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1. 发明申请

WO2006088609A2 SEMICONDUCTOR PACKAGE WITH LOW AND HIGH-SPEED SIGNAL PATHS 审中-公开
标题翻译：具有低速和高速信号线的半导体封装
公开(公告)号：WO2006088609A2
公开(公告)日：2006-08-24
申请号：PCT/US2006002131
申请日：2006-01-19
申请人： RAMBUS INC , LI MING , KHALILI SAYEH , MULLEN DONALD R
发明人： LI MING , KHALILI SAYEH , MULLEN DONALD R
IPC分类号： H01L23/498
CPC分类号： H01L23/4985 , H01L23/49833 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2223/6688 , H01L2224/04042 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L2924/00014 , H01L2924/01079 , H01L2924/07811 , H01L2924/14 , H01L2924/15311 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： The semiconductor package includes two electrical contacts and a semiconductor device coupled to opposing sides of a substrate. The substrate defines at least one via extending at least partially there through. The semiconductor device includes a semiconductor low-speed interface electrically coupled to one of the electrical contacts through the via, and a semiconductor high-speed interface electrically coupled to flexible tape. The flexible tape is also electrically coupled to the other one of the electrical contacts.
摘要翻译：半导体封装包括两个电触点和耦合到衬底的相对侧的半导体器件。衬底限定至少一个至少部分地延伸通过的通孔。半导体器件包括半导体低速接口，电连接到通过通孔的电触点之一，以及电耦合到柔性带的半导体高速接口。柔性带还电耦合到另一个电触点。

2. 发明申请

WO2009032928A8 METHOD AND APPARATUS TO REPAIR DEFECTS IN NONVOLATILE SEMICONDUCTOR MEMORY DEVICES 审中-公开
标题翻译：在非易失性半导体存储器件中修复缺陷的方法和装置
公开(公告)号：WO2009032928A8
公开(公告)日：2010-04-15
申请号：PCT/US2008075261
申请日：2008-09-04
申请人： RAMBUS INC , BRONNER GARY B , LI MING , MULLEN DONALD R , WARE FREDERICK , DONNELLY KEVIN S
发明人： BRONNER GARY B , LI MING , MULLEN DONALD R , WARE FREDERICK , DONNELLY KEVIN S
IPC分类号： G11C16/34
CPC分类号： G11C16/349 , G11C16/3418 , H01L23/3128 , H01L23/345 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/19107 , H01L2924/00012 , H01L2924/00
摘要： A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed.
摘要翻译：一种修复非易失性半导体存储器件以消除缺陷的方法包括监测包含在半导体封装中的非易失性半导体存储器件的存储器耐久性指示器。确定记忆耐力指示符是否超过预定义的限制。最后，响应于确定存储器耐力指示符超出预定义的限制，器件被退火。

3. 发明申请

WO2009032928A2 METHOD AND APPARATUS TO REPAIR DEFECTS IN NONVOLATILE SEMICONDUCTOR MEMORY DEVICES 审中-公开
标题翻译：修复非易失性半导体存储器件缺陷的方法和装置
公开(公告)号：WO2009032928A2
公开(公告)日：2009-03-12
申请号：PCT/US2008075261
申请日：2008-09-04
申请人： RAMBUS INC , BRONNER GARY B , LI MING , MULLEN DONALD R , WARE FREDERICK , DONNELLY KEVIN S
发明人： BRONNER GARY B , LI MING , MULLEN DONALD R , WARE FREDERICK , DONNELLY KEVIN S
IPC分类号： G11C16/34
CPC分类号： G11C16/349 , G11C16/3418 , H01L23/3128 , H01L23/345 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/06589 , H01L2924/15311 , H01L2924/19107 , H01L2924/00012 , H01L2924/00
摘要： A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed.
摘要翻译：一种修复非易失性半导体存储器件以消除缺陷的方法包括监测包含在半导体封装中的非易失性半导体存储器件的存储器耐久指示器。确定内存耐久性指标是否超过预定义的限制。最后，响应于确定存储器耐久性指标超过预定限制，对设备进行退火。

4. 发明申请

WO2006107365A2 HEAT SINK FOR MULTIPLE SEMICONDUCTOR MODULES 审中-公开
标题翻译：用于多个半导体模块的散热器
公开(公告)号：WO2006107365A2
公开(公告)日：2006-10-12
申请号：PCT/US2006001591
申请日：2006-01-13
申请人： RAMBUS INC , LI MING
发明人： LI MING
IPC分类号： H05K7/20 , H01L23/40
CPC分类号： H01L23/3675 , G11C5/143 , H01L23/36 , H01L25/105 , H01L2224/16 , H01L2225/1005 , H01L2225/107 , H01L2225/1094 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2224/0401
摘要： A system for dissipating heat away from multiple semiconductor modules includes a thermal conductor having a thermally conductive base and multiple thermally conductive semiconductor module connectors thermally coupled to the base. Each of the semiconductor module connectors is configured to connect to a different semiconductor module of multiple semiconductor modules.
摘要翻译：用于从多个半导体模块中散热的系统包括具有导热基座和热耦合到基座的多个导热半导体模块连接器的热导体。每个半导体模块连接器被配置为连接到多个半导体模块的不同半导体模块。

5. 发明申请

WO2011017202A3 PACKAGED SEMICONDUCTOR DEVICE FOR HIGH PERFORMANCE MEMORY AND LOGIC 审中-公开
标题翻译：用于高性能存储器和逻辑的包装半导体器件
公开(公告)号：WO2011017202A3
公开(公告)日：2011-05-05
申请号：PCT/US2010043788
申请日：2010-07-29
申请人： RAMBUS INC , LI MING
发明人： LI MING
IPC分类号： H01L23/48 , H01L23/12 , H01L23/52
CPC分类号： H01L23/49827 , H01L23/13 , H01L23/36 , H01L23/49822 , H01L24/48 , H01L24/73 , H01L25/18 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/06517 , H01L2225/06565 , H01L2225/06572 , H01L2225/06589 , H01L2924/00014 , H01L2924/14 , H01L2924/1433 , H01L2924/15153 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/181 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A packaged semiconductor device is disclosed. The device comprises a substrate having multiple layers between first and second oppositely disposed faces, and a cavity with an opening at the first face to nest at least one integrated circuit memory device. Logic circuitry is disposed on the second face and includes contacts for electrically coupling to the stacked integrated circuit memory devices. The logic circuitry is coupled to electrical contacts formed on the first face through first electrical paths formed in the multiple layers of the substrate, the first electrical paths including conductive traces and vias.
摘要翻译：公开了一种封装的半导体器件。该装置包括在第一和第二相对设置面之间具有多个层的衬底，以及在第一面具有开口以便嵌套至少一个集成电路存储器件的空腔。逻辑电路设置在第二面上并且包括用于电耦合到堆叠的集成电路存储器设备的触点。逻辑电路通过形成在衬底的多个层中的第一电通路耦合到形成在第一面上的电触点，第一电通路包括导电迹线和通孔。

6. 发明申请

WO2008076790A3 MULTI-DIE MEMORY DEVICE 审中-公开
标题翻译：多重记忆体装置
公开(公告)号：WO2008076790A3
公开(公告)日：2008-09-04
申请号：PCT/US2007087359
申请日：2007-12-13
申请人： RAMBUS INC , BEST SCOTT , LI MING
发明人： BEST SCOTT , LI MING
IPC分类号： G11C5/02
CPC分类号： G11C11/4093 , G11C5/02 , G11C5/025 , G11C5/04 , G11C11/4096 , H01L23/481 , H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/0652 , H01L2225/06541 , H01L2225/06558 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01019 , H01L2924/01055 , H01L2924/14 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/0401
摘要： An integrated circuit (IC) package includes an interface die and a separate storage die. The interface die has a synchronous interface to receive memory access commands from an external memory controller, and has a plurality of clockless memory control interfaces to output row and column control signals that correspond to the memory access commands. The storage die has a plurality of independently accessible storage arrays and corresponding access-control interfaces to receive the row and column control signals from the clockless memory control interfaces, each of the access-control interfaces including data output circuitry to output read data corresponding to a given one of the memory access commands in a time-multiplexed transmission.
摘要翻译：集成电路（IC）封装包括接口管芯和单独的存储管芯。接口管芯具有用于从外部存储器控制器接收存储器访问命令的同步接口，并且具有多个无时钟存储器控制接口以输出对应于存储器访问命令的行和列控制信号。存储管芯具有多个可独立访问的存储阵列和对应的访问控制接口以接收来自无时钟存储器控制接口的行和列控制信号，每个访问控制接口包括数据输出电路以输出对应于给出时分复用传输中的一个存储器访问命令。

7. 发明申请

WO2007050465A3 IMPROVED METHODS FOR BEAMING 审中-公开
标题翻译：改进的光束方法
公开(公告)号：WO2007050465A3
公开(公告)日：2007-10-25
申请号：PCT/US2006041115
申请日：2006-10-20
申请人： UNIV JOHNS HOPKINS , VOGELSTEIN BERT , DIEHL FRANK , KINZLER KENNETH W , LI MING
发明人： VOGELSTEIN BERT , DIEHL FRANK , KINZLER KENNETH W , LI MING
IPC分类号： C12P19/34
CPC分类号： C12Q1/6858 , G01R31/025 , G01R31/3277 , C12Q2565/537 , C12Q2563/155 , C12Q2527/125
摘要： Improvements on the basic method used for BEAMing increase sensitivity and increase the signal-to-noise ratio. The improvements have permitted the determination of intrinsic error rates of various DNA polymerases and have permitted the detection of rare and subtle mutations in DNA isolated from plasma of cancer patients.
摘要翻译：用于BEAMing的基本方法的改进提高了灵敏度并提高了信噪比。这些改进允许确定各种DNA聚合酶的固有错误率，并允许检测从癌症患者血浆中分离的DNA中罕见且微妙的突变。

8. 发明申请

WO2007049088A8 Method of stimulating growth of functional blood vessels and/or regeneration of myocardium in damaged tissues 审中-公开
标题翻译：刺激功能性血管生长和/或受损组织中心肌再生的方法
公开(公告)号：WO2007049088A8
公开(公告)日：2007-09-27
申请号：PCT/IB2005003191
申请日：2005-10-27
申请人： LEAD BILLION LTD , LI MING , CHENG LEI , YAO XIN-SHENG , LIU HONG-WEI , SANDERSON JOHN ELSBY , GU XUE-MEI , CHEUNG LEONARD WING-HONG
发明人： LI MING , CHENG LEI , YAO XIN-SHENG , LIU HONG-WEI , SANDERSON JOHN ELSBY , GU XUE-MEI , CHEUNG LEONARD WING-HONG
IPC分类号： A61K31/7048 , A61K36/73 , A61P9/00 , A61P19/08 , A61P21/00
CPC分类号： A61K31/704 , A61K31/7024 , A61K2300/00
摘要： Use of Gemin A from an extract of Geum Japonicum for the manufacture of a medicament for stimulating growth of functional blood vessels and/or regeneration of myocardium in damaged tissues.
摘要翻译：从天麻提取物中使用Gemin A制造用于刺激功能性血管生长和/或损伤组织中心肌再生的药物。

9. 发明申请

WO2007048353B1 PHARMACEUTICAL COMPOSITION AND METHOD FOR NEOANGIOGENESIS/REVASCULARIZATION USEFUL IN TREATING ISCHEMIC HEART DISEASES 审中-公开
标题翻译：用于治疗缺血性心脏病的药物组合物和用于新血管发生/再生血管化的方法
公开(公告)号：WO2007048353B1
公开(公告)日：2007-06-07
申请号：PCT/CN2006002886
申请日：2006-10-27
申请人： LEAD BILLION LTD , LI MING , CHENG LEI , LIU HONGWEI
发明人： LI MING , CHENG LEI , LIU HONGWEI
IPC分类号： A61K31/7034 , A61P9/00 , A61P9/10
CPC分类号： A61K31/704 , A61K31/192 , A61K31/56 , A61K35/34 , C07C62/32
摘要： A pharmaceutical composition and a method of treating ischemic heart diseases by growing new blood vessels that supply oxygen and nutrients to infarcted heart tissues throughout the entire infarct zone and for preventing cardiomyocyte apoptosis in ischemic events. The pharmaceutical composition contains an active ingredient compound with a backbone structure of formula (I).
摘要翻译：一种药物组合物和一种治疗局部缺血性心脏病的方法，该方法通过培养在整个梗塞区域向梗塞心脏组织提供氧气和营养物质的新血管并用于预防缺血事件中的心肌细胞凋亡。该药物组合物含有具有式（I）骨架结构的活性成分化合物。

10. 发明申请

WO2006083906A2 IMPROVED FORMULATIONS OF ANTI-ANGIOGENIC PEPTIDES 审中-公开
标题翻译：改善抗生血管肽的制剂
公开(公告)号：WO2006083906A2
公开(公告)日：2006-08-10
申请号：PCT/US2006003461
申请日：2006-02-01
申请人： ATTENUON LLC , MAZAR ANDREW P , HEIATI HASHEM , SCHRIER JAY , LI MING , HARRIS SCOTT
发明人： MAZAR ANDREW P , HEIATI HASHEM , SCHRIER JAY , LI MING , HARRIS SCOTT
IPC分类号： A61K38/04
CPC分类号： A61K9/0019 , A61K9/19 , A61K38/04 , A61K47/12 , A61K47/183
摘要： Described herein are compositions/formulations of the Cys-containing anti-angiogenic peptide Pro-His-Ser-Cys-Asn (preferably in its capped form as Ac-PHSCN-NH2) or acid addition salts thereof or analogue thereof, that comprise at least one additional compound that stabilizes the peptide or analogue against spontaneous tandem dimerization or higher oligomerization. Preferred formulations include an acidic buffer such as citrate, glycine as an excipient and bulking agent. Optional additional components of the formulation are a reducing agent, a non-thiol biocompatible anti-oxidant, a lyoprotectant (typically one or more sugars, one or more amino acids, one or more methylamine, one or more lyotropic salts, and/or one or more polyols. Also provided is an article of manufacture or kit comprising the formulation in solution or in lyophilized form. A method of inhibiting angiogenesis in a subject, comprising administering to the subject the peptide in the above formulation is also disclosed.
摘要翻译：本文描述了含有Cys的抗血管生成肽Pro-His-Ser-Cys-Asn（优选以其作为Ac-PHSCN-NH 2的封端形式）或其酸加成盐或其类似物的组合物/制剂，其至少包含一种额外的化合物，其稳定肽或类似物以抵抗自发串联二聚化或更高级寡聚化。优选的制剂包括酸性缓冲剂如柠檬酸盐，作为赋形剂的甘氨酸和填充剂。制剂的任选的另外的组分是还原剂，非硫醇生物相容性抗氧化剂，冻干保护剂（通常一种或多种糖，一种或多种氨基酸，一种或多种甲胺，一种或多种溶致盐，和/或一种还提供了一种制剂或试剂盒，其包含溶液或冻干形式的制剂。一种抑制受试者血管生成的方法，包括对受试者施用上述制剂中的肽。

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