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1. 发明申请

WO2010057455A3 EDGE-EMITTING SEMICONDUCTOR LASER CHIP 审中-公开
标题翻译：激光器芯片的边缘发射半导体
公开(公告)号：WO2010057455A3
公开(公告)日：2010-12-23
申请号：PCT/DE2009001482
申请日：2009-10-21
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LAUER CHRISTIAN , KOENIG HARALD , REILL WOLFGANG , STRAUSS UWE
发明人： LAUER CHRISTIAN , KOENIG HARALD , REILL WOLFGANG , STRAUSS UWE
IPC分类号： H01S5/22 , H01S5/042 , H01S5/10
CPC分类号： H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要： The invention relates to an edge-emitting semiconductor laser chip (1), comprising - a semiconductor body (100), which comprises at least one active zone (14) in which electromagnetic radiation (10) is generated during operation of the semiconductor laser chip (1), - at least one contact strip (2), which is arranged on a cover surface (1a) on a top of the semiconductor body (100), and - at least two delimiting structures (4) for delimiting the current spreading between the contact strip (2) and the active zone (14), wherein - the delimiting structures (4) are arranged on both sides of the contact strip (2).
摘要翻译：所述边发射半导体激光器芯片（1），包括： - 一个半导体主体（100）包括，其中在半导体激光芯片的操作（1）的辐射被产生（10）的至少一个有源区（14），电磁， - 设置在至少一个接触片（2）顶面（1a）中被设置在半导体主体（100）的上表面上，和 - 至少两个限制结构（4），用于限制电流的接触带（2）和有源区（14），其中间铺展 - 限制结构（4）的两侧设置在接触带（2）。

2. 发明申请

WO2011141421A3 EDGE-EMITTING SEMICONDUCTOR LASER 审中-公开
标题翻译：边发射半导体激光器
公开(公告)号：WO2011141421A3
公开(公告)日：2012-06-28
申请号：PCT/EP2011057415
申请日：2011-05-09
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , KOENIG HARALD , STRAUSS UWE , REILL WOLFGANG
发明人： KOENIG HARALD , STRAUSS UWE , REILL WOLFGANG
IPC分类号： H01S5/042 , H01S5/0625 , H01S5/40
CPC分类号： H01S5/30 , H01L33/005 , H01L2924/0002 , H01S5/0201 , H01S5/0283 , H01S5/0425 , H01S5/0625 , H01S5/16 , H01S5/2036 , H01S5/22 , H01S5/4031 , H01L2924/00
摘要： An edge-emitting semiconductor laser (1001) is specified, having: - a semiconductor body (1) which comprises an active zone (5) suitable for producing electromagnetic radiation; - at least two facets (7) on the active zone (5), which form a resonator (55); - at least two contact points (2) which are spaced apart from one another in a lateral direction (100) by at least one intermediate region (22) and which are mounted on an outer face (11) of the semiconductor body (1).
摘要翻译：提供了一种边发射半导体激光器（1001），包括： - 半导体主体（1），包括适合于产生电磁辐射活性区中的装置（5）; - 至少两个刻面（7）〜（5）形成的谐振器（55）的有源区; - 在横向方向（100）通过至少一个中间部分彼此连接的至少两个（22）间隔开的接触点（2）设置在所述半导体主体（1）的外表面（11）。

3. 发明申请

WO2009082999A3 EDGE-EMITTING SEMICONDUCTOR LASER CHIP HAVING A STRUCTURED CONTACT STRIP 审中-公开
标题翻译：边缘发射半导体激光器芯片具有结构化STRIP
公开(公告)号：WO2009082999A3
公开(公告)日：2009-12-03
申请号：PCT/DE2008002131
申请日：2008-12-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , KOENIG HARALD , LAUER CHRISTIAN , BRICK PETER , SCHMID WOLFGANG , FEHSE ROBIN , STRAUSS UWE
发明人： KOENIG HARALD , LAUER CHRISTIAN , BRICK PETER , SCHMID WOLFGANG , FEHSE ROBIN , STRAUSS UWE
IPC分类号： H01S5/042 , H01S5/16 , H01S5/20 , H01S5/40
CPC分类号： H01S5/0425 , H01S5/0421 , H01S5/1053 , H01S5/16 , H01S5/162 , H01S5/2036 , H01S5/3095 , H01S5/4031 , H01S2301/206
摘要： The invention specifies an edge-emitting semiconductor laser chip having - an active zone (14) in which electromagnetic radiation is produced during operation of the semiconductor laser chip (1) and - at least one structured contact strip (2) which is structured in such a manner that charge carrier injection into the active zone (14) decreases towards a side of the semiconductor laser chip (1) on which a coupling-out facet (3) of the semiconductor laser chip (1) is situated.
摘要翻译：提供了一种边发射的半导体激光器芯片，其具有 - 一个有源区（14），其中，所述半导体激光器芯片的操作过程中产生的（1）电磁辐射，和 - 至少一个图案化的接触带（2），其被构造为使得载流子注入到有源区（14），以在半导体激光器芯片（1）的一个侧减小朝在其中输出小面（3）的半导体激光器芯片（1）。

4. 发明申请

WO2009080011A2 LASER LIGHT SOURCE 审中-公开
标题翻译：激光光源
公开(公告)号：WO2009080011A2
公开(公告)日：2009-07-02
申请号：PCT/DE2008002123
申请日：2008-12-16
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , REILL WOLFGANG , TAUTZ SOENKE , BRICK PETER , STRAUSS UWE
发明人： REILL WOLFGANG , TAUTZ SOENKE , BRICK PETER , STRAUSS UWE
IPC分类号： H01S5/10 , H01S5/22 , H01S5/40
CPC分类号： H01S5/22 , H01S5/1017 , H01S5/1064 , H01S5/4031
摘要： A laser light source especially comprises a semiconductor layer sequence (10) having an active layer with at least two active zones (45) that are adapted to emit, when operating, electromagnetic radiation via a lateral face of the semiconductor layer sequence (10) along a direction of emission (90), said lateral face being designed as a radiation output surface (12). The laser light source further comprises an electrical contact surface (30) above every of the at least two active zones (45) on a main surface (14) of the semiconductor layer sequence (10) and a surface structure in the main surface (14) of the semiconductor layer sequence (10). The at least two active zones (45) are arranged in the active layer (40) at a right angle to the direction of emission (90) and interspaced from each other. Every electrical contact surface (30) has a first section (31) and a second section (32) which grows wider along the direction of emission (90) towards the radiation output surface (12). The surface structure between the at least two electrical contact surfaces (30) has at least one first recess (6) along the direction of emission (90) and second recesses (7), every first section (31) of the electrical contact surfaces (30) being arranged between at least two second recesses (7).
摘要翻译：特别是激光光源包括与具有至少两个活性区域（45），其能够在所述操作电磁辐射通过一个运行的沿放射方向的半导体层序列（10）的辐射输出（12）侧表面的有源层的半导体层序列（10）（90）辐射，每一个电接触表面（30）在每个所述至少两个有源区（45）上的半导体层序列（10）和在该半导体层序列（10）的主表面（14）的表面结构的一个主表面（14），其中所述至少两种活性区域（45）横向于所述活性层（40）彼此间隔开的辐射（90）的方向布置，每个所述电接触表面（30）的第一部分（31）和具有沿辐射方向延伸的第二部分（32）（90）朝着辐射输出表面（12）朝着增加的宽度d移动他所述至少两个电接触表面之间的表面结构（30）至少一个第一凹槽（6）沿辐射（90），第二凹部的方向和（7），并在至少两个第二之间分别电接触区（30）的所述第一子区域（31）井（7）被安排。

5. 发明申请

WO2009036730A2 OPTO-ELECTRONIC SEMICONDUCTOR CHIP HAVING QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有量子头结构的光电子半导体芯片
公开(公告)号：WO2009036730A2
公开(公告)日：2009-03-26
申请号：PCT/DE2008001445
申请日：2008-08-29
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , SCHILLGALIES MARC , RUMBOLZ CHRISTIAN , EICHLER CHRISTOPH , LELL ALFRED , AVRAMESCU ADRIAN STEFAN , BRUEDERL GEORG , STRAUSS UWE
发明人： SCHILLGALIES MARC , RUMBOLZ CHRISTIAN , EICHLER CHRISTOPH , LELL ALFRED , AVRAMESCU ADRIAN STEFAN , BRUEDERL GEORG , STRAUSS UWE
IPC分类号： H01S5/343 , H01L33/06
CPC分类号： H01L33/06 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor chip, which has a radiation-emitting semiconductor layer sequence (1) with an active zone (120). The active zone comprises a first quantum well layer (3), a second quantum well layer (4), and two end barrier layers (51). The first quantum well layer and the second quantum well layer are disposed between the two end barrier layers. The active zone has a semiconductor material, which comprises at least one first and a second component. The fraction of the first component in the semiconductor material of the two end barrier layers is lower than in the first and second quantum well layers. Compared to the first quantum well layer, the second quantum well layer has either a lower layer thickness and a larger fraction of the first component of the semiconductor material, or a higher or the same layer thickness and a lower fraction of the first component of the semiconductor material.
摘要翻译：公开了一种光电子半导体芯片，其具有带有有源区（120）的发射辐射的半导体层序列（1）。有源区包括第一量子阱层（3），第二量子阱层（4）和两个终止势垒层（51）。第一量子阱层和第二量子阱层设置在两个终止势垒层之间。有源区包括含有至少第一和第二组分的半导体材料。两个终止势垒层的半导体材料中第一组分的比例低于第一和第二量子阱层中的比例。与第一量子阱层相比，第二量子阱层具有较小的层厚度和较大比例的半导体材料的第一组分或者较大或相同的层厚度以及较小比例的半导体材料的第一组分。

6. 发明申请

WO2007121735A3 COMPOSITE SUBSTRATE, AND METHOD FOR THE PRODUCTION OF A COMPOSITE SUBSTRATE 审中-公开
标题翻译：复合基板及其制造方法的复合基板
公开(公告)号：WO2007121735A3
公开(公告)日：2008-03-13
申请号：PCT/DE2007000725
申请日：2007-04-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , STRAUSS UWE , BRUEDERL GEORG , EICHLER CHRISTOPH , AVRAMESCU ADRIAN
发明人： HAERLE VOLKER , STRAUSS UWE , BRUEDERL GEORG , EICHLER CHRISTOPH , AVRAMESCU ADRIAN
IPC分类号： H01L21/20 , H01L21/762 , H01L31/00 , H01L33/00
CPC分类号： H01L31/184 , H01L21/76254 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y02E10/544
摘要： Disclosed is a composite substrate (1) comprising a substrate member (2) and a wear layer (31) that is attached to the substrate member (2). A planarizing layer (4) is disposed between the wear layer (31) and the substrate member (2). Also disclosed is a method for producing a composite substrate (1), in which a planarizing layer (4) is applied to a previously provided wear substrate (3). The wear substrate (3) is attached to a substrate member (2) for the composite substrate (1). The wear substrate (3) is then separated such that a wear layer (31) of the wear substrate (3) for the composite substrate (1) remains on the substrate member (2).
摘要翻译：本发明提供一种复合衬底（1），具有基板主体（2）和一个在基板主体（2）固定到穿层（31），其中，所述耐磨层（31）和所述基板主体（2）之间被布置在平坦化层上（4）。此外，在其中设置（3）提供的平坦化层（4）施加一个有用的基片上制造的复合基板（1）的方法。有用的基片（3）被用于复合基板安装在基板主体（2）（1）。随后，将有用的衬底（3）分离出，其中，对于所述基板主体上的复合衬底（1）有用的衬底（3）的耐磨层（31）保持（2）。

7. 发明申请

WO2009121315A2 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：半导体部件和方法的半导体元件
公开(公告)号：WO2009121315A2
公开(公告)日：2009-10-08
申请号：PCT/DE2009000334
申请日：2009-03-09
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , STRAUSS UWE
发明人： EICHLER CHRISTOPH , STRAUSS UWE
IPC分类号： H01S5/22
CPC分类号： H01L22/10 , H01L22/12 , H01S5/22 , H01S2301/173
摘要： The invention relates to a semiconductor component with a semiconductor body (2) having a semiconductor layer sequence which has an active region (21) for the generation of coherent radiation and an indicator layer (3). On the side facing away from the active region of an interface (30) that delimits some sections of the semiconductor body (2) in the vertical direction, the semiconductor body (2) comprises a web-like region (4) which extends in the vertical direction between the interface (30) and a surface (40) of the semiconductor body (2). The indicator layer (3) has a material composition that differs from that of the material of the web-like region (4), which adjoins the indicator layer (3). The distance of the indicator layer (3) from the surface (40) is not greater than a distance of the interface (30) from the surface (40). The invention further relates to a method for producing a semiconductor component.
摘要翻译：提供了一种半导体器件，包括具有半导体层序列，其是一种用于产生在有源区（21）和指示层（3）的相干辐射的半导体主体（2）。从半导体主体（2）在垂直方向上的边界表面（30）部分地限定，所述半导体主体（2），以一个幅状区域（4）中的边界表面（30）之间的垂直方向上延伸和表面的有源区远程侧该半导体主体（2）的（40）。指示剂层（3）具有一个材料组合物从该指示层（3）的不同邻接幅状区域的材料（4）是不同的。从表面（40）的指示层（3）的距离至多为从表面（40）的边界表面（30）之间的距离大。此外，提供了一种制造半导体器件的方法。

8. 发明申请

WO2010105865A3 OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：光电半导体器件
公开(公告)号：WO2010105865A3
公开(公告)日：2011-01-13
申请号：PCT/EP2010050647
申请日：2010-01-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , MUELLER MARTIN , STRAUSS UWE
发明人： MUELLER MARTIN , STRAUSS UWE
IPC分类号： H01S3/0941 , H01S5/40 , H01S5/42
CPC分类号： H01S5/4031 , H01S3/094096 , H01S3/0941 , H01S5/0425 , H01S5/1053 , H01S5/3095 , H01S5/4043 , H01S5/405 , H01S5/4087 , H01S5/423
摘要： At least one embodiment of the optoelectronic semiconductor component (1) comprises an epitactically grown semiconductor body (2) having at least one active layer (3). The semiconductor body (2) of the semiconductor component (1) furthermore comprises at least one barrier layer (4), wherein the barrier layer (4) directly adjoins the active layer (3). In a variation direction or a longitudinal direction (L), perpendicular to a growth direction (G) of the semiconductor body (2), a material composition and/or a layer thickness of the active layer (3) and/or the barrier layer (4) is varied. Due to the variation of the material composition and/or the layer thickness of the active layer (3) and/or the barrier layer (4), an emission wavelength (?) of a radiation (R) generated in the active layer (3), likewise in the variation direction or in the longitudinal direction (L), is set.
摘要翻译：在外延生长的半导体本体的光电子半导体器件（1）中的至少一个实施例中（2）具有至少一个有源层（3）。此外，半导体主体（2）的半导体元件（1）的至少一个阻挡层（4），其中所述阻挡层（4）相邻的有源层（3）。沿变化的方向或长度方向（L），垂直于所述半导体主体（2），材料组合物和/或活性层（3）和/或阻挡层（4）被改变的层厚度的生长方向（G）。通过改变材料的组成和/或活性层（3）和/或阻挡层的层厚度（4）是一种发射波长（λ）的辐射所产生的在所述有源层（3）（R），也沿着变化或沿的方向纵向方向（L），被设置。

9. 发明申请

WO2010069282A3 LUMINOUS MEANS AND PROJECTOR COMPRISING AT LEAST ONE LUMINOUS MEANS OF THIS TYPE 审中-公开
标题翻译：灯和投影仪至少有一个这样的灯
公开(公告)号：WO2010069282A3
公开(公告)日：2010-11-11
申请号：PCT/DE2009001448
申请日：2009-10-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
发明人： LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
IPC分类号： H04N9/31
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 µm.
摘要翻译：在发光装置（1）的至少一个实施例中，这包括至少一个半导体激光器（2），该半导体激光器被设置为发射波长在360nm和485nm之间（包括端值）的初级辐射（P）。此外，所述发光装置（1）包括至少一个转换装置（3），半导体激光器（2）的下游，并适于至少一个初级辐射（P）的成次级辐射（S）与所述初级辐射（P）不同的一个部分，转换更大的波长。由发光装置（1）发射的辐射（R）表现出至多50μm的光学相干长度。

10. 发明申请

WO2007121739A3 OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：光电半导体器件
公开(公告)号：WO2007121739A3
公开(公告)日：2008-03-13
申请号：PCT/DE2007000740
申请日：2007-04-25
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , MILLER STEPHAN , STRAUSS UWE , HAERLE VOLKER , SABATHIL MATTHIAS
发明人： EICHLER CHRISTOPH , MILLER STEPHAN , STRAUSS UWE , HAERLE VOLKER , SABATHIL MATTHIAS
IPC分类号： H01L33/00 , H01L33/22 , H01L33/40 , H01L33/46
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Disclosed is an optoelectronic semiconductor component comprising a supporting substrate as well as an intermediate layer that provides adhesion between the supporting substrate and a component structure. The component structure encompasses an active layer that is used for generating radiation.
摘要翻译：它是一种光电子半导体器件，其包括： - 支撑基底， - 促进所述载体基板和器件结构，其中所述装置结构包括用于产生辐射，指定的有源层之间的粘附性的中间层。

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