源装置
公开(公告)号：WO2007116780A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/056534
申请日：2007-03-20
申请人： RICOH COMPANY, LTD. , YOSHIDA, Masaaki , NAKANISHI, Hiroaki
发明人： YOSHIDA, Masaaki , NAKANISHI, Hiroaki
IPC分类号： G05F3/24 , G05F1/56 , H01L21/822 , H01L21/8234 , H01L21/8236 , H01L27/04 , H01L27/088
CPC分类号： H01L27/0883
摘要： A disclosed reference voltage generating circuit for generating a reference voltage includes MOSFETs connected in series or in parallel. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.
摘要翻译：公开的用于产生参考电压的参考电压产生电路包括串联或并联连接的MOSFET。 MOSFET中的至少一个包括通过紫外线照射使空穴富集或放电的控制栅极和浮置栅极，并且参考电压产生电路被配置为输出一对MOSFET的阈值电压之间的差作为参考电压。

3. 发明申请

WO2007061124A1 SEMICONDUCTOR WAFER INCLUDING SEMICONDUCTOR CHIPS DIVIDED BY SCRIBE LINE AND PROCESS-MONITOR ELECTRODE PADS FORMED ON SCRIBE LINE 审中-公开
标题翻译：半导体晶体管包括由筛选线分割的半导体晶体管和在SCRIBE线上形成的过程监测电极板
公开(公告)号：WO2007061124A1
公开(公告)日：2007-05-31
申请号：PCT/JP2006/323872
申请日：2006-11-22
申请人： RICOH COMPANY, LTD. , YOSHIDA, Masaaki , KOUNO, Satoshi
发明人： YOSHIDA, Masaaki , KOUNO, Satoshi
IPC分类号： H01L21/66 , B22D17/20 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04
CPC分类号： H01L22/34 , H01L22/32 , H01L27/0207 , H01L2224/02166 , H01L2224/05554
摘要： The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.
摘要翻译：本发明公开了一种半导体晶片，其具有将半导体晶片分割为多个半导体芯片的矩阵的划线。半导体晶片包括多晶硅层，形成在多晶硅层上的多金属层间绝缘膜和形成在多金属层间绝缘膜上的第一金属布线层。半导体晶片包括形成在划线的切割区域上的处理监测电极焊盘。处理监视器电极焊盘的宽度大于切割区域的宽度。处理监视电极焊盘包括形成在多金属绝缘膜中的接触孔，用于将第一金属布线层连接到多晶硅层。

4. 发明申请

WO2016203763A1 STORAGE APPARATUS, CONTROL APPARATUS, AND MOVING BODY 审中-公开
标题翻译：存储设备，控制装置和移动体
公开(公告)号：WO2016203763A1
公开(公告)日：2016-12-22
申请号：PCT/JP2016/002884
申请日：2016-06-15
申请人： RICOH COMPANY, LTD. , YOSHIDA, Masaaki , YANAGITA, Hideo
发明人： YOSHIDA, Masaaki , YANAGITA, Hideo
IPC分类号： H01M10/48 , B60L3/00 , B60L11/14 , B60W10/26 , B60W20/00 , H01M10/44 , H02J7/00
CPC分类号： B60L11/1864 , B60L3/0046 , B60L11/14 , B60L11/1857 , B60L11/1859 , B60L11/1861 , B60L11/1862 , B60L2250/16 , B60W10/26 , B60W20/00 , H01M4/5805 , H01M10/052 , H01M10/0525 , H01M10/44 , H01M10/46 , H01M10/48 , H01M2004/028 , H01M2220/20 , H02J7/14 , H02J7/1446 , H02J2007/005 , Y02E60/122 , Y02T10/70 , Y02T10/7005 , Y02T10/7044 , Y02T10/705 , Y02T10/7077 , Y02T10/92 , Y10S903/907
摘要： A storage apparatus stores output property data including groups of residual capacities of a secondary battery and output densities corresponding to the residual capacities. In the output property data, both a difference between a residual capacity of a group that includes an extreme value in the output densities and a residual capacity of a group that includes an output density that immediately precedes the extreme value, and a difference between the residual capacity of the group that includes the extreme value in the output densities and a residual capacity of a group that includes an output density that immediately follows the extreme value are less than a difference between output densities of other groups adjacent to each other.
摘要翻译：存储装置存储包括二次电池的剩余容量组的输出特性数据和与剩余容量对应的输出密度。在输出属性数据中，包括输出密度中的极值的组的剩余容量与包括紧接在极值之前的输出密度的组的剩余容量之间的差以及残差之间的差包括输出密度中的极值的组的容量和包括紧接在极值之后的输出密度的组的剩余容量小于彼此相邻的其他组的输出密度之间的差。

5. 发明申请

WO2014104413A1 BATTERY CHARGER, BATTERY CHARGING SYSTEM, AND BATTERY CHARGING METHOD 审中-公开
标题翻译：电池充电器，电池充电系统和电池充电方法
公开(公告)号：WO2014104413A1
公开(公告)日：2014-07-03
申请号：PCT/JP2013/085356
申请日：2013-12-27
申请人： RICOH COMPANY, LTD. , TAKAI, Masami , YOSHIDA, Masaaki
发明人： TAKAI, Masami , YOSHIDA, Masaaki
IPC分类号： H02J7/02 , H01M10/44 , H01M10/48
CPC分类号： H02J7/007 , H01M10/44 , H01M10/48 , H01M2220/20 , H02J7/0021 , H02J7/0027 , H02J2007/0096 , Y02T10/7055
摘要： A battery charger for charging a battery includes a charger; an acquisition unit acquiring information of the battery; and a control unit setting a charging condition of the battery based on the information of the battery and controlling the charger.
摘要翻译：用于对电池充电的电池充电器包括充电器; 获取单元获取电池的信息; 以及控制单元，基于电池的信息设定电池的充电状态并控制充电器。

6. 发明申请

WO2006068265A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2006068265A1
公开(公告)日：2006-06-29
申请号：PCT/JP2005/023699
申请日：2005-12-19
申请人： RICOH COMPANY, LTD. , YOSHIDA, Masaaki
发明人： YOSHIDA, Masaaki
IPC分类号： H01L27/088 , H01L27/115 , H01L29/788
CPC分类号： G11C16/30 , G11C16/0433 , H01L21/823462 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor includes a memory gate oxide film that is arranged on a semiconductor substrate, and a floating gate made of polysilicon that is arranged on the memory gate oxide film. The selection transistor is serially connected to the memory transistor and includes a selection gate oxide film that is arranged on the semiconductor substrate, and a selection gate made of polysilicon that is arranged on the selection gate oxide film. The peripheral circuit transistor includes a peripheral circuit gate oxide film that is arranged on the semiconductor substrate, and a peripheral circuit gate made of polysilicon that is arranged on the peripheral circuit gate oxide film. The memory gate oxide film is arranged to be thinner than the peripheral circuit gate oxide film.
摘要翻译：公开了一种半导体器件，其包括具有存储晶体管和选择晶体管的非易失性存储单元和外围电路晶体管。存储晶体管包括布置在半导体衬底上的存储栅极氧化膜和布置在存储栅极氧化膜上的由多晶硅制成的浮置栅极。选择晶体管串联连接到存储晶体管，并且包括布置在半导体衬底上的选择栅极氧化膜以及布置在选择栅氧化膜上的由多晶硅制成的选择栅极。外围电路晶体管包括布置在半导体衬底上的外围电路栅极氧化膜，以及设置在外围电路栅氧化膜上的由多晶硅制成的外围电路栅极。存储栅氧化膜被布置成比外围电路栅极氧化膜薄。

7. 发明申请

WO2004050725A1 POLYMER COMPOUND, RESIST COMPOSITION AND DISSOLUTION INHIBITOR AGENT CONTAINING THE POLYMER COMPOUND 审中-公开
标题翻译：聚合物化合物，耐酸性组合物和溶解抑制剂包含聚合物化合物
公开(公告)号：WO2004050725A1
公开(公告)日：2004-06-17
申请号：PCT/JP2003/015247
申请日：2003-11-28
申请人： TOKYO OHKA KOGYO CO., LTD. , OGATA, Toshiyuki , ENDO, Kotaro , TSUJI, Hiromitsu , YOSHIDA, Masaaki , HADA, Hideo , TAKASU, Ryoichi , SATO, Mitsuru
发明人： OGATA, Toshiyuki , ENDO, Kotaro , TSUJI, Hiromitsu , YOSHIDA, Masaaki , HADA, Hideo , TAKASU, Ryoichi , SATO, Mitsuru
IPC分类号： C08F20/22
CPC分类号： G03F7/0046 , C08F20/22 , G03F7/0397 , Y10S430/108
摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 mm-1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.
摘要翻译：提供一种用于下一代微细加工的光致抗蚀剂组合物的高透明度的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。为了确保耐蚀刻性，将脂环族基团引入侧链部分。脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0mm -1的吸附系数表示的157纳米波长的透明度。作为脂环基，优选使用多环基。通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

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